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    • 94. 发明授权
    • Solid-state imaging device, semiconductor integrated circuit, and signal processing method
    • 固态成像装置,半导体集成电路和信号处理方法
    • US07791524B2
    • 2010-09-07
    • US12388105
    • 2009-02-18
    • Shigetaka KasugaYoshihisa KatoTakahiko MurataTakayoshi Yamada
    • Shigetaka KasugaYoshihisa KatoTakahiko MurataTakayoshi Yamada
    • H03M1/12
    • H04N5/378H04N5/3742
    • A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.
    • 固态成像装置包括:以接收光进行光电转换的矩阵状的像素电路; 以及转换所得到的光电转换信号电压的AD转换单元。 AD转换单元包括:在信号电压的可能范围内产生彼此不同的多个参考电压的参考电压产生单元; 一个最高有效位转换单元,其识别包括每个具有对应的一个参考电压的电压部分中的信号电压的电压部分作为基点,并将所识别的结果确定为数字信号的最高有效位的值 ; 以及最低有效位转换单元,其将所述信号电压和所述参考电压之间的差电压转换为所述数字信号的最低有效位作为所识别的电压部分的基点。