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91. 发明授权

US08513654B2 Compound for organic thin-film transistor and organic thin-film transistor using the compound 有权
标题翻译：用于有机薄膜晶体管的化合物和使用该化合物的有机薄膜晶体管
公开(公告)号：US08513654B2
公开(公告)日：2013-08-20
申请号：US12936945
申请日：2009-04-02
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L35/24
CPC分类号： H01L51/0052 , C07C15/56 , C07C15/60 , C07C15/62 , C07C22/08 , C07C2603/24 , C07C2603/44 , C07C2603/52 , C07D333/76 , C07D493/04 , C07D495/04 , C07D495/14 , C07D513/04 , H01L51/0541 , H01L51/0545
摘要： A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2 (1) wherein L is —C≡C—, or —CH═CH— in a trans configuration, X1 and X2 are independently an alkyl group having 2 to 30 carbon atoms or a haloalkyl group having 1 to 30 carbon atoms, and Ar is a substituted or unsubstituted aromatic hydrocarbon group having 14 to 60 ring carbon atoms which is a condensed ring of three or more rings, or a substituted or unsubstituted aromatic heterocyclic group having 11 to 60 ring atoms which is a condensed ring of three or more rings.
摘要翻译：一种具有下式（1）所示结构的有机薄膜晶体管的化合物：其中L为-C = C-的-X 1 -L-Ar-L-X2（1）或-CH = CH- 构型，X1和X2独立地为碳原子数为2〜30的烷基或碳原子数为1〜30的卤代烷基，Ar为取代或未取代的环碳原子数为14〜60的芳香族烃基，三个以上环，或取代或未取代的环状原子数为11〜60的芳香族杂环基，是3个以上环的稠环。

92. 发明申请

US20130102568A1 ALKOXYIMINO DERIVATIVE AND PEST CONTROL AGENT 有权
标题翻译： ALKOXYIMINO衍生物和病虫害控制剂
公开(公告)号：US20130102568A1
公开(公告)日：2013-04-25
申请号：US13806317
申请日：2011-06-21
申请人： Shunichirou Fukumoto , Daisuke Shikama , Keiji Toriyabe , Toshihiro Nagata , Masaaki Komatsu , Takeshi Matsuda , Yuki Nakano
发明人： Shunichirou Fukumoto , Daisuke Shikama , Keiji Toriyabe , Toshihiro Nagata , Masaaki Komatsu , Takeshi Matsuda , Yuki Nakano
IPC分类号： A01N55/00 , A01N43/653 , C07D413/06 , A01N43/82 , A01N43/84 , C07F7/10 , C07D417/06 , A01N43/78 , C07D403/12 , C07D413/12 , C07D249/10 , C07D401/12
CPC分类号： A01N55/00 , A01N37/50 , A01N43/08 , A01N43/10 , A01N43/20 , A01N43/40 , A01N43/50 , A01N43/56 , A01N43/653 , A01N43/713 , A01N43/78 , A01N43/82 , A01N43/84 , A01N47/18 , C07C259/02 , C07D249/10 , C07D401/12 , C07D403/06 , C07D403/12 , C07D405/12 , C07D413/06 , C07D413/12 , C07D417/06 , C07D417/12 , C07F7/0812 , C07F7/10
摘要： [PROBLEMS] The present invention provides a novel alkoxyimino derivative or a salt thereof, as well as to a pest control agent containing the derivative or salt thereof as an active ingredient, which shows an excellent pest control effect on a wide range of pests in the agricultural and horticultural field and is also capable of controlling resistant pests.[MEANS FOR SOLVING PROBLEMS] The novel alkoxyimino derivative is characterized by being represented by general formula [I] (in the formula, X, R1, R2 and Q are as defined in the specification) and the post control agent is characterized by containing as an active ingredient the alkoxyimino derivative or a salt thereof.
摘要翻译：本发明提供一种新的烷氧基亚氨基衍生物或其盐，以及含有其衍生物或其盐作为活性成分的害虫防治剂，其对于广泛的害虫防治效果显示出优异的害虫防治效果农业和园艺领域，也能够控制抗病虫害。 [解决问题的手段]新型烷氧基亚氨基衍生物的特征在于通式[I]（式中，X，R 1，R 2，Q如说明书中所定义），后处理剂的特征在于含有烷氧基亚氨基衍生物或其盐的活性成分。

93. 发明申请

US20120231646A1 CONNECTOR 有权
标题翻译：连接器
公开(公告)号：US20120231646A1
公开(公告)日：2012-09-13
申请号：US13354157
申请日：2012-01-19
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01R4/48
CPC分类号： H01R12/78 , H01R12/79 , H01R12/88 , H01R13/62933
摘要： It is the object of the present invention to provide a connector 10 which provides a stable connection that is resistant to the rocking motion of a connecting object in insertion direction, longitudinal pitch direction, or the direction of the thickness of the connector, while maintaining the low-profile level so as to prevent the deflection of the connecting object even when the connector is mounted on a flexible board e.g., an FPC.
摘要翻译：本发明的目的是提供一种连接器10，该连接器10提供稳定的连接，其能够抵抗连接对象在插入方向，纵向节距方向或连接器的厚度方向上的摆动运动，同时保持即使当连接器安装在诸如FPC的柔性板上时也防止连接对象的偏转。

94. 发明申请

US20120223338A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120223338A1
公开(公告)日：2012-09-06
申请号：US13394549
申请日：2010-09-02
申请人： Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
发明人： Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
IPC分类号： H01L29/78 , H01L21/316
CPC分类号： H01L29/7827 , H01L21/02164 , H01L21/02178 , H01L21/0223 , H01L21/02236 , H01L21/02247 , H01L21/02252 , H01L21/02255 , H01L21/0445 , H01L21/049 , H01L21/8213 , H01L29/0847 , H01L29/086 , H01L29/0869 , H01L29/1087 , H01L29/1608 , H01L29/41766 , H01L29/42356 , H01L29/4236 , H01L29/42368 , H01L29/45 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66068 , H01L29/78 , H01L29/7802 , H01L29/7813
摘要： A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在碳化硅衬底上形成氧化硅膜，在含有氢的气体中退火碳化硅衬底和氧化硅膜，并在氧化硅膜上形成氧氮化硅膜碳化硅衬底和氧化硅膜的退火。

95. 发明授权

US08217389B2 Organic thin film transistor device and organic thin film light-emitting transistor 有权
标题翻译：有机薄膜晶体管器件和有机薄膜发光晶体管
公开(公告)号：US08217389B2
公开(公告)日：2012-07-10
申请号：US12445146
申请日：2007-10-10
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
IPC分类号： H01L35/24
CPC分类号： H01L51/005 , C09B1/00 , C09B3/78 , C09B57/00 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , C09K2211/1051 , C09K2211/1092 , H01L51/0022 , H01L51/0052 , H01L51/0058 , H01L51/0074 , H01L51/0512 , H01L51/0541 , H01L51/0545 , H01L51/102 , H01L51/52 , H01L51/5203 , H01L51/5296 , H05B33/14
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound having a specified structure; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed (driving speed) and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对栅电极施加的电压，其中所述有机半导体层包括具有特定结构的化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度（驱动速度）变高并且具有大的ON / OFF比。

96. 发明授权

US08207525B2 Organic thin film transistor and organic thin film light emitting transistor 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US08207525B2
公开(公告)日：2012-06-26
申请号：US12517462
申请日：2007-11-28
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L29/08
CPC分类号： H01L51/0094 , H01L51/0022 , H01L51/005 , H01L51/0058 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105 , H01L51/5012 , H01L51/52 , H01L51/5203 , H01L51/5296
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

97. 发明授权

US08022401B2 Organic thin film transistor and organic thin film light-emitting transistor 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US08022401B2
公开(公告)日：2011-09-20
申请号：US12514866
申请日：2007-11-13
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/00 , H01L51/50 , H01L27/32
CPC分类号： H01L51/5296 , H01L51/0022 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0058 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having a divalent aromatic hydrocarbon group having a phenanthrene structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中所述有机半导体层包含其中心具有菲结构的二价芳族烃基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

98. 发明申请

US20110220883A1 COMPOUND FOR ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 有权
标题翻译：有机薄膜晶体管及其有机薄膜晶体管的化合物
公开(公告)号：US20110220883A1
公开(公告)日：2011-09-15
申请号：US13057820
申请日：2009-08-05
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
IPC分类号： H01L51/52 , H01L51/10 , C07C13/62 , C07C43/20 , C07C321/26 , C07C317/14 , C07C211/50 , C07D207/04 , C07C25/13 , C07C22/04 , C07C255/52
CPC分类号： C07C15/20 , C07C43/2055 , C07C2603/52 , H01L51/0055 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A compound for an organic thin film transistor having a structure of the following formula (1): wherein R1 to R6 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms (the alkyl groups may be combined with each other to form a ring structure containing the nitrogen atom), an alkylsulfonyl group having 1 to 30 carbon atoms, a haloalkylsulfonyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent, provided that the compound in which all of R1 to R6 are a hydrogen atom is excluded.
摘要翻译：一种具有下式（1）结构的有机薄膜晶体管的化合物：其中R 1至R 6独立地为氢原子，卤素原子，具有1至30个碳原子的烷基，具有1至30个碳原子的卤代烷基碳原子，碳原子数1〜30的烷氧基，碳原子数1〜30的卤代烷氧基，碳原子数1〜30的烷硫基，碳原子数1〜30的卤代烷硫基，碳原子数为1〜30的烷基氨基碳原子，碳原子数2〜60的二烷基氨基（烷基可以相互结合形成含有氮原子的环结构），碳原子数1〜30的烷基磺酰基，碳原子数1〜30的卤代烷基磺酰基碳原子数为6〜60的芳香族烃基，碳原子数3〜60的芳香族杂环基，碳原子数3〜20的烷基甲硅烷基，碳原子数5〜60的烷基甲硅烷基乙炔基或氰基，其各自可以具有取代基，条件是其中R1至R6全部为氢原子的化合物被排除。

99. 发明申请

US20110068353A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110068353A1
公开(公告)日：2011-03-24
申请号：US12993209
申请日：2009-05-20
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/24
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/45 , H01L29/66068 , H01L29/7397
摘要： A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a gate electrode (41), and an n-type semiconductor region (14). The p-type semiconductor layer (13) includes a channel region that is along the trench (3) and in contact with the second n-type semiconductor layer (12) and the n-type semiconductor region (14). The size of the channel region in the depth direction x is 0.1 to 0.5 μm. The channel region includes a high-concentration region where the peak impurity concentration is approximately 1×1018 cm−3. The semiconductor device A1 thus configured allows achieving desirable values of on-resistance, dielectric withstand voltage and threshold voltage.
摘要翻译：半导体器件（A1）包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13），沟槽（3），绝缘层（5）），栅电极（41）和n型半导体区域（14）。 p型半导体层（13）包括沿着沟槽（3）并与第二n型半导体层（12）和n型半导体区域（14）接触的沟道区域。沟道区域的深度方向x的大小为0.1〜0.5μm。沟道区域包括峰值杂质浓度约为1×1018cm-3的高浓度区域。如此构造的半导体器件A1允许实现导通电阻，介电耐受电压和阈值电压的期望值。

100. 发明申请

US20110031487A1 COMPOUND FOR ORGANIC THIN-FILM TRANSISTOR AND ORGANIC THIN-FILM TRANSISTOR USING THE COMPOUND 有权
标题翻译：有机薄膜晶体管和有机薄膜晶体管的化合物
公开(公告)号：US20110031487A1
公开(公告)日：2011-02-10
申请号：US12936838
申请日：2009-04-02
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/10 , C07D213/06 , C07D277/20 , C07D307/02 , C07D333/08 , C07D495/22 , C07D495/14 , C07D495/04 , C07D401/10 , C07D407/10 , C07D409/10
CPC分类号： H01L51/0052 , H01L51/0074 , H01L51/0558
摘要： A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2 (1) wherein L is —C≡C—, or —CH═CH— in a trans configuration, X1 and X2 are independently a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and their bonding positions to L are in heterocycles, Ar is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 ring carbon atoms, or a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and at least one of X1, X2 and Ar is a bi- or higher-fused ring.
摘要翻译：一种具有下式（1）所示结构的有机薄膜晶体管的化合物：其中L为-C≡C-的X1-L-Ar-L-X2（1）或反式 X1和X2独立地为取代或未取代的环原子数为5〜60的芳香族杂环基，它们与L的键合位置为杂环，Ar为取代或未取代的碳原子数为6〜60的芳香族烃基，或取代或未取代的环原子数为5〜60的芳香族杂环基，X 1，X 2，Ar中的至少1个为双或更高稠环。

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