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91. 发明授权

US06383555B1 Misted precursor deposition apparatus and method with improved mist and mist flow 有权
标题翻译：雾化前体沉积装置和方法具有改善的雾气流
公开(公告)号：US06383555B1
公开(公告)日：2002-05-07
申请号：US09615373
申请日：2000-07-13
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D512
CPC分类号： H01L21/31691 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C8/10 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/1291 , C23C18/14 , C23C26/02 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/314 , H05K3/105 , Y10S427/101
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
摘要翻译：衬底位于沉积室内，衬底限定衬底平面。液体前体被超声波或文氏管装置迷雾，产生胶体雾。产生雾，允许沉淀在缓冲室中，通过高达0.01微米的系统过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。

92. 发明授权

US06326315B1 Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same 有权
标题翻译：用于制造分层超晶格材料的低温快速斜面退火方法，并制造包括它们的电子器件
公开(公告)号：US06326315B1
公开(公告)日：2001-12-04
申请号：US09523919
申请日：2000-03-09
申请人： Kiyoshi Uchiyama , Koji Arita , Narayan Solayappan , Carlos A. Paz de Araujo
发明人： Kiyoshi Uchiyama , Koji Arita , Narayan Solayappan , Carlos A. Paz de Araujo
IPC分类号： H01L2131
CPC分类号： H01L21/28291 , C30B7/00 , C30B7/005 , C30B29/68
摘要： A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid ramping anneal (“RRA”) technique with a ramping rate of 50° C./second at a hold temperature of 650° C. for a holding time of 30 minutes.
摘要翻译：用于形成层状超晶格材料的液体前体被施加到集成电路基板。使用快速斜面退火（“RRA”）技术将前体涂层在氧气中退火，在650℃的保持温度下以50℃/秒的升高速率保持30分钟的保持时间。

93. 发明授权

US06225156B1 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 失效
标题翻译：对氢曝露具有低灵敏度的铁电集成电路及其制造方法
公开(公告)号：US06225156B1
公开(公告)日：2001-05-01
申请号：US09062264
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/75
摘要： A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.
摘要翻译：在集成电路中的铁电薄膜的上方形成氢阻挡层。氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。铁电薄膜优选包含层状超晶格化合物。添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

94. 发明授权

US06198225B1 Ferroelectric flat panel displays 失效
标题翻译：铁电平板显示屏
公开(公告)号：US06198225B1
公开(公告)日：2001-03-06
申请号：US09326838
申请日：1999-06-07
申请人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： G09G310
CPC分类号： G09G3/367 , G09G3/22 , H01J1/30 , H01J2201/306 , H01J2329/00
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.
摘要翻译：平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。铁电薄膜中的功能梯度增强了电子发射。可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。荧光体可以夹在电介质和铁电体之间以增强发射。

95. 发明授权

US6165802A Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation 失效
标题翻译：使用氧气制造铁电集成电路来抑制和修复氢气降解的方法
公开(公告)号：US6165802A
公开(公告)日：2000-12-26
申请号：US62258
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L21/8247 , H01L21/30 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/00
CPC分类号： H01L27/11502 , H01L21/3003 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55
摘要： An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300.degree. to 1000.degree. C. for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the metal oxide element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.
摘要翻译：形成集成电路，其包含含有至少两种金属的金属氧化物材料的铁电体元件。在环境氧气中，在300〜1000℃的温度范围内进行氧回收退火20分钟〜2小时。氧回收退火反转氢降解的作用并恢复铁电性能。随着退火温度和退火时间的增加，氧气回收退火更有效。优选地，金属氧化物元件包括层状超晶格化合物。当层状超晶格化合物包含铌酸铋铋并且前体中的铌/钽摩尔比为约0.4时，铁电性能的氢降解最小化。当层状超晶格化合物的超晶格发生元件和B位元素中的至少一个存在超过由化合物的平衡化学计量式表示的量时，进一步降低氢降解。

96. 发明授权

US6110531A Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制备集成电路薄膜的方法和装置
公开(公告)号：US6110531A
公开(公告)日：2000-08-29
申请号：US892485
申请日：1997-07-14
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： B05D1/00 , B05D1/04 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C16/56 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , C30B25/02 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , C23C16/18 , H01L21/31
CPC分类号： C23C16/45565 , B05D1/00 , B05D1/007 , B05D1/04 , B05D1/60 , B05D3/0493 , C23C16/0218 , C23C16/40 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C16/56 , C23C26/02 , C23C4/123 , C30B25/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/02197 , H01L21/02274 , H01L21/02356 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1871 , H01L41/316 , H01L28/55 , H05K3/105
摘要： A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.
摘要翻译：由文氏管产生的气雾包含化学气相沉积中使用的化合物的液体前体，在载气中通过管道在环境温度下运输，并通入加热区，雾化气滴在100℃至200℃的温度下气化 ℃，其低于前体化合物的分解温度。将气化液体通过入口组件注入到沉积反应器中，其中存在加热至400℃至600℃的基底，气化的化合物在其上分解并形成层状超晶格化合物的薄膜。

97. 发明授权

US6051858A Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
标题翻译：铁电/高介电常数集成电路及其制造方法
公开(公告)号：US6051858A
公开(公告)日：2000-04-18
申请号：US892699
申请日：1997-07-15
申请人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11502 , H01L28/55
摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.
摘要翻译：硅衬底上的晶体管被绝缘层覆盖。导电插塞通过绝缘层到晶体管漏极。直接覆盖插头和漏极的铁电电容器的底部电极接触插头。铁电层是自我构图的，并且完全覆盖在存储单元上。自图案牺牲层完全覆盖铁电层。电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

98. 发明授权

US05997642A Method and apparatus for misted deposition of integrated circuit quality thin films 失效
标题翻译：沉积集成电路质量薄膜的方法和装置
公开(公告)号：US05997642A
公开(公告)日：1999-12-07
申请号：US971799
申请日：1997-11-17
申请人： Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D1/04 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , C23C14/00
CPC分类号： C23C16/45565 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C18/12 , H01L21/31691 , H01L28/55
摘要： A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.
摘要翻译：质量流量控制器控制前体到雾发生器的输送。使用文丘里管雾化前体，其中氧气和氮气的组合由电晕丝充电并且通过前体填充的喉部。雾被电过滤，使得其主要包含负离子，进入减速室，然后通过入口板中的入口板的入口端口流入沉积室，该入口板是室之间的分隔件和接地电极。入口板位于要沉积雾的基底的平面上方并且基本上平行。基板被充电至约5000伏特的电压。在基板正上方的入口板的39平方英寸进口端口区域中每平方英寸有440个入口端口。入口面积大致等于衬底面积。排气口围绕平行于和低于衬底平面的排气平面的周边限定通道。

99. 发明授权

US5965219A Misted deposition method with applied UV radiation 失效
标题翻译：应用紫外线辐射沉积法
公开(公告)号：US5965219A
公开(公告)日：1999-10-12
申请号：US591341
申请日：1996-01-25
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , C23C8/00
CPC分类号： C23C18/1216 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/14 , C23C26/02 , C23C8/10 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a substrate while UV radiation is applied to the mist. The film of liquid on the substrate is dried and annealed on the substrate while the UV radiation is applied to form a solid thin film of a metal oxide. The thin film is then incorporated into an electronic device of an integrated circuit fabricated on the substrate. The application of UV radiation to both the mist during deposition and the thin film after deposition significantly increases the quality of the resulting integrated circuits. The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.
摘要翻译：将UV辐射施加到沉积室中的基底以从其中解吸水和其它污染物。液体前体被雾化，流入沉积室并沉积在基底上，同时将紫外线辐射施加于雾。将衬底上的液体膜干燥并在衬底上退火，同时施加UV辐射以形成金属氧化物的固体薄膜。然后将薄膜并入到在衬底上制造的集成电路的电子器件中。在沉积期间将UV辐射施加到雾和沉积后的薄膜显着增加了所得到的集成电路的质量。已经发现该方法对于制备BST，钽酸锶锶和铌酸铋锶特别优异。

100. 发明授权

US5883828A Low imprint ferroelectric material for long retention memory and method of making the same 失效
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US5883828A
公开(公告)日：1999-03-16
申请号：US19849
申请日：1998-02-06
申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
摘要翻译：用于诸如FERAMS等的集成记忆电路中的薄膜铁电材料包含具有经验式SrBi2 + E（NbXTa2-X）O9 + 3E / 2的钽酸钽铋铌酸盐，其中E是表示过量的数的铋范围从零到2; X表示0.01〜0.9的过量的铌。当用单向电压脉冲进行挑战时，薄膜表现出极好的耐极化压印特性。

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