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91. 发明授权

US07879734B2 Method of manufacturing porous body 有权
标题翻译：制造多孔体的方法
公开(公告)号：US07879734B2
公开(公告)日：2011-02-01
申请号：US11409021
申请日：2006-04-24
申请人： Kazuhiko Fukutani , Tohru Den
发明人： Kazuhiko Fukutani , Tohru Den
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B01D39/2068 , B01D67/0058 , B01D69/02 , B01D71/024 , B01D71/027 , C04B35/01 , C04B35/14 , C04B35/16 , C04B38/0025 , C04B2235/3287 , C04B2235/3418 , C04B2235/65 , C23C8/02 , C23C8/10 , C25D11/02 , C25D11/045 , G02B5/207 , G11B5/855 , H01L21/0337 , Y10S977/902 , Y10T428/12528 , Y10T428/12625 , Y10T428/12674 , Y10T428/24322 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249975 , Y10T428/249978 , Y10T428/249979 , Y10T428/249987 , C04B35/10 , C04B38/04
摘要： A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, the region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as a functional material in light emitting devices, optical devices and microdevices. It can also be used as a filter.
摘要翻译：纳米结构是包括多个柱状孔和围绕它们的区域的多孔体，所述区域是形成为含有C，Si，Ge或它们的组合材料的氧化物非晶区域。这种纳米结构可以用作发光器件，光学器件和微器件中的功能材料。它也可以用作过滤器。

92. 发明授权

US07829362B2 Field-effect transistor, sensor using it, and production method thereof 有权
标题翻译：场效应晶体管，使用它的传感器及其制造方法
公开(公告)号：US07829362B2
公开(公告)日：2010-11-09
申请号：US11945838
申请日：2007-11-27
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Yohei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Yohei Ishida , Tohru Den
IPC分类号： H01L21/336
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

93. 发明授权

US07591641B2 Mold and process of production thereof 失效
标题翻译：模具及其生产工艺
公开(公告)号：US07591641B2
公开(公告)日：2009-09-22
申请号：US11367343
申请日：2006-03-06
申请人： Tatsuya Saito , Aya Imada , Tohru Den
发明人： Tatsuya Saito , Aya Imada , Tohru Den
IPC分类号： B29C59/00 , B28B7/38
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G11B5/855
摘要： A novel mold is provided. The mold is prepared through steps of forming a concavo-convex pattern on a substrate, forming a film by embedding a material of a composition having shape-memory in the concavo-convex pattern, and forming a mold having the concavo-convex pattern by separating the film from the concavo-convex pattern after the film formation in the film formation step.
摘要翻译：提供了一种新颖的模具。通过在基板上形成凹凸图案的步骤来制备模具，通过将具有形状记忆的组合物的材料嵌入凹凸图案中形成膜，并通过分离形成具有凹凸图案的模具在成膜步骤中成膜后的凹凸图案的膜。

94. 发明申请

US20090176128A1 STRUCTURED MATERIAL, MAGNETIC RECORDING MEDIUM UTILIZING THE SAME, AND MAGNETIC RECORDING/REPRODUCING APPARATUS 有权
标题翻译：结构材料，使用其的磁记录介质和磁记录/再现装置
公开(公告)号：US20090176128A1
公开(公告)日：2009-07-09
申请号：US12401677
申请日：2009-03-11
申请人： Nobuhiro Yasui , Tohru Den
发明人： Nobuhiro Yasui , Tohru Den
IPC分类号： G11B5/127 , G11B5/66
CPC分类号： G11B5/7325 , C23C14/025 , C23C14/185 , C23C28/322 , C23C28/345 , Y10T428/11 , Y10T428/12861
摘要： The invention provides a structured material composed by including a noble metal, in which an oriented layer is formed on a layer containing a Group 4A metal. The invention enables to form an oriented layer, which has required a high temperature for formation, by a low temperature process.
摘要翻译：本发明提供一种结构材料，其包括贵金属，其中在含有4A族金属的层上形成取向层。本发明能够通过低温工艺形成需要高温成形的取向层。

95. 发明申请

US20080223824A1 COLUMNAR STRUCTURED MATERIAL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：柱结构材料及其制造方法
公开(公告)号：US20080223824A1
公开(公告)日：2008-09-18
申请号：US12119739
申请日：2008-05-13
申请人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
发明人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
IPC分类号： B44C1/22 , B05D5/00 , C25D5/00 , C23C14/00
CPC分类号： C23C14/5873 , B82Y10/00 , B82Y30/00 , C23C14/165 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/32051 , H01L29/0657
摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. In addition, a material is introduced into the columnar hole portions of the porous material to form a dot pattern, and the porous material is removed.
摘要翻译：制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其中结构材料由将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。此外，将材料引入到多孔材料的柱状孔部分中以形成点图案，并且去除多孔材料。

96. 发明授权

US07387967B2 Columnar structured material and method of manufacturing the same 失效
标题翻译：柱状结构材料及其制造方法
公开(公告)号：US07387967B2
公开(公告)日：2008-06-17
申请号：US10535452
申请日：2003-12-12
申请人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
发明人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C23C14/5873 , B82Y10/00 , B82Y30/00 , C23C14/165 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/32051 , H01L29/0657
摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. Additional steps include introducing a mask material into the columnar hole of the porous material to form a dot pattern, and removing the porous material.
摘要翻译：制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其结构材料由将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。附加步骤包括将掩模材料引入到多孔材料的柱状孔中以形成点图案，并且去除多孔材料。

97. 发明申请

US20080076201A1 FIELD-EFFECT TRANSISTOR, SENSOR USING IT, AND PRODUCTION METHOD THEREOF 有权
标题翻译：现场效应晶体管，使用它的传感器及其生产方法
公开(公告)号：US20080076201A1
公开(公告)日：2008-03-27
申请号：US11945838
申请日：2007-11-27
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
IPC分类号： H01L21/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

98. 发明授权

US07303696B2 Light-emitting material and light-emitting element 失效
标题翻译：发光材料和发光元件
公开(公告)号：US07303696B2
公开(公告)日：2007-12-04
申请号：US11086422
申请日：2005-03-23
申请人： Tohru Den , Tomoyuki Oika
发明人： Tohru Den , Tomoyuki Oika
IPC分类号： C09K11/00
CPC分类号： C09K11/682 , C09K11/7708 , C09K11/7734 , C09K11/7787 , H05B33/14
摘要： A light-emitting material includes a matrix section 12 and light-emitting sections 11 dispersed and buried in the matrix section. The matrix section 12 comprises a first material and the light-emitting sections comprise a second material showing a eutectic relationship with the first material.
摘要翻译：发光材料包括分散并埋设在矩阵部分中的矩阵部分12和发光部分11。矩阵部分12包括第一材料，并且发光部分包括与第一材料显示共晶关系的第二材料。

99. 发明授权

US07282268B2 Structure, method of manufacturing the same, and device using the same 有权
标题翻译：结构，制造方法及使用其的装置
公开(公告)号：US07282268B2
公开(公告)日：2007-10-16
申请号：US10912206
申请日：2004-08-06
申请人： Kazuhiko Fukutani , Tohru Den
发明人： Kazuhiko Fukutani , Tohru Den
IPC分类号： B32B9/06
CPC分类号： H01L29/0665 , B82Y10/00 , C30B23/00 , C30B29/60 , G11C2216/08 , H01L29/0673 , H01L29/0676 , H01L29/12 , H01L29/7613 , H01L49/006 , Y10T428/24917
摘要： A composite structure is formed so as to contain aluminum and silicon or silicon/germanium. The composite structure comprises pillar-shaped members containing aluminum and a region containing silicon or silicon/germanium and surrounding the pillar-shaped members. The structure contains silicon or silicon/germanium at a content not less than 20 atomic % and not more than 70 atomic % relative to the total amount aluminum and silicon or silicon/germanium.
摘要翻译：形成复合结构以便包含铝和硅或硅/锗。该复合结构包括含有铝的柱状构件和含有硅或硅/锗的区域并围绕柱状构件。该结构含有相对于铝和硅或硅/锗总量不少于20原子％且不大于70原子％的硅或硅/锗。

100. 发明授权

US07167342B2 Magnetic recording medium, magnetic recording playback device, and information processing device 失效
标题翻译：磁记录介质，磁记录重放装置和信息处理装置
公开(公告)号：US07167342B2
公开(公告)日：2007-01-23
申请号：US10813004
申请日：2004-03-31
申请人： Nobuhiro Yasui , Tohru Den
发明人： Nobuhiro Yasui , Tohru Den
IPC分类号： G11B5/82 , G11B5/66
CPC分类号： G11B5/65 , G11B5/012 , G11B5/64
摘要： A magnetic recording medium is provided while including a recording layer in which magnetic materials are in the shape of a circular cylinder and uniformity and size reduction are achieved simultaneously. The magnetic recording medium includes a recording layer and an electrode layer disposed on a substrate, wherein the recording layer and the electrode layer are disposed in the same plane. The above-described electrode layer is disposed adjacently to the end portion of the plane in which the recording layer on the substrate is disposed. A matrix surrounding magnetic material portions of the above-described recording layer contains alumina as a constituent provided by anodization of aluminum. Alternatively, the matrix surrounding the magnetic material portions of the above-described recording layer contains at least one of Si and Ge or an oxide thereof as a constituent.
摘要翻译：提供磁记录介质，同时包括其中磁性材料为圆柱形形状的记录层，同时实现均匀性和尺寸减小。磁记录介质包括记录层和设置在基板上的电极层，其中记录层和电极层设置在同一平面内。上述电极层设置在与设置有基板上的记录层的平面的端部相邻的位置。围绕上述记录层的磁性材料部分的基体包含氧化铝作为通过阳极氧化提供的组分。或者，围绕上述记录层的磁性材料部分的基质包含Si和Ge中的至少一种或其氧化物作为组分。

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