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91. 发明申请

US20080211408A1 Plasma Display Panel and Method for Manufacturing Same 审中-公开
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20080211408A1
公开(公告)日：2008-09-04
申请号：US11572902
申请日：2005-08-11
申请人： Hiroyuki Yamakita , Masatoshi Kitagawa , Mikihiko Nishitani , Noriyasu Echigo , Tomohiro Okumura , Hiroaki Ishio , Hikaru Nishitani
发明人： Hiroyuki Yamakita , Masatoshi Kitagawa , Mikihiko Nishitani , Noriyasu Echigo , Tomohiro Okumura , Hiroaki Ishio , Hikaru Nishitani
IPC分类号： H01J17/49 , H01J9/02
CPC分类号： H01J11/12 , H01J9/261 , H01J11/48
摘要： An object of the present invention is to provide a plasma display panel and a manufacturing method thereof that can prevent a dielectric layer and a protective layer from being deteriorated and give excellent image display performance, by performing a sealing process effectively. The object can be realized by a plasma display panel including a front panel 10 and a back panel 11 arranged in opposing to each other at a certain gap, the front panel and the back panel being sealed by a sealing layer 17 that is provided on entire peripheral portions of main surfaces of the front panel and the back panel, and the sealing layer is composed of at least one material selected from the group consisting of an organic resin material, an inorganic material, and a metal material (more specifically, a silica material as a main component and an epoxy resin material).
摘要翻译：本发明的目的在于提供一种通过有效地进行密封处理，可以防止电介质层和保护层劣化并且具有优异的图像显示性能的等离子体显示面板及其制造方法。该目的可以通过等离子体显示面板来实现，该等离子体显示面板包括以一定间隙彼此相对布置的前面板10和后面板11，前面板和背面面板被设置在整体上的密封层17密封前面板和后面板的主表面的周边部分和密封层由选自有机树脂材料，无机材料和金属材料（更具体地，二氧化硅）中的至少一种材料组成材料作为主要成分和环氧树脂材料）。

92. 发明申请

US20070232181A1 Plasma display panel and process for producing the plasma display panel 失效
标题翻译：等离子显示面板和等离子体显示面板的制造工艺
公开(公告)号：US20070232181A1
公开(公告)日：2007-10-04
申请号：US11802862
申请日：2007-05-25
申请人： Tomohiro Okumura , Mitsuo Saitoh , Masashi Morita , Takafumi Okuma , Masaharu Terauchi , Junko Asayama
发明人： Tomohiro Okumura , Mitsuo Saitoh , Masashi Morita , Takafumi Okuma , Masaharu Terauchi , Junko Asayama
IPC分类号： H01J9/00
CPC分类号： H01J11/12 , C09K11/025 , C09K11/7734 , H01J11/42
摘要： A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.
摘要翻译：通过例如氟化物的物理气相沉积，形成含氟预涂层以覆盖磷光体颗粒。然后，通过向预涂层中供给氟而形成覆盖荧光体颗粒的含氟涂层。将得到的具有涂层的荧光体颗粒以膏状施加到两个相邻肋之间的每个电极上的基板上，以在基板上的肋之间形成包括磷光体颗粒的荧光体层。基板相对于其上具有电极的另一基板定位，以在基板之间形成放电空间。放电空间填充有放电气体以产生等离子体显示面板。

93. 发明申请

US20050161160A1 Dry etching method and apparatus 审中-公开
公开(公告)号：US20050161160A1
公开(公告)日：2005-07-28
申请号：US11082732
申请日：2005-03-18
申请人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
发明人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01L21/02019 , H01J37/321 , H01J37/32935 , H01L21/30621
摘要： A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.

94. 发明授权

US06893971B2 Dry etching method and apparatus 失效
标题翻译：干蚀刻方法和设备
公开(公告)号：US06893971B2
公开(公告)日：2005-05-17
申请号：US10197465
申请日：2002-07-18
申请人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
发明人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
IPC分类号： H01J37/32 , H01L21/306 , H01L21/302
CPC分类号： H01L21/02019 , H01J37/321 , H01J37/32935 , H01L21/30621
摘要： A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.
摘要翻译：提供了能够在基于InP的化合物半导体的衬底上快速进行深蚀刻制造的干蚀刻方法和装置。蚀刻气体从反应室进入并排出，使得室的内部被控制在预定压力以下。然后通过对平面螺旋放电线圈或扁平天线施加至少13.56MHz的高频功率来在反应室中产生等离子体，该平面天线设置成面对放置在基板电极中的基于InP的化合物半导体衬底反应室，并且蚀刻基板，同时控制到达基板的等离子体和离子能量的密度。

95. 发明授权

US06830653B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06830653B2
公开(公告)日：2004-12-14
申请号：US10207183
申请日：2002-07-30
申请人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
发明人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.
摘要翻译：一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法，所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的通过向真空室供给气体并排出真空室的内部，真空室的内部被控制到规定的压力，该方法包括夹在天线和真空室之间的电介质板，天线和电介质板突出到真空室中，通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布，并且通过使天线盖固定的状态来处理基板的狭缝和天线覆盖有天线盖，使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩，并将狭缝盖固定到真空室的壁面。

96. 发明授权

US06517670B2 Etching and cleaning apparatus 失效
公开(公告)号：US06517670B2
公开(公告)日：2003-02-11
申请号：US09903069
申请日：2001-07-11
申请人： Tomohiro Okumura , Hiroshi Imai
发明人： Tomohiro Okumura , Hiroshi Imai
IPC分类号： H05H100
CPC分类号： H01L21/67253 , C23C16/4405 , H01J37/321 , H01J37/32706 , H01J37/32935 , H01J37/32963
摘要： In a plasma processing apparatus wherein plasma is generated in a vacuum chamber 1 thereby to perform etching to a substrate 8 placed on a substrate electrode 7, a voltage monitoring conductor 11 is provided in the vicinity of the substrate electrode 7, and high-frequency power is supplied to both of the substrate electrode 7 and the voltage monitoring conductor 11. Completion of etching operation is detected by monitoring a self-biasing potential generated in this voltage-monitoring conductor 11.

97. 发明申请

US20110171871A1 METHOD FOR PRODUCING PLASMA DISPLAY PANEL 审中-公开
标题翻译：生产等离子显示面板的方法
公开(公告)号：US20110171871A1
公开(公告)日：2011-07-14
申请号：US13004361
申请日：2011-01-11
申请人： Hiroyoshi Sekiguchi , Yasuhiro Asaida , Takayuki Ashida , Tomohiro Okumura
发明人： Hiroyoshi Sekiguchi , Yasuhiro Asaida , Takayuki Ashida , Tomohiro Okumura
IPC分类号： H01J9/20
CPC分类号： H01J9/38 , H01J9/261 , H01J11/12
摘要： A method for producing a plasma display panel includes: (i) providing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a barrier rib and a phosphor layer are formed on a substrate B; (ii) supplying a glass frit material onto a peripheral region of the substrate A or B to form a glass frit sealing member; (iii) opposing the front and rear panels with each other such that the glass frit sealing member is interposed therebetween; and (iv) heating the opposed front and rear panels to reach a softening point of the glass frit sealing member or a higher temperature than the softening point, while supplying a cleaning gas into a space formed between the opposed front and rear panels. Prior to the heating of step (iv), a gas is introduced into a space formed between the opposed front and rear panels, or a gas is exhausted from a space formed between the opposed front and rear panels.
摘要翻译：一种等离子体显示面板的制造方法包括：（i）提供前面板和后面板，前面板是在基板A上形成有电极A，电介质层A和保护层的面板，后面板是在基板B上形成电极B，电介质层B，隔壁和荧光体层的面板; （ii）将玻璃料材料供应到基板A或B的周边区域上以形成玻璃料密封件; （iii）使所述前面板和所述后面板彼此相对，使得所述玻璃料密封构件插入其间; 以及（iv）将相对的前后板加热到达玻璃料密封件的软化点或比软化点高的温度，同时将清洁气体供应到形成在相对的前板和后板之间的空间中。在步骤（iv）的加热之前，将气体引入形成在相对的前后面板之间的空间中，或者从形成在相对的前后面板之间的空间排出气体。

98. 发明申请

US20100291829A1 METHOD FOR PRODUCING PLASMA DISPLAY PANEL 审中-公开
标题翻译：生产等离子显示面板的方法
公开(公告)号：US20100291829A1
公开(公告)日：2010-11-18
申请号：US12778383
申请日：2010-05-12
申请人： Yoshimasa TAKII , Yosuke Okui , Tomohiro Okumura , Masashi Goto
发明人： Yoshimasa TAKII , Yosuke Okui , Tomohiro Okumura , Masashi Goto
IPC分类号： H01J9/26
CPC分类号： H01J9/395 , H01J9/261 , H01J11/12 , H01J11/40 , H01J11/48
摘要： A method for producing a plasma display panel, the method comprising: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; (ii) applying a glass frit material onto a peripheral region of the substrate A or B to form an annular glass frit sealing portion; (iii) opposing the front and rear panels with each other such that the annular glass frit sealing portion is interposed therebetween; (iv) supplying a dry gas into a space formed between the opposed front and rear panels; and (v) melting the annular glass frit sealing portion to cause the front and rear panels to be sealed wherein, in the step (i), the protective layer of the front panel is made from a metal oxide comprising at least two oxides selected from among magnesium oxide, calcium oxide, strontium oxide and barium oxide, said metal oxide having a peak between the minimum diffraction angle and the maximum diffraction angle which are selected among the diffraction angles given by respective ones of said at least two oxides in a specific orientation plane in X-ray diffraction analysis; and the step (v) is performed together with the step (iv) wherein the dry gas is supplied such that the front and rear panels do not deform until the point in time when a softening point of the annular glass frit sealing portion is reached.
摘要翻译：一种等离子体显示面板的制造方法，该方法包括：（i）制备前面板和后面板，前面板是面板，其中在基板A上形成电极A，电介质层A和保护层并且后面板是在基板B上形成电极B，电介质层B，隔壁和荧光体层的面板; （ii）将玻璃料材料施加到基板A或B的周边区域上以形成环形玻璃料密封部分; （iii）将前后面板彼此相对，使得环形玻璃料密封部分插入其间; （iv）将干燥气体供应到形成在相对的前后面板之间的空间中; 和（v）熔化环形玻璃料密封部分以使前面板和后面板被密封，其中在步骤（i）中，前面板的保护层由金属氧化物制成，该金属氧化物包括至少两种选自在氧化镁，氧化钙，氧化锶和氧化钡中，所述金属氧化物具有在最小衍射角和最大衍射角之间的峰，所述最小衍射角和最大衍射角在从特定取向的所述至少两种氧化物中的相应的衍射角度 X射线衍射分析; 并且步骤（v）与步骤（iv）一起进行，其中供给干燥气体使得前面板和后面板不变形直到达到环形玻璃料密封部分的软化点的时间点。

99. 发明授权

US07690961B2 Plasma display panel and process for producing the plasma display panel 失效
标题翻译：等离子显示面板和等离子体显示面板的制造工艺
公开(公告)号：US07690961B2
公开(公告)日：2010-04-06
申请号：US11802862
申请日：2007-05-25
申请人： Tomohiro Okumura , Mitsuo Saitoh , Masashi Morita , Takafumi Okuma , Masaharu Terauchi , Junko Asayama
发明人： Tomohiro Okumura , Mitsuo Saitoh , Masashi Morita , Takafumi Okuma , Masaharu Terauchi , Junko Asayama
IPC分类号： H01J9/00
CPC分类号： H01J11/12 , C09K11/025 , C09K11/7734 , H01J11/42
摘要： A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.
摘要翻译：通过例如氟化物的物理气相沉积，形成含氟预涂层以覆盖磷光体颗粒。然后，通过向预涂层中供给氟而形成覆盖荧光体颗粒的含氟涂层。将得到的具有涂层的荧光体颗粒以膏状施加到两个相邻肋之间的每个电极上的基板上，以在基板上的肋之间形成包括磷光体颗粒的荧光体层。基板相对于其上具有电极的另一基板定位，以在基板之间形成放电空间。放电空间填充有放电气体以产生等离子体显示面板。

100. 发明授权

US07686971B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US07686971B2
公开(公告)日：2010-03-30
申请号：US11283752
申请日：2005-11-22
申请人： Mitsuo Saitoh , Tomohiro Okumura
发明人： Mitsuo Saitoh , Tomohiro Okumura
IPC分类号： B44C1/22 , C23C16/00 , H01L21/00
CPC分类号： H01J37/3244
摘要： A plasma source includes a gas flow channel formed therein and an electrode which is fed with electric power or grounded to be maintained at a controlled electric potential and a surface of the plasma source including an opening portion of a first gas ejecting port can be placed in parallel to a position at which a to-be-processed object can be placed. The plasma source is connected to a first gas supplying device through a gas supplying port 4 and has a multi-layer construction that is constituted from two or more layers. Gas flow channels within the multi-layer construction include buffer spaces and at least one space cross-sectional area parallel to the opening cross-sectional area of the first gas ejecting ports, out of the cross-sectional areas of the buffer spaces, is greater than the opening cross-sectional area of the first gas ejecting ports.
摘要翻译：等离子体源包括形成在其中的气体流路和供给电力或接地以保持在受控电位的电极，并且包括第一气体排出口的开口部分的等离子体源的表面可以放置在平行于可以放置待处理对象的位置。等离子体源通过气体供给口4与第一气体供给装置连接，具有由两层以上构成的多层结构。多层结构内的气流通道包括缓冲空间，并且平缓于第一气体喷射口的开口横截面积的至少一个空间横截面积在缓冲空间的横截面积之外更大比第一气体喷出口的开口横截面积大。

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