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91. 发明专利

JP2007134516A Rinsing method, developing method, developing apparatus, control program, and computer-readable storage medium 有权
标题翻译：冲洗方法，开发方法，开发设备，控制程序和计算机可读存储介质
公开(公告)号：JP2007134516A
公开(公告)日：2007-05-31
申请号：JP2005326508
申请日：2005-11-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKEGUCHI HIROSHI , NAKAMURA JUNJI , YOSHIHARA KOSUKE
IPC分类号： H01L21/027 , G03F7/32
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： PROBLEM TO BE SOLVED: To provide a rinsing method capable of reducing development faults due to development residues irrespective of a surface state of a resist.
SOLUTION: The rinsing method for rinsing a substrate after an exposure pattern is developed comprises a process (step 5) wherein the substrate, on which a development solution paddle is existent after the development was finished, is made to be a stopped state or a rotated state, and a rinse solution is supplied to the center of the substrate; a process (step 6) wherein the supply of the rinse solution is stopped, in the state where the development solution paddle remains at least at an outside portion on the substrate; and a process (step 7) wherein the development solution on the substrate is shaken off together with the rinse solution by rotating the substrate at a high speed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够减少由于显影残留物而产生的显影缺陷而与抗蚀剂的表面状态无关的冲洗方法。解决方案：显影曝光图案之后冲洗衬底的冲洗方法包括一个工艺（步骤5），其中在显影完成之后存在显影液桨的衬底被制成停止状态或旋转状态，并且将冲洗溶液供应到基板的中心; 在显影液桨叶至少保持在基板的外侧部分的状态下停止供给冲洗溶液的方法（步骤6）以及通过高速旋转基板将基板上的显影液与冲洗溶液一起摇动的方法（步骤7）。版权所有（C）2007，JPO＆INPIT

92. 发明专利

JP2005210059A Development apparatus and development processing method 有权
标题翻译：开发设备和开发处理方法
公开(公告)号：JP2005210059A
公开(公告)日：2005-08-04
申请号：JP2004233617
申请日：2004-08-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OKOCHI ATSUSHI , YAMAMOTO TARO , TAKEGUCHI HIROSHI , KYODA HIDEJI , YOSHIHARA KOSUKE
IPC分类号： G03F7/30 , H01L21/00 , H01L21/027
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To perform development with a small quantity of a developer in developing a substrate after a resist is coated on the surface of the substrate and the substrate is exposed. SOLUTION: When the resist is coated on the surface of a substrate held on a substrate retention section, and development processing is performed on the substrate after exposed, the development processing is constructed such that the substrate is rotated around a perpendicular axis, and a developer nozzle is moved from the outside of the substrate to the center while the developer is delivered in a strip form from an outet of a hand shape, for example, a strip shape, and the developer is spirally supplied. In this case, since the moving velocity of the developer nozzle can be set at a bigger value, the time of the development can be shortened, and the developer can be supplied in thin films, the development can be performed with a small quantity of the developer. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在抗蚀剂涂覆在基板的表面上并暴露基板之后，用少量的显影剂在显影基板中进行显影。解决方案：当将抗蚀剂涂覆在保持在基板保持部分上的基板的表面上，并且在曝光后对基板进行显影处理时，显影处理被构造成使得基板围绕垂直轴旋转，并且显影剂喷嘴从基板的外部移动到中心，同时显影剂以手形形状例如带状形式从带状输送，并且显影剂被螺旋状供给。在这种情况下，由于可以将显影剂喷嘴的移动速度设定为更大的值，因此可以缩短显影时间，并且能够以薄膜供给显影剂，因此可以以少量的开发商。版权所有（C）2005，JPO＆NCIPI

93. 发明专利

JP2005166999A Processing method of substrate and method for reducing influence on processing of substrate by fluctuation of exposure quantity or focal position when substrate is exposed 审中-公开
标题翻译：衬底的加工方法和减少衬底暴露时暴露量或焦点位置的影响来减少衬底加工的影响的方法
公开(公告)号：JP2005166999A
公开(公告)日：2005-06-23
申请号：JP2003404422
申请日：2003-12-03
申请人： Semiconductor Leading Edge Technologies Inc , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社半導体先端テクノロジーズ
发明人： HORI SHINYA , ENOMOTO MASASHI , YOSHIHARA KOSUKE , ITANI TOSHIRO , FURUKAWA TAKAMITSU , KAWAGUCHI ETSURO , MATSUNAGA KENTARO
IPC分类号： G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce influence to a processing of a wafer due to fluctuation of exposure quantity and a focal position when a wafer is exposed.
SOLUTION: A PEB device 44 is divided into a heating front chamber 61 and a heating chamber 62. Drying gas can be supplied to the respective chambers 61 and 62 from a drying gas supplying device 77. At the time of a resist application processing, the wafer W to which resist liquid including a fluorine content compound is applied is conveyed to the heating front chamber 61 after an exposure processing. The heating front chamber 61 is replaced by drying atmosphere later. The wafer W is transported into the heat chamber 62 which is previously maintained to drying atmosphere, and is heated within drying atmosphere. Resist liquid containing the fluorine content compound is applied to the wafer W at the time of applying resist. The wafer W is heated in drying atmosphere at the time of a heating processing after exposure. Thus, influence exerted on pattern line width on the wafer due to fluctuation of exposure quantity and the focal position at the time of exposure is reduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了减少由于曝光量的波动和晶片曝光时的焦点位置对晶片的处理的影响。解决方案：PEB装置44被分成加热前室61和加热室62.干燥气体可以从干燥气体供应装置77供应到各个室61和62中。在抗蚀剂施加时在施加了包含氟含量化合物的抗蚀剂液体的晶片W在曝光处理之后被传送到加热前室61。稍后，由干燥气氛代替加热前室61。将晶片W输送到预先保持干燥气氛的加热室62中，并在干燥气氛中加热。在施加抗蚀剂时，将包含含氟化合物的抗蚀剂液体施加到晶片W. 在曝光后的加热处理中，在干燥气氛中加热晶片W. 因此，由于暴露量的波动和曝光时的焦点位置而对晶片上的图案线宽度的影响减小。版权所有（C）2005，JPO＆NCIPI

94. 发明专利

JP2004039828A Application film formation method and prewet agent 审中-公开
公开(公告)号：JP2004039828A
公开(公告)日：2004-02-05
申请号：JP2002194195
申请日：2002-07-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SHIDE HIDEO , YOSHIHARA KOSUKE , HORI SHINYA
IPC分类号： G03F7/16 , B05D1/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an application film formation method reducing the amount of application liquid used by clarifying a condition suitable for a solvent for use on the assumption that a prewet method is employed, and to provide a prewet agent. SOLUTION: The solvent dissolving the application liquid supplied to a substrate to be treated includes a process (ST3) for supplying the prewet agent of 2.0 cP or higher in its viscosity rate, a process (ST4) for spreading the prewet agent on the whole surface of the substrate to be treated, and a process (ST5) for forming an application film by spreading the application liquid radially outward the substrate to be treated. COPYRIGHT: (C)2004,JPO

95. 发明专利

JP2004022805A Heat treatment device and heat treatment method 有权
公开(公告)号：JP2004022805A
公开(公告)日：2004-01-22
申请号：JP2002175626
申请日：2002-06-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TERASHITA YUICHI , YOSHIHARA KOSUKE
IPC分类号： G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment device and a heat treatment method for maintaining the temperature uniformity within the surface of a substrate on which a coat film is formed.
SOLUTION: A PEB unit (PEB) comprises a stage 31 for mounting a wafer on which a resist film is formed; a heater 35 for heating the stage 31 to a predetermined temperature; a lift pin 32 arranged through the stage 31; and a elevating device 33 for holding a tip position of the lift pin 32 for supporting the wafer W at an arbitrary height. The wafer W is lifted up above the stage 31 with the lift pin 32 so that the wafer W mounted on the stage 31 and heat processed is cooled approximately evenly all over. At this time, the regulation of the height in holding the wafer W controls cooling speed of the wafer W.
COPYRIGHT: (C)2004,JPO

96. 发明专利

JP2003077820A Developing apparatus and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：JP2003077820A
公开(公告)日：2003-03-14
申请号：JP2001269320
申请日：2001-09-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO TARO , YOSHIHARA KOSUKE , TAKEGUCHI HIROSHI , KYODA HIDEJI , FUJIMOTO AKIHIRO
IPC分类号： G03F7/30 , B05C5/02 , B05C11/10 , B05D1/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To uniformize the line width of a pattern, even when using a resist having a high dissolving rate to a developer in a method of spreading the developer from a feed nozzle being moved from one end of an exposure-processed substrate to the other end.
SOLUTION: A feed nozzle having a length corresponding to the diameter of a semiconductor wafer has two rows of first and second discharge holes parallel in the moving direction of the nozzle that is the length direction thereof, so that their developer discharge directions mutually approach, resulting in the streams of the developer discharged from the first and second discharge holes to mutually interfere heavily, to stir the developer and dilute dissolved components of a resist to restrict undissolved portions from dissolving, thereby obtaining a proper resist pattern of uniform line width. The feed nozzle can have a gas feed hole for discharging gas to feed the gas on the surface of the developer.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了使图案的线宽均匀化，即使在将显影剂从曝光处理基板的一端移动的供给喷嘴展开的方法中，使用具有高显色剂溶解速率的抗蚀剂时，另一端解决方案：具有与半导体晶片的直径相对应的长度的进料喷嘴具有沿喷嘴长度方向的移动方向平行的两列第一和第二排出孔，使得它们的显影剂排出方向相互接近，结果在从第一和第二排出孔排出的显影剂流中相互干扰较大，搅拌显影剂并稀释抗蚀剂的溶解成分以限制未溶解部分的溶解，从而获得均匀线宽的适当的抗蚀剂图案。进料喷嘴可以具有用于排出气体以供给显影剂表面上的气体的气体供给孔。

97. 发明专利

JP2015008273A 基板洗浄装置、基板洗浄方法及び記憶媒体有权
标题翻译：基板清洁装置，基板清洁方法和存储介质
公开(公告)号：JP2015008273A
公开(公告)日：2015-01-15
申请号：JP2014058221
申请日：2014-03-20
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： OKOCHI ATSUSHI , YOSHIHARA KOSUKE , ICHINOMIYA HIROSHI , NISHIHATA HIROSHI , NAITO RYOICHIRO
IPC分类号： H01L21/304 , H01L21/027
摘要：【課題】基板を回転させながら、基板の表面を洗浄液により洗浄するにあたり、洗浄処理後の液滴の残りを抑制し、残渣を低減する技術を提供すること。【解決手段】洗浄液ノズル41及び窒素ガスノズル51を用いて、ウエハWを回転させながらウエハWの中心部に洗浄液及び窒素ガスを順次吐出し、両ノズルをウエハWの周縁部側に移動した後、第1の洗浄液ノズル41の移動軌跡から外れる位置に設定された第2の洗浄液ノズル43に洗浄液の吐出を切り替える。そして洗浄液の吐出及びガスの吐出を行いながら両ノズルをウエハWの周縁側に向けて移動させ、第2の洗浄液ノズル43の吐出位置からウエハWの中心部までの距離と第2の窒素ガスノズル53の吐出位置からウエハWの中心部までの距離との差が徐々に小さくなるように各ノズルが移動する。【選択図】図15
摘要翻译：要解决的问题：提供一种能够在清洗处理后抑制液滴残留的技术，并且在旋转基板的同时用清洗液清洗基板的表面时减少残留物。解决方案：通过使用清洗液喷嘴41和氮气气体喷嘴51，清洗液和氮气在旋转晶片W的同时依次排出到晶片W的中心部分，并且两个喷嘴移动到晶片W的周边部分侧。然后，清洗液体的排出切换到设置在偏离第一清洗液喷嘴41的移动轨迹的位置的第二清洗液喷嘴43.两个喷嘴在执行清洗液的排出的同时移动到晶片W的周边边缘，气体的排出，每个喷嘴移动，从而逐渐减小从第二清洗液喷嘴43的排出位置到分钟的距离并且从第二氮气喷嘴53的排出位置到晶片W的中心部分的距离。

98. 发明专利

JP2014203949A 基板処理方法、基板処理装置及び記憶媒体有权
标题翻译：基板处理方法，基板处理装置和记录介质
公开(公告)号：JP2014203949A
公开(公告)日：2014-10-27
申请号：JP2013078515
申请日：2013-04-04
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： TANAKA KEIICHI , YOSHIHARA KOSUKE , IZEKI TOSHIHIRO
IPC分类号： H01L21/027 , G03F7/26 , G03F7/30
CPC分类号： H01L21/67051 , B08B3/024 , B08B5/00 , G03F7/3021 , H01L21/67028 , H01L21/67034
摘要：【課題】現像後の基板を洗浄するにあたり、レジストパターンを形成する壁部の倒壊及び前記パターンの線幅の変化を抑えることができる技術を提供すること。【解決手段】レジストパターンを形成するために露光後の基板の表面に現像液を供給する現像工程と、次いで、前記基板の当該表面に洗浄液を供給し、前記現像により生じた残渣を基板から除去する洗浄工程と、次いで、前記レジストパターンを構成するレジストの壁部への浸透が抑えられるように浸透抑制剤が含まれ、その表面張力が50mN/m以下である置換液を前記基板の表面に供給し、前記基板上の洗浄液を前記置換液により置換する置換工程と、次いで、前記基板を回転させながら、基板の中心部にガスを供給して乾燥領域を形成し、遠心力により前記乾燥領域を基板の周縁部に広げることにより基板の表面を乾燥させる乾燥工程と、を行う。【選択図】図18
摘要翻译：要解决的问题：提供一种技术，其允许抑制形成抗蚀剂图案的壁的破坏和图案的线宽的变化，在显影后清洁基板时。解决方案：显影步骤，向曝光后的基板的表面，以形成抗蚀剂图案;清洗步骤，将清洗液供给到基板的表面;以及从基板除去由显影产生的残留物;更换步骤，一种渗透缓凝剂，用于阻止构成抗蚀剂图案的抗蚀剂渗透到壁中并具有50mN / m以下的表面张力，并将其置于基材表面，并用替换液体代替基材上的清洗液; 以及干燥步骤，通过在旋转基板的同时向基板的中心部分供应气体来形成干燥区域，并且通过离心力将干燥区域延伸到基板的周边边缘来干燥基板的表面。

99. 发明专利

JP2014140011A Liquid processing apparatus, liquid processing method and storage medium for liquid processing 有权
标题翻译：液体加工设备，液体加工方法和液体加工储存介质
公开(公告)号：JP2014140011A
公开(公告)日：2014-07-31
申请号：JP2013206090
申请日：2013-10-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAYANAGI YASUHARU , MINEKAWA YUKIE , YOSHIHARA KOSUKE , TERASHITA YUICHI , KOSHO TOMONOBU
IPC分类号： H01L21/027 , B05C11/08 , B05C11/10 , G03F7/16 , G03F7/30
CPC分类号： H01L21/67017 , F04B43/0081 , F04B49/065 , F04B2205/503 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To obtain filtration efficiency by a single filter, which is similar to the filtration efficiency when a plurality of filters is provided, to prevent decrease in throughput, and to eliminate bubbles present in a process liquid.SOLUTION: A liquid processing apparatus carries out the following processes. Based on a control signal from a control unit 101, a part of a resist liquid L sucked by a pump 70 and passed through a filter 52 is discharged from a discharge nozzle 7, and the remaining resist liquid is returned to a supply conduit 51b on a primary side of the filter 52. In the above process, a process of actualizing microbubbles present in the resist liquid in a region between the pump 70 and a trap tank 53, and a process of degassing the actualized bubbles from the trap tank 53 are repeated a plurality of times by reducing the pressure and then pressurizing in the above region by driving the pump 70.
摘要翻译：要解决的问题：通过单个过滤器获得过滤效率，其与提供多个过滤器时的过滤效率相似，以防止生产量降低，并消除处理液体中存在的气泡。溶液：液体处理仪器进行以下处理。基于来自控制单元101的控制信号，由泵70吸引并通过过滤器52的抗蚀剂液体L的一部分从排出喷嘴7排出，剩余的抗蚀剂液体返回至供给导管51b 过滤器52的初级侧。在上述过程中，在泵70和捕集罐53之间的区域中实现存在于抗蚀剂液体中的微泡的过程以及从捕集罐53脱气所实现的气泡的过程是通过驱动泵70，通过降低压力并在上述区域中加压来重复多次。

100. 发明专利

JP2014123773A Substrate cleaning method 有权
标题翻译：基板清洗方法
公开(公告)号：JP2014123773A
公开(公告)日：2014-07-03
申请号：JP2014053800
申请日：2014-03-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , YOSHIDA YUICHI , YAMAMOTO TARO
IPC分类号： H01L21/304 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method which, when cleaning a surface of a substrate having a static contact angle of water of 85 degrees or more, can obtain a high cleaning effect and can clean the substrate in a short period of time.SOLUTION: A substrate cleaning method includes: first discharging a cleaning liquid from a cleaning nozzle to the center of a substrate while rotating the substrate and expanding the liquid to the entire surface of the substrate by centrifugal force; then changing the discharge position of the cleaning liquid on the substrate to an eccentric position deviated from the center of the substrate while rotating the substrate; discharging a gas from a gas nozzle to the center of the substrate to form a dry region of the cleaning liquid in a state of setting a distance to 9 mm to 15 mm, the distance between a gas discharge position side interface at the discharge position of the cleaning liquid and a cleaning liquid discharge position side interface at the discharge position of the gas by the gas nozzle; and thereafter moving a supply position of the cleaning liquid toward the peripheral edge of the substrate at a speed lower than a speed at which the dry region expands outward.
摘要翻译：要解决的问题：提供一种方法，当清洁具有85度或更大的水的静态接触角的基底的表面时，可以获得高清洁效果并且可以在短时间内清洁基底。基板清洗方法包括：首先将清洗液从清洗喷嘴排出到基板的中心，同时旋转基板并通过离心力将液体膨胀到基板的整个表面; 然后在旋转基板的同时将基板上的清洗液的排出位置改变为偏离基板中心的偏心位置; 将气体从气体喷嘴排出到基板的中心，以形成距离为9mm至15mm的状态的清洁液体的干燥区域，排出位置处的排气位置侧界面之间的距离所述清洗液和所述气体喷出口的排出位置处的清洗液排出位置侧界面; 然后以比干燥区域向外扩展的速度低的速度将清洗液的供给位置朝向基板的周缘移动。

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