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91. 发明授权

US09029064B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US09029064B2
公开(公告)日：2015-05-12
申请号：US13350153
申请日：2012-01-13
申请人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe , Kazuhiro Katayama
发明人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe , Kazuhiro Katayama
IPC分类号： G03F7/004 , G03F7/20 , G03F7/32
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/094 , G03F7/11 , G03F7/20 , G03F7/2037 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
摘要翻译：通过将包含含有具有与酸不稳定基团键合的氮原子的重复单元，酸发生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，预烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。

92. 发明授权

US08338078B2 Photoresist undercoat-forming material and patterning process 有权
标题翻译：光刻胶底涂层成型材料和图案化工艺
公开(公告)号：US08338078B2
公开(公告)日：2012-12-25
申请号：US12581625
申请日：2009-10-19
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/76
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译：包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。

93. 发明申请

US20120249995A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：US20120249995A1
公开(公告)日：2012-10-04
申请号：US13494746
申请日：2012-06-12
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03B27/32
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要翻译：本发明是用于浸没式光刻的保护膜材料，其能够进行希望的浸渍光刻，可以与光致抗蚀剂层的显影同时除去，并且具有优异的工艺适应性。本发明还包括使用该材料形成图案的方法。更具体地说，本发明是一种保护膜材料，其包含（i）包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含具有无氟烷基和任选的碱可溶重复单元的重复单元，或（ii）含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元无氟烷基和任选的碱溶性重复单元。

94. 发明申请

US20120141938A1 BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：基本化合物，化学稳定组合物和方法
公开(公告)号：US20120141938A1
公开(公告)日：2012-06-07
申请号：US13311192
申请日：2011-12-05
申请人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe
发明人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe
IPC分类号： G03F7/20 , C07C317/48 , G03F7/025 , C07D209/34 , G03F7/027 , C07C229/46 , C07C229/40
CPC分类号： C07D239/28 , G03F7/0045
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.
摘要翻译：包含基础聚合物，酸产生剂和具有酸不稳定基团取代的羧基的β-丙氨酸，γ-氨基丁酸或5-氨基戊酸衍生物形式的胺猝灭剂的化学放大抗蚀剂组合物具有高暴露前后的碱溶解速度对比度，形成高分辨率，最小粗糙度和宽焦距的良好轮廓图案。

95. 发明申请

US20110129777A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学稳定组合物和图案化方法
公开(公告)号：US20110129777A1
公开(公告)日：2011-06-02
申请号：US12957785
申请日：2010-12-01
申请人： Jun Hatakeyama , Takeru Watanabe
发明人： Jun Hatakeyama , Takeru Watanabe
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound of thiomorpholine dioxide structure has many advantages including a high contrast of alkaline dissolution rate before and after exposure, a good pattern profile after exposure, minimized roughness, and a wide focus margin. The resist composition which may be positive or negative is useful for the fabrication of VLSI and photomasks.
摘要翻译：包含基础聚合物，酸产生剂和硫代吗啉二氧化物结构的碱性化合物的化学放大抗蚀剂组合物具有许多优点，包括暴露前后碱性溶解速率的高对比度，曝光后的良好图案轮廓，最小化的粗糙度和宽焦距可以为正或负的抗蚀剂组合物可用于制造VLSI和光掩模。

96. 发明申请

US20100159392A1 PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20100159392A1
公开(公告)日：2010-06-24
申请号：US12639621
申请日：2009-12-16
申请人： Jun Hatakeyama , Takeru Watanabe , Masashi Iio , Kazuhiro Katayama
发明人： Jun Hatakeyama , Takeru Watanabe , Masashi Iio , Kazuhiro Katayama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/405
摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units and acid labile group-containing recurring units onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, applying an amine or oxazoline compound to the first resist pattern for inactivation, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译：通过将包含含有内酯重复单元和含酸不稳定基团的重复单元的共聚物的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂形成图案将第一抗蚀剂图案施加胺或恶唑啉化合物以进行灭活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

97. 发明申请

US20070275326A1 Resist protective film composition and patterning process 有权
标题翻译：抗保护膜组成和图案化工艺
公开(公告)号：US20070275326A1
公开(公告)日：2007-11-29
申请号：US11798471
申请日：2007-05-14
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.
摘要翻译：公开了一种用于在光致抗蚀剂膜上形成保护膜的抗蚀保护膜组合物，其包括：至少包含具有一个或多个选自羧基和α-三氟甲醇基团的基团的重复单元的聚合物; 和胺化合物。可以提供一种抗蚀剂保护膜组合物，当在光致抗蚀剂膜上形成保护膜时，可以提供更确定的矩形和优异的图案。

98. 发明申请

US20070275325A1 Photoresist undercoat-forming material and patterning process 有权
标题翻译：光刻胶底涂层成型材料和图案化工艺
公开(公告)号：US20070275325A1
公开(公告)日：2007-11-29
申请号：US11798105
申请日：2007-05-10
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Katsuhiro Kobayashi
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Katsuhiro Kobayashi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , C08G8/20 , G03F7/0397 , G03F7/40
摘要： A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein R1 and R2 are H, alkyl, aryl or alkenyl, R3 and R4 are H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, R5 and R6 are alkyl having a ring structure, or R5 and R6 bond together to form a ring. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2/BCl3 gases for substrate processing.
摘要翻译：包含式（1）的特定双酚化合物的材料可用于形成光致抗蚀剂底涂层，其中R 1和R 2均为H，烷基，芳基或链烯基， SO 3和R 4是H，烷基，烯基，芳基，缩醛，酰基或缩水甘油基，R 5和R 6 >是具有环结构的烷基，或R 5和R 6键连接在一起形成环。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的抗蚀刻性，如通过CF 4 / CHF 3＆lt; 2＆gt;和Cl 2/2 / 3Cl 3气体，用于基板处理。

99. 发明授权

US08828641B2 Chemically amplified resist composition and patterning process 有权
标题翻译：化学扩增抗蚀剂组合物和图案化工艺
公开(公告)号：US08828641B2
公开(公告)日：2014-09-09
申请号：US12957785
申请日：2010-12-01
申请人： Jun Hatakeyama , Takeru Watanabe
发明人： Jun Hatakeyama , Takeru Watanabe
IPC分类号： G03F7/004 , G03F7/039 , G03F7/26 , G03F7/038
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound of thiomorpholine dioxide structure has many advantages including a high contrast of alkaline dissolution rate before and after exposure, a good pattern profile after exposure, minimized roughness, and a wide focus margin. The resist composition which may be positive or negative is useful for the fabrication of VLSI and photomasks.
摘要翻译：包含基础聚合物，酸产生剂和硫代吗啉二氧化物结构的碱性化合物的化学放大抗蚀剂组合物具有许多优点，包括暴露前后碱性溶解速率的高对比度，曝光后的良好图案轮廓，最小化的粗糙度和宽焦距可以为正或负的抗蚀剂组合物可用于制造VLSI和光掩模。

100. 发明授权

US08501384B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08501384B2
公开(公告)日：2013-08-06
申请号：US12986791
申请日：2011-01-07
申请人： Jun Hatakeyama , Takeru Watanabe , Seiichiro Tachibana
发明人： Jun Hatakeyama , Takeru Watanabe , Seiichiro Tachibana
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , C09D125/18 , C09D133/14 , G03F7/0045 , G03F7/0046 , G03F7/2041
摘要： A positive resist composition comprising a polymer having a tetrahydrobenzocycloheptane-substituted secondary or tertiary carboxyl group ester as an acid labile group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：包含具有四氢苯并环庚烷取代的仲或叔羧基酯作为酸不稳定基团的聚合物的正性抗蚀剂组合物在曝光前后显示出高的对比度的碱溶解速率，高分辨率，良好的图案轮廓和暴露后的最小边缘粗糙度，抑制酸扩散速度的显着效果，并且提高耐蚀刻性。

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