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    • 95. 发明授权
    • Image sensing apparatus and method
    • 影像感测装置及方法
    • US06333963B1
    • 2001-12-25
    • US09081553
    • 1998-05-20
    • Noriyuki KaifuYutaka EndoIsao KobayashiToshio KameshimaHideki NonakaTakashi Ogura
    • Noriyuki KaifuYutaka EndoIsao KobayashiToshio KameshimaHideki NonakaTakashi Ogura
    • H05G164
    • H04N5/32H04N5/365
    • The invention relates to an image sensing apparatus and method which form an image by using radiation including visible light, X-rays, and the like (which is generically called light in the invention), and also relates to a -one- or two-dimensional image sensing apparatus such as a facsimile apparatus, a digital copying machine, a still camera, or a radiation image sensing apparatus, and an image sensing method. This image sensing apparatus uses a photo-electric conversion device. The image sensing apparatus has an image sensing means including a plurality of photo-electric elements arranged one- or two-dimensionally to obtain image information with a high S/N ratio by solving the problem that errors contained in the photographic output cannot be completely corrected because of the differences between the conditions set to obtain data to be used for correction and the conditions set for actual photographing operation. The image sensing apparatus includes a means for storing a photographic output in the photographic mode, a means for storing photographic conditions in the photographic mode, means for obtaining a correction output in the correction mode which is activated by using the stored photographic conditions, and a means for correcting the photographic output by using the correction output. With this arrangement, correction data is acquired under operation conditions set in accordance with operation conditions in photographing operation.
    • 本发明涉及一种通过使用包括可见光,X射线等(在本发明中被称为光)的辐射来形成图像的图像感测装置和方法,还涉及一个或两个 诸如传真机,数字复印机,静态照相机或放射线图像感测装置的三维图像感测装置和图像感测方法。 该摄像装置使用光电转换装置。 图像感测装置具有图像感测装置,其包括一维或二维布置的多个光电元件,以通过解决摄影输出中包含的误差不能被完全校正的问题来获得具有高S / N比的图像信息 由于设定为获得用于校正的数据的条件与为实际拍摄操作设定的条件之间的差异。 图像感测装置包括用于以摄影模式存储照相输出的装置,用于在拍摄模式下存储照相条件的装置,用于获得通过使用所存储的摄影条件激活的校正模式中的校正输出的装置,以及 用于通过使用校正输出校正摄影输出的装置。 利用这种布置,在根据拍摄操作中的操作条件设置的操作条件下获取校正数据。
    • 98. 发明授权
    • Semiconductor device with trench isolation structure and fabrication
method thereof
    • 具有沟槽隔离结构的半导体器件及其制造方法
    • US5929504A
    • 1999-07-27
    • US97664
    • 1998-06-16
    • Toru MogamiTakashi Ogura
    • Toru MogamiTakashi Ogura
    • H01L21/76H01L21/762H01L29/00
    • H01L21/76224
    • A semiconductor device with the trench isolation structure is provided, in which the leakage current problem does not occur. This device is comprised of a semiconductor substrate, an isolation trench formed in a surface region of the substrate and filled with first and second isolation dielectrics, an interlayer dielectric layer formed on the surface region of the substrate to cover the isolation trench, and a conductive layer formed on the interlayer dielectric layer to be overlapped with the isolation trench. The interlayer dielectric layer has a contact hole located near the isolation trench. The contact hole is formed by etching. The conductive layer is contacted with and electrically connected to a region of the substrate through the contact hole of the interlayer dielectric layer. The first isolation dielectric serves as a primary insulator. The second isolation dielectric serves as a secondary insulator. The first isolation dielectric has a pair of depressions, each having one side contiguous with one of the pair of top corners of the isolation trench. The pair of depressions of the first isolation dielectric are filled with the second isolation dielectric. The second dielectric is lower in etch rate than that of the first dielectric in the process for forming the contact hole.
    • 提供了具有沟槽隔离结构的半导体器件,其中不会发生漏电流问题。 该器件由半导体衬底,形成在衬底的表面区域中并填充有第一和第二隔离电介质的隔离沟槽,形成在衬底的表面区域上以覆盖隔离沟槽的层间绝缘层和导电 层,形成在层间电介质层上以与隔离沟槽重叠。 层间电介质层具有位于隔离沟槽附近的接触孔。 接触孔通过蚀刻形成。 导电层通过层间电介质层的接触孔与衬底的区域接触并电连接。 第一隔离绝缘体用作初级绝缘体。 第二隔离电介质用作次级绝缘体。 第一隔离电介质具有一对凹陷,每个凹陷具有与隔离沟槽的一对顶角中的一个邻接的一侧。 第一隔离电介质的一对凹陷填充有第二隔离电介质。 在形成接触孔的工艺中,第二电介质的蚀刻速率低于第一电介质。