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91. 发明授权

US08018690B2 CPP magnetic recording head with self-stabilizing vortex configuration 有权
标题翻译： CPP磁记录头具有自稳定涡流配置
公开(公告)号：US08018690B2
公开(公告)日：2011-09-13
申请号：US12079470
申请日：2008-03-27
申请人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
发明人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996 , G11C11/16 , Y10T29/49043 , Y10T29/49048 , Y10T29/49053
摘要： A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby makes the pinned layer directionally more stable as well. The lack of lateral horizontal bias layers or in-stack biasing allows the formation of closely configured shields, thereby providing protection against side-reading. The vortex magnetization is accomplished by first magnetizing the free layer in a uniform vertical field, then applying a vertical current while the field is still present.
摘要翻译：提供了CPP MTJ或GMR读取传感器，其中自由层通过周向涡流构型中的磁化而自稳定。这种磁化允许钉扎层在平行于ABS平面的方向上被磁化，从而使钉扎层也更方向地更稳定。缺少横向水平偏置层或叠层偏压允许形成紧密配置的屏蔽，从而提供防止侧读的保护。涡流磁化是通过在均匀的垂直场中首先磁化自由层，然后在场仍然存在时施加垂直电流来实现的。

92. 发明申请

US20110062536A1 Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory 有权
标题翻译：部分包层写入线的设计和制造方法，以增强磁随机存取存储器的写入裕度
公开(公告)号：US20110062536A1
公开(公告)日：2011-03-17
申请号：US12584952
申请日：2009-09-15
申请人： Tai Min , Wai-Ming J. Kan , David E. Heim , Chyu Jiuh Torng
发明人： Tai Min , Wai-Ming J. Kan , David E. Heim , Chyu Jiuh Torng
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01L43/08 , H01L43/12
摘要： A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.
摘要翻译：公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及在MTJ和导线之间形成的高导电性，非磁性间隔控制层。间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。避免半选择错误问题，同时保持较高的写入效率。间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

93. 发明申请

US20100178715A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20100178715A1
公开(公告)日：2010-07-15
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

94. 发明申请

US20100128518A1 Novel spin momentum transfer MRAM design 有权
标题翻译：新型自旋动量转移MRAM设计
公开(公告)号：US20100128518A1
公开(公告)日：2010-05-27
申请号：US12313708
申请日：2008-11-24
申请人： Tai Min
发明人： Tai Min
IPC分类号： G11C11/14 , H01L21/00 , H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/12
摘要： We describe the structure and method of formation of a STT MTJ or GMR MRAM cell element that utilizes transfer of spin torque as a mechanism for changing the magnetization direction of a free layer. The critical current is reduced by constructing the free layer as a lamination comprising two ferromagnetic layers sandwiching a coupling valve layer. When the Curie temperature of the coupling valve layer is above the temperature of the cell, the two ferromagnetic layers are exchange coupled in parallel directions of their magnetization. When the coupling valve layer is above its Curie temperature, it no longer exchange couples the layers and they are magnetostatically coupled. In the exchange coupled configuration, the free layer serves to store data and the cell can be read. In its magnetostatically coupled configuration, the cell can be more easily written upon because one of the layers can assist the spin torque transfer by its magnetostatic coupling. If the free layer is formed as a multi-layered lamination of N periodically repeating combinations of a ferromagnetic layer and a coupling valve layer, the critical current can be reduced by a factor of N.
摘要翻译：我们描述了利用自旋转矩传递作为改变自由层的磁化方向的机制的STT MTJ或GMR MRAM单元元件的形成结构和方法。通过构成自由层作为包含夹着耦合阀层的两个铁磁层的层压来降低临界电流。当耦合阀层的居里温度高于电池的温度时，两个铁磁层在其磁化的平行方向上交换耦合。当耦合阀层高于其居里温度时，它不再交换耦合层，并且它们是静磁耦合的。在交换耦合配置中，自由层用于存储数据，并且可以读取单元。在其静磁耦合配置中，电池可以更容易地被写入，因为其中一个层可以通过其静磁耦合来辅助自旋转矩传递。如果自由层形成为铁磁层和耦合阀层的N个周期性重复组合的多层叠层，则临界电流可以降低N倍

95. 发明授权

US07588945B2 Multi-state thermally assisted storage 有权
标题翻译：多状态热辅助存储
公开(公告)号：US07588945B2
公开(公告)日：2009-09-15
申请号：US12012576
申请日：2008-02-04
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C11/5607
摘要： A process for manufacturing a random access memory cell, that is capable of storing multiple information states in a single physical bit, is described. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.
摘要翻译：描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元的制造过程。基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

96. 发明授权

US07486545B2 Thermally assisted integrated MRAM design and process for its manufacture 失效
标题翻译：热辅助集成MRAM设计及其制造工艺
公开(公告)号：US07486545B2
公开(公告)日：2009-02-03
申请号：US11264587
申请日：2005-11-01
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675
摘要： A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.
摘要翻译：存储元件使用传统的MTJ进行读取，另外一个单独的磁性参考堆栈在信息被写入时被短暂加热。然后将该信息静磁施加在位于附近的MTJ自由层上。以这种方式，MTJ可以针对最大dr / r进行优化，而参考堆可以优化以获得最佳稳定性，因为没有半选择问题。还描述了用于制造存储元件的工艺。

97. 发明授权

US07466583B2 MRAM with split read-write cell structures 失效
标题翻译：具有分割读写单元结构的MRAM
公开(公告)号：US07466583B2
公开(公告)日：2008-12-16
申请号：US11331998
申请日：2006-01-13
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , H01L21/8246
CPC分类号： H01L27/228
摘要： An MRAM cell is formed in two separate portions. A first portion, that includes a pinned layer, a tunneling barrier layer and first free layer part, is used to read the value of a stored bit of information. A second portion includes a second free layer part on which information is written and stored. The second free layer part is formed with a high aspect ratio cross-section that renders it strongly magnetically anisotropic and enables it to couple to the relatively isotropic first free layer through a magnetostatic interaction. This interaction aligns the magnetization of the first free layer part in an opposite direction to the magnetization of the second free layer part. The magnetic orientation of the first free layer part relative to that of its adjacent pinned layer determines the resistance state of the first cell portion and this resistance state can be read by passing a current through the first cell portion. Thus, in effect, the first cell portion becomes a remote sensing device for the magnetization orientation of the second free layer part.
摘要翻译： MRAM单元分成两部分形成。使用包括被钉扎层，隧道势垒层和第一自由层部分的第一部分来读取存储的信息位的值。第二部分包括其上写入和存储信息的第二自由层部分。第二自由层部分形成有高纵横比的横截面，其使得其具有强烈的磁性各向异性，并使其能够通过静磁相互作用耦合到相对各向同性的第一自由层。这种相互作用使第一自由层部分的磁化方向与第二自由层部分的磁化方向相反。第一自由层部分相对于其相邻被钉扎层的磁取向确定第一单元部分的电阻状态，并且可以通过使电流通过第一单元部分来读取该电阻状态。因此，实际上，第一单元部分成为用于第二自由层部分的磁化取向的遥感装置。

98. 发明授权

US07394123B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US07394123B2
公开(公告)日：2008-07-01
申请号：US11438179
申请日：2006-05-22
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。因此，线和无细胞层之间存在均匀的间隔。

99. 发明授权

US07356909B1 Method of forming a CPP magnetic recording head with a self-stabilizing vortex configuration 失效
标题翻译：形成具有自稳定涡流构造的CPP磁记录头的方法
公开(公告)号：US07356909B1
公开(公告)日：2008-04-15
申请号：US10953085
申请日：2004-09-29
申请人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
发明人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996 , G11C11/16 , Y10T29/49043 , Y10T29/49048 , Y10T29/49053
摘要： A method is provided for forming a CPP MTJ or GMR read sensor in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby makes the pinned layer directionally more stable as well. The lack of lateral horizontal bias layers or in-stack biasing allows the formation of closely configured shields, thereby providing protection against side-reading. The vortex magnetization is accomplished by first magnetizing the free layer in a uniform vertical field, then applying a vertical current while the field is still present.
摘要翻译：提供了一种用于形成CPP MTJ或GMR读取传感器的方法，其中自由层通过周向涡流构型中的磁化而自稳定。这种磁化允许钉扎层在平行于ABS平面的方向上被磁化，从而使钉扎层也更方向地更稳定。缺少横向水平偏置层或叠层偏压允许形成紧密配置的屏蔽，从而提供防止侧读的保护。涡流磁化是通过在均匀的垂直场中首先磁化自由层，然后在场仍然存在时施加垂直电流来实现的。

100. 发明申请

US20070008661A1 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US20070008661A1
公开(公告)日：2007-01-11
申请号：US11515533
申请日：2006-09-05
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由与在自由层上形成的薄的反铁磁层的磁耦合。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

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