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    • 94. 发明授权
    • Positive working photoresist composition
    • 正工作光致抗蚀剂组成
    • US06506535B1
    • 2003-01-14
    • US09698221
    • 2000-10-30
    • Kazuyoshi MizutaniKenichiro SatoKunihiko Kodama
    • Kazuyoshi MizutaniKenichiro SatoKunihiko Kodama
    • G03C172
    • G03F7/0758G03F7/0045G03F7/0395G03F7/0397Y10S430/106
    • Disclosed is a positive working photoresist composition comprising an acid-decomposable polymer containing at least a repeating unit represented by the following formula (I) and at least either one repeating unit represented by the following formula (IIa) or (IIb), and also disclosed is a positive working photoresist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) an acid-decomposable polymer containing at least a repeating unit represented by the following formula (I) and at least either one repeating unit represented by the following formula (IIa) or (IIb), (C) at least one solvent capable of dissolving the components (A) and (B), (D) an organic basic compound and (E) at least one surfactant selected from fluorine-containing surfactants, silicon-containing surfactants and nonionic surfactants:
    • 公开了一种正性光致抗蚀剂组合物,其包含至少含有由下式(I)表示的重复单元和至少一种由下式(IIa)或(IIb)表示的重复单元的酸可分解聚合物,并且还公开 是一种正性光致抗蚀剂组合物,其包含(A)在用光化射线或辐射照射时能够产生酸的化合物,(B)至少含有由下式(I)表示的重复单元的酸可分解聚合物和至少 由下式(IIa)或(IIb)表示的一个重复单元,(C)至少一种能够溶解组分(A)和(B)的溶剂,(D)有机碱性化合物和(E) 一种选自含氟表面活性剂,含硅表面活性剂和非离子表面活性剂的表面活性剂:
    • 95. 发明授权
    • Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern using the same
    • 用于光致抗蚀剂的底部防反射涂料组合物和使用其形成抗蚀剂图案的方法
    • US06399269B2
    • 2002-06-04
    • US09397117
    • 1999-09-16
    • Kazuyoshi MizutaniMakoto Momota
    • Kazuyoshi MizutaniMakoto Momota
    • G03F709
    • G03F7/091
    • A bottom anti-reflective coating material composition for a photoresist comprising the following components (a) to (d): (a) a polymer containing a dye structure having a molar extinction coefficient of 1.0×104 or more to light including a wavelength used for exposure of the photoresist; (b) a thermal crosslinking agent which is activated by an acid to react with component (a) described above, thereby forming a crosslinked structure; (c) a sulfonic acid ester compound or diaryl iodonium salt, which is decomposed to generate an acid with heating at temperature between 150 to 200° C.; and (d) an organic solvent capable of dissolving components (a) to (c) described above. The bottom anti-reflective coating material composition for a photoresist provides a bottom anti-reflective coating having a large absorbance to light including a wavelength used for exposure, and an adverse effect due to a standing wave generated by reflection from a substrate can be reduced, a limiting resolution of the photoresist is increased, and a good resist profile is obtained. A method of forming a resist pattern using the composition is also disclosed.
    • 一种用于光致抗蚀剂的底部抗反射涂料组合物,其包含以下组分(a)至(d):(a)含有具有摩尔吸光系数为1.0×10 4或更高的染料结构的聚合物,其包含用于曝光的波长 的光致抗蚀剂;(b)由酸活化以与上述组分(a)反应的热交联剂,由此形成交联结构;(c)磺酸酯化合物或二芳基碘鎓盐,其分解成 在150〜200℃的温度下加热生成酸。 和(d)能够溶解上述组分(a)至(c)的有机溶剂。用于光致抗蚀剂的底部抗反射涂料组合物提供具有大的吸光度的底部抗反射涂层,其包括用于 曝光以及由于从基板反射产生的驻波产生的不利影响,可以降低光致抗蚀剂的极限分辨率,获得良好的抗蚀剂图。 还公开了使用该组合物形成抗蚀剂图案的方法。
    • 96. 发明授权
    • Composition for anti-reflective coating material
    • 防反射涂料的成分
    • US06248500B1
    • 2001-06-19
    • US09499703
    • 2000-02-07
    • Kazuyoshi MizutaniHiroshi Yoshimoto
    • Kazuyoshi MizutaniHiroshi Yoshimoto
    • G03F711
    • G03F7/091
    • A composition for anti-reflective coating material is disclosed, comprising a polymer compound having repeating units having specific structure, and optionally a melamine, guanamine, urea, phenol, naphthol or hydroxyanthracene compound substituted by at least one group selected from the group consisting of a methylol group and an alkoxymethyl group at two or more positions. The composition for anti-reflective coating material of the present invention is effective for the reduction of adverse effects of reflection by the substrate in a lithographic process using various radiations. A resist pattern formation process which comprises the use of the composition for anti-reflective coating material is also disclosed.
    • 公开了一种抗反射涂层材料的组合物,其包含具有特定结构的重复单元的高分子化合物,以及任选的三聚氰胺,胍胺,脲,苯酚,萘酚或羟基蒽化合物,被至少一种选自以下的基团所取代: 羟甲基和烷氧基甲基。 本发明的抗反射涂层材料的组合物对于在使用各种辐射的光刻工艺中减少基板反射的不利影响是有效的。 还公开了包括使用抗反射涂层材料用组合物的抗蚀图案形成方法。