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91. 发明申请

US20060170027A1 Nonvolatile memory device made of resistance material and method of fabricating the same 有权
标题翻译：由电阻材料制成的非易失性存储器件及其制造方法
公开(公告)号：US20060170027A1
公开(公告)日：2006-08-03
申请号：US11295551
申请日：2005-12-07
申请人： Jung-hyun Lee , Sung-kyu Choi , Kyu-sik Kim
发明人： Jung-hyun Lee , Sung-kyu Choi , Kyu-sik Kim
IPC分类号： H01L29/76
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1683
摘要： A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.
摘要翻译：提供了使用电阻材料的非易失性存储器件及其制造方法。非易失性存储器件包括开关元件和电连接到开关元件的数据存储部件。在数据存储部分中，下电极连接到开关元件，并且在下电极上形成预定厚度的绝缘层。绝缘层具有暴露下电极的接触孔。数据存储层填充在接触孔中，数据存储层由过渡金属氧化物形成。在绝缘层和数据存储层上形成上电极。

92. 发明申请

US20050078188A1 Method and apparatus for measuring signal quality using eye pattern 有权
标题翻译：使用眼图测量信号质量的方法和装置
公开(公告)号：US20050078188A1
公开(公告)日：2005-04-14
申请号：US10919531
申请日：2004-08-17
申请人： Eing-seob Cho , Jae-seong Shim , Hyun-soo Park , Jae-wook Lee , Jung-hyun Lee , Eun-Jin Ryu
发明人： Eing-seob Cho , Jae-seong Shim , Hyun-soo Park , Jae-wook Lee , Jung-hyun Lee , Eun-Jin Ryu
IPC分类号： G11B20/10 , G06F19/00 , H04L1/20
CPC分类号： H04L1/205
摘要： A signal quality measuring method and apparatus in which a quality of a signal detected from an RF signal read out from a disk or a communications channel is measured by using eye pattern signals of the detected RF signals. Eye pattern signals representing time change of a waveform of the detected signal are generated and a signal quality value is generated based on an eye depth and/or an eye width measured from the eye pattern signals. A histogram of the eye pattern signals is used to identify a plurality of main level values which are used as a reference value in measuring the signal quality. Accordingly, signal characteristics in a high-density storage medium system or communication system may be accurately represented.
摘要翻译：一种信号质量测量方法和装置，其中通过使用检测到的RF信号的眼图信号测量从从盘或通信信道读出的RF信号中检测到的信号的质量。产生表示检测信号的波形的时间变化的眼图信号，并且基于从眼图信号测量的眼睛深度和/或眼睛宽度来生成信号质量值。眼图信号的直方图用于识别在测量信号质量时用作参考值的多个主电平值。因此，可以精确地表示高密度存储介质系统或通信系统中的信号特性。

93. 发明申请

US20050042836A1 Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same 失效
标题翻译：半导体装置用电容器及其制造方法以及使用该半导体装置的电子装置
公开(公告)号：US20050042836A1
公开(公告)日：2005-02-24
申请号：US10930953
申请日：2004-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/06 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L21/20
CPC分类号： H01L28/56 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的可以保持薄介电层的特性。

94. 发明授权

US06752869B2 Atomic layer deposition using organometallic complex with &bgr;-diketone ligand 失效
标题翻译：使用有机金属络合物与β-二酮配体的原子层沉积
公开(公告)号：US06752869B2
公开(公告)日：2004-06-22
申请号：US10160111
申请日：2002-06-04
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C30B2504
CPC分类号： C23C16/45542 , C23C16/40 , C23C16/405 , C23C16/45553 , C23C16/5096
摘要： An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
摘要翻译：原子层沉积（ALD）方法，其中具有β-二酮配体的有机金属络合物被化学吸附到基底上并被活性氧自由基氧化以在基底上沉积原子金属氧化物层，使用使用等离子体产生的活性氧自由基，具有β-二酮配体作为前体的有机金属配合物，其不能用于使用氧或水作为氧化剂的热ALD方法，以解决和解决使用有机金属络合物除去有机物质的问题，二酮配体，从而使ALD前体多样化，并在低温下形成优异的氧化膜。

95. 发明授权

US08193569B2 Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same 有权
标题翻译：具有离子传导层的非易失性半导体存储器件及其制造和操作方法
公开(公告)号：US08193569B2
公开(公告)日：2012-06-05
申请号：US11508991
申请日：2006-08-24
申请人： Jung-hyun Lee
发明人： Jung-hyun Lee
IPC分类号： H01L29/76
CPC分类号： H01L45/145 , H01L27/24 , H01L45/04
摘要： A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.
摘要翻译：公开了具有离子传导层的非易失性半导体存储器件及其制造和操作方法。非易失性存储器件可以包括衬底，形成在衬底中的开关元件和连接到开关元件的存储节点，存储节点可以包括连接到开关元件的下电极，并用作离子源; 形成在所述下电极上的数据存储层，其一部分与所述下电极间隔开; 与所述下电极间隔开的侧电极，其侧表面与所述数据存储层的与所述下电极间隔开的部分连接; 以及形成在数据存储层上的上电极，或者可以包括连接到开关元件的下电极，并用作离子源; 和形成在下电极上的数据存储层; 形成在数据存储层上的上电极。

96. 发明授权

US08168469B2 Nonvolatile memory device made of resistance material and method of fabricating the same 有权
标题翻译：由电阻材料制成的非易失性存储器件及其制造方法
公开(公告)号：US08168469B2
公开(公告)日：2012-05-01
申请号：US12923429
申请日：2010-09-21
申请人： Jung-hyun Lee , Sung-kyu Choi , Kyu-sik Kim
发明人： Jung-hyun Lee , Sung-kyu Choi , Kyu-sik Kim
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1683
摘要： A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer.
摘要翻译：提供了使用电阻材料的非易失性存储器件及其制造方法。非易失性存储器件包括开关元件和电连接到开关元件的数据存储部件。在数据存储部分中，下电极连接到开关元件，并且在下电极上形成预定厚度的绝缘层。绝缘层具有暴露下电极的接触孔。数据存储层填充在接触孔中，数据存储层由过渡金属氧化物形成。在绝缘层和数据存储层上形成上电极。

97. 发明授权

US08143660B2 Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same 失效
标题翻译：具有高介电常数的氧化膜的制造方法，使用该方法形成的电介质膜的电容器及其制造方法
公开(公告)号：US08143660B2
公开(公告)日：2012-03-27
申请号：US10797046
申请日：2004-03-11
申请人： Jung-hyun Lee , Burn-seok Seo , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Burn-seok Seo , Yo-sep Min , Young-jin Cho
IPC分类号： H01L27/108
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45525 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/022 , H01L21/02205 , H01L21/02304 , H01L21/3142 , H01L21/31616 , H01L21/31645
摘要： Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density. Thus, a capacitor including the high k-dielectric oxide film as a dielectric film also exhibits low leakage current and trap density.
摘要翻译：提供一种制造高k电介质氧化膜的方法，具有使用该方法形成的电介质膜的电容器和制造该电容器的方法。（a）在ALD装置中加载半导体衬底，（b）在半导体衬底上沉积具有第一元素和第二元素的预定组成比的反应材料，制备高k电介质氧化物膜，和（c ）通过氧化反应材料形成具有两个元件的第一高k电介质氧化物膜，以使第一元件和第二元件同时被氧化。在该方法中，装置的尺寸减小，生产率提高，制造成本降低。此外，高k电介质氧化膜表现出高的介电常数和低的漏电流和阱密度。因此，包括作为电介质膜的高k电介质氧化膜的电容器也具有低泄漏电流和阱密度。

98. 发明授权

US07985961B2 Resistive random access memory device 失效
标题翻译：电阻随机存取存储器件
公开(公告)号：US07985961B2
公开(公告)日：2011-07-26
申请号：US12003133
申请日：2007-12-20
申请人： Sang-jun Choi , Jung-hyun Lee , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Chang-soo Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/2436 , H01L45/04 , H01L45/142 , H01L45/144 , H01L45/1675
摘要： Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.
摘要翻译：示例性实施例可以提供电阻性随机存取存储器件和/或制造电阻随机存取存储器件的方法。示例性实施例电阻随机存取存储器设备可以包括连接到交换设备的交换设备和/或存储节点。存储节点可以包括堆叠结构，其包括彼此分离的多个电阻变化层以及每个在堆叠结构的侧壁上的第一和第二电极。电阻变化层可以并联连接到第一和第二电极和/或可以具有彼此不同的开关电压。

99. 发明申请

US20110162698A1 Solar cells using nanowires and methods of manufacturing the same 审中-公开
标题翻译：使用纳米线的太阳能电池及其制造方法
公开(公告)号：US20110162698A1
公开(公告)日：2011-07-07
申请号：US12926125
申请日：2010-10-27
申请人： Xianyu Wenxu , Yeon-hee Kim , Jung-hyun Lee
发明人： Xianyu Wenxu , Yeon-hee Kim , Jung-hyun Lee
IPC分类号： H01L31/0256 , H01L31/18 , H01L31/0224 , B82Y30/00
CPC分类号： B82Y30/00 , H01L31/035227 , H01L31/03529 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Solar cells and methods of manufacturing the same, the solar cells include a plurality of nanowire heterostructures, wherein each of the plurality of nanowire heterostructures includes a nanowire including at least one p-type nanowire layer and at least one n-type nanowire layer, and a semiconductor material layer disposed on the nanowire. The semiconductor material layer constitutes a p-n junction with the p-type or n-type nanowire layer. The semiconductor material layer includes at least one of the p-type material layer and the n-type material layer.
摘要翻译：太阳能电池及其制造方法，太阳能电池包括多个纳米线异质结构，其中，所述多个纳米线异质结构中的每一个都包括包含至少一个p型纳米线层和至少一个n型纳米线层的纳米线，以及设置在纳米线上的半导体材料层。半导体材料层与p型或n型纳米线层构成p-n结。半导体材料层包括p型材料层和n型材料层中的至少一种。

100. 发明授权

US07952974B2 Apparatus and method for measuring signal quality 有权
标题翻译：用于测量信号质量的装置和方法
公开(公告)号：US07952974B2
公开(公告)日：2011-05-31
申请号：US12833793
申请日：2010-07-09
申请人： Hyun-soo Park , Jae-seong Shim , Jae-wook Lee , Jung-hyun Lee , Eun-jin Ryu , Eing-seob Cho
发明人： Hyun-soo Park , Jae-seong Shim , Jae-wook Lee , Jung-hyun Lee , Eun-jin Ryu , Eing-seob Cho
IPC分类号： G11B7/00
CPC分类号： G11B20/10009 , G11B20/10203 , G11B20/10296 , G11B20/10333
摘要： An apparatus and method for measuring the quality of a signal on an optical disc based on level information of a viterbi decoder are provided. The signal quality measuring apparatus includes: a binary unit that generates binary signals from input RF signals; a channel identifier that receives the input RF signals and the binary signals output from the binary unit and outputs reference level values corresponding to the binary signals; and an information calculator that receives the reference level values and detects a signal quality value.
摘要翻译：提供了一种基于维特比解码器的电平信息来测量光盘上的信号质量的装置和方法。信号质量测量装置包括：二进制单元，其从输入的RF信号产生二进制信号; 接收从二进制单元输出的输入RF信号和二进制信号并输出对应于二进制信号的参考电平值的信道标识符; 以及信息计算器，其接收参考电平值并检测信号质量值。

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