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91. 发明申请

US20060281017A1 Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
标题翻译：用于EUV光刻的反射掩模和制造反射掩模的方法
公开(公告)号：US20060281017A1
公开(公告)日：2006-12-14
申请号：US11441835
申请日：2006-05-26
申请人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
发明人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
IPC分类号： G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要翻译：一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料，在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉反射层和来自下反射层的反射光。可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。

92. 发明授权

US07719871B2 Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same 有权
标题翻译：逻辑器件和半导体器件的操作和制造方法包括互补的非易失性存储器件和用于其的读取电路
公开(公告)号：US07719871B2
公开(公告)日：2010-05-18
申请号：US12025372
申请日：2008-02-04
申请人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
发明人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
IPC分类号： G11C5/06
CPC分类号： G11C11/5621 , H01L27/0688 , H01L27/11521 , H01L27/11551
摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
摘要翻译：提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。第一和第二非易失性存储器被布置成使得其上表面相邻。

93. 发明申请

US20090206978A1 Electrical fuse device including a fuse link 审中-公开
标题翻译：电熔丝装置包括熔断体
公开(公告)号：US20090206978A1
公开(公告)日：2009-08-20
申请号：US12379347
申请日：2009-02-19
申请人： Soo-Jung Hwang , Deok-kee Kim , Jung-hun Sung , I-hun Song , Hyuk-soon Choi
发明人： Soo-Jung Hwang , Deok-kee Kim , Jung-hun Sung , I-hun Song , Hyuk-soon Choi
IPC分类号： H01H85/10
CPC分类号： G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments relate to an electrical device, for example, to an electrical fuse device that includes a fuse link for linking a cathode and anode. An electrical device may include a cathode, an anode, and a fuse link. The fuse link may link the cathode and the anode. The fuse link may include a multi-metal layer structure. The fuse link may include a first metal layer including a first resistance, and a second metal layer stacked on the first metal layer and including a second resistance. The first resistance may be different from the second resistance. The fuse link may include a weak point as a region at which electrical blowing is performed easier than other regions of the fuse link.
摘要翻译：示例性实施例涉及电气设备，例如电气熔断器件，其包括用于连接阴极和阳极的熔断体。电气设备可以包括阴极，阳极和熔断体。熔丝链可以连接阴极和阳极。熔丝链可以包括多金属层结构。熔丝连接件可以包括第一金属层和第二金属层，第一金属层包括第一电阻，第二金属层堆叠在第一金属层上并包括第二电阻。第一阻力可能与第二阻力不同。熔断体可以包括作为进行电吹送的区域的弱点比熔丝链的其它区域更容易。

94. 发明申请

US20080212376A1 METHODS OF OPERATING AND MANUFACTURING LOGIC DEVICE AND SEMICONDUCTOR DEVICE INCLUDING COMPLEMENTARY NONVOLATILE MEMORY DEVICE, AND READING CIRCUIT FOR THE SAME 有权
标题翻译：操作和制造逻辑器件和包括补充非易失性存储器件的半导体器件的方法及其读取电路
公开(公告)号：US20080212376A1
公开(公告)日：2008-09-04
申请号：US12025372
申请日：2008-02-04
申请人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
发明人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
IPC分类号： G11C16/06 , H01L21/336 , G11C7/00
CPC分类号： G11C11/5621 , H01L27/0688 , H01L27/11521 , H01L27/11551
摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
摘要翻译：提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。第一和第二非易失性存储器被布置成使得其上表面相邻。

95. 发明申请

US20070051999A1 Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same 失效
标题翻译：具有三维结构的铁电电容器，具有相同的非易失性存储器件及其制造方法
公开(公告)号：US20070051999A1
公开(公告)日：2007-03-08
申请号：US11515024
申请日：2006-09-05
申请人： Sang-min Shin , Young-soo Park , June-mo Koo , Byoung-jae Bae , I-hun Song , Suk-pil Kim
发明人： Sang-min Shin , Young-soo Park , June-mo Koo , Byoung-jae Bae , I-hun Song , Suk-pil Kim
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.
摘要翻译：提供具有三维结构的铁电电容器，具有其的非易失性存储器件及其制造方法。铁电电容器可以包括沟槽型下电极，形成在下电极周围的至少一层，形成在下电极和至少一层上的铁电层（PZT层）和形成在铁电层上的上电极。所述至少一个层可以是至少一个绝缘中间层，并且所述至少一个层也可以是至少一个扩散阻挡层。至少一层可以由除SiO 2之外的绝缘材料形成，或者可以具有不包括Pb的钙钛矿晶体结构。

96. 发明申请

US20060208294A1 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US20060208294A1
公开(公告)日：2006-09-21
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

97. 发明授权

US06884731B2 Method for forming magnetic tunneling junction layer for magnetic random access memory 有权
标题翻译：磁性随机存取存储器磁隧道结层形成方法
公开(公告)号：US06884731B2
公开(公告)日：2005-04-26
申请号：US10765279
申请日：2004-01-28
申请人： Soon-won Hwang , I-hun Song , Tae-wan Kim
发明人： Soon-won Hwang , I-hun Song , Tae-wan Kim
IPC分类号： H01L21/3065 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/302 , H01L21/336 , H01L21/461 , H01L21/70 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/12
摘要： A method of forming a magnetic tunneling junction (MTJ) layer for an MRAM includes sequentially forming a lower material layer, an insulation layer, and an upper material layer on a substrate, forming a mask pattern on a predetermined region of the upper material layer, sequentially removing the upper material layer, the insulation layer, and the lower material layer from around the mask pattern using plasma generated from an etching gas, wherein the etching gas is a mixture of a main gas and an additive gas having a predetermined mixture ratio and including no chlorine (Cl2) gas, and removing the mask pattern. Accordingly, an MTJ layer formed by the method may incur no thermal damage due to high temperature etching, no material deposits due to by-products of etching, and no step difference or corrosion due to chlorine gas, and may have an excellent profile.
摘要翻译：形成用于MRAM的磁隧道结（MTJ）层的方法包括：在衬底上依次形成下层材料层，绝缘层和上层材料层，在上层材料层的预定区域上形成掩模图案，使用从蚀刻气体产生的等离子体从掩模图案周围顺序地去除上部材料层，绝缘层和下部材料层，其中，蚀刻气体是主要气体和具有预定混合比的添加剂气体的混合物，包括没有氯（Cl 2/2））气体，并且去除掩模图案。因此，通过该方法形成的MTJ层可能不会由于高温蚀刻而导致热损伤，由于蚀刻的副产物而没有材料沉积，并且没有由于氯气导致的阶梯差或腐蚀，并且可能具有优异的外形。

98. 发明授权

US06781871B2 Magnetic random access memory and method of operating the same 有权
标题翻译：磁性随机存取存储器及其操作方法
公开(公告)号：US06781871B2
公开(公告)日：2004-08-24
申请号：US10316844
申请日：2002-12-12
申请人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
发明人： Wan-jun Park , Tae-wan Kim , I-hun Song , Sang-jin Park , Richard J. Gambino
IPC分类号： G11C1100
CPC分类号： G11C19/0808 , G11C11/15 , G11C11/16
摘要： A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
摘要翻译：一种使用磁畴阻力和巨磁阻（GMR）或隧道磁阻（TMR）的磁性随机存取存储器及其操作方法，其中磁性随机存取存储器包括数据存储单元，其包括固定层，非磁性层和具有两端的自由层; 电连接到自由层的两端的数据输入装置，用于向自由层施加电流以将数据输入数据存储单元; 以及电连接到所述自由层和所述固定层的数据输出装置，以输出存储在所述数据存储单元中的数据。因此，根据本发明的磁性随机存取存储器具有比使用切换字段来记录数据的磁性随机存取存储器更好的性能。

99. 发明授权

US07897412B2 Method of manufacturing magnetic random access memory including middle oxide layer 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器的制造方法
公开(公告)号：US07897412B2
公开(公告)日：2011-03-01
申请号：US11438211
申请日：2006-05-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

100. 发明授权

US07682758B2 Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
标题翻译：用于EUV光刻的反射掩模和制造反射掩模的方法
公开(公告)号：US07682758B2
公开(公告)日：2010-03-23
申请号：US11441835
申请日：2006-05-26
申请人： Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang , Hoon Kim
发明人： Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang , Hoon Kim
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要翻译：一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料，在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉反射层和来自下反射层的反射光。可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。

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