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    • 92. 发明授权
    • Hydraulic saildrive apparatus
    • 液压帆船装置
    • US07896716B2
    • 2011-03-01
    • US12073475
    • 2008-03-06
    • Toshio ImanakaOsamu Matsumoto
    • Toshio ImanakaOsamu Matsumoto
    • B63H20/14
    • B63H23/26B63H23/30
    • The subject invention provides a hydraulic saildrive apparatus comprising an upper unit 103 having an input shaft 1 connected to an engine 102 inside a boat, and a lower unit 104 having an output shaft 4 including a propeller shaft 2 and also having a lower portion protruding from the boat's bottom, wherein the upper unit 103 is provided with a hydraulic forward and reverse switching clutch 5 for transmitting the rotation direction of the input shaft 1 to the propeller shaft 2, the clutch 5 being capable of changing the rotation direction between forward and reverse relative to the input shaft 1.
    • 本发明提供了一种液压驱动装置,其包括具有连接到船内的发动机102的输入轴1的上部单元103和具有包括传动轴2的输出轴4的下部单元104,并且还具有从下部突出的下部 船底部,其中上部单元103设置有用于将输入轴1的旋转方向传递到传动轴2的液压正向和反向切换离合器5,离合器5能够改变正向和反向之间的旋转方向 相对于输入轴1。
    • 97. 发明申请
    • Search processing method and apparatus
    • 搜索处理方法和装置
    • US20070282808A1
    • 2007-12-06
    • US11517368
    • 2006-09-08
    • Masaki HashiranoOsamu Matsumoto
    • Masaki HashiranoOsamu Matsumoto
    • G06F17/30
    • G06F16/2455
    • This invention is provided to reduce a processing volume when extracting record sequences meeting the ordered plural search conditions. This invention includes: assigning a flag for each item value of a specific item based on a search instruction including plural ordered search conditions, wherein each search condition designates a specific value for the specific item, and storing the flags as flag definition data; sorting plural records to be searched; identifying a flag corresponding to an item value of the specific item in each record to be processing in order of the plural sorted records, by using the flag definition data; in a process of the identifying the flag in the order of the plural sorted records, judging whether an appearance mode of the identified flags follows the search instruction; and outputting data of records relating to the flags included in the appearance mode of the flags, which was judged to follow the search instruction.
    • 提供本发明以在提取满足有序多个搜索条件的记录序列时减少处理量。 本发明包括:基于包括多个有序搜索条件的搜索指令为特定项目的每个项目值分配标志,其中每个搜索条件指定特定项目的特定值,并将该标志存储为标志定义数据; 排序要搜索的多个记录; 通过使用标志定义数据,识别与要处理的多个分类记录中的每个记录中的特定项目的项目值相对应的标志; 在以所述多个分类记录的顺序识别所述标志的处理中,判断所识别标志的出现模式是否跟随所述搜索指令; 并且输出与被判定为跟随搜索指令的标志的出现模式中包括的标志有关的记录数据。
    • 100. 发明申请
    • Gan semiconductor device
    • 甘半导体器件
    • US20060097278A1
    • 2006-05-11
    • US10517877
    • 2003-06-19
    • Osamu GotoOsamu MatsumotoTomomi SasakiMasao Ikeda
    • Osamu GotoOsamu MatsumotoTomomi SasakiMasao Ikeda
    • H01L33/00
    • H01S5/0207H01S5/0014H01S5/0422H01S5/2201H01S5/32341
    • Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
    • 提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。 作为GaN系半导体发光元件的一例,公开了GaN系半导体激光元件(50),是具有p侧电极和n侧电极的结构的半导体激光元件 在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件(50)的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似,除了使用GaN单晶衬底(52)代替蓝宝石衬底,并且 多层结构直接形成在GaN单晶衬底(52)上,而不提供GaN-ELO结构层。 GaN单晶衬底(52)具有宽度为10μm的连续的带状芯部(52a)。 这些芯部分(52a)彼此隔开约400μm的距离。 激光条纹(30),用于p侧电极(36)的焊盘金属(37)和n侧电极(38)设置在除了芯部(52a)的芯部 GaN单晶衬底(52)。 焊垫金属(37)与与其相邻的芯部(52a)之间的水平距离Sp为95μm,n侧电极(38)与与其相邻的芯部(52a)之间的水平距离Sn为 也是95妈妈。