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    • 94. 发明授权
    • Semiconductor exposure device
    • 半导体曝光装置
    • US5791767A
    • 1998-08-11
    • US417591
    • 1995-04-07
    • Osamu InoueKiyotada NakamuraTakashi MoriTetsuo Kikuchi
    • Osamu InoueKiyotada NakamuraTakashi MoriTetsuo Kikuchi
    • G03F7/20F21V23/00
    • G03F7/70058G03F7/70575H01J61/86
    • A semiconductor exposure device having excellent throughput using a mercury lamp as an exposure light source. The mercury lamp is capable of providing an efficient i-ray output, with a small i-ray half width value, allowing correction of chromatic aberration. The semiconductor exposure device is further provided with an illumination optical system for illuminating a target surface and a projection optical system for projecting the image on the target surface. The illumination optical system is provided with the mercury lamp, an optical integrator, an optical system for guiding a flux of light emitted from the mercury lamp to the optical integrator and a condenser lens for converging the light from the optical integrator. The semiconductor exposure device is provided with a power source and an associated control circuit for supplying an electric current to the mercury lamp. The power source is configured to allow the mercury lamp to have an average electric field E satisfying the following relational expression with respect to the lamp input power W.sub.L (W), provided that the value obtained by deducting 11 V from the lamp voltage V.sub.L (V) of the mercury lamp and dividing the difference by the electrode-to-electrode distance d (mm) is the average electric field E (=V.sub.L -11/d) (V/mm): E.sub.p (W.sub.L)-1.0 V/mm.ltoreq.E.ltoreq.E.sub.p (W.sub.L)+1.5 V/mm, wherein E.sub.p (W.sub.L)=a+bW.sub.L ; E.ltoreq.6 V/mm; a and b are constants (a=1.4 V/mm, b=0.71.times.10.sup.-3 V/mm.multidot.W).
    • 一种半导体曝光装置,其使用汞灯作为曝光光源具有优异的生产能力。 汞灯能够提供高效的i射线输出,具有小的i射线半值值,允许校正色差。 半导体曝光装置还设置有用于照射目标表面的照明光学系统和用于将图像投影在目标表面上的投影光学系统。 照明光学系统设置有水银灯,光学积分器,用于将从汞灯发射的光束的光束引导到光学积分器的光学系统和用于会聚来自光学积分器的光的聚光透镜。 半导体曝光装置设置有用于向汞灯供应电流的电源和相关联的控制电路。 电源被配置为允许汞灯具有相对于灯输入功率WL(W)满足以下关系式的平均电场E,条件是通过从灯电压VL(V)中减去11V获得的值 )的平均电场E(= VL-11 / d)(V / mm):Ep(WL)-1.0V / mm (WL)+1.5V / mm,其中Ep(WL)= a + bWL; E
    • 96. 发明授权
    • Imaging apparatus with CCD holders
    • 具有CCD支架的成像设备
    • US5627589A
    • 1997-05-06
    • US602265
    • 1996-02-20
    • Satoshi EjimaOsamu Inoue
    • Satoshi EjimaOsamu Inoue
    • G02B7/00H04N5/225H04N5/335H04N5/372
    • H04N5/2253
    • An imaging apparatus comprising imaging devices for converting the light of a subject into electric signals, an image forming device for forming an image of the light of the subject on the imaging devices and a connecting device for connecting the image forming device to the imaging devices. In the imaging apparatus, the connecting device has at least three pins so inserted in holes bored in either the imaging devices or the image forming device as to be vertically movable and a biasing device for making the pins contact with a confronting surface of the image device or the image forming device. Heads of the pins are formed in configuration adaptive to point-contact with the confronting surface. The hole is bonded to the pin, and the pin is bonded to the confronting surface, respectively.
    • 一种成像设备,包括用于将被摄体的光转换成电信号的成像设备,用于在成像设备上形成被摄体的光的图像的图像形成设备以及用于将图像形成设备连接到成像设备的连接设备。 在成像装置中,连接装置具有插入到成像装置或图像形成装置中的任何一个可垂直移动的孔中的至少三个销,以及用于使销与图像装置的相对表面接触的偏压装置 或图像形成装置。 销的头部形成为适应于与相对表面的点接触的配置。 孔结合到销,并且销分别结合到相对表面。
    • 97. 发明授权
    • Oxide magnetic material
    • 氧化物磁性材料
    • US5518642A
    • 1996-05-21
    • US314546
    • 1994-09-28
    • Osamu InoueNobuya MatsutaniKoichi KugimiyaOsamu IshiiYasuyuki Aono
    • Osamu InoueNobuya MatsutaniKoichi KugimiyaOsamu IshiiYasuyuki Aono
    • C04B35/26C04B35/38
    • C04B35/2658
    • An oxide magnetic material provided by the present invention contains, as main components, 55 to 59 mol % of Fe.sub.2 O.sub.3 ; 35 to 42 mol % of MnO; and 6 mol % or less of ZnO, and further contains, as sub-components, 0.05 to 0.3 wt % of CaO; and 0.005 to 0.05 wt % of SiO.sub.2. The other oxide magnetic material provided by the present invention contains, as main components, 61 to 67 mol % of Fe.sub.2 O.sub.3 ; 3 to 36 mol % of MnO; and 30 mol % or less of ZnO, and further contains, as sub-components, 0.05 to 0.5 wt % of CaO; and 0.005 to 0.2 wt % of SiO.sub.2. Such materials can further contain one or more kinds of oxides selected from the group consisting of ZrO.sub.2, HfO.sub.2, Ta.sub.2 O.sub.5, Cr.sub.2 O.sub.3, MoO.sub.3, WO.sub.3, Al.sub.2 O.sub.3, Ga.sub.2 O.sub.3, In.sub.2 O.sub.3, GeO.sub.2, SnO.sub.2, Sb.sub.2 O.sub.3 and Bi.sub.2 O.sub.3. Such magnetic materials of the present invention have the advantages of having an extremely low magnetic loss even when used in the high frequency band and having a minimum magnetic loss at a temperature sufficiently higher than room temperature. Moreover, a switching power supply having a switching frequency of 300 kHz to 5 MHz is provided by using such magnetic materials as a magnetic core.
    • 本发明提供的氧化物磁性材料含有55〜59摩尔%的Fe 2 O 3作为主要成分; 35〜42mol%的MnO; 和6mol%以下的ZnO,作为副成分,进一步含有0.05〜0.3重量%的CaO; 和0.005〜0.05重量%的SiO 2。 本发明提供的其它氧化物磁性材料以Fe 2 O 3为主要成分为61〜67摩尔%。 3〜36摩尔%的MnO; 和30摩尔%以下的ZnO,作为副成分,进一步含有0.05〜0.5重量%的CaO; 和0.005〜0.2重量%的SiO 2。 这些材料可以进一步含有选自ZrO 2,HfO 2,Ta 2 O 5,Cr 2 O 3,MoO 3,WO 3,Al 2 O 3,Ga 2 O 3,In 2 O 3,GeO 2,SnO 2,Sb 2 O 3和Bi 2 O 3中的一种以上的氧化物。 本发明的这种磁性材料具有即使在高频带下使用也具有非常低的磁损耗并且在足够高于室温的温度下具有最小的磁损耗的优点。 此外,通过使用这种磁性材料作为磁芯,提供具有300kHz至5MHz的开关频率的开关电源。