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91. 发明公开

EP2359668A2 OPTOELEKTRONISCHE VORRICHTUNG 有权
公开(公告)号：EP2359668A2
公开(公告)日：2011-08-24
申请号：EP09774905.5
申请日：2009-12-14
申请人： Osram Opto Semiconductors Gmbh
发明人： WIRTH, Ralph , KLEIN, Markus
IPC分类号： H05B33/08
CPC分类号： H05B33/0869 , H05B33/0872
摘要： The invention relates to an optoelectronic device for radiating mixed light in a first wavelength range and a second wavelength range different from the first wavelength range, comprising a first or second semiconductor light source (1, 2) having a first or second light-emitting diode (11, 21), which radiates light having a first or second characteristic wavelength in the first or second wavelength range and having a first or second intensity when a first or second current (41, 42) is applied, an optical sensor (3) for converting a part (110, 510) of the respective radiated light from the semiconductor light sources (1, 2) into a first or second sensor signal (341, 342), and a control device (4) for controlling the first and second currents (41, 42) according to the first and second sensor signals (341, 342), wherein the characteristic wavelengths and intensities of the respective light radiated by the first and second semiconductor light sources (1, 2) have a first temperature- and/or current- and/or aging-dependence or second temperature- and/or current- and/or aging dependence (931, 932, 941, 942) different from the first temperature- and/or current- and/or aging-dependence, the optical sensor (3) has a first or second wavelength-dependent sensitivity in the first or second wavelength range, wherein said first and second wavelength-dependent sensitivities are adapted to the first and second temperature dependences (931, 932, 941, 942), and the control device (4) controls the first and second currents (41, 42) in such a way that there is a predetermined ratio of the first to the second sensor signal (341, 342).
摘要翻译：本发明涉及一种用于辐射第一波长范围和不同于第一波长范围的第二波长范围的混合光的光电子器件，包括：第一或第二半导体光源（1,2），其具有第一或第二发光二极管（11,21），其在施加第一或第二电流（41,42）时发射具有第一或第二波长范围中的第一或第二特征波长的光并具有第一或第二强度，光学传感器（3），用于将来自半导体光源（1,2）的相应辐射光的一部分（110,510）转换成第一或第二传感器信号（341,342）;以及控制装置（4），用于控制第一和第二根据所述第一传感器信号和所述第二传感器信号（341,342）产生电流（41,42），其中由所述第一半导体光源（1）和所述第二半导体光源（2）辐射的各个光的特征波长和强度具有第一温度，并且 /要么电流和/或老化依赖性或与第一温度和/或电流和/或老化依赖性不同的第二温度和/或电流和/或老化依赖性（931,932,941,942），所述光学传感器（3）在第一或第二波长范围内具有第一或第二波长相关灵敏度，其中所述第一和第二波长相关灵敏度适应于第一和第二温度相关性（931,932,941,942），并且控制装置（4）以这样的方式控制第一和第二电流（41,42），使得存在第一和第二传感器信号（341,342）的预定比率。

92. 发明公开

EP2316130A2 OPTOELEKTRONISCHES BAUELEMENT 审中-公开
标题翻译：光电组件
公开(公告)号：EP2316130A2
公开(公告)日：2011-05-04
申请号：EP09798867.9
申请日：2009-11-02
申请人： OSRAM Opto Semiconductors GmbH
发明人： WIRTH, Ralph
IPC分类号： H01L25/075 , H01L33/00
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/50 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The invention relates to an optoelectronic component (1) comprising a connection support (2), on which at least two radiation-emitting semiconductor chips (3) are located and a conversion element (4) that is fixed to the connection support (2), said conversion element (4) spanning the semiconductor chips (3) in such a way that the chips (3) are surrounded by the conversion element (4) and the connection support (2). At least two of the radiation-emitting semiconductor chips (3) differ from one another with respect to the wavelengths of the electromagnetic radiation that they emit during operation.

93. 发明公开

EP2149163A1 LUMINESZENZDIODENCHIP MIT WINKELFILTERELEMENT 有权
公开(公告)号：EP2149163A1
公开(公告)日：2010-02-03
申请号：EP08758109.6
申请日：2008-05-21
申请人： OSRAM Opto Semiconductors GmbH
发明人： STREUBEL, Klaus , WIRTH, Ralph
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/22 , H01L33/44 , H01L33/46
摘要： The invention relates to a luminescence diode chip comprising a semiconductor body (1) producing radiation having a first wavelength, a luminescence conversion element (5) that produces radiation having a second wavelength from the radiation having the first wavelength, and an angle filter element (4) that reflects radiation that impacts said angle filter element at a particular angle relative to a primary emission direction back in the direction of the semiconductor body.
摘要翻译：发光二极管芯片包括产生第一波长的辐射的半导体本体。发光转换元件从第一波长的辐射产生第二波长的辐射。角度滤波器元件以相对于半导体主体的方向的主发射方向以特定角度反射照射在角度滤波器元件上的辐射。

94. 发明公开

EP2067178A1 LED-HALBLEITERKÖRPER UND VERWENDUNG EINES LED-HALBLEITERKÖRPERS 审中-公开
标题翻译： LED-HALBLEITERKÖRPERUND VERWENDUNG EINES LED-HALBLEITERKÖRPERS
公开(公告)号：EP2067178A1
公开(公告)日：2009-06-10
申请号：EP07817458.8
申请日：2007-08-28
申请人： OSRAM Opto Semiconductors GmbH
发明人： HEIDBORN, Peter , WINDISCH, Reiner , WIRTH, Ralph
IPC分类号： H01L33/00 , H01L25/075
CPC分类号： H01L25/0756 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked on top of the first active layer in a vertical direction and is serially connected to the first active layer. The first active layer and the second active layer are connected in an electrically conducting manner by means of a contact zone. The invention further relates to different uses of said LED semiconductor element.
摘要翻译：本发明涉及一种LED半导体元件，其包括至少一个第一辐射产生活性层和至少一个第二辐射产生活性层，所述第二辐射产生活性层在垂直方向上堆叠在第一活性层的顶部上并且串联连接到第一活性层层。第一有源层和第二有源层借助于接触区以导电的方式连接。本发明还涉及所述LED半导体元件的不同用途。

95. 发明公开

EP2062296A1 LED-HALBLEITERKÖRPER UND VERWENDUNG EINES LED-HALBLEITERKÖRPERS 有权
标题翻译： LED-HALBLEITERKÖRPERUND VERWENDUNG EINES LED-HALBLEITERKÖRPERS
公开(公告)号：EP2062296A1
公开(公告)日：2009-05-27
申请号：EP07817544.5
申请日：2007-09-19
申请人： OSRAM Opto Semiconductors GmbH
发明人： WINDISCH, Reiner , WIRTH, Ralph , GRÖTSCH, Stefan , BOGNER, Georg , KIRCHBERGER, Günter , STREUBEL, Klaus
IPC分类号： H01L25/16 , H01L27/15 , H01L33/00
CPC分类号： H01L27/15 , H01L24/24 , H01L25/0756 , H01L25/167 , H01L33/08 , H01L2224/32145 , H01L2924/0002 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： The invention relates to an LED semiconductor body (1) comprising at least two radiation-generating active layers (2, 3) which each have a forward voltage (ULED). The number of active layers is adapted to an operating voltage (UB) in such a way that the maximum voltage (UW) falling on a series resistor (10) mounted in series in relation to the active layers (2, 3) is no higher than a voltage (UH) falling on the LED semiconductor body (1). The invention also relates to different uses of the LED semiconductor body.
摘要翻译：本发明涉及包括至少两个辐射生成有源层（2,3）的LED半导体本体（1），每个辐射生成有源层均具有正向电压（ULED）。有源层的数量以这样的方式适应于工作电压（UB），使得相对于有源层（2,3）串联安装的串联电阻器（10）上的最大电压（UW）不高于比落在LED半导体本体（1）上的电压（UH）低。本发明还涉及LED半导体本体的不同用途。

96. 发明公开

EP1749317A1 VERFAHREN ZUR HERSTELLUNG EINES BEREICHS MIT REDUZIERTER ELEKTRISCHER LEITFÄHIGKEIT INNERHALB EINER HALBLEITERSCHICHT UND OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 有权转让
标题翻译：方法生产具有减少的电导的区域内的半导体层和光电半导体器件
公开(公告)号：EP1749317A1
公开(公告)日：2007-02-07
申请号：EP05747600.4
申请日：2005-04-25
申请人： Osram Opto Semiconductors GmbH
发明人： ILLEK, Stefan , STEIN, Wilhelm , WALTER, Robert , WIRTH, Ralph
IPC分类号： H01L33/00 , H01L21/363 , H01L21/24
CPC分类号： H01L21/02461 , H01L21/02463 , H01L21/02554 , H01L21/02573 , H01L21/02631 , H01L21/7605 , H01L33/0062 , H01L33/42
摘要： The invention relates to a method for producing at least one area (8) having reduced electrical conductivity within an electrically conducting III-V semiconductor layer (3). The inventive method is characterized in that a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and is then preferably annealed at a temperature ranging from 300 °C to 500 °C. The ZnO layer (1) is preferably deposited onto the III-V semiconductor layer (3) at a temperature of less than 150 °C, preferably between and including 25 °C and including 120 °C. The area (8) having reduced electrical conductivity is preferably disposed in a radiation-emitting optoelectronic component between the active zone (4) and a connecting contact (7), thereby reducing current injection into the areas of the active zone (4) opposite the connecting contact (7).
摘要翻译：在用于在导电III-V族半导体层（3），ZnO层内具有减小的导电率产生至少至少一个区域（8）的方法（1）被施加到区域（8）的半导体层（ 3），随后在优选300℃和500℃下的氧化锌层（1的温度下退火）在低于150℃的温度下的III-V族半导体层（3）上优选沉积，优选在温度大于或等于25℃且小于或等于120℃具有降低的电导率优选地位于一个辐射发射有源区之间光电子装置的区域（8）（4）和连接为了（7）接触，以降低电流注入到位于相对于连接（7）接触的有源区（4）的区域。

97. 发明公开

EP1579511A1 VERFAHREN ZUM AUFRAUHEN EINER OBERFLÄCHE EINES KÖRPERS UND OPTOELEKTRONISCHES BAUELEMENT 有权转让
标题翻译：粗糙的光电子半导体本体的表面的方法。
公开(公告)号：EP1579511A1
公开(公告)日：2005-09-28
申请号：EP03795768.5
申请日：2003-12-18
申请人： Osram Opto Semiconductors GmbH
发明人： WINDISCH, Reiner , WIRTH, Ralph , ZULL, Heribert
IPC分类号： H01L33/00 , G03F7/00 , H01L21/311
CPC分类号： H01L33/22 , H01L21/0337 , H01L21/3081 , H01L21/3086
摘要： The invention relates to a method for roughening a surface of a body (1), comprising the following steps: coating the surface with a mask layer (2); applying pre-shaped mask bodies (3) to the mask layer (2); etching though the mask layer at locations that are not covered by mask bodies (3), and; etching the body (1) at locations of its surface that are not covered by the mask layer (2). The invention also relates to an optoelectronic component. By using the mask layer (2) as an additional auxiliary mask, methods having a low selectivity with regard to polystyrene balls can be used for etching.

98. 发明公开

EP1295348A1 LED MIT AUSKOPPELSTRUKTUR 审中-公开
标题翻译： LED与分离结构
公开(公告)号：EP1295348A1
公开(公告)日：2003-03-26
申请号：EP01943139.4
申请日：2001-05-23
申请人： Osram Opto Semiconductors GmbH
发明人： LINDER, Norbert , WIRTH, Ralph , ZULL, Heribert
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20
摘要： According to the invention, a textured coupling-out layer (6) with flanks (16) is located on an upper surface. Said flanks are aligned at an angle of between 60° and 88° in relation to the layer plane and form the boundaries of the coupling-out regions that are offset in relation to one another and are provided for emitting the radiation. The portions of the coupling-out layer that are located in the coupling-out regions can take the form of flat truncated cones and their flanks can be fluted or serrated, in order to increase the probability that the generated radiation strikes the external limiting surface of the coupling-out layer at a steeper angle than the critical angle of the total internal reflection.

99. 发明授权

EP2218115B1 BELEUCHTUNGSVORRICHTUNG 有权
公开(公告)号：EP2218115B1
公开(公告)日：2018-10-31
申请号：EP08855324.3
申请日：2008-11-26
申请人： OSRAM Opto Semiconductors GmbH
发明人： WIRTH, Ralph
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/44

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