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    • 96. 发明申请
    • Process for producing magnetic recording medium
    • 磁记录介质的制造方法
    • US20060280862A1
    • 2006-12-14
    • US11448076
    • 2006-06-07
    • Nobuhiro YasuiToru Den
    • Nobuhiro YasuiToru Den
    • B05D5/12
    • G11B5/84G11B5/85
    • A magnetic recording medium is provided which is contaminated less and improved in magnetic properties. The process for producing a magnetic recording medium having a recording layer constituted of magnetic granule portions dispersed in a nonmagnetic matrix portion comprises a first step of forming, on a base body, a nonmagnetic matrix portion, and Cu or Ag granule portions dispersed therein by a gas-phase deposition method, a second step of laminating magnetic granule portions on the Cu or Ag granule portions and laminating an additional nonmagnetic matrix portion on the nonmagnetic matrix portion formed in the first step, and a third step of heat-treating the laminate.
    • 提供磁性记录介质,其被污染较少并且磁性能得到改善。 制造具有由分散在非磁矩阵部分的磁性颗粒部分构成的记录层的磁记录介质的方法包括在基体上形成非磁矩阵部分和在其中分散有Cu或Ag颗粒部分的第一步骤 气相沉积方法,在Cu或Ag颗粒部分上层压磁性颗粒部分并在另一非磁性基体部分层叠另一非磁性基体部分的第二步骤,以及第三步骤对第一步骤进行热处理。
    • 97. 发明申请
    • Structure, magnetic recording medium, and method of producing the same
    • 结构,磁记录介质及其制造方法
    • US20060213426A1
    • 2006-09-28
    • US11386755
    • 2006-03-23
    • Nobuhiro YasuiRyoko HorieToru Den
    • Nobuhiro YasuiRyoko HorieToru Den
    • C30B11/00C30B9/00C30B17/00C30B21/02C30B28/06
    • G11B5/667G11B5/7325G11B5/8404G11B5/855
    • To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
    • 为了提供具有相分离结构的纳米尺寸的薄膜结构,对于在两种材料之间可以形成化合物的情况是有效的。 由除了Si和Ge之外的元素A和Si(Si)1-n(其中0 <= n <1)之间的元素A之间的化合物的第一元件构成的结构, 以及包含元素A和Si N 1-n N(其中0 <= n <= 1)之一的第二元件,其中第一元件和 第二构件是形成在基板上的柱状构件,其侧面被另一构件包围,长轴方向上的平均直径D1的比D1 / Ds相对于短轴方向的平均直径Ds 柱状构件的截面形状小于5,元素A为Li,Na,Mg,K,Ca,Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Rb,Sr ,Y,Zr,Nb,Mo,Ru,Rh,Pd,Cs,Ba,La,Hf,Ta,W,Re,Os,Ir,Pt,Ce,Pr,Nd,Sm,Gd,Tb,Dy,Ho ,Er,Tm,Yb,Lu和B.