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91. 发明专利

JPS5997485A CONTROLLER FOR EXHAUST OF BUILDING WITH DUST GENERATING SOURCE 失效
公开(公告)号：JPS5997485A
公开(公告)日：1984-06-05
申请号：JP20907682
申请日：1982-11-29
申请人： TAKASAGO THERMAL ENGINEERING
发明人： TAKAHASHI ATSUSHI , NAKAGAWA SEIJI
IPC分类号： F27D17/00 , B08B15/02

92. 发明专利

JPS5853252B2 JPS5853252B2 - 失效
公开(公告)号：JPS5853252B2
公开(公告)日：1983-11-28
申请号：JP3424776
申请日：1976-03-29
申请人： Takasago Thermal Engineering
发明人： TAKAHASHI ATSUSHI
IPC分类号： F24F13/072 , A62C2/12 , F24F7/00 , F24F7/04 , F24F7/06 , F24F13/15
CPC分类号： F24F13/072

93. 发明专利

JP2009270191A Cold rolled steel sheet having excellent deep drawability and method for producing the same 有权
标题翻译：具有优异深度可拉伸性的冷轧钢板及其制造方法
公开(公告)号：JP2009270191A
公开(公告)日：2009-11-19
申请号：JP2009005003
申请日：2009-01-13
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： YAMAGUCHI YUKIKO , SUGIURA NATSUKO , TAKAHASHI ATSUSHI
IPC分类号： C22C38/00 , B21B1/22 , B21B1/26 , B21B3/00 , C21D9/48 , C22C38/14 , C22C38/54
摘要： PROBLEM TO BE SOLVED: To provide a cold rolled steel sheet having excellent deep drawability which is suitable for, in particular, a product such as automotive parts and cans requiring severe control in plane anisotropy, to provide a hot rolled steel sheet as the material thereof, and to provide methods for producing them.
SOLUTION: The cold rolled steel sheet having excellent deep drawability has a composition containing, by mass, >0.005% to 0.020% C and 0.05 to 1.0% Mn, and containing Ti so as to satisfy (4×C+0.035)≤Ti≤(4×C+0.15), wherein the content of Si is limited to ≤0.5%, P to ≤0.1%, S to ≤0.015%, Al to ≤0.5% and N to ≤0.01%, and the balance iron with inevitable impurities, and wherein the X-ray random strength ratio (A) in the {111} orientation and the X-ray random strength ratio (B) in the {111} orientation in the central part of the sheet thickness direction are ≥5, and also, the absolute value |(A)-(B)| in a difference between (A) and (B) is ≤4.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方案为了提供一种适用于特别是需要严格控制平面各向异性的汽车部件和罐等的产品，具有优良的深冲性的冷轧钢板，以提供热轧钢板作为并提供其制造方法。解决方案：具有优异的深冲性的冷轧钢板具有以质量计含有0.005％至0.020％的C和0.05至1.0％的Mn并且含有Ti以满足（4×C + 0.035） ≤Ti≤（4×C + 0.15），其中Si的含量限制在≤0.5％，P≤0.1％，S至≤0.015％，Al≤0.5％，N≤0.01％铁不可避免的杂质，其中ä111} <112>取向中的X射线随机强度比（A）和ä111} <110>取向中的X射线随机强度比（B）板厚方向为≥5，（A）和（B）之间的绝对值¾（A） - （B）¾为≤4。版权所有（C）2010，JPO＆INPIT

94. 发明专利

JP2008261029A High-strength hot-rolled steel sheet superior in punching workability, and manufacturing method thereof 有权
标题翻译：高强度热轧钢板超级冲压加工性能及其制造方法
公开(公告)号：JP2008261029A
公开(公告)日：2008-10-30
申请号：JP2007105732
申请日：2007-04-13
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： YAMAGUCHI YUKIKO , TAKAHASHI ATSUSHI , OKAMOTO TSUTOMU
IPC分类号： C22C38/00 , C21D9/46 , C22C38/14
摘要： PROBLEM TO BE SOLVED: To provide a high strength steel sheet which has superior features in punching workability severely required mainly as automobile parts and a high tensile strength of 690 MPa or higher.
SOLUTION: The high-strength hot-rolled steel plate superior in punching workability is characterised by containing, in mass%, 0.01-0.2% of C, 0.01-1.5% of Si, 0.25-3% of Mn; and furthermore containing either of one kind or two kinds or more selected from the group consisting of 0.03-0.2% of Ti, 0.01-0.2% of Nb, 0.01-0.2% of V, 0.01-0.2% of Mo and balance Fe with inevitable impurities; and showing that the segregation amount of C to large angle grain boundaries is 4-10 atms/nm
2 .
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种主要作为汽车部件和690MPa以上的高抗拉强度严格要求的冲压加工性优异的高强度钢板。解决方案：冲压加工性优异的高强度热轧钢板的特征在于以质量％计含有C 0.01-0.2％，Si：0.01〜1.5％，Mn：0.25〜3％并且还含有从0.03-0.2％的Ti，0.01-0.2％的Nb，0.01-0.2％的V，0.01-0.2％的Mo和余量的Fe中选出的一种或两种或更多种之一，不可避免的杂质; 并且表明C与大角度晶界的分离量为4-10atms / nm 2 。版权所有（C）2009，JPO＆INPIT

95. 发明专利

JP2007262496A High-strength extra-fine steel wire superior in ductility 有权
标题翻译：高强度超细钢丝电缆
公开(公告)号：JP2007262496A
公开(公告)日：2007-10-11
申请号：JP2006089219
申请日：2006-03-28
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： TAKAHASHI ATSUSHI , TARUI TOSHIZO , SUGIYAMA MASAAKI
IPC分类号： C22C38/00 , C21D8/06 , C22C38/04 , C22C38/58
摘要： PROBLEM TO BE SOLVED: To provide a high-strength extra-fine steel wire which has as high strength as 4,000 MPa or higher by tensile strength, and as superior ductility as 40% or higher by a draw ratio.
SOLUTION: The high-strength extra-fine steel wire superior in ductility has a tensile strength of 4,000 MPa or higher and is formed of a pearlite structure. In each pearlite colony composing the above pearlite structure, an average space between pearlite lamellae is within a range of 4 to 1 by a ratio of the maximal value to the minimal value.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过拉伸强度提供具有4,000MPa以上的高强度的高强度的超细钢丝，并且通过拉伸比提供优异的延展性为40％以上。
解决方案：延展性优异的高强度超细钢丝的拉伸强度为4000MPa以上，由珠光体组织形成。在构成上述珠光体组织的每个珠光体组织中，通过最大值与最小值的比例，珠光体薄片之间的平均间隔在4比1的范围内。版权所有（C）2008，JPO＆INPIT

96. 发明专利

JP2001272340A CRYSTAL DEFECT EVALUATION METHOD AND APPARATUS 失效
公开(公告)号：JP2001272340A
公开(公告)日：2001-10-05
申请号：JP2000085566
申请日：2000-03-27
申请人： NIPPON STEEL CORP
发明人： TAKAHASHI ATSUSHI , KAWAKAMI KAZUTO
IPC分类号： G01B11/30 , G01N21/49 , G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for accurately measuring the shape, orientation and size of a crystal defects in a wafer or the like. SOLUTION: This crystal defect evaluation method makes laser light incident on a crystal and detects scattered light from the surface and the inside of the crystal. The crystal defect evaluation method and the device therefor use a data processing method considering a shape effect based on Rayleigh scattering.

97. 发明专利

JPH09157092A PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH09157092A
公开(公告)日：1997-06-17
申请号：JP32450895
申请日：1995-12-13
申请人： NIPPON STEEL CORP
发明人： OTANI NOBORU , ONOE KOZO , TAKAHASHI ATSUSHI , KATSUNO MASAKAZU , YASHIRO HIROKATSU , KANETANI MASATOSHI
IPC分类号： C30B23/02 , C30B29/36 , H01L33/16 , H01L33/34
摘要： PROBLEM TO BE SOLVED: To decrease micropipe-like defects when a silicon carbide single crystal is grown by sublimation recrystallization method with using a seed crystal, by incorporating impurity elements in the growing atmosphere to supply a large amt. of impurities in the growing crystal. SOLUTION: A substrate 1 comprising silicon carbide is prepared as a seed crystal and attached to the inner face of a lid 4 of a crucible 3. After a source material 2 comprising a silicon carbide powder is supplied in the crucible 3, the crucible 3 is disposed in a double quartz tube 5. After the quartz tube 5 is evacuated, a work coil 8 is energized to heat the source material 2 to about 2000 deg.C. Then an atmosphere gas containing impurity atoms such as nitrogen in an amt. preferably >=10 cm is introduced into the tube 5 to grow a silicon carbide single crystal by sublimation recrystallization method, while a large amt. of impurities is introduced into the growing surface and the growing crystal. Thereby, micropipe-like defects can be decreased and the obtd. silicon carbide single crystal can be used as a light-emitting element for blue colors having excellent optical characteristics.

98. 发明专利

JPH0555634A VISIBLE LIGHT EMITTING DIODE LAMP 失效
公开(公告)号：JPH0555634A
公开(公告)日：1993-03-05
申请号：JP24261591
申请日：1991-08-28
申请人： NIPPON STEEL CORP
发明人： FUJIWARA YUICHIRO , TAKAHASHI ATSUSHI , KANETANI MASATOSHI
IPC分类号： H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
摘要： PURPOSE:To identify light colors of a visible light emission diode lamp which is molded by hyaline or opalescent resin. CONSTITUTION:In a visible light emitting diode lamp molded by hyaline or opalescent resin, a colored part 1a for indicating a color of light emitted by the diode or a display part 1b with a character is provided. Since an emitted light color of the diode can be identified even when no light emission occurs by the colored part 1a or the display part 1b with a character, working efficiency can be improved when a light emitting diode panel is fabricated with the visible light emitting diode lamp incorporated.

99. 发明专利

JPH0532496A PREPARATION OF INGOT OF SILICON CARBIDE SINGLE CRYSTAL HAVING LARGE APERTURE AND SILICON CARBIDE SINGLE CRYSTAL FOR SEED CRYSTAL 失效
公开(公告)号：JPH0532496A
公开(公告)日：1993-02-09
申请号：JP3615091
申请日：1991-03-01
申请人： NIPPON STEEL CORP
发明人： TAKAHASHI ATSUSHI , KANETANI MASATOSHI , FUJIWARA YUICHIRO
IPC分类号： C30B23/00 , C30B29/36 , H01L21/203
摘要： PURPOSE:To prepare an ingot of silicon carbide single crystal having large aperture, especially an ingot of 6H or 4H form of silicon carbide single crystal having large aperture. CONSTITUTION:A (0001) growth facet having a spiral step of helical growth. Seed crystal is arranged at the center of a cover of crucible and an ingot is grown by sublimation method by using a graphite crucible equipped with a graphite partition plate having an opening part with 1-3 times as large a size as the aperture of the silicon carbide single crystal in such a way that the graphite partition plate positions at the side of the silicon carbide single crystal.

100. 发明专利

JPH04320072A MANUFACTURE OF SILICON CARBIDE LIGHT EMITTING DIODE 失效
公开(公告)号：JPH04320072A
公开(公告)日：1992-11-10
申请号：JP8701991
申请日：1991-04-18
申请人： NIPPON STEEL CORP
发明人： FUJIWARA YUICHIRO , TAKAHASHI ATSUSHI , KANETANI MASATOSHI
IPC分类号： H01L21/208 , H01L33/16 , H01L33/34 , H01L33/40
摘要： PURPOSE:To provide a method for manufacturing a silicon carbide light emitting diode in which a deterioration of light emitting characteristics such as a deterioration of a green color is eliminated. CONSTITUTION:In a method for manufacturing a 6H type silicon carbide blue light emitting diode, 6H type silicon carbide single crystal is used as a substrate, and its surface azimuth is perpendicular to a plane (0001). In a method for manufacturing a 4H type silicon carbide purple light emitting diode, 6H silicon carbide single crystal is used as a substrate, and its surface azimuth is perpendicular to a plane (0001).

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