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91. 发明授权

US08324606B2 Resistance change type memory 有权
标题翻译：电阻变化型存储器
公开(公告)号：US08324606B2
公开(公告)日：2012-12-04
申请号：US12563470
申请日：2009-09-21
申请人： Takayuki Tsukamoto , Reika Ichihara , Hiroshi Kanno , Kenichi Murooka
发明人： Takayuki Tsukamoto , Reika Ichihara , Hiroshi Kanno , Kenichi Murooka
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0069 , G11C2213/72 , H01L27/101 , H01L27/2409 , H01L27/2481
摘要： A resistance change type memory of an aspect of the present invention including a first wiring configured to extend in a first direction, a second wiring configured to extend in a second direction crossing the first direction, a series circuit configured to connect to the first and second wirings, the series circuit including a non-ohmic element being more conductive in the first to second wiring direction than in the second to first direction and a resistance change type storage element in which data is stored according to a change of a resistance state, an energy supplying circuit configured to connect to the first wiring to supply energy to the first wiring, the energy being used to store the data in the resistance change type storage element, and a capacitance circuit configured to include a capacitive element and being connected to the second wiring.
摘要翻译：本发明的一个方面的电阻变化型存储器包括：构造成沿第一方向延伸的第一布线，沿与第一方向交叉的第二方向延伸的第二布线;串联电路，被配置为连接到第一和第二端布线，包括在第一至第二布线方向上比在第二至第一方向上更加导电的非欧姆元件的串联电路和根据电阻状态的变化存储数据的电阻变化型存储元件，能量供给电路，被配置为连接到所述第一布线以向所述第一布线供应能量，所述能量用于将所述数据存储在所述电阻变化型存储元件中;以及电容电路，被配置为包括电容元件并连接到所述第二布线接线。

92. 发明授权

US08320158B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08320158B2
公开(公告)日：2012-11-27
申请号：US12882685
申请日：2010-09-15
申请人： Hiroshi Kanno , Reika Ichihara , Takayuki Tsukamoto , Kenichi Murooka , Hirofumi Inoue
发明人： Hiroshi Kanno , Reika Ichihara , Takayuki Tsukamoto , Kenichi Murooka , Hirofumi Inoue
IPC分类号： G11C11/00
CPC分类号： G11C7/02 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0064 , G11C13/0097 , G11C2213/31 , G11C2213/71 , G11C2213/72
摘要： Nonvolatile semiconductor memory device of an embodiment includes: a memory cell array including a plurality of first and second lines intersecting each other and plural memory cells provided at intersections of the first and second lines and having data written and erased upon application of voltages of the same polarity; and a writing circuit configured to select first and second lines and supply a set or reset pulse to the memory cell through the selected first and second lines. In an erase operation, the writing circuit repeatedly supplies the reset pulse to a selected memory cell until data is erased, by increasing or decreasing voltage level and voltage application time of the reset pulse within a reset region. The reset region, or an aggregate of combinations of voltage level and voltage application time of the reset pulse, is a region where voltage level and voltage application time are negatively correlated.
摘要翻译：一个实施例的非易失性半导体存储器件包括：存储单元阵列，包括彼此相交的多个第一和第二线，以及设置在第一和第二线的交点处的多个存储单元，并且在施加相同的电压时写入和擦除数据极性; 以及写入电路，被配置为选择第一和第二行，并且通过所选择的第一和第二行向存储器单元提供置位或复位脉冲。在擦除操作中，写入电路通过增加或减小复位区域内的复位脉冲的电压电平和电压施加时间，将复位脉冲重复地提供给所选择的存储单元，直到数据被擦除。复位区域或复位脉冲的电压电平和电压施加时间的组合的总和是电压电平和电压施加时间呈负相关的区域。

93. 发明授权

US08279655B2 Non-volatile semiconductor memory device and method of controlling non-volatile semiconductor memory device 有权
标题翻译：非挥发性半导体存储器件及非易失性半导体存储器件的控制方法
公开(公告)号：US08279655B2
公开(公告)日：2012-10-02
申请号：US12885013
申请日：2010-09-17
申请人： Hiroshi Kanno , Takayuki Tsukamoto , Takahiko Sasaki , Takafumi Shimotori
发明人： Hiroshi Kanno , Takayuki Tsukamoto , Takahiko Sasaki , Takafumi Shimotori
IPC分类号： G11C11/00 , G11C29/04
CPC分类号： G11C8/10 , G11C13/0007 , G11C13/0069 , G11C29/50016 , G11C2013/0083 , G11C2213/31 , G11C2213/32 , G11C2213/72
摘要： According to an embodiment, there are provided a non-volatile semiconductor memory device includes: a memory cell array; a control circuit performing a series of operations to each memory cell and determining, as a defective memory cell, a memory cell whose data retention property does not satisfy a criteria, the series of operations including an operation applying a first bias to the memory cell in a forward direction, and including an operation thereafter applying a second bias to the memory cell in a reverse direction; a storage unit storing an address of the defective memory cell; and an address control unit performing a control to avoid storing data in the defective memory cell whose address is stored in the storage unit.
摘要翻译：根据实施例，提供了一种非易失性半导体存储器件，包括：存储单元阵列; 对每个存储单元执行一系列操作的控制电路，并且确定其数据保持特性不满足标准的存储单元作为缺陷存储单元，所述一系列操作包括对存储单元施加第一偏置的操作并且包括在相反方向上向存储单元施加第二偏置的操作; 存储单元，存储有缺陷的存储单元的地址; 以及地址控制单元，执行控制以避免将数据存储在其地址存储在存储单元中的有缺陷的存储单元中。

94. 发明申请

US20120224411A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND FORMING METHOD 有权
标题翻译：非挥发性半导体存储器件和形成方法
公开(公告)号：US20120224411A1
公开(公告)日：2012-09-06
申请号：US13350067
申请日：2012-01-13
申请人： Hiroshi KANNO , Takafumi Shimotori , Yoichi Minemura , Takahiko Sasaki , Takayuki Tsukamoto
发明人： Hiroshi KANNO , Takafumi Shimotori , Yoichi Minemura , Takahiko Sasaki , Takayuki Tsukamoto
IPC分类号： G11C11/21
CPC分类号： G11C13/0002 , G11C13/0028 , G11C13/0061 , G11C13/0064 , G11C13/0069 , G11C2013/0083
摘要： According to one embodiment, a control unit multiple-selects a first line for every N lines from a plurality of first lines. N is an integer greater than or equal to one. The control unit sets the multiple-selected first lines to a selection potential, and fixes potentials of non-selected first lines at least adjacent to the multiple-selected first lines at a first timing. The control unit causes the multiple-selected first lines to be in a floating state at a second timing after the first timing. The control unit selects one second line from the plurality of second lines and sets the one second line to a forming potential at a third timing after the second timing.
摘要翻译：根据一个实施例，控制单元从多条第一行为每N条线选择第一行。 N是大于或等于1的整数。控制单元将多个选择的第一行设置为选择电位，并且在第一定时将至少与多个选择的第一行相邻的未选择的第一行的电位进行固定。控制单元使第一定时后的第二定时使多选第一行处于浮动状态。控制单元从多条第二行中选择一条第二行，并在第二定时之后的第三定时将一条第二行设置成一个形成电位。

95. 发明授权

US08138893B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08138893B2
公开(公告)日：2012-03-20
申请号：US12057671
申请日：2008-03-28
申请人： Takefumi Endo , Takayuki Tsukamoto
发明人： Takefumi Endo , Takayuki Tsukamoto
IPC分类号： H04Q5/22
CPC分类号： H04B5/02 , H04B5/0031 , H04B5/0037
摘要： In an IC tag, when a semiconductor integrated circuit device is activated, an operation control unit sets existence/nonexistence of a communication distance limitation for reducing a communication distance to a state management unit. If the communication distance limitation is not set, a switch unit is turned ON and a demodulated command is inputted from a command demodulation circuit to a command decode unit. If the communication distance limitation is set, a power intensity monitor unit judges whether the power of a rectification circuit is greater than or equal to a predetermined arbitrary field intensity. If the power is less than the predetermined arbitrary field intensity, the switch unit is turned OFF and various commands demodulated by the command demodulation circuit are not inputted to the command decode unit. As a result, the semiconductor integrated circuit device does not operate.
摘要翻译：在IC标签中，当半导体集成电路器件被激活时，操作控制单元设置存在/不存在通信距离限制，以减少与状态管理单元的通信距离。如果没有设定通信距离限制，则开关单元被接通，并且解调命令从命令解调电路输入到命令解码单元。如果设置了通信距离限制，则功率强度监视单元判断整流电路的功率是否大于或等于预定的任意场强。如果功率小于预定的任意场强，则切换单元关闭，并且由命令解调电路解调的各种命令不被输入到命令解码单元。结果，半导体集成电路器件不工作。

96. 发明申请

US20110216582A1 INFORMATION RECORDING AND REPRODUCING DEVICE 有权
标题翻译：信息记录和复制设备
公开(公告)号：US20110216582A1
公开(公告)日：2011-09-08
申请号：US13040823
申请日：2011-03-04
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
IPC分类号： G11C11/21 , G11C11/34
CPC分类号： G11B9/04 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.
摘要翻译：根据一个实施例，信息记录和再现装置包括记录层和驱动单元。记录层包括含有第一化合物的第一层。第一化合物包括第一正离子元素。第一正离子元件由过渡金属元素制成并用作第一正离子。第二正离子元素用作第二正离子。驱动单元被配置为在记录层中产生相变，并且通过施加电压和施加电流到记录层中的至少一个来记录信息。当假设第一化合物为完美晶体时，第二正离子元件的第二配位位置处的第一正离子元素的配位数为配位数的80％以上且小于配位数的100％。

97. 发明申请

US20110216576A1 INFORMATION RECORDING/REPRODUCING DEVICE 有权
标题翻译：信息记录/再现设备
公开(公告)号：US20110216576A1
公开(公告)日：2011-09-08
申请号：US13044384
申请日：2011-03-09
申请人： Shinya Aoki , Kohichi Kubo , Takayuki Tsukamoto , Takahiro Hirai , Chikayoshi Kamata , Tsukasa Nakai
发明人： Shinya Aoki , Kohichi Kubo , Takayuki Tsukamoto , Takahiro Hirai , Chikayoshi Kamata , Tsukasa Nakai
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/1233 , G11B9/04 , G11C13/0011 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/146
摘要： According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.
摘要翻译：根据一个实施例，信息记录/再现装置包括记录层和驱动器部分。记录层具有包含第一化合物的第一层。第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。第二氧化物具有与第一氧化物相同的晶体结构，并且含有与第一金属元素不同的第二金属元素。驱动器部分被配置为在记录层中产生状态变化，以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。基于晶体结构，第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。

98. 发明申请

US20110062407A1 INFORMATION RECORDING AND REPRODUCING DEVICE 有权
标题翻译：信息记录和复制设备
公开(公告)号：US20110062407A1
公开(公告)日：2011-03-17
申请号：US12884880
申请日：2010-09-17
申请人： Chikayoshi KAMATA , Takayuki Tsukamoto , Takeshi Yamaguchi , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人： Chikayoshi KAMATA , Takayuki Tsukamoto , Takeshi Yamaguchi , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号： H01L47/00
CPC分类号： G11B11/002 , B82Y10/00 , G11B9/04 , G11B9/149 , G11B11/08 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/31 , G11C2213/53 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79
摘要： According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region.
摘要翻译：根据一个实施例，信息记录和再现装置包括记录层，其包括典型元件和过渡元件，并且将第一电阻率的状态和与第一电阻率不同的第二电阻率的状态存储在典型元件的移动，以及设置在记录层的一端以向记录层施加电压或电流的电极层。记录层包括与电极层接触的第一区域，电极层包括与记录层接触的第二区域。第一和第二区域彼此相对。并且第一和第二区域包括典型的元件，并且第一区域中的典型元件的浓度高于第二区域中的典型元素的浓度。

99. 发明申请

US20110062405A1 INFORMATION RECORDING AND REPRODUCING DEVICE 有权
标题翻译：信息记录和复制设备
公开(公告)号：US20110062405A1
公开(公告)日：2011-03-17
申请号：US12889558
申请日：2010-09-24
申请人： Takayuki Tsukamoto , Chikayoshi Kamata , Takeshi Yamaguchi , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人： Takayuki Tsukamoto , Chikayoshi Kamata , Takeshi Yamaguchi , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号： H01L45/00
CPC分类号： G11C13/0009 , G11C13/00 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements.
摘要翻译：根据一个实施例，一种信息记录和再现装置包括第一层和第二层之间的第一层，第二层和记录层，其能够在低电阻的第一状态和第二层之间的转变通过在第一和第二层之间流动电流而产生高电阻。记录层的周边部分具有与记录层的中心部分不同的组成。中心部分包括两种阳离子元件。并且中心部分以两种阳离子元素的比例与周边部分不同。

100. 发明授权

US07838877B2 Information recording and reproducing apparatus 有权
标题翻译：信息记录和再现装置
公开(公告)号：US07838877B2
公开(公告)日：2010-11-23
申请号：US12057982
申请日：2008-03-28
申请人： Shinya Aoki , Kohichi Kubo , Takayuki Tsukamoto , Chikayoshi Kamata , Takahiro Hirai , Toshiro Hiraoka
发明人： Shinya Aoki , Kohichi Kubo , Takayuki Tsukamoto , Chikayoshi Kamata , Takahiro Hirai , Toshiro Hiraoka
IPC分类号： H01L29/12
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： There is proposed a nonvolatile information recording and reproducing device with low power consumption and high thermal stability. The information recording and reproducing apparatus according to an aspect of the present invention includes a recording layer and a unit for recording information by applying a voltage to the recording layer to generate a state change in the recording layer. The recording layer being configured to include at least a first compound having a hollandite structure.
摘要翻译：提出了具有低功耗和高热稳定性的非易失性信息记录和再现装置。根据本发明的一个方面的信息记录和再现装置包括记录层和用于通过向记录层施加电压来记录信息以产生记录层中的状态变化的单元。记录层被配置为至少包括具有荷兰岩结构的第一化合物。

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