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    • 97. 发明授权
    • Electrochemical fabrication methods using transfer plating of masks
    • 使用掩膜转移电镀的电化学制造方法
    • US07195989B2
    • 2007-03-27
    • US10841383
    • 2004-05-07
    • Michael S. LockardDennis R. Smalley
    • Michael S. LockardDennis R. Smalley
    • H01L21/326H01L21/479
    • C25D1/003B33Y10/00C23C18/1605C23C18/1657C25D5/022C25D5/10H01L21/7682H01L21/76838
    • Three-dimensional structures are electrochemically fabricated by depositing a first material onto previously deposited material through voids in a patterned mask where the patterned mask is at least temporarily adhered to a substrate or previously formed layer of material and is formed and patterned onto the substrate via a transfer tool patterned to enable transfer of a desired pattern of precursor masking material. In some embodiments the precursor material is transformed into masking material after transfer to the substrate while in other embodiments the precursor is transformed during or before transfer. In some embodiments layers are formed one on top of another to build up multi-layer structures. In some embodiments the mask material acts as a build material while in other embodiments the mask material is replaced each layer by a different material which may, for example, be conductive or dielectric.
    • 三维结构通过在图案化掩模中通过空隙沉积到先前沉积的材料上的电化学制造,其中图案化掩模至少暂时粘附到基底或先前形成的材料层,并且经由 转印工具被图案化以能够转移所需的前体掩模材料图案。 在一些实施方案中,前体材料在转移到基底之后被转化成掩模材料,而在其它实施方案中,前体在转移期间或之前被转化。 在一些实施例中,层之间形成一层,以构建多层结构。 在一些实施例中,掩模材料用作构建材料,而在其它实施例中,掩模材料由例如导电或电介质的不同材料替换每层。