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91. 发明申请

US20120199739A1 SCANNING CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CORRECTING CHROMATIC SPHERICAL COMBINATION ABERRATION 有权
标题翻译：扫描充电颗粒光束装置和校正色彩组合结果的方法
公开(公告)号：US20120199739A1
公开(公告)日：2012-08-09
申请号：US13502754
申请日：2010-09-29
申请人： Tomonori Nakano , Takeshi Kawasaki , Kotoko Hirose
发明人： Tomonori Nakano , Takeshi Kawasaki , Kotoko Hirose
IPC分类号： H01J37/28
CPC分类号： H01J37/153 , H01J37/28
摘要： Disclosed is a scanning charged particle beam apparatus equipped with an aberration corrector, contrived to eliminate resolution degradation in tilt observation by a chromatic third-order aperture aberration without relying on a specific optical system. A controller of the scanning charged particle beam apparatus provides a chromatic third-order aperture aberration measurement method relevant to tilt observation of a specimen. Further, the controller has a chromatic aberration control function relevant to tilt observation of a specimen. By means of the chromatic aberration control function, the controller controls a chromatic aberration to be positive or negative, rather than remaining at 0, in order to eliminate an image blur which occurs in a direction parallel to the specimen surface due to a chromatic third-order aperture aberration and a chromatic aberration at a tilt angle (t1) under observation and another tilt angle (−t1) axially opposite to the tilt angle.
摘要翻译：公开了一种装备有像差校正器的扫描带电粒子束装置，其被设计为消除了通过彩色三阶孔径像差的倾斜观察中的分辨率劣化，而不依赖于特定的光学系统。扫描带电粒子束装置的控制器提供与样本的倾斜观察相关的彩色三阶孔径像差测量方法。此外，控制器具有与样本的倾斜观察相关的色差控制功能。通过色差控制功能，控制器将色差控制为正或负，而不是保持在0，以消除由于色差三分之一而在与样本表面平行的方向上发生的图像模糊。在观察时的倾斜角度（t1）和与倾斜角度轴向相反的另一个倾斜角度（-t1）的色差。

92. 发明授权

US08044433B2 GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage 有权
标题翻译：具有嵌入式栅电极的GaN系高电子迁移率晶体管（HEMT）具有第一凹部和第二凹部，以提高漏极击穿电压
公开(公告)号：US08044433B2
公开(公告)日：2011-10-25
申请号：US11392516
申请日：2006-03-30
申请人： Takeshi Kawasaki , Ken Nakata , Seiji Yaegashi
发明人： Takeshi Kawasaki , Ken Nakata , Seiji Yaegashi
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/045 , H01L29/0657 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.
摘要翻译：半导体器件包括衬底，在衬底上形成的GaN基半导体层，嵌入GaN基半导体层中的栅电极，形成在栅电极两侧的源电极和漏电极，第一凹部形成在栅电极和源电极之间，以及形成在栅电极和漏电极之间的第二凹部。第一凹部的深度比第二凹部的深度深。

93. 发明申请

US20110139980A1 CHARGED PARTICLE BEAM APPARATUS AND GEOMETRICAL ABERRATION MEASUREMENT METHOD THEREFORE 有权
标题翻译：充电颗粒光束装置和几何测量方法
公开(公告)号：US20110139980A1
公开(公告)日：2011-06-16
申请号：US13058540
申请日：2009-08-05
申请人： Tomonori Nakano , Takeshi Kawasaki , Kotoko Hirose , Hiroyuki Ito
发明人： Tomonori Nakano , Takeshi Kawasaki , Kotoko Hirose , Hiroyuki Ito
IPC分类号： G01N23/225
CPC分类号： H01J37/153 , H01J37/21 , H01J37/26 , H01J2237/282
摘要： Disclosed is a scanning charged particle microscope provided with an aberration measuring means that measures high-order geometrical aberration at high precision and high speed. An image obtained by a single-hole aperture and an image obtained by a multiple-hole aperture arranged in a region larger than that for the single-hole aperture are deconvoluted, an aberration quantity is determined based on the profiles of beams tilted in a plurality of directions and the obtained quantity is fed back to an aberration corrector.
摘要翻译：公开了一种带有像差测量装置的扫描带电粒子显微镜，其以高精度和高速测量高阶几何像差。通过单孔孔径获得的图像和通过布置在大于单孔孔径的区域中的多孔孔径获得的图像被去卷积，基于多个倾斜的光束的轮廓来确定像差量的方向和所获得的量被反馈到像差校正器。

94. 发明授权

US07834326B2 Aberration corrector and charged particle beam apparatus using the same 有权
标题翻译：畸变校正器和使用其的带电粒子束装置
公开(公告)号：US07834326B2
公开(公告)日：2010-11-16
申请号：US12187635
申请日：2008-08-07
申请人： Takeshi Kawasaki , Noboru Moriya , Tomonori Nakano , Kotoko Hirose
发明人： Takeshi Kawasaki , Noboru Moriya , Tomonori Nakano , Kotoko Hirose
IPC分类号： H01J1/50
CPC分类号： G01N23/20 , H01J37/153 , H01J37/26 , H01J2237/032 , H01J2237/1534 , H01J2237/28
摘要： The present invention provides an aberration corrector giving excellent assembly accuracy but having fewer parts and fewer adjustment locations in number. In order to achieve it, a multistage multipole is formed by arranging plural combinations of electrodes around an optical axis using alignment blocks, each combination of electrodes being made by brazing-integrating plural electrodes with a ceramic material interposed therebetween.
摘要翻译：本发明提供一种像差校正器，其具有优异的组装精度，但具有较少的部件和较少的调节位置。为了实现这一点，通过使用对准块布置围绕光轴的电极的多个组合来形成多级多极，电极的组合通过将陶瓷材料插入其间的多个电极进行钎焊积分而制成。

95. 发明授权

US07723751B2 Semiconductor device and fabrication method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07723751B2
公开(公告)日：2010-05-25
申请号：US11392517
申请日：2006-03-30
申请人： Takeshi Kawasaki , Ken Nakata , Seiji Yaegashi
发明人： Takeshi Kawasaki , Ken Nakata , Seiji Yaegashi
IPC分类号： H01L29/38 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/267 , H01L29/0646 , H01L29/1029 , H01L29/1608 , H01L29/2003 , H01L29/66462 , H01L29/7397 , H01L29/7783 , H01L29/7788 , H01L29/7789 , H01L29/802
摘要： A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.
摘要翻译：半导体器件包括衬底，在衬底上形成的SiC漂移层，形成在SiC漂移层上并包括沟道层的GaN基半导体层，形成在GaN基半导体上的源电极和栅电极形成在SiC漂移层的部分并且位于源极和栅极电极下方的电流阻挡区，以及形成在跨越SiC层的与GaN基半导体层相对的表面上的漏电极。

96. 发明授权

US07592647B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07592647B2
公开(公告)日：2009-09-22
申请号：US11392639
申请日：2006-03-30
申请人： Ken Nakata , Takeshi Kawasaki , Seiji Yaegashi
发明人： Ken Nakata , Takeshi Kawasaki , Seiji Yaegashi
IPC分类号： H01L29/38 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
摘要翻译：半导体器件包括形成在基板上的GaN基半导体层和开口区域，形成在开口区域的内表面上的电子传导层，具有比电子传导层更大的带隙的电子供给层并且形成在设置在开口区域的内表面上的电子传导层上，以及形成在开口区域中的电子供给层的侧表面上的栅电极。源极电极形成在GaN基半导体层上。漏电极连接到与源电极相对的GaN基半导体层的表面。

97. 发明授权

US07531799B2 Charged particle beam column 有权
标题翻译：带电粒子束柱
公开(公告)号：US07531799B2
公开(公告)日：2009-05-12
申请号：US11802298
申请日：2007-05-22
申请人： Takeshi Kawasaki , Takaho Yoshida , Tomonori Nakano
发明人： Takeshi Kawasaki , Takaho Yoshida , Tomonori Nakano
IPC分类号： H01J37/00
CPC分类号： H01J37/153 , H01J37/1478 , H01J2237/0458 , H01J2237/1534 , H01J2237/2611 , H01J2237/2809 , H01J2237/2817
摘要： A scanning electron microscope includes an electron gun to generate an electron beam, and an electron optical system directing the electron beam to a specimen. The electron optical system includes an objective lens that converges the electron beam to a surface of the specimen, an aberration corrector disposed between the electron gun and the objective lens so as to at least compensate for aberration caused by the objective lens, and a tilter which tilts electron beam to be incident into the aberration corrector. The aberration corrector further compensates for aberration caused by the tilter.
摘要翻译：扫描电子显微镜包括用于产生电子束的电子枪和将电子束引导到样品的电子光学系统。电子光学系统包括将电子束会聚到样本表面的物镜，设置在电子枪和物镜之间的像差校正器，以至少补偿由物镜引起的像差，以及倾斜器倾斜电子束入射到像差校正器中。像差校正器进一步补偿由倾斜引起的像差。

98. 发明授权

US07521675B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07521675B2
公开(公告)日：2009-04-21
申请号：US11335518
申请日：2006-01-20
申请人： Takeshi Kawasaki , Tomonori Nakano
发明人： Takeshi Kawasaki , Tomonori Nakano
IPC分类号： G01N23/00
CPC分类号： H01J37/153 , H01J37/28 , H01J2237/1532
摘要： A charged particle beam apparatus having an aberration correction capability at high acceleration voltages. The charged particle beam apparatus comprises a charged particle beam source; an extraction electrode to extract charged particles from the charged particle beam source; a charged particle beam gun including a means for converging a charged particle beam; an acceleration means for accelerating a charged particle beam emitted from the charged particle beam gun; and an aberration correction means disposed between the charged particle beam gun and the acceleration means, in which an aberration enough to cancel out an aberration of a charged particle beam on the specimen surface is provided to an extraction electrical potential or an equivalent beam at the initial acceleration stage.
摘要翻译：一种在高加速电压下具有像差校正能力的带电粒子束装置。带电粒子束装置包括带电粒子束源; 提取电极，用于从带电粒子束源提取带电粒子; 带电粒子束枪，包括用于会聚带电粒子束的装置; 用于加速从带电粒子束枪发射的带电粒子束的加速装置; 以及设置在带电粒子束枪和加速装置之间的像差校正装置，其中足够抵消样品表面上的带电粒子束的像差的像差被提供给初始时的提取电位或等效光束加速阶段。

99. 发明授权

US07438047B2 Multi-cylinder engine 失效
标题翻译：多缸发动机
公开(公告)号：US07438047B2
公开(公告)日：2008-10-21
申请号：US11854568
申请日：2007-09-13
申请人： Takeshi Kawasaki , Yutaka Teruumi , Koji Fujimura , Hiroshi Inoue , Tetsushi Karasawa , Seiji Izuhara
发明人： Takeshi Kawasaki , Yutaka Teruumi , Koji Fujimura , Hiroshi Inoue , Tetsushi Karasawa , Seiji Izuhara
IPC分类号： F02D9/10
CPC分类号： F02D41/32 , F02D41/008 , F02M35/10085 , F02M35/10216 , F02M35/112 , F02M69/044 , F02P5/1512 , Y02T10/46
摘要： The present invention concerns a multi-cylinder engine comprising a throttle body (5) in which a throttle intake-air passage (6) is provided. A throttle valve (7) is arranged in this throttle intake-air passage (6). Attached to the throttle body (5) is an injector (8), a leading end portion (9) of which is arranged opposite to an interior area of the throttle intake-air passage (6) downstream of the throttle valve (7) and is opened to provided a liquid-fuel injection hole (10). An intake-air pressure sensor (15) is attached to the throttle body (5) together with the injector (8) and an intake-air pressure introduction passage (18) has an inlet (18a) provided by opening an inner peripheral surface of the throttle intake-air passage (6) upstream of the injector (8).
摘要翻译：本发明涉及一种包括节气门体（5）的多气缸发动机，其中设有节气门进气通道（6）。节流阀（7）布置在该节气门进气通道（6）中。连接到节气门体（5）的喷射器（8），其前端部（9）与节流阀（7）下游的节气门进气通道（6）的内部区域相对设置，打开以设置液体燃料喷射孔（10）。进气压力传感器（15）与喷射器（8）一起安装在节气门体（5）上，进气压力引入通道（18）具有通过打开内周面位于喷油器（8）上游的节气门进气通道（6）。

100. 发明授权

US07433958B2 Packet relay processing apparatus 有权
标题翻译：分组中继处理装置
公开(公告)号：US07433958B2
公开(公告)日：2008-10-07
申请号：US11279338
申请日：2006-04-11
申请人： Kuniaki Shimada , Ken Yokoyama , Toshihiko Kurita , Tsuneo Katsuyama , Takeshi Kawasaki , Koichi Takaba , Hiroyasu Kageyama
发明人： Kuniaki Shimada , Ken Yokoyama , Toshihiko Kurita , Tsuneo Katsuyama , Takeshi Kawasaki , Koichi Takaba , Hiroyasu Kageyama
IPC分类号： G06F15/16
CPC分类号： H04L29/06 , H04L67/1002 , H04L67/1008 , H04L67/1012 , H04L67/1014 , H04L67/1023 , H04L67/14 , H04L69/16 , H04L69/161 , H04L69/163 , H04L69/22 , H04L69/329
摘要： A packet processing unit and a session managing unit, which are conventionally arranged in a server, are arranged in a network connecting device, and the network connecting device performs a packet relay process based on session management. As a result, the load on a server is reduced, and a process by the server is performed faster.
摘要翻译：通常布置在服务器中的分组处理单元和会话管理单元被布置在网络连接设备中，并且网络连接设备基于会话管理执行分组中继处理。结果，减少了服务器上的负载，并且更快地执行服务器的处理。

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