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    • 91. 发明授权
    • Method for manufacturing electrostatic discharge protection (ESD) and
BiCMOS
    • 制造静电放电保护(ESD)和BiCMOS的方法
    • US5976921A
    • 1999-11-02
    • US997481
    • 1997-12-23
    • Hiroshi Maeda
    • Hiroshi Maeda
    • H01L27/02H01L21/8238
    • H01L27/0259
    • A semiconductor device having an electrostatic discharge protection device and at least one accompanying device selected from the group comprising of a N or P channel MOS transistor, CMOS, bipolar transistor and BiCMOS, in which the electrostatic discharge protection device comprises a vertical type bipolar transistor including; a semiconductor substrate; an epitaxial layer laminated on the semiconductor substrate; a buried collector of a first conductivity type which is formed of the semiconductor substrate or which is formed from the surface of the semiconductor substrate to the epitaxial layer; a base of a second conductivity type which is a lightly doped well and formed on the epitaxial layer; and an emitter of the first conductivity type and formed on the surface layer of the base of the second conductivity type; and in which the base is adapted to have impurity concentration and depth so that a punch-through is generated between the emitter and the collector of the electrostatic discharge protection device when a voltage higher than the operation voltage of the accompanying device or a voltage lower than the ground voltage is applied between the emitter and the collector, the base and the emitter being shorted with each other.
    • 一种具有静电放电保护装置的半导体器件和选自包括N或P沟道MOS晶体管,CMOS,双极晶体管和BiCMOS的组的至少一个伴随器件,其中静电放电保护器件包括垂直型双极晶体管,其包括 ; 半导体衬底; 层叠在所述半导体基板上的外延层; 由半导体衬底形成或由半导体衬底的表面形成到外延层的第一导电类型的埋地集电器; 第二导电类型的基底,其是轻掺杂阱并形成在外延层上; 和第一导电类型的发射极,并形成在第二导电类型的基极的表面层上; 并且其中所述基底具有杂质浓度和深度,使得当高于所述伴随器件的操作电压或低于所述静电放电保护器件的电压的电压时,在所述静电放电保护器件的发射极和集电极之间产生穿通 接地电压施加在发射极和集电极之间,基极和发射极彼此短路。
    • 94. 发明授权
    • Semiconductor device
    • 半导体器件
    • US5672894A
    • 1997-09-30
    • US543864
    • 1995-10-19
    • Hiroshi MaedaSusumu UedaHiroshi FujimotoYoshiaki Nakayama
    • Hiroshi MaedaSusumu UedaHiroshi FujimotoYoshiaki Nakayama
    • H01L21/3205H01L21/768H01L23/482H01L23/52H01L23/522H01L29/417H01L29/78H01L29/76H01L29/94H01L31/062H01L31/113
    • H01L29/7816H01L23/4824H01L29/41758H01L2924/0002
    • The resistance to electromigration in a double-layer Al wiring structure of lateral DMOS or the like is improved by further reducing ON resistance and mitigating current concentration. The first-layer source wiring and the first-layer drain wiring which are electrically connected to a plurality of source cells and drain cells respectively are formed into a pectinate pattern respectively. The second-layer source wiring and the second-layer drain wiring are also formed into a pectinate pattern respectively and disposed in inclination at 45 degrees to the patterns of the first-layer source wiring and first-layer drain wiring. At the intersections of the first-layer source wiring and the second-layer source wiring, at the intersections of the first-layer drain wiring and the second-layer drain wiring, at the outer circumferential portions of the pectinate patterns of first-layer source and drain wirings and at the source and drain pads, contact holes are provided on a layer insulation film to make a contact between the first-layer source and drain wirings and the second-layer source and drain wirings, respectively.
    • 通过进一步降低导通电阻和减轻电流浓度,提高了横向DMOS等的双层Al布线结构中的电迁移阻力。 分别与多个源电池和漏电池电连接的第一层源极布线和第一层漏极布线分别形成果胶图案。 第二层源极布线和第二层漏极布线也分别形成为果胶图案,并且以与第一层源极布线和第一层漏极布线的图案成45度的倾斜度设置。 在第一层源极布线和第二层源极布线的交点处,在第一层漏极布线和第二层漏极布线的交点处,在第一层源极布线的第二层源极布线 和漏极布线,并且在源极和漏极焊盘处,接触孔设置在层间绝缘膜上,以分别在第一层源极和漏极布线与第二层源极和漏极布线之间接触。
    • 96. 发明授权
    • Method for driving display device
    • 驱动显示装置的方法
    • US5412395A
    • 1995-05-02
    • US892736
    • 1992-06-01
    • Hiroshi MaedaTakuro Omori
    • Hiroshi MaedaTakuro Omori
    • G02F1/133G09G3/20G09G3/36H04N3/12H04N5/66
    • H04N3/127G09G3/2051G09G3/3611G09G3/2018G09G3/2055
    • A frame thinning out system has been used as a display driving method for making a gradational display with several brightness levels on the screen of a liquid crystal display device and the like. This display driving method creates a gradational display by setting a plurality of frame time periods, during which each of a plurality of pixels on the screen of the display device is controlled for displaying an image, as one integration time period. The pixels are turned on for only a number of specified frame time periods corresponding to a brightness level to be displayed. All pixels of the display device are grouped into multiple groups composed of a plurality of pixels contiguous to each other. The number of pixels to be turned on in each frame time period is selected corresponding to the specified gradation data within the same group. Thus, the number of pixels to be turned on for one frame time period may be equal between subgroups in the scanning lines within the same group. The frame time period during which the number of pixels turned on is kept constant is set such that a human being does not sense flicker. Thus, a gradational display without noticeable flicker can be obtained. Since no delicate shades of brightness occur among pixels to the same gradation level, quality of the display is improved.
    • 作为用于在液晶显示装置等的屏幕上制作具有若干亮度的等级显示的显示驱动方法,已经使用了帧缩小系统。 该显示驱动方法通过将多个帧时间周期设置为一个积分时间,从而在显示装置的屏幕上的多个像素中的每一个被控制用于显示图像,从而产生渐变显示。 像素被打开仅对应于要显示的亮度级别的指定帧时间段的数量。 显示装置的所有像素被分组成由彼此相邻的多个像素组成的多个组。 对应于同一组内的规定灰度数据,选择在每个帧时间段内要接通的像素数。 因此,在同一组内的扫描行中的子组之间,一帧时间段内要开启的像素数可以相等。 使开启像素数保持恒定的帧时间周期被设定为使得人不感觉到闪烁。 因此,可以获得没有明显闪烁的等级显示。 由于在相同灰度级别的像素中没有出现精细的亮度色调,所以提高了显示质量。
    • 97. 发明授权
    • Method for manufacturing oxide high-temperature superconductor
    • 氧化物高温超导体的制造方法
    • US5145829A
    • 1992-09-08
    • US396620
    • 1989-08-22
    • Toshihisa AsanoYoshiaki TanakaMasao FukutomiHiroshi Maeda
    • Toshihisa AsanoYoshiaki TanakaMasao FukutomiHiroshi Maeda
    • C04B35/00C01G1/00C04B35/45H01B12/00H01B13/00H01L39/24
    • H01L39/2419C04B35/4525Y10S505/739Y10S505/74
    • A compacted and highly oriented microstructure of the bulk-shaped Bi-Sr-Ca-Cu-O system oxide superconductor is obtained by the intermediate pressing method of the present invention. The growth rate of the high critical temperature phase in the bulk of Pb-doped Bi-Sr-Ca-Cu-O system oxide superconductor is also much improved and the sintering duration for obtaining a single phase having a high critical temperature is shorteneed by this method. Additionally, a higher critcal current density of Bi-Sr-Ca-Cu-O system oxide superconductor is obtained by the working under pressure process after cooling between a first and a second sintering step. Furthermore, the magnetic field dependence of the critical current density of Bi-Sr-Ca-Cu-O system oxide superconductor is also improved by the method of the present invention. The thus intermediate pressing process between the first and second sintering step of the present invention may be applied so easily as to facilitate the manufacture of tapes, wires, discs or the like of the Bi-Sr-Ca-Cu-O system oxide superconductor.
    • 通过本发明的中间压制方法获得块状Bi-Sr-Ca-Cu-O系氧化物超导体的压实且高度取向的微观结构。 Pb掺杂的Bi-Sr-Ca-Cu-O体系氧化物超导体的大部分高临界温度相的生长速度也大大提高,并且获得具有高临界温度的单相的烧结持续时间通过这种短路 方法。 另外,Bi-Sr-Ca-Cu-O系氧化物超导体的Critcal电流密度通过在第一和第二烧结步骤冷却之后的加压工艺得到。 此外,通过本发明的方法也提高了Bi-Sr-Ca-Cu-O系氧化物超导体的临界电流密度的磁场依赖性。 本发明的第一和第二烧结步骤之间的这样的中间压制方法可以容易地应用,以便于Bi-Sr-Ca-Cu-O系氧化物超导体的带,线,盘等的制造。
    • 99. 发明授权
    • Method of and apparatus for applying a paint
    • 涂布方法和装置
    • US5085169A
    • 1992-02-04
    • US438343
    • 1989-11-16
    • Shinji OkudaHiroshi MaedaTsuyoshi Nagata
    • Shinji OkudaHiroshi MaedaTsuyoshi Nagata
    • B05C1/02
    • B05C1/025
    • A method of and an apparatus for applying a paint, wherein elastic paint-coating means capable of being soaked with a paint are used. The paint-coating means are soaked with a paint and moved along the surfaces of an object to be coated with the paint while being pressed against these surfaces. The paint-coating means are mounted on the main bodies of paint-coating members, which are moved alternately to a first prescribed position where a paint-supplying means is disposed and to a second prescribed position where the object to be coated with the paint is disposed. When the paint-coating members are closed in the first prescribed position so as to hold the paint-supplying means between the paint-coating means, the paint-coating means are pushed against the paint-supplying means so that the paint may soak into the paint-coating means.
    • 使用涂料的方法和装置,其中使用能够用油漆浸泡的弹性涂料装置。 油漆涂布装置用油漆浸泡,并沿被涂在涂料上的物体的表面移动,同时被压在这些表面上。 涂料装置安装在涂料部件的主体上,它们交替地移动到设置有涂料供给装置的第一规定位置和涂覆有涂料的物体的第二规定位置 处置。 当涂料构件在第一规定位置关闭以便将涂料供给装置保持在涂料装置之间时,涂料装置被推向涂料供应装置,使得涂料可以浸入 油漆涂装方式。