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91. 发明申请

US20120070758A1 FUEL GAS SUPPLY DEVICE OF FUEL CELL SYSTEM 有权
标题翻译：燃油电池系统的燃油供应装置
公开(公告)号：US20120070758A1
公开(公告)日：2012-03-22
申请号：US13375348
申请日：2010-06-22
申请人： Masato Odashima , Keisuke Satou , Takatada Usami , Kentaro Kono , Akinobu Moriyama , Masahiro Haruyama , Akira Inoue
发明人： Masato Odashima , Keisuke Satou , Takatada Usami , Kentaro Kono , Akinobu Moriyama , Masahiro Haruyama , Akira Inoue
IPC分类号： H01M8/04
CPC分类号： B60L11/1887 , H01M8/04089 , H01M8/04201 , H01M8/0438 , H01M8/04388 , H01M8/04753 , H01M8/04992 , H01M2250/20 , Y02E60/50 , Y02T90/32 , Y02T90/34
摘要： A fuel gas supply device for supplying fuel gas to a fuel cell stack includes a control valve provided in a fuel gas path connecting a fuel tank and the fuel cell stack, an upstream-side pressure sensor and a downstream-side pressure sensor for detecting an upstream-side pressure and a downstream-side pressure, and a programmable controller. The programmable controller calculates a required opening based on a target fuel gas pressure and the downstream-side pressure and calculates an opening time and a closing time based on the required opening and the upstream-side pressure, or calculates an opening time and a closing time based on the target fuel gas pressure and the downstream-side pressure and calculates a required opening based on the opening time and the upstream-side pressure, and controls the control valve using the calculated required opening, opening time and closing time.
摘要翻译：用于向燃料电池堆供应燃料气体的燃料气体供给装置包括设置在连接燃料箱和燃料电池堆的燃料气体路径中的控制阀，上游侧压力传感器和下游侧压力传感器，上游侧压力和下游侧压力，以及可编程控制器。可编程控制器基于目标燃料气体压力和下游侧压力计算所需的开度，并且基于所需的开度和上游侧压力计算打开时间和关闭时间，或者计算打开时间和关闭时间基于目标燃料气体压力和下游侧压力，并且基于打开时间和上游侧压力计算所需的开度，并且使用所计算的所需开度，打开时间和关闭时间来控制控制阀。

92. 发明申请

US20120021549A1 METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氮化物半导体晶体生长方法及半导体器件制造工艺
公开(公告)号：US20120021549A1
公开(公告)日：2012-01-26
申请号：US13260434
申请日：2010-03-24
申请人： Masaki Fujikane , Akira Inoue , Ryou Kato , Toshiya Yokogawa
发明人： Masaki Fujikane , Akira Inoue , Ryou Kato , Toshiya Yokogawa
IPC分类号： H01L33/32 , H01L21/20
CPC分类号： H01L33/0075 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/16
摘要： A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber.
摘要翻译：氮化物半导体层形成方法包括以下步骤：（S1）将基板放置在反应室中，所述基板至少在上表面包括-r面氮化物半导体晶体; （S2）通过加热放置在反应室中的基板来增加基板的温度; 和（S3）在衬底上生长氮化物半导体层。在升温工序（S2）中，将氮源气体和III族元素源气体供给到反应室内。

93. 发明申请

US20120006914A1 HIGH PRESSURE FUEL PIPE CONSTRUCTION FOR AN INTERNAL COMBUSTION ENGINE 失效
标题翻译：用于内燃机的高压燃油管道结构
公开(公告)号：US20120006914A1
公开(公告)日：2012-01-12
申请号：US13237132
申请日：2011-09-20
申请人： Harsha Badarinarayan , Akira Inoue , Takashi Yoshizawa , Atsushi Hohkita , Hiroaki Saeki , Hiroshi Ono , Masahiro Soma , William Harvey , Steven J. Miller , Su-Wei Sung
发明人： Harsha Badarinarayan , Akira Inoue , Takashi Yoshizawa , Atsushi Hohkita , Hiroaki Saeki , Hiroshi Ono , Masahiro Soma , William Harvey , Steven J. Miller , Su-Wei Sung
IPC分类号： F02M61/00
CPC分类号： F16L27/047 , F02M37/0017 , F02M55/005 , F02M55/02 , F02M55/04 , F02M2200/306 , F02M2200/8084 , F02M2200/9015
摘要： A high pressure fuel pipe construction for an internal combustion engine, such as a direct injection engine. A conduit for the fuel is open at each end and a ball having a throughbore is slidably positioned over one end of the conduit. A reinforcing sleeve is positioned inside the end of the conduit so that the sleeve extends entirely through the ball. The sleeve, ball and the end of the conduit are then brazed together to attach the ball and conduit together. A double chamfer is provided at one end of the ball throughbore to facilitate inspection of the brazing quality. Additionally, a loop is formed in the conduit and a dampener is attached to the loop.
摘要翻译：用于内燃机的高压燃料管构造，例如直喷式发动机。用于燃料的导管在每个端部是开放的，并且具有通孔的球可滑动地定位在导管的一端上。加强套管定位在导管的端部内部，使得套筒完全延伸穿过球。然后将套筒，球和导管的端部钎焊在一起，将球和导管连接在一起。在球透孔的一端设有双倒角，以便检查钎焊质量。另外，在导管中形成环，并且阻尼器附接到环路。

94. 发明申请

US20120001223A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：氮化物半导体发光元件及其生产工艺
公开(公告)号：US20120001223A1
公开(公告)日：2012-01-05
申请号：US13256061
申请日：2010-12-27
申请人： Akira Inoue , Junko Iwanaga , Ryou Kato , Masaki Fujikane , Toshiya Yokogawa
发明人： Akira Inoue , Junko Iwanaga , Ryou Kato , Masaki Fujikane , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , H01L33/0075 , H01L33/32 , H01L2224/13 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.
摘要翻译：氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1，设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

95. 发明申请

US20110140776A1 VARIABLE FREQUENCY AMPLIFIER 有权
标题翻译：可变频率放大器
公开(公告)号：US20110140776A1
公开(公告)日：2011-06-16
申请号：US13058008
申请日：2009-11-04
申请人： Kazuhisa Yamauchi , Hidenori Yukawa , Akira Inoue , Atsushi Yamamoto , Koichi Fujisaki , Hiroomi Ueda
发明人： Kazuhisa Yamauchi , Hidenori Yukawa , Akira Inoue , Atsushi Yamamoto , Koichi Fujisaki , Hiroomi Ueda
IPC分类号： H03F1/00 , H03G3/00
CPC分类号： H03F1/42 , H03F1/32 , H03F3/191 , H03F3/211 , H03F3/24 , H03F2200/192 , H03F2200/195 , H03F2200/198 , H03F2200/201 , H03F2200/204 , H03F2200/207
摘要： A variable frequency amplifier includes a main amplifier system 4 for amplifying one of signals into which an input signal is split by a directional coupler 3 to output the amplified signal, and an injection amplifier system 9 for adjusting at least one of the amplitude and phase of the other one of the signals into which the input signal is split by the directional coupler 3 according to a setting provided thereto from outside the variable frequency amplifier, and for amplifying the other signal and injecting this amplified signal into an output side of the main amplifier system 4.
摘要翻译：可变频放大器包括：主放大器系统4，用于放大由定向耦合器3输入信号被分离的信号之一以输出放大信号;以及注入放大器系统9，用于调节幅度和相位中的至少一个根据从可变频放大器的外部提供的设置，由定向耦合器3将输入信号分离的信号中的另一个，并且用于放大另一信号并将该放大信号注入到主放大器的输出侧系统4。

96. 发明申请

US20110012899A1 IMAGE PROCESSING METHOD, IMAGE PROCESSING DEVICE AND RECORDING MEDIUM 有权
标题翻译：图像处理方法，图像处理装置和记录介质
公开(公告)号：US20110012899A1
公开(公告)日：2011-01-20
申请号：US12921057
申请日：2009-03-27
申请人： Akira Inoue , Shinichi Uehara , Kenichi Takatori
发明人： Akira Inoue , Shinichi Uehara , Kenichi Takatori
IPC分类号： G06T15/00
CPC分类号： H04N13/10 , G06T5/009 , G06T2207/10021 , G06T2207/10024 , G09G3/003 , G09G3/3611 , G09G2320/0247 , G09G2320/066 , G09G2320/0666 , G09G2320/0673 , H04N13/122 , H04N13/133 , H04N13/15 , H04N2213/006
摘要： An image processing method, an image processing device and a program which can improve sharpness are provided. An image processing device 100 includes a right eye image processing unit 101 that outputs a right eye image displayed to a right eye, a left eye image processing unit 102 that outputs a left eye image displayed to a left eye, and a multi-eye image disparity unit that displays a right eye image and a left eye image to different viewpoint positions. The right eye image processing unit 101 and/or the left eye image processing unit 102 perform correction processing to an input image, and fluctuate at least one of amounts of correction of the right eye image and the left eye image with time.
摘要翻译：提供了可以提高锐度的图像处理方法，图像处理装置和程序。图像处理装置100包括输出向右眼显示的右眼图像的右眼图像处理部101，输出向左眼显示的左眼图像的左眼图像处理部102和多眼图像视差单元，其将右眼图像和左眼图像显示到不同的视点位置。右眼图像处理单元101和/或左眼图像处理单元102对输入图像执行校正处理，并随时间波动右眼图像和左眼图像的校正量中的至少一个。

97. 发明授权

US07800895B2 Electronic apparatus and sound insulating method thereof 失效
标题翻译：电子仪器及其隔音方法
公开(公告)号：US07800895B2
公开(公告)日：2010-09-21
申请号：US11854810
申请日：2007-09-13
申请人： Akira Inoue , Sumio Otsuka , Norio Kobayashi , Toru Yamauchi
发明人： Akira Inoue , Sumio Otsuka , Norio Kobayashi , Toru Yamauchi
IPC分类号： H05K7/20
CPC分类号： G06F1/20 , G06F1/181
摘要： An electronic apparatus includes a drive for recording/reproducing a recording medium, and a sound absorbing member having a Helmholtz resonator for insulating sounds at a predetermined frequency among sounds generated by the drive.
摘要翻译：电子设备包括用于记录/再现记录介质的驱动器，以及具有亥姆霍兹共振器的吸声构件，用于在由驱动器产生的声音之间以预定频率隔离声音。

98. 发明申请

US20100182188A1 Radio Wave Absorber And Producing Method Thereof 有权
标题翻译：无线电波吸收器及其制作方法
公开(公告)号：US20100182188A1
公开(公告)日：2010-07-22
申请号：US12438358
申请日：2007-08-23
申请人： Toshio Kudo , Toshio Uchida , Akira Inoue , Kazuaki Yagi
发明人： Toshio Kudo , Toshio Uchida , Akira Inoue , Kazuaki Yagi
IPC分类号： H01Q17/00 , E04B1/92
CPC分类号： H05K9/009 , D04H1/587 , D04H1/64 , E04B2001/925 , Y10T428/23921
摘要： In order to provide a radio wave absorber that can be produced easily and has excellent radio wave absorption characteristics, a conductive surface 2 of a conductive paint 6 is formed on one surface 1a of a mat-shaped inorganic fiber bulk material 1.
摘要翻译：为了提供容易制造且具有优异的无线电波吸收特性的无线电波吸收体，导电涂料6的导电表面2形成在垫状无机纤维体材料1的一个表面1a上。

99. 发明授权

US07564073B2 CMOS and HCMOS semiconductor integrated circuit 失效
标题翻译： CMOS和HCMOS半导体集成电路
公开(公告)号：US07564073B2
公开(公告)日：2009-07-21
申请号：US11294566
申请日：2005-12-06
申请人： Haruyuki Sorada , Akira Asai , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
发明人： Haruyuki Sorada , Akira Asai , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
IPC分类号： H01L27/04
CPC分类号： H01L21/823807
摘要： A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.
摘要翻译：根据本发明的半导体集成电路制造方法包括：通过器件隔离来围绕每个区域来在半导体衬底的表面层部分中形成一对第一器件形成区域和一对第二器件形成区域的步骤; 在前述步骤之后形成覆盖半导体衬底的表面的第一氧化物膜的步骤; 去除所述第一氧化物膜的预期部分以暴露所述一对第二器件形成区域的步骤; 通过选择性外延生长形成一对异质结结构在由此露出的一对第二器件形成区上的步骤; 在上述步骤之后形成覆盖基板表面的第二氧化膜的步骤; 以及在所述一对第一器件形成区域和所述一对第二器件形成区域中的每一个上形成一对栅电极的步骤，由此在所述一对第一器件形成区域中最终形成正常互补MOS晶体管和异质结互补MOS晶体管形成区域和一对第二装置形成区域。

100. 发明授权

US07538837B2 Color filter and method for manufacturing the same 有权
标题翻译：滤色器及其制造方法
公开(公告)号：US07538837B2
公开(公告)日：2009-05-26
申请号：US11148916
申请日：2005-06-09
申请人： Shinsuke Nakazawa , Akira Inoue , Shunsuke Sega
发明人： Shinsuke Nakazawa , Akira Inoue , Shunsuke Sega
IPC分类号： G02F1/1335 , G02F1/13
CPC分类号： G02F1/133514 , G02F1/133516
摘要： A color filter having no light leakage when incorporated into a liquid crystal display, and also, those in which pseudo-defects are scarcely detected in the color filter defect inspection is provided. Also provided is a method for manufacturing the same. The color filter includes a transparent substrate; a light shielding part, formed on the transparent substrate, containing at least a light shielding material and a resin; and a pixel part formed on an opening of the light shielding part on the transparent substrate.
摘要翻译：提供了当结合到液晶显示器中时没有漏光的滤色器，以及在滤色器缺陷检查中几乎没有检测到伪缺陷的滤色器。还提供了制造该方法的方法。滤色器包括透明基板; 遮光部，形成在所述透明基板上，至少含有遮光材料和树脂; 以及形成在透明基板上的遮光部的开口部上的像素部。

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