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    • 93. 发明授权
    • Lamination machine and method to laminate a coverlay to a microelectronic package
    • 层压机和将覆盖层层压到微电子封装的方法
    • US06197665B1
    • 2001-03-06
    • US09292640
    • 1999-04-15
    • Thomas H. DiStefanoCraig S. MitchellTan Nguyen
    • Thomas H. DiStefanoCraig S. MitchellTan Nguyen
    • H01L2136
    • H01L21/67126H01L21/67092
    • A lamination machine includes means for using gas pressure to bring a coverlay and a microelectronic package into intimate contact and means for heating a coverlay adhesive in order to seal the coverlay to the package. A method of laminating a coverlay to a microelectronic package using the lamination machine includes using gas pressure to bring a coverlay into intimate contact with a microelectronic package. The method also includes heating an adhesive on the coverlay in order to adhere the coverlay to the package. Once the coverlay is laminated to the package, the package can be encapsulated with a curable encapsulant composition. The method may also include decreasing the pressure in the chamber disposed above the package to reduce voids and bubble and/or regulating the pressure in a bladder disposed in a chamber below the package. The lamination machine may also include a pressurized bladder which is used to support the microelectronic package and minimize stress on the leads during the lamination process.
    • 层压机包括用于使气体压力使盖板和微电子封装件紧密接触的装置,以及用于加热覆盖层粘合剂以便将覆盖物密封到包装的装置。 使用层压机将覆盖层层压到微电子封装的方法包括使用气体压力使覆盖物与微电子封装紧密接触。 该方法还包括加热覆盖物上的粘合剂以便将覆盖物粘附到包装上。 一旦覆盖层被层压到包装上,封装可以用可固化的密封剂组合物包封。 该方法还可以包括减小设置在包装上方的室中的压力,以减少空气和气泡和/或调节设置在包装下方的室中的气囊中的压力。 层压机还可以包括用于支撑微电子封装并且在层压过程期间使引线上的应力最小化的加压囊。
    • 94. 发明授权
    • Method of making chip mountings and assemblies
    • 制造芯片安装和组件的方法
    • US5994222A
    • 1999-11-30
    • US845786
    • 1997-04-25
    • John W. SmithThomas H. DiStefano
    • John W. SmithThomas H. DiStefano
    • H01L23/31H01L21/00
    • H01L23/3107H01L24/97H01L2224/50H01L2224/97H01L2924/01082H01L2924/12042
    • A bonding component for electrically connecting a semiconductor chip or wafer to a support substrate includes a dielectric layer having a central region, elongated slots defining the central region, and a peripheral region surrounding the slots. Metallic bonding pads are arranged on the central region, and leads extend from the bonding pads to the edge of the central region and extending partially across the elongated slots. The leads are detached from the peripheral region of the dielectric layer on the side of the slots opposite the central region. The leads are adapted to be deformed during bonding to a semiconductor chip or wafer. To form the bonding component, a dielectric layer is first provided having a central region, slots and a peripheral region. A metallic structure is also provided having bonding pads on the central region, and leads electrically connected to the bonding pads and to a plating bus disposed in the peripheral region. A resist is applied to the metallic structure in zones separating the leads, the metallic structure is plated in regions outside the zones with an etch resistant metal, the resist is removed and the leads are etched so as to form gaps in the metallic structure over the elongated slots.
    • 用于将半导体芯片或晶片电连接到支撑衬底的接合部件包括具有中心区域的介电层,限定中心区域的细长槽和围绕槽的周边区域。 金属接合焊盘布置在中心区域上,并且引线从焊盘延伸到中心区域的边缘并且部分延伸穿过细长槽。 引线与介质层的与中心区域相对的一侧的外围区域分离。 引线适于在与半导体芯片或晶片接合期间变形。 为了形成接合部件,首先提供具有中心区域,槽和周边区域的电介质层。 还提供了一种金属结构,在中心区域具有接合焊盘,并且引线电连接到接合焊盘和设置在周边区域中的电镀母线。 在分离引线的区域中将金属结构施加抗蚀剂,金属结构用耐蚀刻金属镀在区域外的区域中,去除抗蚀剂并蚀刻引线以在金属结构上形成间隙 细长的槽。