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91. 发明申请

US20060091386A1 Transistor and method for manufacturing the same 失效
公开(公告)号：US20060091386A1
公开(公告)日：2006-05-04
申请号：US11304646
申请日：2005-12-16
申请人： Naoto Kusumoto
发明人： Naoto Kusumoto
IPC分类号： H01L31/0376
CPC分类号： H01L29/66757 , H01L29/78609 , H01L29/78618
摘要： In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary between the source region and the channel forming region and the boundary between the drain region and the channel forming region, portions where electric field concentrations occur are displaced from the portion where a channel is formed. By reducing the OFF current (the leak current) without also reducing the ON current, a high mutual conductance is realized.

92. 发明授权

US06827787B2 Conveyor device and film formation apparatus for a flexible substrate 有权
标题翻译：用于柔性基底的输送装置和成膜装置
公开(公告)号：US06827787B2
公开(公告)日：2004-12-07
申请号：US09777280
申请日：2001-02-05
申请人： Masato Yonezawa , Naoto Kusumoto , Hisato Shinohara
发明人： Masato Yonezawa , Naoto Kusumoto , Hisato Shinohara
IPC分类号： C23C1600
CPC分类号： C23C16/545
摘要： With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation apparatus having the conveyor device are provided, which have a unit for continuously conveying a flexible substrate from one end to the other end, and which are characterized in that a plurality of cylindrical rollers are provided between the one end and the other end along an arc with a radius R, the cylindrical rollers being arranged such that their center axes run parallel to each other, and that a mechanism for conveying the flexible substrate while the substrate is in contact with each of the plurality of cylindrical rollers is provided.
摘要翻译：采用常规的圆筒罐法，用作成膜接地电极的区域是圆筒形罐的一部分，并且设备的尺寸与电极的表面积成比例变大。本发明提供一种具有输送装置的输送装置和成膜装置，其具有从一端向另一端连续输送柔性基板的单元，其特征在于，在一端并且另一端沿着具有半径R的圆弧，所述圆柱滚子被布置成使得它们的中心轴彼此平行地延伸;以及用于在所述基板与所述多个圆柱体中的每一个接触的同时传送所述柔性基板的机构提供滚筒。

93. 发明授权

US06562672B2 Semiconductor material and method for forming the same and thin film transistor 失效
标题翻译：用于形成相同薄膜晶体管的半导体材料和方法
公开(公告)号：US06562672B2
公开(公告)日：2003-05-13
申请号：US09911615
申请日：2001-07-25
申请人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L29/16 , H01L29/78675
摘要： A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译：一种半导体材料及其形成方法，所述半导体材料通过以下步骤制造，所述方法包括：将激光束等效于激光的激光束或高强度光照射到含有碳，氮和氧的非晶硅膜中，浓度为5×1019原子％-3或更低，优选为1×1019原子％-3或更低，而不熔化非晶硅膜。本发明提供了具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管等薄膜半导体器件，从而改善器件特性。

94. 发明授权

US06558991B2 Laser irradiation apparatus and laser irradiation method 有权
公开(公告)号：US06558991B2
公开(公告)日：2003-05-06
申请号：US09930758
申请日：2001-08-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/24 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： Laser annealing is performed by irradiating, while scanning, a semiconductor thin-film with laser light. The laser light that is linear on the irradiation surface is moved in its line-width direction and applied non-continuously. The laser light has, in its line-width direction, an energy density profile that assumes a step-like form in which the energy density varies in a step-like manner. In particular, the scanning pitch D and the step widths Ln are so set as to satisfy a relationship Ln≧D.

95. 发明授权

US06528359B2 Laser annealing method and laser annealing device 有权
公开(公告)号：US06528359B2
公开(公告)日：2003-03-04
申请号：US09796949
申请日：2001-02-27
申请人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
发明人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L2120
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0259 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/67115
摘要： In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.

96. 发明授权

US06494162B1 Method for annealing a semiconductor 失效
标题翻译：半导体退火方法
公开(公告)号：US06494162B1
公开(公告)日：2002-12-17
申请号：US09695413
申请日：2000-10-25
申请人： Hongyong Zhang , Naoto Kusumoto
发明人： Hongyong Zhang , Naoto Kusumoto
IPC分类号： C30B2802
CPC分类号： H01L21/02686 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/2026 , Y10S117/904 , Y10S438/908 , Y10T117/10
摘要： A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
摘要翻译：一种制造半导体器件的方法，包括制备具有至少第一和第二腔室的多室系统，用于形成膜的第一腔室和用激光处理物体的第二腔室; 在所述第一和第二腔室之一中加工衬底; 将衬底转移到第一和第二腔室中的另一个; 以及处理另一个室中的基板，其中第一和第二室可以通过使用闸阀彼此隔离。

97. 发明授权

US06373870B1 Laser irradiation apparatus and laser irradiation method 有权
公开(公告)号：US06373870B1
公开(公告)日：2002-04-16
申请号：US09141763
申请日：1998-08-27
申请人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
IPC分类号： H01S310
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/24 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： Laser annealing is performed by irradiating, while scanning, a semiconductor thin-film with laser light. The laser light that is linear on the irradiation surface is moved in its line-width direction and applied non-continuously. The laser light has, in its line-width direction, an energy density profile that assumes a step-like form in which the energy density varies in a step-like manner. In particular, the scanning pitch D and the step widths Ln are so set as to satisfy a relationship Ln≧D.

98. 发明授权

US06335213B1 Electro-optical device and thin film transistor and method for forming the same 失效
公开(公告)号：US06335213B1
公开(公告)日：2002-01-01
申请号：US09291279
申请日：1999-04-14
申请人： Hongyong Zhang , Naoto Kusumoto
发明人： Hongyong Zhang , Naoto Kusumoto
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , G02F1/13454 , H01L21/02532 , H01L21/2026 , H01L27/1214 , H01L27/1229 , H01L27/1274 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.

99. 发明授权

US06242291B1 Laser annealing method and laser annealing device 失效
标题翻译：激光退火方法和激光退火装置
公开(公告)号：US06242291B1
公开(公告)日：2001-06-05
申请号：US08987573
申请日：1997-12-11
申请人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
发明人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0259 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/67115
摘要： In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
摘要翻译：为了促进半导体膜的激光退火的效果，在向半导体膜照射激光的气氛中有意地包含水分，在该半导体膜中，在半导体膜的表面上形成有包含水蒸气的温度保持层可以有效地进行激光照射和激光退火操作。

100. 发明授权

US6166399A Active matrix device including thin film transistors 失效
标题翻译：有源矩阵器件包括薄膜晶体管
公开(公告)号：US6166399A
公开(公告)日：2000-12-26
申请号：US233143
申请日：1999-01-19
申请人： Hongyong Zhang , Naoto Kusumoto
发明人： Hongyong Zhang , Naoto Kusumoto
IPC分类号： H01L21/265 , G02F1/1362 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/148
CPC分类号： H01L21/02675 , G02F1/13454 , H01L21/02532 , H01L21/2026 , H01L27/1214 , H01L27/1229 , H01L27/1274 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.
摘要翻译：公开了一种制造硅TFT（薄膜晶体管）的方法。该方法包括在器件结构完成之后进行的激光照射的结晶步骤。首先，制造非晶硅TFT。在每个TFT中，沟道形成区域，源极和漏极区域暴露于从衬底上方或下方照射的激光辐射。然后，照射激光辐射以结晶并激活沟道形成区域，以及源极和漏极区域。在器件结构完成之后，控制TFT的各种电气特性。此外，非晶TFT可以变成多晶硅TFT。

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