专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US07372154B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07372154B2
公开(公告)日：2008-05-13
申请号：US11000442
申请日：2004-12-01
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L23/48
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

92. 外观设计

USD556093S1 Motor scooter 有权
公开(公告)号：USD556093S1
公开(公告)日：2007-11-27
申请号：US29266119
申请日：2006-09-15
申请人： Jun Tanaka , Witoon Rerksiriwan , Chatchanon Yongram
设计人： Jun Tanaka , Witoon Rerksiriwan , Chatchanon Yongram

93. 发明授权

US07279769B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07279769B2
公开(公告)日：2007-10-09
申请号：US11139002
申请日：2005-05-25
申请人： Norio Ishitsuka , Jun Tanaka , Tomio Iwasaki , Hiroyuki Ohta
发明人： Norio Ishitsuka , Jun Tanaka , Tomio Iwasaki , Hiroyuki Ohta
IPC分类号： H01L29/00 , H01L21/76
CPC分类号： H01L21/823481 , H01L21/02134 , H01L21/02137 , H01L21/02203 , H01L21/3124 , H01L21/31662 , H01L29/7833
摘要： To suppress occurrence of dislocation in a substrate of a semiconductor device at an end portion of a gate electrode. Provided is a semiconductor device having a plurality of element formation regions formed over the main surface of a semiconductor substrate, an element isolation trench located between the element formation regions and having an element isolation insulating film embedded therein, and a gate insulating film, a gate electrode and a plurality of interconnect layers formed thereabove, each formed in the element formation region, wherein the element isolation trench has a thermal oxide film formed between the semiconductor substrate and the element isolation insulating film, and the element isolation film has a great number of micro-pores formed inside thereof and is more porous than the thermal oxide film.
摘要翻译：为了抑制在栅电极的端部处的半导体器件的衬底中的位错的发生。提供了一种半导体器件，其具有形成在半导体衬底的主表面上的多个元件形成区域，位于元件形成区域之间并且具有嵌入元件隔离绝缘膜的元件隔离沟槽，以及栅极绝缘膜，栅极电极和形成在其上的多个互连层，各自形成在元件形成区域中，其中元件隔离沟槽具有形成在半导体衬底和元件隔离绝缘膜之间的热氧化膜，并且元件隔离膜具有大量在其内形成的微孔比热氧化膜多孔。

94. 发明申请

US20070076755A1 Method of reserving network bandwidth resources, and communications system and network device using the same 失效
标题翻译：保留网络带宽资源的方法，以及使用相同的通信系统和网络设备
公开(公告)号：US20070076755A1
公开(公告)日：2007-04-05
申请号：US11393724
申请日：2006-03-31
申请人： Masahiro Sato , Jun Tanaka
发明人： Masahiro Sato , Jun Tanaka
IPC分类号： H04J3/22
CPC分类号： H04L12/42 , H04L47/13 , H04L47/15 , H04L47/70 , H04L47/724 , H04L47/728 , H04L47/829
摘要： A communications system whose bandwidth resources can be used more efficiently by reserving them on an individual path basis. Upon receipt of a bandwidth reservation message, a path setup initiator examines the message and thereby recognizes that the local station device is the egress node of a specified logical network segment. It then consults a topology database to retrieve hop counts of the source station device, which reveals, for example, that a first ringlet has a smaller hop count than a second ringlet. The path setup initiator sends a working path setup message to the ingress network device over the first ringlet, as well as a protection path setup message to the same ingress device over the second ringlet. Upon receipt of those messages, a bandwidth reservation unit reserves a working path bandwidth on the second ringlet, as well as a protection path bandwidth on the first ringlet.
摘要翻译：一种通信系统，其带宽资源可以通过在各个路径上保留来更有效地使用。在接收到带宽预留消息时，路径建立启动器检查该消息，从而识别出本地站设备是指定逻辑网段的出口节点。然后，它咨询拓扑数据库以检索源站设备的跳数，其例如揭示了第一个小环具有比第二小环更小的跳数。路径建立启动器通过第一个小环将入口网络设备的工作路径建立消息发送到第二个小环上的相同入口设备的保护路径建立消息。在接收到这些消息时，带宽预留单元保留第二小环上的工作路径带宽以及第一小环上的保护路径带宽。

95. 发明授权

US07186393B2 Complex oxide, and production process therefor and applications thereof 失效
标题翻译：复合氧化物及其制备方法及其应用
公开(公告)号：US07186393B2
公开(公告)日：2007-03-06
申请号：US10717483
申请日：2003-11-21
申请人： Hisao Kogoi , Jun Tanaka , Hiroyuki Hagihara
发明人： Hisao Kogoi , Jun Tanaka , Hiroyuki Hagihara
IPC分类号： C01G9/02
CPC分类号： A61K8/25 , A61K8/0287 , A61K8/27 , A61Q1/02 , A61Q1/12 , A61Q17/04 , C01G9/00 , C01G9/03 , C01P2002/72 , C01P2002/74 , C01P2004/04 , C01P2006/12 , C09C1/04 , C09C1/043
摘要： The present invention relates to a complex oxide having a BET specific surface area of about 10 to about 200 m2/g, comprising zinc oxide as a primary component, containing crystalline structures of both zinc oxide and silica, and exhibiting diffraction peaks in lattice planes (100), (002), and (101), which are X-ray crystallographically specific to diffraction peaks of crystalline zinc oxide, and in a lattice plane (101) which is X-ray crystallographically specific to the diffraction peak of crystalline silica.
摘要翻译：本发明涉及包含氧化锌作为主要成分的氧化锌和二氧化硅的结晶结构的BET比表面积为约10至约200m 2 / g的复合氧化物，并且在晶体平面（100），（002）和（101）中显示衍射峰，它们是结晶氧化锌的衍射峰的晶体学特异性的X射线，以及在作为X射线晶体学特异性的晶格平面（101）到结晶二氧化硅的衍射峰。

96. 发明授权

US07067105B2 Alumina particles, production process thereof, composition comprising the particles and alumina slurry for polishing 失效
标题翻译：氧化铝颗粒，其制备方法，包含颗粒的组合物和用于抛光的氧化铝浆料
公开(公告)号：US07067105B2
公开(公告)日：2006-06-27
申请号：US10179268
申请日：2002-06-26
申请人： Hisao Kogoi , Jun Tanaka , Hayato Yamaya
发明人： Hisao Kogoi , Jun Tanaka , Hayato Yamaya
IPC分类号： C01F7/00
CPC分类号： B82Y30/00 , C01F7/02 , C01F7/302 , C01F7/306 , C01P2002/02 , C01P2002/60 , C01P2004/50 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C01P2006/90 , C09K3/1409 , C09K3/1436 , C09K3/1463
摘要： A process for producing alumina particles, comprising vaporizing aluminum chloride to form an aluminum chloride vaporized gas, which optionally contains an inert gas, and oxidizing the vaporized aluminum chloride with an oxidizing gas to produce alumina particles, wherein the aluminum chloride vaporized gas and the oxidizing gas are introduced into a reactor each at an ejecting flow velocity of about 10 m/sec or more, the ratio of the flow velocity of oxidizing gas to the flow velocity of the aluminum chloride vaporized gas is approximately from 0.2 to less than 10, and the amount of oxidizing gas is about 1 or more times the amount of oxidizing gas necessary for stoichiometrically oxidizing aluminum chloride.
摘要翻译：一种生产氧化铝颗粒的方法，包括将氯化铝蒸发以形成氯化铝汽化气体，其任选地含有惰性气体，并用氧化气体氧化蒸发的氯化铝以产生氧化铝颗粒，其中氯化铝气化气体和氧化气体以约10m / sec以上的喷射流速引入反应器，氧化气体的流速与氯化铝气化气体的流速的比率约为0.2〜小于10，氧化气体的量为化学计量氧化氯化铝所需的氧化气体量的约1倍以上。

97. 发明申请

US20060074173A1 High purity titanium oxide and production process thereof 审中-公开
标题翻译：高纯度氧化钛及其制备方法
公开(公告)号：US20060074173A1
公开(公告)日：2006-04-06
申请号：US10507776
申请日：2003-03-20
申请人： Hisao Kogoi , Jun Tanaka
发明人： Hisao Kogoi , Jun Tanaka
IPC分类号： C01G23/047 , C08K3/22
CPC分类号： B82Y30/00 , A61K8/29 , A61K2800/412 , A61K2800/43 , A61Q19/00 , C01G23/0475 , C01G23/07 , C01P2004/32 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12 , C01P2006/80 , C04B2235/3232 , C04B2235/528 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/549 , C04B2235/72 , C04B2235/724 , C04B2235/726 , C08K3/22 , C08K7/18 , C08K2003/2241 , C09C1/3607 , C09C1/3615 , C09C1/363 , C09C1/3676 , C09C1/3684 , C09D7/61 , C09D7/69 , C09D17/008
摘要： A titanium dioxide characterized by having an average particle size of 5 to 200 μm as measured through laser particle size analysis; having a purity of at least 99.5 mass % as reduced to TiO2; and having an Fe content of 20 mass ppm or less, an Ni content of 20 mass ppm or less, a Cr content of 20 mass ppm or less, an Al content of 20 mass ppm or less, a Zr content of 20 mass ppm or less, an Si content of 40 mass ppm or less, a Cl content of 0.05 mass % or less, and an S content of 50 mass ppm or less. The titanium dioxide is produced by a process comprising bringing titanium dioxide serving as a raw material into a high-temperature flame formed by use of a combustible gas and a combustion-supporting gas, to thereby yield spherical titanium dioxide, characterized in that said raw material titanium dioxide has been produced through a vapor-phase process in which titanium tetrachloride is oxidized with an oxidative gas at high temperature.
摘要翻译：二氧化钛，其特征在于通过激光粒径分析测定的平均粒度为5〜200μm; 纯度至少为99.5质量％，还原为TiO 2; 并且具有20质量ppm以下的Fe含量，20质量ppm以下的Ni含量，20质量ppm以下的Cr含量，20质量ppm以下的Al含量，20质量ppm的Zr含量或 Si含量为40质量ppm以下，Cl含量为0.05质量％以下，S含量为50质量ppm以下。二氧化钛是通过将二氧化钛作为原料进入由可燃性气体和助燃气体形成的高温火焰的方法制造的，从而得到球形二氧化钛，其特征在于，所述原料通过气相法制备了二氧化钛，其中四氯化钛在高温下被氧化气体氧化。

98. 发明申请

US20050093161A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050093161A1
公开(公告)日：2005-05-05
申请号：US11000442
申请日：2004-12-01
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/31 , H01L23/48 , H01L23/52 , H01L23/525 , H01L23/532 , H01L23/58 , H01L31/0328
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

99. 发明授权

US06887816B2 Photocatalyst 失效
标题翻译：光催化剂
公开(公告)号：US06887816B2
公开(公告)日：2005-05-03
申请号：US10028420
申请日：2001-12-28
申请人： Jun Tanaka , Masayuki Sanbayashi , Yoshinori Ueyoshi , Hiroyuki Hagihara
发明人： Jun Tanaka , Masayuki Sanbayashi , Yoshinori Ueyoshi , Hiroyuki Hagihara
IPC分类号： B01J21/06 , B01J27/18 , B01J31/06 , B01J31/26 , B01J35/00 , B01J35/06 , B01J37/02 , C01G23/07 , C09C1/36 , B01J21/00
CPC分类号： B01J31/26 , B01J21/063 , B01J21/066 , B01J27/1806 , B01J31/06 , B01J35/002 , B01J35/004 , B01J35/06 , B01J37/0215 , C01G23/07 , C01P2006/12 , C09C1/3661 , Y10S502/517 , Y10T428/265 , Y10T428/31511 , Y10T428/31855
摘要： When a polybasic acid salt containing at least one species selected from the group consisting of an alkaline earth metal, a transition metal, and Al is caused to be present on the surfaces of titanium dioxide fine particles, there are obtained photocatalytic particles and powder exhibiting sufficient photocatalytic properties when irradiated with light from a light source of low quantity of light. By use of the photo-functional particles and powder, an organic polymer composition, a slurry, a coating agent, and a product having a surface exhibiting photocatalytic property and hydrophilicity are obtained.
摘要翻译：当在二氧化钛细颗粒的表面上存在含有选自碱土金属，过渡金属和Al中的至少一种的多元酸盐时，得到的光催化剂颗粒和表现出足够的粉末用低光量光源照射光时的光催化性能。通过使用光功能性粒子和粉末，得到有机聚合物组合物，浆料，涂布剂和具有表现出光催化性能和亲水性的表面产物。

100. 发明申请

US20050004717A1 Thermal management set-temperature correction for individual system 有权
标题翻译：个别系统的热管理设定温度校正
公开(公告)号：US20050004717A1
公开(公告)日：2005-01-06
申请号：US10863684
申请日：2004-06-08
申请人： Toshiaki Fukushima , Taichiroh Nomura , Shigeru Ohshita , Jun Tanaka
发明人： Toshiaki Fukushima , Taichiroh Nomura , Shigeru Ohshita , Jun Tanaka
IPC分类号： G05D23/19 , G06F1/20 , G05D23/00
CPC分类号： G06F1/20 , G05D23/1931 , G06F1/206
摘要： A system includes a CPU, a stor for storing a process executed for lowering the temperature of the CPU in association with a set temperature, a first temperature sensor for measuring a measurement temperature of a measurement position in the CPU, a second temperature sensor for detecting that a detection position in the CPU has reached a detection temperature, an offset calculator for calculating an offset as a difference between the detection temperature and the measurement temperature, a set temperature corrector for calculating a correction value of the set temperature stored by the temperature control information stor based on the offset, and a temperature control executor for executing the temperature control process in association with the set temperature in the case where the measurement temperature has reached the correction value of the set temperature. System specific thermal management data is stored in a nonvolatile memory for retrieval following system initialization.
摘要翻译：一种系统，包括CPU，用于存储与设定温度相关联地降低CPU的温度的处理的存储器，用于测量CPU中的测量位置的测量温度的第一温度传感器，用于检测CPU的测量位置的测量温度的第一温度传感器 CPU中的检测位置已达到检测温度，偏移计算器用于计算检测温度和测量温度之间的差异的偏移量，设定温度校正器，用于计算由温度控制存储的设定温度的校正值基于偏移量的信息存储，以及温度控制执行器，用于在测量温度达到设定温度的校正值的情况下，与设定温度相关联地执行温度控制处理。系统特定的热管理数据存储在非易失性存储器中，用于在系统初始化之后进行检索。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式