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91. 发明授权

US4728826A MOSFET switch with inductive load 失效
标题翻译：具有感性负载的MOSFET开关
公开(公告)号：US4728826A
公开(公告)日：1988-03-01
申请号：US886576
申请日：1986-07-16
申请人： Josef Einzinger , Christine Fellinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
发明人： Josef Einzinger , Christine Fellinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
IPC分类号： H03K17/04 , H03K17/0412 , H03K17/08 , H03K17/687 , H03K17/695
CPC分类号： H03K17/04123 , H03K17/687
摘要： The voltage peaks occuring upon disconnection of inductive loads are normally attenuated by a by-pass diode connected in parallel with the load. The driving countervoltage is thereby limited to the value of the forward voltage drop of the diode. For a power MOSFET with a source-side inductive load, the driving countervoltage is increased by placing a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFET and the connection of the load which is remote from the power MOSFET. The driving countervoltage at the source now becomes the Zener voltage plus the occuring gate-source voltage of the power MOSFET.
摘要翻译：电感负载断开时出现的电压峰值通常与负载并联连接的旁路二极管衰减。因此驱动逆变电压被限制为二极管正向压降的值。对于具有源极电感负载的功率MOSFET，通过在功率MOSFET的栅极和远离功率MOSFET的负载的连接之间放置附加MOSFET和齐纳二极管的串联连接来提高驱动反电压。源极的驱动反电压现在变成齐纳电压加功率MOSFET的栅极 - 源极电压。

92. 发明授权

US4691129A Drive circuit for a power MOSFET with source-side load 失效
标题翻译：具有源极负载功率MOSFET的驱动电路
公开(公告)号：US4691129A
公开(公告)日：1987-09-01
申请号：US886578
申请日：1986-07-16
申请人： Josef Einzinger , Christine Fellinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
发明人： Josef Einzinger , Christine Fellinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
IPC分类号： H03K17/00 , H03K17/0812 , H03K17/16 , H03K17/687 , G05F1/40 , H02H7/00 , H03K3/01
CPC分类号： H03K17/687 , H03K17/08122 , H03K17/165
摘要： When a power MOSFET operated as a source follower is driven by an electronic switch, an interruption of the connection between ground and the electronic switch may result in the output potential of the electronic switch to change so that the power MOSFET is partially switched on. This causes a considerable amount of power dissipation. Therefore, there is placed between the source and gate electrodes of the MOSFET a depletion MOSFET whose gate is connected to the terminal of the electronic switch intended for connection to ground. Thus, the power MOSFET remains non-conducting upon interruption of the connection between the electronic switch and ground.
摘要翻译：当作为源极跟随器工作的功率MOSFET由电子开关驱动时，接地和电子开关之间的连接中断可能导致电子开关的输出电位发生变化，从而使功率MOSFET部分接通。这导致相当大的功率消耗。因此，放置在MOSFET的源极和栅极电极之间，其栅极连接到用于连接到地的电子开关的端子的耗尽MOSFET。因此，功率MOSFET在电子开关和地之间的连接断开时保持不导通。

93. 发明授权

US4688071A Circuit arrangement comprising a phototransistor 失效
标题翻译：电路装置包括光电晶体管
公开(公告)号：US4688071A
公开(公告)日：1987-08-18
申请号：US663363
申请日：1984-10-22
申请人： Jenoe Tihanyi , Christine Fellinger , Ludwig Leipold
发明人： Jenoe Tihanyi , Christine Fellinger , Ludwig Leipold
IPC分类号： H03K17/78 , H01L27/144 , H01L27/146 , H01L31/10 , H03K17/79 , H03K17/795 , H01L27/02
CPC分类号： H03K17/79 , H01L27/1443 , H03K17/7955 , H01L2224/48091 , H01L2224/4813 , H01L2224/48464 , H01L2924/1301 , H01L2924/13091
摘要： In a circuit arrangement having a phototransistor, in order to increase the inverse voltage strength of the phototransistor, a resistor that carries off the collector-base inverse current generally lies between the base zone and the emitter zone of the phototransistor. This resistor should be as large as possible given illumination in order to increase the current gain. The resistor according to the invention is formed by the drain-source path of an IGFET of depletion type whose gate terminal is at a fixed potential. The IGFET is conductive in the unilluminated condition of the phototransistor. During illumination, its resistance increases given an increasing photocurrent.
摘要翻译：在具有光电晶体管的电路装置中，为了提高光电晶体管的反向电压强度，传导集电极 - 反向电流的电阻通常位于光电晶体管的基极区域和发射极区域之间。为了增加电流增益，该电阻应该尽可能大，以给定照明。根据本发明的电阻器由其栅极端子处于固定电位的耗尽型IGFET的漏极 - 源极路径形成。 IGFET在光电晶体管的未发光状态下是导电的。在照明期间，随着光电流的增加，其电阻增加。

94. 发明授权

US4677325A High voltage MOSFET switch 失效
标题翻译：高压MOSFET开关
公开(公告)号：US4677325A
公开(公告)日：1987-06-30
申请号：US872354
申请日：1986-06-09
申请人： Josef Einzinger , Christine Fellinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
发明人： Josef Einzinger , Christine Fellinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
IPC分类号： H03K17/687 , H03K19/0944 , H03K19/0948 , H03K17/16 , H03K19/094 , H03K19/20
CPC分类号： H03K17/6872 , H03K19/09446 , H03K19/0948
摘要： A switching circuit includes two series-connected MOSFET (1, 6) complementing one another, which are interconnected at the drain terminal of each device. The gate terminal of the MOSFET that is grounded is connected to a control input terminal (E). This gate terminal is also connected to the source terminal of a depletion FET (7). The drain terminal of the depletion FET (7) is connected to the gate terminal of the second MOSFET (6) and, in turn, is connected via a resistor (8) to a voltage source (+U). The gate terminal of the depletion FET (7) is grounded. The load (5) is then connected to the drain side of the complementary MOSFET. When the switch is in a blocking condition, the cross current is thus prevented from flowing; and the FET connected to voltage can be completely activated.
摘要翻译：开关电路包括彼此互补的两个串联连接的MOSFET（1,6），它们在每个器件的漏极端子处互连。接地的MOSFET的栅极端子连接到控制输入端子（E）。该栅极端子也连接到耗尽FET（7）的源极端子。耗尽FET（7）的漏极端子连接到第二MOSFET（6）的栅极端子，并且又通过电阻器（8）连接到电压源（+ U）。耗尽FET（7）的栅极端子接地。负载（5）然后连接到互补MOSFET的漏极侧。当开关处于阻塞状态时，防止交叉电流流动; 连接到电压的FET可以被完全激活。

95. 发明授权

US4578596A Circuit arrangement for driving a thyristor with a phototransistor 失效
标题翻译：用光电晶体管驱动晶闸管的电路布置
公开(公告)号：US4578596A
公开(公告)日：1986-03-25
申请号：US664380
申请日：1984-10-24
申请人： Jenoe Tihanyi , Christine Fellinger , Ludwig Leipold
发明人： Jenoe Tihanyi , Christine Fellinger , Ludwig Leipold
IPC分类号： H03K17/16 , H01L27/144 , H01L29/74 , H03K17/082 , H03K17/725 , H03K17/78 , H03K17/79 , H03K17/60 , H03K3/45 , H03K17/687
CPC分类号： H03K17/79 , H01L27/1443 , H03K17/0826 , Y10T307/773
摘要： In a circuit arrangement for drive of a thyristor with a phototransistor, the collector-emitter path of the phototransistor is between one of two alternating voltage terminals and a gate terminal of the thyristor. In order to prevent an activation of the unilluminated phototransistor due to a steep voltage edge (dv/dt) load), its base current given such a load is carried off via an IGFET of the enhancement type. This IGFET is controlled by an IGFET of the depletion type acting as a current source which lies between a gate terminal and source terminal of the enhancement type IGFET. A capacitor is connected in series with the depletion-type IGFET. This series connection lies between the two alternating voltage terminals.
摘要翻译：在用光电晶体管驱动晶闸管的电路装置中，光电晶体管的集电极 - 发射极路径位于两个交流电压端子之一和晶闸管的栅极端子之间。为了防止由于陡峭的电压边缘（dv / dt）负载引起的未发光的光电晶体管的激活），通过增强型的IGFET，提供给予这样的负载的基极电流。该IGFET由作为增强型IGFET的栅极端子和源极端子之间的电流源的耗尽型IGFET控制。电容器与耗尽型IGFET串联连接。该串联连接在两个交流电压端子之间。

96. 发明授权

US4247860A MIS Field effect transistor for high source-drain voltages 失效
标题翻译： MIS场效应晶体管用于高源极 - 漏极电压
公开(公告)号：US4247860A
公开(公告)日：1981-01-27
申请号：US873234
申请日：1978-01-30
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L29/10 , H01L29/423 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78624 , H01L29/105 , H01L29/1083 , H01L29/42368 , H01L29/42384 , H01L29/78
摘要： A MIS field effect transistor of the depletion type having source, drain and channel regions of a first conductivity type formed in a substrate of the second conductivity type. A gate electrode is formed on an insulating layer above the channel. The spacing between the channel and the gate electrode increases between the source and the drain. This increase in spacing may be a continuous increase in the direction of the drain or may be a series of steps. A circuit arrangement is described where a plurality of these depletion MIS field effect transistors of the above type are serially connected with the source of the first of these depletion type transistors, connected to the drain of a preceding enhancement type MIS field effect transistor.
摘要翻译：一种耗尽型MIS场效应晶体管，其具有形成在第二导电类型的衬底中的第一导电类型的源极，漏极和沟道区。栅极电极形成在通道上方的绝缘层上。沟道和栅电极之间的间距在源极和漏极之间增加。间隔的这种增加可以是排水方向上的连续增加，或者可以是一系列步骤。描述了一种电路装置，其中上述类型的多个这些耗尽MIS场效应晶体管与连接到先前增强型MIS场效应晶体管的漏极的这些耗尽型晶体管中的第一个的源极串联连接。

97. 发明授权

US4242603A Dynamic storage element 失效
标题翻译：动态存储元件
公开(公告)号：US4242603A
公开(公告)日：1980-12-30
申请号：US907013
申请日：1978-05-18
申请人： Guenther Meusburger , Karl Knauer , Jenoe Tihanyi
发明人： Guenther Meusburger , Karl Knauer , Jenoe Tihanyi
IPC分类号： H01L27/108 , G11C11/34 , G11C11/35 , H01L21/8242 , H01L29/10 , H01L29/78 , H01L27/04
CPC分类号： H01L29/78 , G11C11/34 , G11C11/35 , H01L29/1033
摘要： A dynamic storage element has an electrically insulating layer carried on a substrate of semiconductor material. A conductor path, provided with a terminal, is arranged on the electrically insulating layer, and first and second zones, doped oppositely to the substrate, are provided on the surface of the substrate. The zones are spaced from one another. In that region of the substrate between the zones the substrate is more highly doped with dopants of the same type as those contained in the substrate and the conductor path extends above the highly doped region.
摘要翻译：动态存储元件具有承载在半导体材料的衬底上的电绝缘层。设置有端子的导体路径设置在电绝缘层上，并且在衬底的表面上设置与衬底相反掺杂的第一和第二区域。这些区域彼此间隔开。在这些区域之间的衬底的该区域中，衬底更加掺杂与衬底中包含的掺杂物相同类型的掺杂剂，并且导体路径在高掺杂区域上方延伸。

98. 发明授权

US4101922A Field effect transistor with a short channel length 失效
标题翻译：具有短通道长度的场效应晶体管
公开(公告)号：US4101922A
公开(公告)日：1978-07-18
申请号：US775978
申请日：1977-03-09
申请人： Jenoe Tihanyi , Voachim Hoepfner
发明人： Jenoe Tihanyi , Voachim Hoepfner
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/7827
摘要： A field effect transistor with a MIS gate arrangement having a source and drain formed in a semiconductor body and including an electrically conductive region additionally provided which lies beneath the source zone and which has a conductivity opposite to and/or electrical conductivity which is higher than the semiconductor body which surrounds the zone and in which in the controllable field effect gate the electrically conductive zone is spaced a distance from the gate and the boundary surface and wherein the gate insulation layer projects laterally a space relative to the source zone which is approximately 1 to 10 times the thickness of the gate insulation layer and the distance from the gate arrangement to the boundary surface is 1 to 5 times the thickness.

99. 发明授权

US07423325B2 Lateral field-effect-controllable semiconductor component for RF applications 有权
标题翻译：用于RF应用的横向场效应可控半导体元件
公开(公告)号：US07423325B2
公开(公告)日：2008-09-09
申请号：US10806958
申请日：2004-03-23
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/7825 , H01L29/7832 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor component. The component includes a semiconductor body with a first semiconductor layer of a first conduction type and a second semiconductor layer of a second conduction type. The component includes, in the second semiconductor layer, a first terminal zone of the second conduction type, a drift zone of the second conduction type, a channel zone of the first conduction type, which is formed between the first terminal zone and the drift zone, and a second terminal zone of the second conduction type, which is arranged at a distance from the channel zone in the lateral direction of the semiconductor body. The component also includes a first drive electrode and at least one second drive electrode.
摘要翻译：本发明涉及一种半导体元件。该部件包括具有第一导电类型的第一半导体层和第二导电类型的第二半导体层的半导体本体。该部件在第二半导体层中包括第二导电类型的第一端子区，第二导电类型的漂移区，第一导电类型的沟道区，形成在第一端子区和漂移区之间以及第二导电类型的第二端子区，其布置在半导体主体的横向方向上与沟道区一定距离处。该部件还包括第一驱动电极和至少一个第二驱动电极。

100. 发明授权

US07211846B2 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage 有权
标题翻译：晶体管具有能够实现低导通电阻和高反向电压的补偿区域
公开(公告)号：US07211846B2
公开(公告)日：2007-05-01
申请号：US10704259
申请日：2003-11-07
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/402 , H01L29/404 , H01L29/7809 , H01L29/7823
摘要： A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel zone of the first conduction type is formed in the first layer. A first terminal zone of the second conduction type is configured adjacent the channel zone. A second terminal zone of the first conduction type is formed in the first layer. Compensation zones of the first conduction type are formed in the first layer.
摘要翻译：半导体部件包括半导体本体，其具有位于基板上方的具有第一导电类型的基板和第二导电类型的第一层。在第一层中形成第一导电类型的沟道区。第二导电类型的第一端子区域被配置为邻近沟道区域。在第一层中形成第一导电类型的第二端区。第一导电类型的补偿区形成在第一层中。

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