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91. 发明授权

US07609584B2 Latency control circuit and method thereof and an auto-precharge control circuit and method thereof 失效
标题翻译：延迟控制电路及其方法和自动预充电控制电路及其方法
公开(公告)号：US07609584B2
公开(公告)日：2009-10-27
申请号：US11594807
申请日：2006-11-09
申请人： Joung-Yeal Kim , Seong-Jin Jang , Kyoung-Ho Kim , Sam-Young Bang , Reum Oh
发明人： Joung-Yeal Kim , Seong-Jin Jang , Kyoung-Ho Kim , Sam-Young Bang , Reum Oh
IPC分类号： G11C8/00
CPC分类号： G11C8/10 , G11C7/1027 , G11C7/1045 , G11C7/1066 , G11C7/12 , G11C7/22 , G11C8/12 , G11C11/4076 , G11C11/4094
摘要： A latency control circuit and method thereof and auto-precharge control circuit and method thereof are provided. The example latency control circuit may include a master unit activating at least one master signal based on a reference signal and an internal clock signal and a plurality of slave units receiving the at least one master signal, each of the plurality of slave units receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals. The example method of latency control may include receiving at least one master signal, the received at least one master signal activated based on a reference signal and an internal clock signal and receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals and latency information. The example auto-precharge control circuit may include a precharge command delay unit generating a plurality of first precharge command delay signals in response to an internal clock signal and a write auto-precharge command signal, at least one bank address delay unit outputting a delayed bank address signal and a precharge main signal generator outputting a precharge main signal to banks based on the delayed bank address signal. The method of performing a precharging operation with the auto-precharge control circuit may include delaying a bank address signal based on a minimum time interval between executed memory commands and outputting a precharge main signal to one or more memory banks based on the delayed bank address signal.
摘要翻译：提供了一种延迟控制电路及其方法和自动预充电控制电路及其方法。示例性延迟控制电路可以包括基于参考信号和内部时钟信号来激活至少一个主信号的主单元和接收至少一个主信号的多个从单元，多个从单元中的每一个接收多个并且至少部分地基于所接收的多个信号之一输出输出信号。等待时间控制的示例性方法可以包括：接收至少一个主信号，基于参考信号激活的所接收的至少一个主信号和内部时钟信号，并且接收多个信号并且至少部分地基于所接收的多个信号和延迟信息中的一个。示例性自动预充电控制电路可以包括预充电命令延迟单元，其响应于内部时钟信号和写自动预充电命令信号产生多个第一预充电命令延迟信号，至少一个存储体地址延迟单元输出延迟存储体地址信号和预充电主信号发生器基于延迟的存储体地址信号向存储体输出预充电主信号。利用自动预充电控制电路执行预充电操作的方法可以包括基于执行的存储器命令之间的最小时间间隔来延迟存储体地址信号，并且基于延迟的存储体地址信号向一个或多个存储器组输出预充电主信号。

92. 发明授权

US07546497B2 Semiconductor memory device and data write and read method thereof 有权
标题翻译：半导体存储器件及其数据写入和读取方法
公开(公告)号：US07546497B2
公开(公告)日：2009-06-09
申请号：US11419155
申请日：2006-05-18
申请人： Seong-Jin Jang
发明人： Seong-Jin Jang
IPC分类号： G11C29/34 , G11C29/50
CPC分类号： G11C29/14 , G11C29/12015 , G11C29/32
摘要： A semiconductor memory device includes a serial to parallel converter configured to generate parallel data at a parallel data rate in response to first serial data at first serial data rate in a first mode and configured to generate the parallel data at the parallel data rate in response to a second serial data at second serial data rate in a second mode, wherein the second serial data rate is less than the first serial data rate, and a data write circuit configured to provide the parallel data to a memory cell array.
摘要翻译：半导体存储器件包括串行到并行转换器，其被配置为响应于处于第一模式的第一串行数据速率的第一串行数据以并行数据速率产生并行数据，并且被配置为响应于并行数据速率以并行数据速率生成并行数据以第二模式的第二串行数据速率的第二串行数据，其中所述第二串行数据速率小于所述第一串行数据速率，以及数据写入电路，被配置为将并行数据提供给存储器单元阵列。

93. 发明授权

US07541947B2 Semiconductor devices, a system including semiconductor devices and methods thereof 有权
公开(公告)号：US07541947B2
公开(公告)日：2009-06-02
申请号：US11802886
申请日：2007-05-25
申请人： Seung-Jun Bae , Seong-Jin Jang , Kwang-II Park , Woo-Jin Lee
发明人： Seung-Jun Bae , Seong-Jin Jang , Kwang-II Park , Woo-Jin Lee
IPC分类号： H03M7/00
CPC分类号： H03K19/00346 , H04L25/03866 , H04L25/14 , H04L25/4908
摘要： Semiconductor devices, a system including said semiconductor devices and methods thereof are provided. An example semiconductor device may receive data scheduled for transmission, scramble an order of bits within the received data, the scrambled order arranged in accordance with a given pseudo-random sequence. The received data may be balanced such that a difference between a first number of the bits within the received data equal to a first logic level and a second number of bits within the received data equal to a second logic level is below a threshold. The balanced and scrambled received data may then be transmitted. The example semiconductor device may perform the scrambling and balancing operations in any order. Likewise, on a receiving end, another semiconductor device may decode the original data by unscrambling and unbalancing the transmitted data. The unscrambling and unbalancing operations may be performed in an order based upon the order in which the transmitted data is scrambled and balanced.

94. 发明授权

US07525345B2 Swing limiter 失效
标题翻译：摆动限制器
公开(公告)号：US07525345B2
公开(公告)日：2009-04-28
申请号：US11503802
申请日：2006-08-14
申请人： Seong-Jin Jang
发明人： Seong-Jin Jang
IPC分类号： H03K19/094 , H03K19/0175
CPC分类号： H03K19/01707 , H03K19/0013
摘要： A swing limiter comprises a logic circuit including a first pull-up transistor and a first pull-down transistor connected between first and second nodes and which generate an output signal; a second pull-up transistor connected between a first power voltage and the first node; a second pull-down transistor connected between the second node and a second power voltage; a first control voltage generator connected between a high voltage which is higher than the first power voltage and a first reference voltage which is lower than the high voltage; and a second control voltage generator connected between a low voltage which is lower than the second power voltage and a second reference voltage which is higher than the low voltage.
摘要翻译：摆动限制器包括逻辑电路，该逻辑电路包括连接在第一和第二节点之间并产生输出信号的第一上拉晶体管和第一下拉晶体管; 连接在第一电源电压和第一节点之间的第二上拉晶体管; 连接在第二节点和第二电源电压之间的第二下拉晶体管; 连接在高于第一电源电压的高电压和低于高电压的第一参考电压之间的第一控制电压发生器; 以及第二控制电压发生器，其连接在低于所述第二电力电压的低电压和高于所述低电压的第二参考电压。

95. 发明授权

US07403040B2 Reference voltage generators for reducing and/or eliminating termination mismatch 有权
标题翻译：用于减少和/或消除终止失配的参考电压发生器
公开(公告)号：US07403040B2
公开(公告)日：2008-07-22
申请号：US11790014
申请日：2007-04-23
申请人： Kwang-Il Park , Seung-Jun Bae , Seong-Jin Jang
发明人： Kwang-Il Park , Seung-Jun Bae , Seong-Jin Jang
IPC分类号： H03K19/094 , H03K19/0175
CPC分类号： H03K19/017545
摘要： A system including a plurality of transmission lines, a transmitter outputting respective signals to each of the plurality of transmission lines, a receiver receiving each of the plurality of signals via respective transmission lines, the receiver including a connection path connected to a termination voltage, a plurality of termination circuits distributed along the connection path, each termination circuit receiving a unique termination voltage from the connection path, receiving a respective signal and outputting a terminated input signal, a reference voltage generator including multiple reference voltage generator units connected to a common voltage, each reference voltage generator unit uniquely receiving at least one unique termination voltage and outputting a reference voltage, and a plurality of data input buffers receiving respective signals and an appropriate reference voltage of the multiple reference voltages output from the reference voltage generator.
摘要翻译：一种包括多个传输线的系统，向多个传输线中的每一个输出相应信号的发射机，经由各个传输线接收多个信号中的每一个的接收机，所述接收机包括连接到终端电压的连接路径，多个终端电路沿着连接路径分布，每个终端电路从连接路径接收唯一的终端电压，接收相应的信号并输出终止的输入信号;参考电压发生器，包括连接到公共电压的多个参考电压发生器单元，每个参考电压发生器单元独特地接收至少一个唯一的终端电压并输出参考电压，以及多个数据输入缓冲器，其接收相应的信号和从参考电压发生器输出的多个参考电压的适当参考电压。

96. 发明申请

US20080019451A1 CIRCUITS AND METHODS FOR DATA BUS INVERSION IN A SEMICONDUCTOR MEMORY 有权
标题翻译：半导体存储器中数据总线反相的电路和方法
公开(公告)号：US20080019451A1
公开(公告)日：2008-01-24
申请号：US11863604
申请日：2007-09-28
申请人： Seong-Jin Jang , Jeong-Don Lim
发明人： Seong-Jin Jang , Jeong-Don Lim
IPC分类号： H04L27/00
CPC分类号： G11C7/1006 , G06F7/501 , G11C7/1048 , G11C7/1051 , G11C7/106 , G11C7/1069 , G11C2207/108
摘要： A data bus inversion (DBI) circuit includes at least one DBI block configured to invert an input data signal based on the logic state of input data bits. The DBI block includes a comparison deciding unit configured to generate, in a first mode, a comparison signal based on the number of changed bits by comparing respective bit signals of the input data signal and a previous input data signal. The comparison deciding unit generates an inversion control signal which controls whether the input data will be inverted or not. In a second mode, the comparison deciding unit generates an inversion control signal based on the predominant logic state of the input data signal bits. A data converting unit is configured to invert the input data signal in response to the inversion control signal. Method embodiments are also disclosed.
摘要翻译：数据总线反转（DBI）电路包括至少一个DBI块，其被配置为基于输入数据位的逻辑状态反转输入数据信号。 DBI块包括比较判定单元，该比较判定单元被配置为通过比较输入数据信号和先前输入数据信号的各个比特信号，在第一模式中，基于改变的比特数来生成比较信号。比较判定单元生成控制输入数据是否反转的反转控制信号。在第二模式中，比较判定单元根据输入数据信号位的主要逻辑状态生成反转控制信号。数据转换单元被配置为响应于反转控制信号来反转输入数据信号。还公开了方法实施例。

97. 发明申请

US20070297552A1 Semiconductor device, a parallel interface system and methods thereof 有权
标题翻译：半导体器件，并行接口系统及其方法
公开(公告)号：US20070297552A1
公开(公告)日：2007-12-27
申请号：US11812438
申请日：2007-06-19
申请人： Seung-Jun Bae , Seong-Jin Jang , Beom-Sig Cho
发明人： Seung-Jun Bae , Seong-Jin Jang , Beom-Sig Cho
IPC分类号： H04L7/00
CPC分类号： G11C7/22 , H03K19/0966 , H04L7/0008 , H04L7/033 , H04L7/10
摘要： A semiconductor device, a parallel interface system and methods thereof are provided. The example semiconductor device may include a reference clock transmitting block generating a reference clock signal, a plurality of first transceiver blocks, each of the plurality of first transceiver blocks transmitting at least one parallel data bit signal based on one of a plurality of phase-controlled transmitting sampling clock signals and a per-pin deskew block controlling a phase of a transmitting sampling clock signal to generate the phase-controlled sampling clock signals for the respective plurality of transceiver blocks, the per-pin deskew block controlling the phase of each phase-controlled transmitting sampling clock signal based on a phase skew between a given training data bit signal, among a plurality of training data bit signals, corresponding to a given first transceiver block and the reference clock signal in a first operation mode, and based on phase skew information relating to a phase skew between a given parallel data bit signal of the at least one parallel data bit signal and the reference clock signal in a second operation mode. An example method may include reducing skew based on a comparison between a plurality of transmitted training data bit signals and a corresponding plurality of received training data bit signals in a first mode of operation and reducing skew based on received phase skew information relating to a phase skew difference between a reference signal and a parallel data bit signal in a second mode of operation.
摘要翻译：提供半导体器件，并行接口系统及其方法。示例性半导体器件可以包括产生参考时钟信号的参考时钟发送块，多个第一收发器块，多个第一收发器块中的每一个基于多个相位控制的多个第一收发器块中的一个发送至少一个并行数据位信号传输采样时钟信号和控制发射采样时钟信号的相位的每引脚偏移校正块，以产生相应的多个收发器模块的相位控制的采样时钟信号，每个引脚的去偏移块控制每个相位 - 基于相对于给定的第一收发器块的多个训练数据位信号中的给定训练数据位信号与第一操作模式中的参考时钟信号之间的相位偏移以及基于相位偏移的受控发送采样时钟信号与至少一个并行数据的给定并行数据位信号之间的相位偏移有关的信息在第二操作模式中的位信号和参考时钟信号。示例性方法可以包括基于在第一操作模式中的多个发送的训练数据比特信号与对应的多个接收的训练数据比特信号之间的比较来减少偏斜，并且基于接收到的相位偏移相关的相位偏移信息减少偏斜在第二操作模式中参考信号和并行数据位信号之间的差异。

98. 发明授权

US07269699B2 Method and memory system having mode selection between dual data strobe mode and single data strobe mode with inversion 有权
标题翻译：方法和存储器系统具有双数据选通模式和单反数据选通模式之间的模式选择
公开(公告)号：US07269699B2
公开(公告)日：2007-09-11
申请号：US10733413
申请日：2003-12-12
申请人： Seong-Jin Jang
发明人： Seong-Jin Jang
IPC分类号： G06F12/00 , G11C7/00
CPC分类号： G11C7/1006 , G11C7/1045 , G11C7/1075
摘要： A memory system and a method of reading and writing data to a memory device selectively operate in both a single DQS mode with data inversion, and in a dual DQS mode. The device and method employ data strobe mode changing means for selectively changing operation of the memory device between a first data strobe mode and a second data strobe mode.
摘要翻译：存储器系统和将数据读取和写入到存储器件的方法选择性地在具有数据反转的单个DQS模式中操作，并且以双DQS模式操作。该装置和方法采用数据选通模式改变装置，用于在第一数据选通模式和第二数据选通模式之间选择性地改变存储装置的操作。

99. 发明申请

US20070115751A1 Latency control circuit and method thereof and an auto-precharge control circuit and method thereof 失效
标题翻译：延迟控制电路及其方法和自动预充电控制电路及其方法
公开(公告)号：US20070115751A1
公开(公告)日：2007-05-24
申请号：US11594807
申请日：2006-11-09
申请人： Joung-Yeol Kim , Seong-Jin Jang , Kyoung-Ho Kim , Sam-Young Bang , Reum Oh
发明人： Joung-Yeol Kim , Seong-Jin Jang , Kyoung-Ho Kim , Sam-Young Bang , Reum Oh
IPC分类号： G11C8/00
CPC分类号： G11C8/10 , G11C7/1027 , G11C7/1045 , G11C7/1066 , G11C7/12 , G11C7/22 , G11C8/12 , G11C11/4076 , G11C11/4094
摘要： A latency control circuit and method thereof and auto-precharge control circuit and method thereof are provided. The example latency control circuit may include a master unit activating at least one master signal based on a reference signal and an internal clock signal and a plurality of slave units receiving the at least one master signal, each of the plurality of slave units receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals. The example method of latency control may include receiving at least one master signal, the received at least one master signal activated based on a reference signal and an internal clock signal and receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals and latency information. The example auto-precharge control circuit may include a precharge command delay unit generating a plurality of first precharge command delay signals in response to an internal clock signal and a write auto-precharge command signal, at least one bank address delay unit outputting a delayed bank address signal and a precharge main signal generator outputting a precharge main signal to banks based on the delayed bank address signal. The method of performing a precharging operation with the auto-precharge control circuit may include delaying a bank address signal based on a minimum time interval between executed memory commands and outputting a precharge main signal to one or more memory banks based on the delayed bank address signal.
摘要翻译：提供了一种延迟控制电路及其方法和自动预充电控制电路及其方法。示例性延迟控制电路可以包括基于参考信号和内部时钟信号来激活至少一个主信号的主单元和接收至少一个主信号的多个从单元，多个从单元中的每一个接收多个并且至少部分地基于所接收的多个信号中的一个来输出输出信号。等待时间控制的示例性方法可以包括：接收至少一个主信号，基于参考信号激活的所接收的至少一个主信号和内部时钟信号，并且接收多个信号并且至少部分地基于所接收的多个信号和延迟信息中的一个。示例性自动预充电控制电路可以包括预充电命令延迟单元，其响应于内部时钟信号和写自动预充电命令信号产生多个第一预充电命令延迟信号，至少一个存储体地址延迟单元输出延迟存储体地址信号和预充电主信号发生器基于延迟的存储体地址信号向存储体输出预充电主信号。利用自动预充电控制电路执行预充电操作的方法可以包括基于执行的存储器命令之间的最小时间间隔来延迟存储体地址信号，并且基于延迟的存储体地址信号向一个或多个存储器组输出预充电主信号。

100. 发明申请

US20070069788A1 Output circuit of a semiconductor memory device and method of outputting data in a semiconductor memory device 有权
标题翻译：半导体存储器件的输出电路和在半导体存储器件中输出数据的方法
公开(公告)号：US20070069788A1
公开(公告)日：2007-03-29
申请号：US11519252
申请日：2006-09-12
申请人： Kyoung-Ho Kim , Seong-Jin Jang , Joung-Yeal Kim
发明人： Kyoung-Ho Kim , Seong-Jin Jang , Joung-Yeal Kim
IPC分类号： H03K3/00
CPC分类号： G11C7/1039 , G11C7/1051 , G11C7/106 , H03K3/356156
摘要： An output circuit of a semiconductor memory device includes a first data path, a second data path and a third data path. The first data path transfers a sense output signal, and latches the sense output signal to output the sense output signal to a first node. The second data path transfers the sense output signal, and latches the sense output signal to output the sense output signal to the first node. The third data path latches a signal of the first node, and transfers the signal of the first node to generate output data. Accordingly, the semiconductor memory device including the output circuit can operate at a relatively higher frequency using a pseudo-pipeline structured circuit, which combines a wave pipeline structure with a full pipeline structure.
摘要翻译：半导体存储器件的输出电路包括第一数据路径，第二数据路径和第三数据路径。第一数据路径传送感测输出信号，并锁存感测输出信号以将感测输出信号输出到第一节点。第二数据路径传送感测输出信号，并锁存感测输出信号以将感测输出信号输出到第一节点。第三数据路径锁存第一节点的信号，并传送第一节点的信号以产生输出数据。因此，包括输出电路的半导体存储器件可以使用将波形管线结构与完整管线结构组合在一起的伪流水线结构化电路以相对较高的频率工作。

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