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91. 发明申请

US20100136766A1 WORKING METHOD FOR CUTTING 有权
标题翻译：切割工作方法
公开(公告)号：US20100136766A1
公开(公告)日：2010-06-03
申请号：US12601090
申请日：2008-05-23
申请人： Takeshi Sakamoto , Hideki Shimoi , Naoki Uchiyama
发明人： Takeshi Sakamoto , Hideki Shimoi , Naoki Uchiyama
IPC分类号： H01L21/78
CPC分类号： B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L21/67132 , H01L21/78
摘要： An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.
摘要翻译：待切割的物体沿切割线可靠切割。在将会聚点定位在物体的同时用激光照射待处理物体，以沿着切割线在物体中形成改质区域。用改性区域形成的物体经受蚀刻处理，利用对修饰区域表现出比对于未改性区域更高的蚀刻速率的蚀刻液体，以蚀刻修饰区域。这可以通过在改质区域中利用较高的蚀刻速率沿切割线选择性地和快速地蚀刻物体。

92. 发明申请

US20070040096A1 Photodetector using photomultiplier and gain control method 有权
标题翻译：光电检测器采用光电倍增管和增益控制方式
公开(公告)号：US20070040096A1
公开(公告)日：2007-02-22
申请号：US11506204
申请日：2006-08-18
申请人： Hisaki Kato , Hideki Shimoi , Kazuya Horiuchi , Toshiaki Ushizu
发明人： Hisaki Kato , Hideki Shimoi , Kazuya Horiuchi , Toshiaki Ushizu
IPC分类号： H01J40/14
CPC分类号： H01J43/22 , H01J40/14 , H01J43/045
摘要： The present invention relates to a photodetector that has a structure capable of realizing a wide range gain adjustment for each of electron multiplier channels respectively assigned to a plurality of light incidence regions of a multi-anode multiplier. The photodetector comprises a multi-anode photomultiplier, and a bleeder circuit unit. The multi-anode multiplier has a dynode unit constituted by N (an integer or no less than 3) dynode plates, and n-th (an integer of no less then 2) dynode plate is constituted by a plurality of control plates respectively corresponding to the multiplier channels. The bleeder circuit unit has a primary section setting each potential of a first to (n−1)-th and (n+1)-th to N-th dynode plates, and a secondary section for individually setting a potential of each control plate at any potential within the range wider than a potential difference between the (n−1)-th and (n+1) dynode plates. By expanding the potential setting range for the control plates rather than the potential difference between the dynode plates adjacent to the n-th dynode plate, the gain of each electron multiplier channel can be controlled by two digits or more.
摘要翻译：本发明涉及一种具有能够实现对分别分配给多阳极倍增器的多个入射区域的每个电子倍增器通道的宽范围增益调整的结构的光电检测器。光电检测器包括多阳极光电倍增管和泄放电路单元。多阳极倍增器具有由N（整数或不小于3）倍增极板构成的倍增电极单元，并且第n（不小于2的整数）倍增极板由分别对应于乘数通道。泄放电路单元具有设定第一至第（n-1）和第（n + 1）至第N倍增电极板的每个电位的初级部分，以及用于单独设置每个控制板的电位的次级部分在比第（n-1）和（n + 1）倍增极板之间的电位差宽的范围内的任何电位。通过扩大控制板的电位设置范围，而不是与第n倍增极板相邻的倍增极板之间的电位差，每个电子倍增器通道的增益可以被控制在两位以上。

93. 发明授权

US09302410B2 Method for cutting object to be processed 有权
标题翻译：切割待处理物体的方法
公开(公告)号：US09302410B2
公开(公告)日：2016-04-05
申请号：US13383487
申请日：2010-07-21
申请人： Hideki Shimoi , Naoki Uchiyama , Daisuke Kawaguchi
发明人： Hideki Shimoi , Naoki Uchiyama , Daisuke Kawaguchi
IPC分类号： B32B38/04 , B28D5/00 , B23K26/00 , H01L21/78 , B23K26/40
CPC分类号： B32B37/06 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/00 , B28D5/0011 , B32B38/0004 , H01L21/78 , Y10T29/49002 , Y10T29/49787 , Y10T156/1052
摘要： A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.
摘要翻译：硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与硅衬底12）。这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

94. 发明授权

US08802544B2 Method for manufacturing chip including a functional device formed on a substrate 有权
标题翻译：一种制造芯片的方法，其包括形成在基板上的功能元件
公开(公告)号：US08802544B2
公开(公告)日：2014-08-12
申请号：US13389053
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L21/7806
摘要： A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate.
摘要翻译：由形成在基板上的功能元件构成的芯片的制造方法包括功能元件形成步骤，在由硅制成的被加工片状物体的一个主面上形成功能元件; 第一改质区域形成步骤，使激光在物体处会聚，以便沿着与该基板的厚度对应的预定深度从该主面形成沿物体的一个主面的第一改质区域; 第二改质区域形成步骤，将激光会聚在物体上，以形成第二改质区域，该第二改质区域从物体的一个主面侧的一个主面看，对应于基板的侧缘延伸使得所述第二改质区域沿着所述物体的厚度方向与所述第一改质区域连接; 以及蚀刻步骤，在第一和第二改质区域形成步骤之后沿着第一和第二改质区选择性地进行蚀刻，以便切割出物体的一部分并形成衬底。

95. 发明授权

US08741777B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08741777B2
公开(公告)日：2014-06-03
申请号：US13389288
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/302
CPC分类号： B23K26/064 , B23K26/0006 , B23K26/0736 , B23K26/382 , B23K26/384 , B23K26/40 , B23K26/53 , B23K26/55 , B23K2103/50 , B23K2103/56 , H01L21/30608 , H01L21/76898
摘要： A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line.
摘要翻译：在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的并且构建包含修饰斑点的改性区域，以及第二步骤，各向异性地蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成小于45°的角度，并且将修改的光点对准沿着线的多行。

96. 发明授权

US08603351B2 Working method for cutting 有权
标题翻译：切割工作方法
公开(公告)号：US08603351B2
公开(公告)日：2013-12-10
申请号：US12601090
申请日：2008-05-23
申请人： Takeshi Sakamoto , Hideki Shimoi , Naoki Uchiyama
发明人： Takeshi Sakamoto , Hideki Shimoi , Naoki Uchiyama
IPC分类号： B44C1/22
CPC分类号： B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L21/67132 , H01L21/78
摘要： An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.
摘要翻译：待切割的物体沿切割线可靠切割。在将会聚点定位在物体的同时用激光照射待处理物体，以沿着切割线在物体中形成改质区域。用改性区域形成的物体经受蚀刻处理，利用对修饰区域表现出比对于未改性区域更高的蚀刻速率的蚀刻液体，以蚀刻修饰区域。这可以通过在改质区域中利用较高的蚀刻速率沿切割线选择性地和快速地蚀刻物体。

97. 发明授权

US08541319B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08541319B2
公开(公告)日：2013-09-24
申请号：US13388716
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/268
CPC分类号： H01L21/30608 , B23K26/0006 , B23K26/382 , B23K26/384 , B23K26/40 , B23K26/53 , B23K26/55 , B23K2103/50 , B23K2103/56 , H01L21/486 , H01L23/49827
摘要： A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness.
摘要翻译：一种激光加工方法，其特征在于，包括：激光收敛步骤，使激光在由硅制成的待加工的片状物体上会聚，以在物体内形成改质区域;以及蚀刻工序，对所述物体进行各向异性蚀刻，将物体变薄到目标厚度，并且沿着改质区域选择性地推进蚀刻，以便在激光聚光步骤之后形成具有相对于物体的厚度方向倾斜的通孔的物体，其中激光聚光步骤形成作为与物体中的通孔对应的部分中的改质区域的第一改质区域和作为改变区域的第二改质区域，其平行于厚度方向延伸，并且在变薄的部分中与第一改质区域连接，该物体中的各向异性蚀刻，并且其中蚀刻步骤沿着第二改质区选择性地前进蚀刻，然后沿着该fi 第一修改区域，同时使物体变薄，并在物体处于目标厚度时完成形成通孔。

98. 发明申请

US20120142186A1 METHOD FOR MANUFACTURING INTERPOSER 有权
标题翻译：制造中间件的方法
公开(公告)号：US20120142186A1
公开(公告)日：2012-06-07
申请号：US13389050
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/768
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/0622 , B23K26/53 , B23K26/55 , B23K2101/40 , B23K2103/56 , H01L21/30608 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K3/002 , H05K2203/107 , H01L2924/00
摘要： A method for manufacturing an interposer equipped with a plurality of through-hole electrodes comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region in the object; an etching step of anisotropically etching the object after the laser light converging step so as to advance etching selectively along the modified region and form a plurality of through holes in the object, each through hole being tilted with respect to a thickness direction of the object and having a rectangular cross section; an insulating film forming step of forming an insulating film on an inner wall of each through hole after the etching step; and a through-hole electrode forming step of inserting a conductor into the through holes so as to form the through-hole electrodes after the insulating film forming step; wherein the plurality of through holes are arranged such that the through holes aligning in the tilted direction are staggered in a direction perpendicular to the tilted direction as seen from a main face of the object.
摘要翻译：一种配备有多个通孔电极的插入件的制造方法，其特征在于，包括激光收敛步骤，将激光会聚在由硅制成的待加工的片状物体上，以在物体中形成改质区域; 在激光聚光步骤之后对物体进行各向异性蚀刻的蚀刻步骤，以沿着改质区域选择性地进行蚀刻，并在物体中形成多个通孔，每个通孔相对于物体的厚度方向倾斜，具有矩形截面; 绝缘膜形成步骤，在蚀刻步骤之后在每个通孔的内壁上形成绝缘膜; 以及通孔电极形成步骤，在绝缘膜形成步骤之后，将导体插入通孔中以形成通孔电极; 其中所述多个通孔被布置成使得沿着所述倾斜方向对齐的所述通孔在从所述物体的主面看时与所述倾斜方向垂直的方向交错。

99. 发明申请

US20120135585A1 METHOD FOR MANUFACTURING CHIP 有权
标题翻译：制造芯片的方法
公开(公告)号：US20120135585A1
公开(公告)日：2012-05-31
申请号：US13389053
申请日：2011-07-19
申请人： Hideki Shimoi , Keisuke Araki
发明人： Hideki Shimoi , Keisuke Araki
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L21/7806
摘要： A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate.
摘要翻译：由形成在基板上的功能元件构成的芯片的制造方法包括功能元件形成步骤，在由硅制成的被加工片状物体的一个主面上形成功能元件; 第一改质区域形成步骤，使激光在物体处会聚，以便沿着与该基板的厚度对应的预定深度从该主面形成沿物体的一个主面的第一改质区域; 第二改质区域形成步骤，将激光会聚在物体上，以形成第二改质区域，该第二改质区域从物体的一个主面侧的一个主面看，对应于基板的侧缘延伸使得所述第二改质区域沿着所述物体的厚度方向与所述第一改质区域连接; 以及蚀刻步骤，在第一和第二改质区域形成步骤之后沿着第一和第二改质区选择性地进行蚀刻，以便切割出物体的一部分并形成衬底。

100. 发明申请

US20100213838A1 PHOTOMULTIPLIER TUBE 有权
标题翻译：光电管
公开(公告)号：US20100213838A1
公开(公告)日：2010-08-26
申请号：US12710714
申请日：2010-02-23
申请人： Hiroyuki SUGIYAMA , Hideki Shimoi , Tsuyoshi Kodama , Hitoshi Kishita , Yasuyuki Kohno , Keisuke Inoue
发明人： Hiroyuki SUGIYAMA , Hideki Shimoi , Tsuyoshi Kodama , Hitoshi Kishita , Yasuyuki Kohno , Keisuke Inoue
IPC分类号： H01J43/18
CPC分类号： H01J43/243
摘要： Electrons are prevented from being made incident onto an insulation part between dynodes to improve a withstand voltage. The photomultiplier tube 1 is provided with a casing having a glass substrate 40 on which a main surface 40a made with an insulating material is formed, dynodes 31 constituted with a 1st stage to an Nth stage (N denotes an integer of 2 or more) which are arrayed so as to be spaced away sequentially from a first end side to a second end side on the main surface 40a, a photocathode 22 which is installed on the first end side so as to be spaced away from the 1st stage dynode 31a to emit photoelectrons, and an anode part 32 which is installed on the second end side so as to be spaced away from the Nth stage dynode 31j, taking out multiplied electrons as a signal, in which a groove 44, the surface of which is made with an insulating material, is formed between two adjacent dynodes 31 on the main surface 40a of the glass substrate 40, and the 1st stage to the Nth stage dynodes 31 are fixed on raised parts 45 adjacent to the grooves 44 on the glass substrate 40.
摘要翻译：防止电子入射到倍增极之间的绝缘部分上以提高耐受电压。光电倍增管1设置有具有玻璃基板40的壳体，在其上形成有由绝缘材料制成的主表面40a，由第一级至第N级构成的倍增电极31（N表示2以上的整数），排列成从主表面40a上的第一端侧到第二端侧依次间隔开，光电阴极22安装在第一端侧，以便与第一级倍增极31a间隔开以发射光电子和阳极部件32，其安装在第二端侧以与第N级倍增电极31j隔开，取出乘以的电子作为信号，其中凹槽44的表面由绝缘材料形成在玻璃基板40的主表面40a上的两个相邻的倍增极31之间，第一级至第N级倍增电极31固定在与玻璃基板40上的凹槽44相邻的凸起部分45上。

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