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    • 92. 发明授权
    • Method of manufacture of semiconductor device
    • 半导体器件的制造方法
    • US5629236A
    • 1997-05-13
    • US506483
    • 1995-07-25
    • Jun-ichi WadaHisashi KanekoNobuo Hayasaka
    • Jun-ichi WadaHisashi KanekoNobuo Hayasaka
    • H01L21/28H01L21/3205H01L21/768H01L23/52H01L23/522H01L23/532H01L21/205
    • H01L21/76838H01L21/76877H01L23/53223H01L2924/0002
    • The method of manufacturing a semiconductor device, according to the present invention, includes the steps of forming a polycrystal lower-level Al wiring layer on a silicon substrate, forming an interlayer insulation film for covering the lower-level Al wiring layer on the entire surface, forming a connection hole which reaches the lower-level Al wiring layer in the interlayer insulation film, forming a polycrystal upper-level Al wiring layer on a surface of the interlayer insulation film, forming an interlayer insulation film for covering the upper-level Al wiring layer on the entire surface, and forming a single-crystal lower-level Al wiring layer and upper-layer Al wiring layer which are connected to each other in the connection hole by heating the silicon substrate so that the lower-level Al wiring layer and the upper-level Al wiring layer are converted from a polycrystal phase to an amorphous phase, and then cooling the silicon substrate so that the upper-level Al wiring layer is set in a supercooling state.
    • 根据本发明的制造半导体器件的方法包括在硅衬底上形成多晶低级Al布线层的步骤,形成用于覆盖整个表面上的下层Al布线层的层间绝缘膜 在层间绝缘膜中形成到达下层Al布线层的连接孔,在层间绝缘膜的表面上形成多晶上层Al布线层,形成覆盖上层Al的层间绝缘膜 布线层,并且通过加热硅基板形成在连接孔中彼此连接的单晶下层Al布线层和上层Al布线层,使得下层Al布线层 并且将上层的Al布线层从多晶相转变为非晶相,然后冷却硅基板,使得上层的Al布线层为 处于过冷状态。