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91. 发明专利

JPS63244630A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63244630A
公开(公告)日：1988-10-12
申请号：JP7735787
申请日：1987-03-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： TANIGAWA TORU , KURIHARA MASAAKI , SHIGA SHOJI
IPC分类号： H01L21/52 , H01L21/60
摘要： PURPOSE:To prevent the solderability from lowering and to execute a soldering operation at a printed circuit board or the like by a method wherein a die bonding process and a wire bonding process are executed in an inactive atmosphere or in a reducing atmosphere. CONSTITUTION:When a semiconductor 1 is to be packaged by using a lead frame whose part to be die-bonded or wire-bonded is coated with a precious metal such as Ag or the like and whose outer lead 4 is coated with solder in advance, a die bonding process and a wire bonding process are executed in an inactive atmosphere or in a reducing atmosphere. That is to say, because the semiconductor 1 is packaged in the inactive atmosphere or in the reducing atmosphere, a compound is not oxidized even when it is heated at a high temperature; the good solderability is maintained; the previously soldered film at the outer lead is not deteriorated.

92. 发明专利

JPS63202050A MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPS63202050A
公开(公告)日：1988-08-22
申请号：JP3339387
申请日：1987-02-18
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/50
摘要： PURPOSE:To improve the functions and to decrease the cost, by covering the base material of a lead frame with high purity Cu having the Vickers hardness of 90 or less, covering an after lead part with Sn or Sn alloy to a thickness of 3mum or more, packaging an element in a non-oxidizing atmosphere, and sealing the element with a resin mold. CONSTITUTION:A Cu covering is applied so as to shield the harmful action to the raw material of a lead frame. Thus the amount of use of noble metal and the like is reduced, and reliability can be largely improved. In this case pure Cu applied by electric plating is suitable. Bonding can be performed based on the conditions of hardness, relative roughness and the like. The relative roughness (Rmax) of 0.4-1.5mum improves adhesion when resin molding is performed. Low Sn alloy at the after lead part has a high melting point. Thus the oxidation of Cu is suppressed, solderability is excellent and bending and cracking in leads are hard to occur. Since plating and Hot dipping after the resin molding are not required, the manufacturing process is simplified, and can contribute to the improvement in the quality and the reliability.

93. 发明专利

JPS63164225A TAPELIKE LEAD FOR ELECTRICAL CONNECTION 失效
公开(公告)号：JPS63164225A
公开(公告)日：1988-07-07
申请号：JP30823186
申请日：1986-12-26
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To obtain a connection which has high density of pads and external circuits and high reliability by forming a bump of pure Cu of specific value of purity and specific values or lower of O2 content amount and S content amount. CONSTITUTION:A bump of a tapelike lead formed with an electrical connection bump on a metal lead is formed of pure Cu of 99.995wt.% or more of purity, and 20ppm or less of O2 content amount and 2ppm or less of S content amount. Or, the bump of the tapelike lead formed with the electrical connection bump on a metal lead is formed of Cu alloy which contains totally 100ppm or less of one or more of 50ppm or less of Mg, 100ppm or less of Ca, 50ppm of less of Be, 100ppm or less of Y, 100ppm or less of rare earth element, 100ppm or less of Ti, 100ppm or less of Zr, 100ppm or less of Hf, 100ppm or less of Nb, 100ppm or less of Ta, 100ppm or less of V, 100ppm or less of Cr in the pure Cu of 99.995wt.% or more of purity, 20ppm or less of O2 content amount and 2ppm or less of S content amount.

94. 发明专利

JPS63164224A TAPELIKE LEAD FOR ELECTRICAL CONNECTION 失效
公开(公告)号：JPS63164224A
公开(公告)日：1988-07-07
申请号：JP30823086
申请日：1986-12-26
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To obtain a connection which can press-bond by a small load and has high density of pads and external circuits and high reliability by forming a bump of Al, Ag, Pb or an alloy thereof. CONSTITUTION:A bump of an electrically connecting tapelike lead formed with a connecting bump on a metal lead is formed of Al, Ag, Pb or an alloy thereof. For example, Cu alloy is used for the lead, a thin film of Ni, Ni-Co, Ni-P, Ni-B, Ni-Pd, etc. is formed, and the bump is then formed. The bump is formed of pure aluminum-0.5-2%Si, Al-0.5-1%Mg, Al-0.1-1%Pd, Al-0.5-5%Ni, Al-0.5-1.5%Cu, pure Ag, Ag-0.1-5%Sn, Ag-0.1-15%Au, Ag-0.1 a 30%Pd, pure Pb, Pb-1-40%Sn, Pb-1-10%Sn-1-5%Ag, Pb-1-3%Sb, Pb-0.05-1%Ca-1-5%Sn, etc.

95. 发明专利

JPS6366958A LEAD FRAME FOR SEMICONDUCTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6366958A
公开(公告)日：1988-03-25
申请号：JP21123386
申请日：1986-09-08
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/50
摘要： PURPOSE:To relax thermal stress, and to improve the reliability of a semiconductor element by making the thickness of a tab section, on which the semiconductor element is loaded, thinner than that of a lead section. CONSTITUTION:The thickness of a tab section 1 in a lead frame to which the tab section 1, on which a semiconductor element is loaded, and lead sections 2 electrically connected to electrode sections for the loaded element are shaped is made thinner than that of the tab section 1. Or the thickness of the tab section 1 is made thinner than that of the lead sections 2 while holes 3 are formed to the surface of the tab section 1 and/or notches 4 are shaped around the tab section 1. It is desirable that the thickness of said tab section 1 is brought to three quarters or less of the thickness of the lead sections 2, particularly, size to half from a quarter. It is preferable that the sum total of the areas of the holes 3 is brought to one/tenth or more of the area of the tab section 1, particularly, one/fifth-three quarters, and it is desirable that the length of the notches 4 is brought to approximately one/twentieth-a quarter of the length of the tab section 1.

96. 发明专利

JPS6365037A FINE COPPER WIRE AND ITS PRODUCTION 失效
公开(公告)号：JPS6365037A
公开(公告)日：1988-03-23
申请号：JP20889586
申请日：1986-09-05
申请人： FURUKAWA ELECTRIC CO LTD , FURUKAWA SPECIAL METAL COATED
发明人： TANIGAWA TORU , SHIGA SHOJI , KURIHARA MASAAKI , OKUDA KOZO , KAGA ICHIRO
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , H01B1/02
摘要： PURPOSE:To manufacture a fine copper wire excellent in deformability and having high wire strength, by subjecting an ingot having a specific composition consisting of Na, K, etc., and Cu and cast under vacuum or under nonoxidizing atmosphere to proper wire drawing and annealing treatment. CONSTITUTION:The ingot consisting of 0.1-2,000ppm of one or more elements among Na, K, Rb, Cs, Sr, Ba, Ga, Tl, Mo, and W and the balance Cu is cast under vacuum or nonoxidizing atmosphere. It is preferable that Cu of >=99.999wt% purity, desirably of >=about 99.9999%, is used as the above Cu. The above ingot is repeatedly subjected to wire drawing and annealing treatment so as to be formed into the prescribed wire diameter. At this time, at least final draft is regulated to 70-99.99%, and elongation is also regulated to 2-20% by means of annealing treatment or by further application of working at 1-5% draft after the above annealing treatment. In this way, the fine copper wire combining excellent deformability with high wire strength, free from softening at ordinary temp. and sag of loop, having superior shape of ball and suitable for ball bonding wire can be obtained.

97. 发明专利

JPS6351649A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6351649A
公开(公告)日：1988-03-04
申请号：JP19637986
申请日：1986-08-21
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To enable the bonding process to be performed with high efficiency and excellent reliability using Cu wires in place of Au wires by a method wherein a part or overall parts of an electrode pad are composed of Zn or Zn alloy, or In alloy. CONSTITUTION:A part or overall parts of an electrode pad 3 are composed of Zn, Zn alloy or in alloy. In other words, a Zn surface layer 9 is formed on the surface of an aluminium film 8 on an element 1 or a metal such as Ti, Cr, Pd etc. is laid on the aluminium film as a barrier 10 to form the Zn alloy surface layer 9 thereon further directly forming the Zn alloy on the surface of electrode 1. Then, bonding wires 6 comprising Cu or Cu alloy are bonded onto the surface layer 9 comprising Zn, Zn alloy or In alloy. Through these procedures, Zn or In etc. forming the surface layer of the electrode pad 3 as an element liable to diffuse, react and solid-resolve can diminish the bonding load or ultrasonic power enabling the bonding process to be performed at low temperature and high speed.

98. 发明专利

JPS6340352A LEAD FRAME FOR ELECTRONIC COMPONENT 失效
公开(公告)号：JPS6340352A
公开(公告)日：1988-02-20
申请号：JP18268686
申请日：1986-08-05
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/50
摘要： PURPOSE:To reduce the level of thermal stress due to mismatching of thermal expansion coefficient down to a negligible level by dividing tab part loading component elements into multiple parts. CONSTITUTION:Tab part loading part elements is divided into multiple parts to form divided parts 11, 12. The fluctuation in strain epsilon due to thermal stress is represented by epsilon = (thermal expansion coefficient) T.l(where l; one side length of tab, T; temperature fluctuation, (thermal expansion coefficient); difference in thermal expansion coefficient between tab and element. When tab is divided to shorten the length l, epsilon is decreased. Through these procedures, the level of thermal stress due to mismatching of thermal expansion coefficient can be reduced down to negiligible level.

99. 发明专利

JPS6333856A LEAD FRAME FOR ELECTRONIC COMPONENT 失效
公开(公告)号：JPS6333856A
公开(公告)日：1988-02-13
申请号：JP17564786
申请日：1986-07-28
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/50 , H01G4/228
摘要： PURPOSE:To remove the lowering of reliability due to the heat generation of an element section and moisture permeation by constituting a tab section, on which a component element is loaded, of a high heat transfer metal and a lead section of a plurality of low heat transfer metals. CONSTITUTION:A lead frame is organized of a plurality of metals, a tab section 1 is made of a high heat transfer metal and lead sections 2 of a low heat transfer metal, and these sections are constructed by particularly using Cu or a Cu alloy. The frame except the tab is preformed by the low heat transfer metal 10, and the tab 1 consisting of the high heat transfer metal 11 is joined with tab hanging leads 3 through mechanial caulking, welding, brazing, etc. Consequently, one parts of the leads 2 are composed of the high heat transfer metal 11, but the hanging leads 3 as direct paths to a thermal shock and moisture permeation to an element section are made of the low heat transfer metal 10 positively, thus increasing a practical improvement effect. A plate strip raw material in which high heat transfer sections are positioned spottily is employed preferably as a tab corresponding section, the conductivity of the tab section is 50%IACS or higher, particularly desirably, 70% or higher, and the conductivity of the lead sections is 35%IACS or, particularly preferably, 20%-5%.

100. 发明专利

JPS639957A SEMICONDUCTOR LEAD FRAME 失效
公开(公告)号：JPS639957A
公开(公告)日：1988-01-16
申请号：JP15453886
申请日：1986-07-01
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/50
摘要： PURPOSE:To improve bonding properties, to enhance adhesive properties between a frame and a mold in molding sealing and to elevate the reliability of an IC by coating the whole surface with either of Ag, Pd or Ru or these alloy in specific thickness and particularly coating the nose section of an inner lead with it in 1mum or more. CONSTITUTION: The whole surface of a lead frame is coated with either of Ag, Pd or Ru or these alloy in 0.02-0.2mum, and the nose sections 2 of inner leads are coated with either of Ag, Pd or Ru in 1mum or more. The nose sections 2 of the inner leads are coated with Ag, Pd or Ru because these metals are difficult to be oxidized, and metallic small-gage wires 7, etc., are joined stably with high reliability. Since these metals or alloy is difficult to be oxidized, it is not oxidized by heating at the time of bonding, thus holding adhesive properties with molding to a high degree. The coating can reduce or omit the strong-acid treatment or activated flux treatment of outer lead sections 3 for pretinning in mounting to a printed substrate.

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