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    • 91. 发明专利
    • DE69832467T2
    • 2006-08-17
    • DE69832467
    • 1998-08-13
    • FUJIKIN KKTOKYO ELECTRON LTDOHMI TADAHIRO
    • OHMI TADAHIROKAGAZUME TETUSUGIYAMA KAZUHIKODOHI RYOUSUKEUNO TOMIONISHINO KOUJIFUKUDA HIROYUKIIKEDA NOBUKAZUYAMAJI MICHIO
    • F16K17/22G05D7/06F16K7/14F16K7/16G05D16/20
    • A pressure-type flow rate control apparatus for use especially in the gas supply system in semiconductor manufacturing facilities. The flow control apparatus is provided with a bore-variable orifice, which permits easy switching of the fluid flow rate control range as well as size reduction of the pressure-type flow control apparatus, and offers other advantages including improved gas replaceability, prevention of dust formation, and reduced manufacturing costs of the flow control system. The pressure-type flow rate control apparatus comprises an orifice, a control valve provided on the upstream side of the orifice, a pressure detector provided between the control valve and the orifice, and a control unit to calculate a fluid flow rate Q on the basis of a pressure P1 detected by the pressure detector with the equation Q = KP1 (K = constant) and to output in a drive for the control valve the difference between the set flow rate signal Qs and the calculated flow rate signal Q as control signal Qy, wherein the pressure P1 on the upstream side of the orifice is regulated by actuating the control valve for controlling the flow rate of the fluid downstream of the orifice with the ratio P2/P1 between the pressure P1 on the upstream side of the orifice and the downstream pressure P2 maintained at not higher than the ratio of the critical pressure of the controlled fluid, characterized in that a direct touch type metal diaphragm valve unit functions as the orifice and that the ring-shaped gap between the valve seat and the diaphragm serves as variable orifice wherein the gap is adjusted by the orifice drive.
    • 95. 发明专利
    • DE69832467D1
    • 2005-12-29
    • DE69832467
    • 1998-08-13
    • FUJIKIN KKTOKYO ELECTRON LTDOHMI TADAHIRO
    • OHMI TADAHIROKAGAZUME TETUSUGIYAMA KAZUHIKODOHI RYOUSUKEUNO TOMIONISHINO KOUJIFUKUDA HIROYUKIIKEDA NOBUKAZUYAMAJI MICHIO
    • F16K17/22G05D7/06G05D16/20F16K7/16F16K7/14
    • A pressure-type flow rate control apparatus for use especially in the gas supply system in semiconductor manufacturing facilities. The flow control apparatus is provided with a bore-variable orifice, which permits easy switching of the fluid flow rate control range as well as size reduction of the pressure-type flow control apparatus, and offers other advantages including improved gas replaceability, prevention of dust formation, and reduced manufacturing costs of the flow control system. The pressure-type flow rate control apparatus comprises an orifice, a control valve provided on the upstream side of the orifice, a pressure detector provided between the control valve and the orifice, and a control unit to calculate a fluid flow rate Q on the basis of a pressure P1 detected by the pressure detector with the equation Q = KP1 (K = constant) and to output in a drive for the control valve the difference between the set flow rate signal Qs and the calculated flow rate signal Q as control signal Qy, wherein the pressure P1 on the upstream side of the orifice is regulated by actuating the control valve for controlling the flow rate of the fluid downstream of the orifice with the ratio P2/P1 between the pressure P1 on the upstream side of the orifice and the downstream pressure P2 maintained at not higher than the ratio of the critical pressure of the controlled fluid, characterized in that a direct touch type metal diaphragm valve unit functions as the orifice and that the ring-shaped gap between the valve seat and the diaphragm serves as variable orifice wherein the gap is adjusted by the orifice drive.
    • 97. 发明专利
    • DE69825848T2
    • 2005-09-01
    • DE69825848
    • 1998-06-12
    • OHMI TADAHIROFUJIKIN KK
    • OHMI TADAHIROMINAMI YUKIOKAWADA KOJITANABE YOSHIKAZUIKEDA NOBUKAZUMORIMOTO AKIHIRO
    • C01B5/00
    • Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.
    • 99. 发明专利
    • DE69912239T2
    • 2004-07-29
    • DE69912239
    • 1999-08-09
    • FUJIKIN KKTOKYO ELECTRON LTDOHMI TADAHIRO
    • OHMI TADAHIROIIDA SEIICHIKAGATSUME SATOSHIHIROSE JUNNISHINO KOUJIIKEDA NOBUKAZUYAMAJI MICHIODOHI RYOUSUKEYOSHIKAWA KAZUHIROKOYOMOGI MUTSUNORIUNO TOMIOIDETA EIJIHIROSE TAKASHI
    • G05D7/06F16K37/00
    • A method and apparatus for detection of the clogging of the orifice by measuring the upstream side pressure without breaking up the piping system in a flow rate control unit using an orifice, so as to extend the life of the flow control unit and enhance its safety. To be specific, the apparatus of detecting the clogging of the orifice in a pressure-type rate flow controller has a control valve (CV), an orifice (2), a pressure detector (14) for measuring the upstream pressure P1 therebetween and a flow rate setting circuit (32) wherein with the upstream pressure P1 maintained about two or more times higher than the downstream pressure P2, the downstream flow rate QC is calculated from the equation QC = KP1 (K: constant) and wherein the control valve (CV) is controlled by the difference signal QY between the calculated flow rate QC and the set flow rate QS, the apparatus comprising: a storage memory M memorizing standard pressure attenuation data Y(t) of the upstream pressure P1 measured with the flow rate switched from the high set flow rate QSH to the low set flow rate QSL, with the orifice (2) not clogged a pressure detector (14) for determination of the pressure attenuation data P(t) of the upstream pressure P1 with the flow rate switched from the high set flow rate QSR to the low set flow rate QSL, with the orifice (2) in the actual conditions a central processing unit CPU for checking the pressure attenuation data P(t) against standard pressure attenuation data Y(t) and an alarm circuit (46) that turns on a clogging alarm when the pressure attenuation data P(t) deviates from standard pressure attenuation data Y(t) to a specific degree or beyond that.