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91. 发明申请

US20150243692A1 X-Y ADDRESS TYPE SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译： X-Y地址型固态摄像装置及其制造方法
公开(公告)号：US20150243692A1
公开(公告)日：2015-08-27
申请号：US14625179
申请日：2015-02-18
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
摘要翻译：在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

92. 发明授权

US08964077B2 Solid-state imaging device, method for driving the same, and imaging device 有权
标题翻译：固态成像装置，其驱动方法和成像装置
公开(公告)号：US08964077B2
公开(公告)日：2015-02-24
申请号：US13588627
申请日：2012-08-17
申请人： Keiji Mabuchi
发明人： Keiji Mabuchi
IPC分类号： H04N5/335 , G03B7/00 , H01L27/146 , H04N5/345 , H04N5/353 , H04N5/355 , H04N5/359
CPC分类号： H01L27/14654 , H04N5/3452 , H04N5/3535 , H04N5/35581 , H04N5/3591 , H04N5/374 , H04N5/378
摘要： A CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time.
摘要翻译：一种CMOS图像传感器，包括具有排列在偶数像素行和奇数像素行中的像素的像素阵列单元。执行读取操作，使得在第一累积时间中读取第一像素组的第一信号，并且在比所述第一累积时间短的第二累积时间中读取第二像素组的第二信号。

93. 发明授权

US08687099B2 Imaging device, imaging method, and electronic device 有权
标题翻译：成像装置，成像方法和电子装置
公开(公告)号：US08687099B2
公开(公告)日：2014-04-01
申请号：US13592566
申请日：2012-08-23
申请人： Keiji Mabuchi
发明人： Keiji Mabuchi
IPC分类号： H04N3/14 , H04N5/335 , C12Q1/68 , H01J40/00 , H01L27/14
CPC分类号： H04N5/3745 , H04N5/347
摘要： Disclosed herein is an imaging device including: a pixel unit including a pixel disposed in a plane and a driving unit. The pixel includes an accumulating section configured to detect a physical quantity, and accumulate a charge corresponding to the physical quantity, a transfer section configured to transfer the charge from the accumulating section, a converting section configured to convert the charge into a voltage, an output section configured to output a signal of the voltage converted by the converting section, a reset section configured to reset the potential of the converting section, and a connecting section connected to the converting section. The driving unit is configured to transfer a signal for giving an instruction to transfer the charge, and a connecting signal for controlling connection and non-connection. The driving unit makes the charge transferred in a state of the converting sections being connected to each other.
摘要翻译：本文公开了一种成像装置，包括：像素单元，包括设置在平面中的像素和驱动单元。像素包括被配置为检测物理量并累积与物理量相对应的电荷的累积部分，被配置为从累积部分传送电荷的转移部分，被配置为将电荷转换成电压的转换部分，输出被配置为输出由转换部分转换的电压的信号;复位部分，被配置为重置转换部分的电位;以及连接部分，连接到转换部分。驱动单元被配置为传送用于发送用于传送费用的指令的信号，以及用于控制连接和不连接的连接信号。驱动单元使得在转换部分的状态下转移的电荷彼此连接。

94. 发明授权

US08558932B2 Solid state imaging device and camera system 有权
标题翻译：固态成像装置和相机系统
公开(公告)号：US08558932B2
公开(公告)日：2013-10-15
申请号：US13295361
申请日：2011-11-14
申请人： Tetsuo Nomoto , Eiji Makino , Keiji Mabuchi , Tsutomu Haruta , Shinjiro Kameda
发明人： Tetsuo Nomoto , Eiji Makino , Keiji Mabuchi , Tsutomu Haruta , Shinjiro Kameda
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14638 , H04N3/155 , H04N5/2173 , H04N5/335 , H04N5/357 , H04N5/3658 , H04N5/374 , H04N5/3765 , H04N5/378
摘要： A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).
摘要翻译：一种具有单位像素的MOS型固态成像装置，每个像素具有光电二极管，用于将光电二极管的信号传输到浮动节点;放大器晶体管，用于将浮动节点的信号输出到垂直信号线;以及复位用于复位浮动节点的晶体管。复位晶体管的栅极电压由电源电位（例如3V），接地电位（0V）和负电源电位（例如-1V）的三个值来控制。

95. 发明授权

US08471317B2 X-Y address type solid state image pickup device and method of producing the same 有权
标题翻译： X-Y地址型固体摄像装置及其制造方法
公开(公告)号：US08471317B2
公开(公告)日：2013-06-25
申请号：US13541455
申请日：2012-07-03
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L31/102 , H01L31/101 , H01L31/062 , H01L31/113 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer, wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
摘要翻译：在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见从硅层的另一侧，即从与布线层相反的一侧（背面）吸收光，可以在不考虑光接收表面的情况下进行布线，并且布线的自由度像素被增强。

96. 发明申请

US20120307118A1 SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, AND IMAGING DEVICE 有权
标题翻译：固态成像装置，其驱动方法和成像装置
公开(公告)号：US20120307118A1
公开(公告)日：2012-12-06
申请号：US13588627
申请日：2012-08-17
申请人： Keiji Mabuchi
发明人： Keiji Mabuchi
IPC分类号： H04N5/335
CPC分类号： H01L27/14654 , H04N5/3452 , H04N5/3535 , H04N5/35581 , H04N5/3591 , H04N5/374 , H04N5/378
摘要： a CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time.
摘要翻译： CMOS图像传感器包括具有排列在偶数像素行和奇数像素行中的像素的像素阵列单元。执行读取操作，使得在第一累积时间中读取第一像素组的第一信号，并且在比所述第一累积时间短的第二累积时间中读取第二像素组的第二信号。

97. 发明授权

US08325254B2 Solid-state imaging device, method for manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08325254B2
公开(公告)日：2012-12-04
申请号：US12604523
申请日：2009-10-23
申请人： Takeshi Yanagita , Keiji Mabuchi , Susumu Inoue
发明人： Takeshi Yanagita , Keiji Mabuchi , Susumu Inoue
IPC分类号： H04N3/14 , H04N5/225 , H01L27/146 , H01L21/00
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： A solid-state imaging device includes an effective pixel portion in which a plurality of pixels including photoelectric conversion elements are arrayed; and a nonconductive interpixel light-shielding film that is placed in the effective pixel portion and that shields areas between the pixels.
摘要翻译：一种固态成像装置，包括排列具有光电转换元件的多个像素的有效像素部，以及放置在有效像素部分中并遮蔽像素之间的区域的非导电像素间屏蔽膜。

98. 发明授权

US08324702B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08324702B2
公开(公告)日：2012-12-04
申请号：US13043090
申请日：2011-03-08
申请人： Masakazu Furukawa , Keiji Mabuchi
发明人： Masakazu Furukawa , Keiji Mabuchi
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14603 , H01L27/14623 , H01L27/14625 , H01L27/14629 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.
摘要翻译：一种固体摄像装置，具备：对每个像素设置的光电转换部，将入射到基板的第一面的光转换成信号电荷;读取由光电转换部累积的信号电荷的电路区域;多层膜包括绝缘膜和布线膜，所述多层膜设置在与所述第一表面相对的所述基板的第二表面上，以及至少设置在所述多层膜中的布线膜和所述基板之间的防透膜。

99. 发明授权

US08274588B2 Solid-state imaging device, method for driving the same, and imaging device 有权
标题翻译：固态成像装置，其驱动方法和成像装置
公开(公告)号：US08274588B2
公开(公告)日：2012-09-25
申请号：US12517595
申请日：2007-11-19
申请人： Keiji Mabuchi
发明人： Keiji Mabuchi
IPC分类号： H04N3/14 , H04N5/335 , H04N5/235 , G03B7/00
CPC分类号： H01L27/14654 , H04N5/3452 , H04N5/3535 , H04N5/35581 , H04N5/3591 , H04N5/374 , H04N5/378
摘要： In a CMOS image sensor (10) including a pixel array unit (12) having pixels separately arranged in even-numbered pixel rows and odd-numbered pixel rows, a reading operation performed on odd pixels having a short accumulation time is performed in an exposure start portion of even pixels having a long accumulation time. By this, even when the even pixels are saturated and signal charges overflow from the even pixels, and therefore, part of the signal charges intrude into the odd pixels adjacent to the even pixels, an adverse effect of blooming due to the saturation of the even pixels to signals of the odd pixels is eliminated since the reading operation performed on the odd pixels has already been completed. The adverse effect due to the blooming to the low-sensitive signals is eliminated when a method for attaining a dynamic range by differentiating accumulation times between adjacent pixels is employed.
摘要翻译：在包括具有分别布置在偶数像素行和奇数像素行中的像素的像素阵列单元（12）的CMOS图像传感器（10）中，在曝光中执行对具有短积累时间的奇数像素执行的读取操作具有长积累时间的偶数像素的开始部分。由此，即使偶数像素饱和，信号电荷从偶数像素溢出，因此信号电荷的一部分侵入到与偶数像素相邻的奇数像素中，由于偶数像素的饱和而引起的起晕的不利影响由于对奇数像素执行的读取操作已经完成，因此奇数像素的像素与信号被消除。当采用通过区分相邻像素之间的累积时间来获得动态范围的方法时，消除了由于对低敏感信号的引发而引起的不利影响。

100. 发明申请

US20120153125A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC INSTRUMENT 有权
标题翻译：固态图像拾取装置，驱动固态图像拾取装置的方法和电子仪器
公开(公告)号：US20120153125A1
公开(公告)日：2012-06-21
申请号：US13312430
申请日：2011-12-06
申请人： Yusuke Oike , Yorito Sakano , Keiji Mabuchi
发明人： Yusuke Oike , Yorito Sakano , Keiji Mabuchi
IPC分类号： H01L27/146
CPC分类号： H04N5/3535 , H01L27/14612 , H01L27/14656 , H04N5/353 , H04N5/3532 , H04N5/3698 , H04N5/37452
摘要： A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.
摘要翻译： CMOS图像传感器具有作为单位像素的矩阵的图像阵列，每个单元像素至少包括光电二极管，用于保持存储在光电二极管中的电荷的存储器，用于将存储器中的电荷转换为电压的浮动扩散区域，第一转移用于将电荷从光电二极管转移到存储器的栅极，用于将电荷从存储器传送到浮动扩散区域的第二传输栅极，以及用于复位浮置扩散区域中的电荷的复位晶体管。驱动单位像素以将存储器和浮动扩散区域之间的边界处的势垒的电势设置为电位，使得当第一传输门被导通时，溢出存储器的电荷被传送到浮动扩散区域。 CMOS图像传感器以全局快门模式运行，用于捕获运动图像。

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