专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US6061485A Method for wavelength division multiplexing utilizing donut mode vertical cavity surface emitting lasers 失效
标题翻译：利用环形模式垂直腔表面发射激光器进行波分复用的方法
公开(公告)号：US6061485A
公开(公告)日：2000-05-09
申请号：US963173
申请日：1997-11-03
申请人： Wenbin Jiang , Michael S. Lebby , Davis H. Hartman
发明人： Wenbin Jiang , Michael S. Lebby , Davis H. Hartman
IPC分类号： G02B6/42 , H04J14/02 , G02B6/26
CPC分类号： H04J14/02 , G02B6/4246 , G02B6/4249 , H01S2301/203 , H01S5/18391
摘要： A method for wavelength division multiplexing including the steps of providing at least two annular waveguide or spatially donut mode and spectrally single mode vertical cavity surface emitting lasers for operating in a single high order transverse mode. In addition, provided is a multimode fiber based data link. The spatially donut mode and spectrally single mode vertical cavity surface emitting lasers are coupled to the multimode fibers through wavelength multiplexing techniques. During operation, a modulation voltage or modulation current is applied to the spatially donut mode and spectrally single mode vertical cavity surface emitting lasers thereby exciting higher order modes in the multimode fiber based data link and thus achieving either wavelength division multiplexing or de-multiplexing over a large transmission distance.
摘要翻译：一种用于波分复用的方法，包括以下步骤：提供至少两个环形波导或空间环形模式和光谱单模垂直腔表面发射激光器，以在单个高阶横模中操作。另外，提供了一种基于多模光纤的数据链路。空间环形模式和光谱单模垂直腔表面发射激光器通过波长复用技术耦合到多模光纤。在操作期间，将调制电压或调制电流施加到空间环形模式和光谱单模垂直腔表面发射激光器，从而在基于多模光纤的数据链路中激发更高阶模，从而实现波分复用或解复用传输距离大。

92. 发明授权

US6023485A Vertical cavity surface emitting laser array with integrated photodetector 失效
标题翻译：具有集成光电检测器的垂直腔表面发射激光器阵列
公开(公告)号：US6023485A
公开(公告)日：2000-02-08
申请号：US024628
申请日：1998-02-17
申请人： Paul R. Claisse , Wenbin Jiang
发明人： Paul R. Claisse , Wenbin Jiang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/2059 , H01S5/423
摘要： A vertical cavity surface emitting laser array with an integrated PIN photodiode. The PIN photodiode includes a first region of a first doped material, a second region of an undoped material and a third region composed of an n-doped stack of distributed Bragg reflectors. The vertical cavity surface emitting laser includes the n-type stack of distributed Bragg reflectors, an active, and a p-type stack of distributed Bragg reflectors so as to define an optical pathway through which light is generated and passes. The integrated device allows for automatic power control of each of the individual devices forming the array by sequentially scanning the individual devices and generating feedback signals.
摘要翻译：具有集成PIN光电二极管的垂直腔表面发射激光器阵列。 PIN光电二极管包括第一掺杂材料的第一区域，未掺杂材料的第二区域和由分布布拉格反射器的n掺杂叠层构成的第三区域。垂直腔表面发射激光器包括分布式布拉格反射器的n型叠层，分布式布拉格反射器的有源和p型叠层，以便限定产生和通过光的光学路径。集成器件允许通过顺序扫描各个器件并产生反馈信号来对形成阵列的各个器件进行自动功率控制。

93. 发明授权

US6022760A Integrated electro-optical package and method of fabrication 失效
标题翻译：集成电光封装及其制造方法
公开(公告)号：US6022760A
公开(公告)日：2000-02-08
申请号：US118879
申请日：1998-07-20
申请人： Michael S. Lebby , Wenbin Jiang , Karen E. Jachimowicz
发明人： Michael S. Lebby , Wenbin Jiang , Karen E. Jachimowicz
IPC分类号： H01S5/022 , H01S5/42 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01S5/423 , H01S5/02248
摘要： An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.
摘要翻译：一种包括双面光电装置的集成电光学封装，由在其第一主表面上形成的发光器件阵列（LED）的衬底和形成在相对的第一主表面上的至少一个垂直腔表面发射激光器第二主要表面的基材。安装结构形成为允许将双面光电装置安装在内部主表面上，并且还具有用于与光电装置的LED和VCSEL配合的电导体。具有用于与安装结构和双面光电装置对接的电连接的驱动器基板。通过形成在驱动器基板上的连接焊盘连接到安装结构和双面光电器件的多个驱动电路。

94. 发明授权

US6021147A Vertical cavity surface emitting laser for high power single mode operation and method of fabrication 失效
标题翻译：垂直腔表面发射激光器，用于高功率单模操作和制造方法
公开(公告)号：US6021147A
公开(公告)日：2000-02-01
申请号：US963623
申请日：1997-11-04
申请人： Wenbin Jiang , Rong-Ting Huang , Michael S. Lebby
发明人： Wenbin Jiang , Rong-Ting Huang , Michael S. Lebby
IPC分类号： H01S5/183 , H01S5/20 , H01S3/085
CPC分类号： H01S5/183 , H01S2301/166 , H01S2301/176 , H01S5/0425 , H01S5/205
摘要： A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an isolation layer formed on the second stack of distributed Bragg reflectors. The isolation layer is formed of a dielectric material or insulating semiconductor material having an index of refraction greater than the first and second stacks of distributed Bragg reflectors and thereby defining an anti-guiding VCSEL structure. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.
摘要翻译：一种用于大功率单模操作的VCSEL及其制造方法，包括：衬底元件，布置在衬底元件表面上的分布式布拉格反射器的第一叠层;与分布布拉格反射器的第一叠层表面匹配的有源区域晶格，以及与激活区域的表面晶格匹配的分布式布拉格反射器的第二堆叠。 VCSEL结构包括形成在分布式布拉格反射器的第二堆叠上的隔离层。隔离层由介电材料或绝缘半导体材料形成，其折射率大于分布式布拉格反射器的第一和第二堆叠，从而限定反向引导VCSEL结构。电触点耦合到分布布拉格反射器的第二堆叠的表面，并且电触点定位在衬底元件的表面上。

95. 发明授权

US5974071A VCSEL with integrated photodetectors for automatic power control and signal detection in data storage 失效
标题翻译： VCSEL具有集成的光电探测器，用于数据存储中的自动功率控制和信号检测
公开(公告)号：US5974071A
公开(公告)日：1999-10-26
申请号：US859449
申请日：1997-05-20
申请人： Wenbin Jiang , Michael S. Lebby
发明人： Wenbin Jiang , Michael S. Lebby
IPC分类号： H01S5/026 , H01S5/183 , H01S3/19 , H01S3/08
CPC分类号： H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/183
摘要： A VCSEL with a vertically integrated photodetector and at least one laterally integrated photodetector, including first and second stacks of DBRs and an undoped region or active region sandwiched therebetween is formed. The vertically and laterally integrated PIN photodetectors are integrated into the device by depositing the region of undoped material in alignment with the first stack of DBRs. The device is fabricated to electrically isolate the vertical cavity surface emitting laser and the vertically integrated photodetector from the at least one laterally integrated photodetector.
摘要翻译：形成具有垂直集成的光电检测器的VCSEL和至少一个横向集成的光电检测器，其包括DBR的第一和第二堆叠以及夹在其间的未掺杂区域或有源区域。垂直和横向集成的PIN光电检测器通过沉积与第一堆DBR对准的未掺杂材料的区域而被集成到器件中。该器件被制造为将垂直腔表面发射激光器和垂直集成的光电检测器与至少一个横向集成的光电检测器电隔离。

96. 发明授权

US5943359A Long wavelength VCSEL 失效
标题翻译：长波长VCSEL
公开(公告)号：US5943359A
公开(公告)日：1999-08-24
申请号：US839112
申请日：1997-04-23
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01L21/20 , H01S5/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/34306 , H01S2301/00 , H01S2302/00 , H01S5/3202 , H01S5/32366
摘要： A VCSEL for emitting long wavelength light including a GaAs (111) substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure including a nitride based quantum well, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.
摘要翻译：一种用于发射包括GaAs（111）衬底元件的长波长光的VCSEL，在GaAs / AlGaAs材料系统晶格中具有与GaInAsN有源区匹配的具有镜对的第一反射镜叠层，其中活性结构夹在与第一反射镜堆叠和第二包层区域，所述活性结构包括氮化物基量子阱和与GaAs / AlGaAs材料体系中的第二覆层区域匹配并具有镜对的第二反射镜堆叠晶格。

97. 发明授权

US5835521A Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication 失效
公开(公告)号：US5835521A
公开(公告)日：1998-11-10
申请号：US795261
申请日：1997-02-10
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S3/02 , H01S5/00 , H01S5/02 , H01S5/183 , H01S3/19
CPC分类号： H01S5/1838 , H01S5/021 , H01S5/0217 , H01S5/18341 , H01S5/18369
摘要： A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.

98. 发明授权

US5821571A Dual sided integrated electro-optical package 失效
标题翻译：双面集成电光封装
公开(公告)号：US5821571A
公开(公告)日：1998-10-13
申请号：US902689
申请日：1997-07-30
申请人： Michael S. Lebby , Wenbin Jiang , Karen E. Jachimowicz
发明人： Michael S. Lebby , Wenbin Jiang , Karen E. Jachimowicz
IPC分类号： H01L33/00 , H01L27/15 , H01S5/00 , H01S5/022 , H01S5/323 , H01S5/343 , H01S5/42 , G09G3/32 , H01S3/19
CPC分类号： H01L27/156 , H01S5/423 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01S5/02248
摘要： An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.
摘要翻译：一种包括双面光电装置的集成电光学封装，由在其第一主表面上形成的发光器件阵列（LED）的衬底和形成在相对的第一主表面上的至少一个垂直腔表面发射激光器第二主要表面的基材。安装结构形成为允许将双面光电装置安装在内部主表面上，并且还具有用于与光电装置的LED和VCSEL配合的电导体。具有用于与安装结构和双面光电装置对接的电连接的驱动器基板。通过形成在驱动器基板上的连接焊盘连接到安装结构和双面光电器件的多个驱动电路。

99. 发明授权

US5815524A VCSEL including GaTlP active region 失效
标题翻译： VCSEL包括GaTlP有源区
公开(公告)号：US5815524A
公开(公告)日：1998-09-29
申请号：US806269
申请日：1997-02-25
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/00 , H01S5/183 , H01S5/323 , H01S5/343 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/2004 , H01S2302/00 , H01S5/32383 , H01S5/34306
摘要： A VCSEL for emitting long wavelength light including a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaTlP active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having a quantum well, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.
摘要翻译：一种用于发射长波长光的VCSEL，其包括在与GaTlP有源区匹配的GaAs / AlGaAs材料系统晶格中具有镜对的第一反射镜叠层，其中活性结构夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间，具有量子阱的活性结构和与第二包层区域匹配并在GaAs / AlGaAs材料体系中具有镜对的第二反射镜堆叠晶格。

100. 发明授权

US5757836A Vertical cavity surface emitting laser with laterally integrated photodetector 失效
标题翻译：具有横向集成光电检测器的垂直腔表面发射激光器
公开(公告)号：US5757836A
公开(公告)日：1998-05-26
申请号：US673488
申请日：1996-07-01
申请人： Wenbin Jiang , Chan-Long Shieh , Michael S. Lebby
发明人： Wenbin Jiang , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01S5/00 , H01S5/026 , H01S5/068 , H01S5/183 , H01S3/19 , H01S3/08 , H01S3/13
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/0683 , H01S5/2063
摘要： A vertical cavity surface emitting laser (VCSEL) having a first and a second mirror stack and an active region is formed utilizing epitaxial layer growth techniques. A lateral photodetector is integrally formed in the epitaxial growth layers, thereby providing for a VCSEL with laterally integrated photodetector. An isolation region is formed in the epitaxial growth layers between the VCSEL and the photodetector thereby isolating the VCSEL and the lateral photodetector. The integrated VCSEL and lateral photodetector capable of monitoring reflected laser emission, thus laser power output of the VCSEL and employing feedback to maintain a specific laser power output level, thereby capable of automatic power control (APC).
摘要翻译：使用外延层生长技术形成具有第一和第二反射镜叠层和有源区域的垂直腔表面发射激光器（VCSEL）。横向光电探测器整体地形成在外延生长层中，从而为具有横向集成光电检测器的VCSEL提供。在VCSEL和光电检测器之间的外延生长层中形成隔离区，从而隔离VCSEL和横向光电检测器。集成VCSEL和横向光电检测器能够监测反射激光发射，从而激光功率输出VCSEL，并采用反馈来维持特定的激光功率输出电平，从而能够进行自动功率控制（APC）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式