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91. 发明专利

JP2014052379A Specimen observation method and device, and inspection method and device using them 有权
标题翻译：标本观察方法和装置，以及使用它们的检查方法和装置
公开(公告)号：JP2014052379A
公开(公告)日：2014-03-20
申请号：JP2013203667
申请日：2013-09-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HATAKEYAMA MASACHIKA , MURAKAMI TAKESHI , NAITO YOSHIHIKO , TERAO KENJI , KIMURA NORIO , WATANABE KENJI
IPC分类号： G01N23/225 , H01J37/09 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , H01J37/29
CPC分类号： H01J37/28 , H01J37/22 , H01J37/244 , H01J37/29 , H01J2237/24475 , H01J2237/24585 , H01J2237/24592 , H01J2237/2805 , H01J2237/2806 , H01J2237/2817 , H01L22/12
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of improving observation ability of a specimen using an electron beam in an energy region conventionally not interested.SOLUTION: The sample observation method comprises: irradiating a specimen with an electron beam; detecting electrons to be observed generated by the irradiation with the electron beam and having information on the specimen; and forming an image of the specimen from the detected electrons to be observed. The irradiation with the electron beam intermingles secondary emission electrons and mirror electrons as the electrons to be observed by irradiating the specimen with the electron beam having landing energy set in a transition region between a secondary emission electron region where the secondary emission electrons are detected, and a mirror electron region where the mirror electrons are detected. The electrons to be observed are detected in the state where the secondary emission electrons and the mirror electrons are intermingled. A fine foreign matter or pattern of 100 nm or less can be observed and inspected at a high speed.
摘要翻译：要解决的问题：提供一种能够改善通常不感兴趣的能量区域中的电子束的样本的观察能力的技术。解决方案：样本观察方法包括：用电子束照射样本; 检测通过电子束的照射产生的待观察的电子，并且具有关于样本的信息; 并从所检测的电子形成待观察的样品的图像。电子束的照射将二次发射电子和镜面电子作为待观察的电子，通过用检测到二次发射电子的二次发射电子区域之间的过渡区域中设置着电能的电子束照射样品，检测镜电子的镜电子区域。在二次发射电子和镜电子混合的状态下检测待观察的电子。可以高速观察和检查100nm以下的微细异物或图案。

92. 发明专利

JP2013145748A Electron beam apparatus and sample observation method using the same 有权
标题翻译：电子束装置和采用该方法的样品观测方法
公开(公告)号：JP2013145748A
公开(公告)日：2013-07-25
申请号：JP2013032082
申请日：2013-02-21
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAGA TORU , TERAO KENJI , HATAKEYAMA MASAKI , WATANABE KENJI , NAITO YOSHIHIKO , MURAKAMI TAKESHI , KIMURA NORIO
IPC分类号： H01J37/29 , H01J37/20
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device which allows a primary optical system to have a precharge function and controls a region and an amount of the precharge to a sample.SOLUTION: An electron beam apparatus includes: a stage 30 on which a sample S is placed and including a moving mechanism; a primary optical system 10 generating an electronic beam having a predetermined radiation region and radiating the electronic beam to the sample S; a secondary optical system 20 detecting an electron obtaining structural information of the sample S and obtaining an image of the sample S for a predetermined visual region; and radiation region change means 13, 14 which change a position of the predetermined radiation region relative to the predetermined visual region. The radiation region change means 13, 14 change the visual region along the moving direction of the sample.
摘要翻译：要解决的问题：提供一种电子束装置，其允许主光学系统具有预充电功能并且控制对样品的预充电的区域和量。解决方案：电子束装置包括：阶段30，其上具有样品S被放置并包括移动机构; 生成具有预定辐射区域的电子束并将电子束辐射到样品S的主光学系统10; 第二光学系统20，检测获取样品S的结构信息的电子，并获得用于预定视觉区域的样本S的图像; 以及改变预定辐射区域相对于预定视觉区域的位置的辐射区域改变装置13,14。辐射区域改变装置13,14沿着样品的移动方向改变视觉区域。

93. 发明专利

JP2006278027A Electron beam device 有权
标题翻译：电子束装置
公开(公告)号：JP2006278027A
公开(公告)日：2006-10-12
申请号：JP2005092273
申请日：2005-03-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , SATAKE TORU , MURAKAMI TAKESHI
IPC分类号： H01J37/29 , H01J37/05 , H01J37/12 , H01J37/153 , H01J37/244
摘要： PROBLEM TO BE SOLVED: To reduce aberration other than axial chromatic aberration and to sufficiently reduce the axial chromatic aberration even when the length of an axial chromatic aberration compensating means is made short and an inside diameter is made large.
SOLUTION: Secondary electron emitted from a test piece by irradiation of primary electron beam in a rectangular field of view on the test piece 9 is magnified by a map projection optical system and guided to a plane detector or a linear detector by a secondary electron optical system. The secondary electron optical system is provided with lens 8 and 12 composing an image forming means forming an image by the secondary electron emitted from the test piece, and provided in a subsequent stage, a Vienna filter 13 compensating spherical aberration of a magnified image and magnifying lens 14 and 15 magnifying the electron beam passed through the Vienna filter. The lens 18 is provided with adjustable focal distance and the size of the axial chromatic aberration is made variable and thus, the size of the axial chromatic aberration can be matched with the size of the axial chromatic aberration in the Vienna filter. Therefore, both the spherical aberration and the axial chromatic aberration can be reduced.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了减少轴向色差以外的像差，并且即使当轴向色差补偿装置的长度短并且内径变大时也能充分降低轴向色差。解决方案：通过在测试片9上的矩形视场中的一次电子束的照射从测试片发射的二次电子被地图投影光学系统放大，并通过次级引导到平面检测器或线性检测器电子光学系统。二次电子光学系统设置有透镜8和12，该透镜8和12构成图像形成装置，该图像形成装置通过从试片发射的二次电子形成图像，并在随后的阶段中提供补偿放大图像的球面像差的维也纳滤镜13，透镜14和15放大通过维也纳滤镜的电子束。透镜18设置有可调焦距，并且轴向色像差的尺寸是可变的，因此轴向色差的尺寸可以与维也纳滤镜中的轴向色差尺寸相匹配。因此，可以减小球面像差和轴向色差。版权所有（C）2007，JPO＆INPIT

94. 发明专利

JP2005305444A Joining method of structure using energy beam 审中-公开
标题翻译：使用能量束结构的接合方法
公开(公告)号：JP2005305444A
公开(公告)日：2005-11-04
申请号：JP2004121429
申请日：2004-04-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MURAKAMI TAKESHI , WATANABE KENJI , ISHII YU , TERAO KENJI , TOYAMA KEIICHI , HIYAMA HIROKUNI , YOKOTA HIROSHI
IPC分类号： G02B6/255 , B23K15/00 , G02B6/42 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for joining a structure at a temperature causing no denaturation nor deterioration in a substrate or a device. SOLUTION: The joining method is a method for joining two structures to each other and is characterized by a process in which the joining face of at least one structure is irradiated with an energy beam and a process in which the joining face of the one structure so irradiated is brought into contact with the joining face of the other structure. Also, a joining apparatus is used which is characterized by a lens barrel having an energy beam generating source and by an irradiation part for emitting the energy beam. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在不引起变性或不损坏基板或器件的温度下接合结构的方法和装置。解决方案：接合方法是一种将两个结构彼此接合的方法，其特征在于，通过能量束照射至少一个结构的接合面的过程，以及其中接合面如此照射的一个结构与另一个结构的接合面接触。而且，使用的接合装置的特征在于具有能量束发生源的透镜镜筒和用于发射能量束的照射部分。版权所有（C）2006，JPO＆NCIPI

95. 发明专利

JP2005251440A Electron beam device, and manufacturing method of device using the same 审中-公开
标题翻译：电子束装置，以及使用该装置的装置的制造方法
公开(公告)号：JP2005251440A
公开(公告)日：2005-09-15
申请号：JP2004057014
申请日：2004-03-02
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAKASUJI MAMORU , NOMICHI SHINJI , SATAKE TORU , MURAKAMI TAKESHI , WATANABE KENJI
IPC分类号： G21K1/00 , G21K1/093 , G21K5/04 , H01J37/06 , H01J37/063 , H01J37/141 , H01J37/147 , H01J37/28 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device generating a plurality of electron beams at each light axis, for example four electron beams, with relatively large current at each electron beam. SOLUTION: The electron beam device comprises an electron beam discharging part (32) having an electron gun (30). The electron gun (30) is arranged along a light axis (23), and discharges a plurality of peripheral electron beams at the periphery of the light axis (23) in the direction having a prescribed angle to the light axis (23). The electron beam device is provided with a plurality of openings (34) located at the part sifted from the light axis (23), and a magnetic lens (7) forming a magnetic field between the electron gun (30) and the opening (34), and controlling the peripheral electron beams so that the plurality of peripheral electron beams discharged from the electron gun (30) pass through the opening (34). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供在每个电子束处具有相对大的电流的每个光轴（例如四个电子束）处产生多个电子束的电子束装置。解决方案：电子束装置包括具有电子枪（30）的电子束放电部分（32）。沿着光轴（23）配置电子枪（30），在光轴（23）的周围沿与光轴（23）成规定角度的方向排出多个周边电子束。电子束装置设置有位于从光轴（23）过滤的部分的多个开口（34）和在电子枪（30）和开口（34）之间形成磁场的磁性透镜（7）），并且控制外围电子束，使得从电子枪（30）放出的多个外围电子束通过开口（34）。版权所有（C）2005，JPO＆NCIPI

96. 发明专利

JP2004327121A Mapping projectiion electron beam device 审中-公开
公开(公告)号：JP2004327121A
公开(公告)日：2004-11-18
申请号：JP2003117014
申请日：2003-04-22
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SATAKE TORU , NOMICHI SHINJI , SOFUGAWA TAKUJI , HATAKEYAMA MASAKI , MURAKAMI TAKESHI , WATANABE KENJI , KANEUMA TOSHIFUMI , KARIMATA TSUTOMU
IPC分类号： H01L21/66 , H01J37/05 , H01J37/12 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide a mapping projection electron beam device with high resolution and high throughput in which a sample can be irradiated by a face beam. SOLUTION: The mapping projection system electron beam device EBI which can irradiate the sample W by a primary electron to form the face beam is equipped with an electron gun EG to eject the primary electron, a primary optical system 2 to adjust a beam shape of the primary electron from the electron gun EG, a Vienna filter 3 to change a traveling direction of the primary electron which has passed through the primary optical system 2, a lens system 5 to adjust the beam form of the primary electron from the Vienna filter 3 and to irradiate the sample W by means of the face beam, secondary optical systems 6, 7 to guide a secondary electron ejected from the sample W, and a secondary electron detection system 8 to detect the secondary electron from the secondary optical systems. COPYRIGHT: (C)2005,JPO&NCIPI

97. 发明专利

JP2003203596A ELECTRON BEAM DEVICE AND METHOD OF MANUFACTURING DEVICE USING THIS ELECTRON BEAM DEVICE 审中-公开
公开(公告)号：JP2003203596A
公开(公告)日：2003-07-18
申请号：JP2002002233
申请日：2002-01-09
申请人： EBARA CORP
发明人： NAKASUJI MAMORU , KATO TAKAO , SATAKE TORU , WATANABE KENJI , MURAKAMI TAKESHI
IPC分类号： H01L21/66 , H01J37/06 , H01J37/09 , H01J37/141 , H01J37/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam device capable of reducing shot noise of an electron beam, capable of increasing a beam current, capable of forming a molding beam by only two-stage lenses, and operable with high stability. SOLUTION: This electron beam device detects a secondary electron emitted from a sample surface by irradiating a sample with the electron beam emitted from an electron gun. The electron gun 11 is a thermoelectron emitting electron gun. A molding opening 13 and a NA opening 16 are arranged in front of the thermoelectron emitting electron gun 11. An image of the molding opening 13 by the electron beam C emitted from the thermoelectron emitting electron gun 11 is formed on the sample surface only by the two-stage lenses 17 and 20. COPYRIGHT: (C)2003,JPO

98. 发明专利

JP2002243956A FOR DEVICE, DEFECT INSPECTION DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR USING THE INSPECTION DEVICE 失效
公开(公告)号：JP2002243956A
公开(公告)日：2002-08-28
申请号：JP2001036100
申请日：2001-02-13
申请人： TOSHIBA CORP , EBARA CORP
发明人： YAMAZAKI YUICHIRO , MURAKAMI TAKESHI , NOMICHI SHINJI , SATAKE TORU , HATAKEYAMA MASAKI , WATANABE KENJI
IPC分类号： G01N23/225 , G01T1/20 , G01T1/29 , G02B6/06 , G21K5/04 , H01J37/244 , H01J37/29 , H01L21/66 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide an FOP(fiber optical plate) device having low distortion, and a defect inspection device using the same. SOLUTION: A fiber optical plate device F has an FOP stacked body 3 in which a prescribed number of fiber optical plates with a thickness of about 1 mm are stuck or brought into close contact with each other to overlap each other. In this case, the fiber optical plates are stuck or brought into close contact with each other to overlap each other by adjusting the rotating direction and position so that the distortion of the fiber optical plate may not be increased, thereby low distortion is obtained. The fiber optical plate device F has a thickness of 20 mm or less.

99. 发明专利

JP2002148227A METHOD AND APPARATUS FOR INSPECTION OF SURFACE AS WELL AS DEVICE MANUFACTURING METHOD 失效
公开(公告)号：JP2002148227A
公开(公告)日：2002-05-22
申请号：JP2000340651
申请日：2000-11-08
申请人： NIKON CORP , EBARA CORP
发明人： HAMASHIMA MUNEKI , HATAKEYAMA MASAKI , NOMICHI SHINJI , SATAKE TORU , NAKASUJI MAMORU , MURAKAMI TAKESHI , WATANABE KENJI
IPC分类号： G01N23/225 , H01J37/147 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus, for the inspection of a surface, wherein the electrostatic charge amount on the surface of a sample can be controlled properly even when an irradiation current value is increased in order to increase a throughput, clear image data of small strain can be acquired and an inspection of high reliability can be performed. SOLUTION: The surface inspection apparatus is provided with a beam source 1 by which the sample 10 is irradiated with a charged particle beam 2 and a detection part 18 which detects charged particles from the surface of the sample. The surface of the sample 10 is covered with a resistance film 42 having a prescribed electric resistance value, the sample 10 is irradiated with the charged particle beam 2, and secondary charged particles or the like generated from the surface of the sample are detected by the detection part 18.

100. 发明专利

JP2000164587A SUBSTRATE HEATER FOR SEMICONDUCTOR-MANUFACTURING EQUIPMENT 失效
公开(公告)号：JP2000164587A
公开(公告)日：2000-06-16
申请号：JP33786198
申请日：1998-11-27
申请人： EBARA CORP
发明人： MURAKAMI TAKESHI , KOGURE NAOAKI , FUKUNAGA YUKIO
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To obtain a substrate heater for semiconductor-manufacturing equipment, that can stably supply heat to a semiconductor substrate by avoiding the oxidation of a surface that directly makes contact with at least the semiconductor substrate or a susceptor within a heating plate surface, even if oxygen is used as the reaction gas. SOLUTION: In a substrate heater 2 for semiconductor manufacturing equipment, that is provided with an electrical heating element 10 and retains a semiconductor substrate or a susceptor for placing the semiconductor substrate on a surface 12a of a metal heating plate 12, the surface 12a for retaining at least the semiconductor substrate or the susceptor out of the surface of the heating plate 12 is covered with a nonmetal film 20.

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