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    • 95. 发明授权
    • Pseudomorphic high electron mobility transistor power device
    • 伪态高电子迁移率晶体管功率器件
    • US06593603B1
    • 2003-07-15
    • US10112359
    • 2002-03-29
    • Haecheon KimMin ParkJae-kyoung MunChang-hee HyoungHong-gu JiHo-kyun Ahn
    • Haecheon KimMin ParkJae-kyoung MunChang-hee HyoungHong-gu JiHo-kyun Ahn
    • H01L29739
    • H01L29/7785
    • A pseudomorphic high electron mobility transistor (PHEMT) power device formed on a double planar doped epitaxial substrate and capable of operating with a single voltage source and a method for manufacturing the PHEMT power device are provided. The PHEMT power device includes: an epitaxial substrate including a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, an updoped AlGaAs layer, a first doped silicon layer, a first spacer, an InGaAs electron transit layer, a second spacer, a second doped silicon layer having a different doping concentration from the first doped silicon layer, a lightly doped AlGaAs layer, and an undoped GaAs cap layer stacked sequentially on a semi-insulating GaAs substrate; a source electrode and a drain electrode formed on and in ohmic contact with the undoped GaAs cap layer; and a gate electrode formed on the lightly doped AlGaAs layer to extend through the undoped GaAs cap layer.
    • 提供了一种形成在双平面掺杂外延基板上并且能够用单个电压源操作的伪形高电子迁移率晶体管(PHEMT)功率器件和用于制造PHEMT功率器件的方法。 PHEMT功率器件包括:外延衬底,其包括GaAs缓冲层,AlGaAs / GaAs超晶格层,上升的AlGaAs层,第一掺杂硅层,第一间隔物,InGaAs电子迁移层,第二间隔物,第二掺杂 硅层,其具有与第一掺杂硅层不同的掺杂浓度,轻掺杂AlGaAs层和未掺杂的GaAs覆盖层,其顺序堆叠在半绝缘GaAs衬底上; 源电极和漏电极,形成在与未掺杂的GaAs盖层的欧姆接触中; 以及形成在轻掺杂的AlGaAs层上以延伸穿过未掺杂的GaAs覆盖层的栅电极。