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91. 发明授权

US07536772B2 Method of manufacturing a bottom spin valve with a laminated CoFe free layer 失效
标题翻译：制造具有层叠CoFe自由层的底部自旋阀的方法
公开(公告)号：US07536772B2
公开(公告)日：2009-05-26
申请号：US11269370
申请日：2005-11-08
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/187
CPC分类号： G11B5/3906 , G11B7/0053 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： A method is given for the manufacture of a bottom spin valve (BSV) spin filter spin valve (SFSV) type read sensor. The sensor has a composite, ultra-thin (
摘要翻译：给出了制造底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型读取传感器的方法。该传感器具有在两层CoFe之间形成为Cu高电导层（HCL）的复合超薄（<20埃）层压自由层。第二HCL形成为复合自由层上的Ru层。通过调节两个HCL的厚度，自由层将具有低的矫顽力和可调磁致伸缩。该传感器能够读取超过60Gb / in2的密度。

92. 发明授权

US07480173B2 Spin transfer MRAM device with novel magnetic free layer 有权
标题翻译：具有新颖无磁性层的自旋转移MRAM器件
公开(公告)号：US07480173B2
公开(公告)日：2009-01-20
申请号：US11717347
申请日：2007-03-13
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.
摘要翻译： CPP MTJ MRAM元件利用自旋角动量的传递作为改变自由层的磁矩方向的机构。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用包含被CoFeB层夹在中间的Ta或Hf薄层的新型自由层。该装置的特征在于DR / R的值在大约95％和105％之间。

93. 发明申请

US20080239589A1 Spin transfer MRAM device with novel magnetic synthetic free layer 有权
标题翻译：具有新型磁性合成自由层的自旋转移MRAM器件
公开(公告)号：US20080239589A1
公开(公告)日：2008-10-02
申请号：US11728491
申请日：2007-03-26
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/302
摘要： We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.
摘要翻译：我们描述了利用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM元件。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用具有三个铁磁层的新型合成自由层，其在成对配置中相互交换耦合。自由层包括内部铁磁体和两个外部铁磁性层，其中内层被铁磁交换耦合到一个外层并与另一个外层反耦合地进行反铁磁交换。在厚度优选小于0.4nm的Ta，Hf或Zr的超薄层上，铁磁耦合是非常强的。

94. 发明申请

US20080023740A1 Novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same 有权
标题翻译：用于增强dR / R的磁性隧道结装置的新型封盖层及其制造方法
公开(公告)号：US20080023740A1
公开(公告)日：2008-01-31
申请号：US11496691
申请日：2006-07-31
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400 W and 200 W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is restored by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.
摘要翻译：公开了一种MRAM阵列或TMR读取头中的MTJ，其中低磁化覆盖层是在NiFe或CoFeB / NiFe自由层，Ta中间层和Ru外层上形成的NiFeHf内层的复合物 Ta层。例如，通过共溅射分别为400W和200W的正向功率的NiFe和Hf靶来实现低磁化NiFeHf层。较高的Hf含量增加了NiFeHf层的吸氧能力，并且改变了厚度以改变dR / R，RA和磁致伸缩值。通过在自由层上并入NiFeHf层来恢复自由层和覆盖层之间的所谓死层，以改善晶格匹配。用于制造NiFeHf层的NiFe靶中的Fe含量优选与NiFe自由层相同。

95. 发明授权

US07264974B2 Method for fabricating a low resistance TMR read head 失效
标题翻译：制造低电阻TMR读头的方法
公开(公告)号：US07264974B2
公开(公告)日：2007-09-04
申请号：US10768917
申请日：2004-01-30
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11B5/3903 , Y10T29/49021 , Y10T428/1114
摘要： A method is provided for forming a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers) Al or Hf—Al layer deposited on an electrode whose surface has first been treated to form an oxygen surfactant layer, the oxygen within the surfactant layer being adsorbed within the ultra-thin layer to produce a uniform and stable Al2O3 stoichiometry (or HfO stoichiometry) in the tunneling barrier layer.
摘要翻译：提供一种用于形成具有具有低电阻和高击穿强度的超薄隧道势垒层的MTJ构造的磁阻读头的方法。阻挡层通过在其表面首先被处理以形成氧表面活性剂层的电极上沉积的超薄（两原子层）Al或Hf-Al层的自然氧化形成，表面活性剂层内的氧被吸附在该超薄层在隧道势垒层中产生均匀稳定的Al 2 O 3 O 3化学计量（或HfO化学计量）。

96. 发明授权

US07256971B2 Process and structure to fabricate CPP spin valve heads for ultra-high recording density 失效
标题翻译：制造用于超高记录密度的CPP自旋阀头的工艺和结构
公开(公告)号：US07256971B2
公开(公告)日：2007-08-14
申请号：US10796387
申请日：2004-03-09
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39 , G11B5/127 , C23C14/00
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3948 , H01F10/3259 , H01F10/3263 , H01F41/306 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.
摘要翻译：公开了具有改进的MR比和增加的电阻的CPP-GMR自旋值传感器结构。除了某些被钉扎层，铜间隔物和Ta覆盖层之外的所有层通过在沉积期间向Ar溅射气体添加部分O 2 O 2压力而进行氧掺杂。氧掺杂的CoFe自由和被钉扎层被制成稍微更厚以抵消由氧掺杂剂引起的小的磁矩的减小。在MnPt AFM层中掺入氧增强了交换偏压强度。诸如纳米氧化物层之类的插入层被包括在一个或多个游离，钉扎和间隔层中以增加界面散射。除了铜间隔物之外的所有层的厚度可以增加以增加体散射。本发明的CPP-GMR单自旋阀或双自旋阀的电阻增加了三倍，MR比增加了2〜3％。

97. 发明授权

US07201827B2 Process and structure to fabricate spin valve heads for ultra-high recording density application 失效
标题翻译：制造用于超高记录密度应用的自旋阀头的工艺和结构
公开(公告)号：US07201827B2
公开(公告)日：2007-04-10
申请号：US10661038
申请日：2003-09-12
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： C23C14/35
CPC分类号： G11B5/39 , Y10T29/49044
摘要： A method for forming a bottom spin-valve GMR sensor having ultra-thin layers of high density and smoothness and possessing oxygen surfactant layers as a result of the layers being sputtered in a mixture of Ar and O2. A particularly novel feature of the method is the use of a sputtering chamber with an ultra-low base pressure and correspondingly ultra-low pressure mixtures of Ar and O2 sputtering gas (
摘要翻译：一种形成具有高密度和平滑度的超薄层并具有氧表面活性剂层的底部自旋阀GMR传感器的方法，由于这些层以Ar和O 2混合物溅射。该方法的一个特别新颖的特征是使用具有超低底压的溅射室和相应的Ar和O 2溅射气体（<0.5毫托）的超低压混合物，其中混合氧的分压小于5×10 -9托。

98. 发明授权

US07042684B2 Structure/method to form bottom spin valves for ultra-high density 失效
标题翻译：用于形成超高密度底部自旋阀的结构/方法
公开(公告)号：US07042684B2
公开(公告)日：2006-05-09
申请号：US10460088
申请日：2003-06-12
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/302 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which is a more uniform and dense layer than such layers formed by high temperature annealing or reactive-ion etching. In one embodiment, the sensor has an ultra thin composite free layer and a high-conductance layer (HCL), providing high output and low coercivity. In a second embodiment, along with the same NOL, the sensor has a laminated free layer which includes a non-magnetic conductive layer, which also provides high output and low coercivity. The sensors are capable of reading densities exceeding 60 Gb/in2.
摘要翻译：底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例与其制造方法一起提供。在每个实施例中，传感器包括原位自然氧化的镜面反射层（NOL），其比通过高温退火或反应离子蚀刻形成的这种层更均匀和致密的层。在一个实施例中，传感器具有超薄复合自由层和高电导层（HCL），提供高输出和低矫顽力。在第二实施例中，与相同的NOL一起，传感器具有包括非磁性导电层的层叠自由层，其也提供高输出和低矫顽力。这些传感器能够读取超过60Gb / in <2>的密度。

99. 发明授权

US06974708B2 Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM 有权
标题翻译：氧化结构/制造高性能磁隧道结MRAM的方法
公开(公告)号：US06974708B2
公开(公告)日：2005-12-13
申请号：US10820391
申请日：2004-04-08
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L27/105 , G11C11/34 , G11C16/04 , H01L21/00 , H01L21/8246 , H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , H01L43/12
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al2O3 stoichiometry. The barrier layer is formed by depositing Al on a CoFe layer or a CoFe—NiFe bilayer having an oxygen surfactant layer formed thereon, then oxidizing the Al by radical oxidation. The underlying surfactant layer contributes oxygen to the bottom surface of the Al, forming an initial amorphous Al2O3 layer. This layer produces small, uniform grains in the remaining Al layer, which promotes a uniform oxidation of the Al between its upper and lower surfaces by the subsequent radical oxidation. A final annealing process to set a pinned layer magnetization enhances the homogeneous oxidation of the layer.
摘要翻译： MTJ（磁性隧道结）MRAM（磁性随机存取存储器）具有基本上均匀且均匀的Al 2 O 3 O 3化学计量的隧道势垒层。通过在其上形成有氧表面活性剂层的CoFe层或CoFe-NiFe双层上沉积Al，然后通过自由基氧化来氧化Al而形成阻挡层。下面的表面活性剂层向Al的底表面贡献氧，形成初始的非晶Al 2 O 3层。该层在剩余的Al层中产生小的均匀的晶粒，这促进了Al在其上表面和下表面之间的随后的自由基氧化的均匀氧化。设置钉扎层磁化的最终退火工艺增强了层的均匀氧化。

100. 发明授权

US06960480B1 Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head 有权
标题翻译：形成磁隧道结（MTJ）MRAM器件和隧道磁阻（TMR）读头的方法
公开(公告)号：US06960480B1
公开(公告)日：2005-11-01
申请号：US10849310
申请日：2004-05-19
申请人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
发明人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
IPC分类号： G11B5/39 , G11C11/15 , G11C11/16 , H01F10/30 , H01F10/32 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12 , H01L21/00
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/30 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12
摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.
摘要翻译：特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑，并具有高的击穿电压。种子层是形成在Ta的溅射蚀刻层上的NiCr层。用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被原位氧化（NOX），以形成阻挡层。所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

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