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91. 发明授权

US07882780B2 System and method for patterning both sides of a substrate utilizing imprint lithography 有权
标题翻译：使用压印光刻对基板的两侧进行图案化的系统和方法
公开(公告)号：US07882780B2
公开(公告)日：2011-02-08
申请号：US12076346
申请日：2008-03-17
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： B41F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Provided are methods and systems for imprinting a pattern formed on surfaces of an imprint mask onto a double-sided substrate. The method includes deforming the surfaces of the first and second imprint stamps to produce respective first and second deformed surfaces, each having an arc therein. A pressure is applied to bring the deformed first and second surfaces into intimate contact with the first and second substrate surfaces, respectively. The applied pressure substantially flattens the deformed surfaces. To separate the two surfaces, the applied pressure is released. The method also includes transporting a substrate having first and second patterning surfaces and a shaped edge using a carrier having a holding portion that holds the shaped edge of the substrate, the holding surface having a shape that is complementary to the shaped edge of the substrate, such that the patterning surfaces remain untouched by the carrier.
摘要翻译：提供了将形成在压印掩模表面上的图案压印到双面基板上的方法和系统。该方法包括使第一和第二印记印记的表面变形以产生相应的第一和第二变形表面，每个表面具有弧形。施加压力以使变形的第一和第二表面分别与第一和第二基板表面紧密接触。施加的压力基本上使变形的表面变平。为了分离两个表面，释放所施加的压力。该方法还包括使用具有保持部分的保持部分的载体运送具有第一和第二图案化表面的基板和成形边缘，保持表面具有与基板的成形边缘互补的形状，使得图案化表面保持不受载体的影响。

92. 发明授权

US07736825B2 Lithographic apparatus and device manufacturing method utilizing a resettable or reversible contrast enhancing layer in a multiple exposure system 失效
标题翻译：在多重曝光系统中利用可复位或可逆对比度增强层的光刻设备和器件制造方法
公开(公告)号：US07736825B2
公开(公告)日：2010-06-15
申请号：US11439290
申请日：2006-05-24
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/70466 , G03F7/70958 , Y10S430/146
摘要： A device manufacturing system and method are used to perform multiple exposures utilizing a resettable or reversible contrast enhancing layer. A radiation sensitive layer is formed on a substrate. A resettable or reversible contrast enhancing layer is formed on the radiation sensitive layer. The resettable or reversible contrast enhancing layer is bleached with a first pattern. The first pattern formed in the resettable or reversible contrast enhancing layer is transferred to the radiation sensitive layer. The resettable or reversible contrast enhancing layer is reset to unbleach the resettable or reversible contrast enhancing layer. The resettable or reversible contrast enhancing layer is bleached with a second pattern. The second pattern formed in the resettable or reversible contrast enhancing layer is transferred to the radiation sensitive layer.
摘要翻译：使用装置制造系统和方法来利用可重置或可逆的对比度增强层来进行多次曝光。辐射敏感层形成在基底上。可辐射或可逆的对比度增强层形成在辐射敏感层上。可复位或可逆对比度增强层用第一图案漂白。形成在可复位或可逆对比度增强层中的第一图案被转印到辐射敏感层。复位或可逆对比度增强层被复位以使可复位或可逆的对比度增强层未漂白。可复位或可逆对比度增强层以第二图案漂白。形成在可复位或可逆对比度增强层中的第二图案被转印到辐射敏感层。

93. 发明申请

US20090153826A1 Lithographic method and apparatus 有权
标题翻译：平版印刷方法和装置
公开(公告)号：US20090153826A1
公开(公告)日：2009-06-18
申请号：US12314612
申请日：2008-12-12
申请人： Harry Sewell , Jozef Petrus Henricus Benschop
发明人： Harry Sewell , Jozef Petrus Henricus Benschop
IPC分类号： G03B27/54 , G03B27/32
CPC分类号： G03F7/0043 , G03F7/70466
摘要： A multiple patterning process employs a phase change material, portions of which can be converted to an amorphous state and then a remaining portion is selectively removed to provide high resolution pattern features with a feature spacing smaller than, for example, a minimum spacing available in a conventional patterning layer employing a single exposure. A lithographic apparatus for use in the process may comprise an exposure tool having a single illuminator and single patterning device that is imaged through a single exposure slit onto a scanning substrate. Alternatively, the exposure tool may have multiple illuminators and/or multiple scanning complementary patterning devices optionally used with multiple exposure slits on the scanning substrate to facilitate double patterning in a single substrate pass.
摘要翻译：多重图形化工艺采用相变材料，其部分可以转换为非晶状态，然后选择性地去除剩余部分以提供高分辨率图案特征，其特征间距小于例如在采用单次曝光的常规图案层。用于该过程的光刻设备可以包括具有单个照明器和单个图案形成装置的曝光工具，其通过单个曝光狭缝成像到扫描基板上。或者，曝光工具可以具有可选地与扫描基板上的多个曝光狭缝一起使用的多个照明器和/或多个扫描互补图案形成装置，以便于在单个衬底通路中进行双重图案化。

94. 发明授权

US07399422B2 System and method for forming nanodisks used in imprint lithography and nanodisk and memory disk formed thereby 有权
标题翻译：用于形成印刷光刻的纳米盘的系统和方法以及由此形成的纳米盘和存储盘
公开(公告)号：US07399422B2
公开(公告)日：2008-07-15
申请号：US11288135
申请日：2005-11-29
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： B44C1/22 , C03C25/68 , C23F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855 , Y10S977/887 , Y10T29/49021 , Y10T29/49069
摘要： A system and method form a nanodisk that can be used to form isolated data bits on a memory disk. The imprint stamp is formed from first and second overlapping patterns, where the patterns are selectively etched. The selective etching leaves either pits or posts on the imprint stamp. The pits or posts are imprinted on the memory disk, leaving either pits or posts on the memory disk. The pits or posts on the memory disk are processed to form relatively small and dense isolated data bits. Instability of the isolated data bits caused by outside magnetic and thermal influences is substantially eliminated.
摘要翻译：系统和方法形成可以用于在存储器盘上形成隔离数据位的纳米盘。压印印模由第一和第二重叠图案形成，其中图案被选择性地蚀刻。选择性蚀刻留下印记戳上的凹坑或柱子。凹坑或帖子印在内存磁盘上，留下内存磁盘上的凹坑或帖子。处理存储器盘上的坑或柱以形成相对小且密集的隔离数据位。实际上消除了由外部磁和热影响引起的隔离数据位的不稳定性。

95. 发明申请

US20080163769A1 System and method for patterning both sides of a substrate utilizing imprint lithography 有权
标题翻译：使用压印光刻对基板的两侧进行图案化的系统和方法
公开(公告)号：US20080163769A1
公开(公告)日：2008-07-10
申请号：US12076346
申请日：2008-03-17
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： B44B5/02 , B28B1/14 , B31F1/07 , G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Provided are methods and systems for imprinting a pattern formed on surfaces of an imprint mask onto a double-sided substrate. The method includes deforming the surfaces of the first and second imprint stamps to produce respective first and second deformed surfaces, each having an arc therein. A pressure is applied to bring the deformed first and second surfaces into intimate contact with the first and second substrate surfaces, respectively. The applied pressure substantially flattens the deformed surfaces. To separate the two surfaces, the applied pressure is released. The method also includes transporting a substrate having first and second patterning surfaces and a shaped edge using a carrier having a holding portion that holds the shaped edge of the substrate, the holding surface having a shape that is complementary to the shaped edge of the substrate, such that the patterning surfaces remain untouched by the carrier.
摘要翻译：提供了将形成在压印掩模表面上的图案压印到双面基板上的方法和系统。该方法包括使第一和第二印记印记的表面变形以产生相应的第一和第二变形表面，每个表面具有弧形。施加压力以使变形的第一和第二表面分别与第一和第二基板表面紧密接触。施加的压力基本上使变形的表面变平。为了分离两个表面，释放所施加的压力。该方法还包括使用具有保持部分的保持部分的载体运送具有第一和第二图案化表面的基板和成形边缘，保持表面具有与基板的成形边缘互补的形状，使得图案化表面保持不受载体的影响。

96. 发明申请

US20080137044A1 Systems and methods for thermally-induced aberration correction in immersion lithography 有权
标题翻译：浸没光刻中热致像差校正的系统和方法
公开(公告)号：US20080137044A1
公开(公告)日：2008-06-12
申请号：US11634924
申请日：2006-12-07
申请人： Harry Sewell , Louis Markoya , Diane McCafferty
发明人： Harry Sewell , Louis Markoya , Diane McCafferty
IPC分类号： G03B27/52
CPC分类号： G03B27/72 , G03F7/70258 , G03F7/70341 , G03F7/7085 , G03F7/70858
摘要： Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects.
摘要翻译：提供了浸没光刻像差控制系统和补偿曝光区域中浸没流体中曝光能量的加热效应的方法。像差控制系统包括调节浸没式光刻系统内的光学元件的致动器和耦合到致动器的流体加热补偿模块。流体加热调节模块基于浸入液体的流速，曝光剂量和掩模版图案图像中的一个或多个的变化来确定致动器命令以对浸没式光刻系统内的光学元件进行像差调整。在一个实施例中，像差控制系统包括干涉测量传感器，其基于与浸没流体相关的操作特性的变化来预校准像差。提供校准像差的方法，确定致动器调节并且在操作特性的变化中实施致动器调节以控制像差效应。

97. 发明申请

US20070187358A1 Device manufacturing method and computer program product 有权
标题翻译：设备制造方法和计算机程序产品
公开(公告)号：US20070187358A1
公开(公告)日：2007-08-16
申请号：US11435296
申请日：2006-05-17
申请人： Richard Johannes Van Haren , Maurits Schaar , Ewoud Vreugdenhil , Harry Sewell
发明人： Richard Johannes Van Haren , Maurits Schaar , Ewoud Vreugdenhil , Harry Sewell
IPC分类号： C23F1/00 , G06F19/00 , B44C1/22 , G01L21/30
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.
摘要翻译：形成特征的方法，例如以比常规光刻技术更高的密度接触孔包括形成牺牲性特征阵列，从而保形地沉积牺牲层，使得负特征与正特征交错形成，定向蚀刻牺牲层并去除牺牲特征。结果是以比原始牺牲特征更高的密度的孔阵列。然后可以使用所需的方法将这些物质转移到下面的基底中。此外，可以重复该方法以以更高的密度创建阵列。

98. 发明申请

US20070153250A1 Interferometric lithography system and method used to generate equal path lengths of interfering beams 有权
标题翻译：用于产生相等路径长度的干涉光束的干涉光刻系统和方法
公开(公告)号：US20070153250A1
公开(公告)日：2007-07-05
申请号：US11320473
申请日：2005-12-29
申请人： Harry Sewell , Johannes Jacobus Baselmans
发明人： Harry Sewell , Johannes Jacobus Baselmans
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70408
摘要： A system and method are provided for writing patterns onto substrates. First and second beams are directed to converge and substantially overlap in a common region on a substrate. This can be done so that the first and second beams are mutually temporally coherent and spatially coherent in the region of overlap to form interference fringes to define a writing image. A beam width of the first and second beams is adjusted. This can be done so that respective path lengths of the beams are matched when they reach the common region to ensure the first and second beams are mutually spatially coherent and temporally coherent across an entire width of the common region. In one example, the substrate is moved with respect to the writing image, while writing patterns onto the substrate. In another example, the substrate remains stationary.
摘要翻译：提供了将图案写入基板的系统和方法。引导第一和第二光束在基板上的公共区域中会聚并基本重叠。这可以进行，使得第一和第二波束在重叠区域中相互时空相干和空间相干以形成干涉条纹以限定写入图像。调整第一和第二光束的光束宽度。这可以进行，使得当它们到达公共区域时，波束的相应路径长度匹配，以确保第一和第二波束在公共区域的整个宽度上相互空间相干和时间相干。在一个示例中，当将图案写入基板时，基板相对于写入图像移动。在另一个实例中，衬底保持静止。

99. 发明申请

US20070091440A1 Method and System for Correction of Intrinsic Birefringence in UV Microlithography 审中-公开
标题翻译： UV微光刻中固有双折射校正方法与系统
公开(公告)号：US20070091440A1
公开(公告)日：2007-04-26
申请号：US11613806
申请日：2006-12-20
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： G02B5/30
CPC分类号： G03F7/70966 , G02B1/02 , G02B13/143
摘要： Systems and methods for improved correction of intrinsic birefringence are provided. Two pairs of optical elements correct for intrinsic birefringence of optical materials. A combination of design criteria for the set of optical elements, including refractive power type, intrinsic birefringence signs, and crystal axis rotation, is used to correct for intrinsic birefringence.
摘要翻译：提供了用于改善固有双折射校正的系统和方法。两对光学元件校正光学材料的固有双折射。用于该组光学元件的设计标准的组合，包括折射力类型，固有双折射符号和晶体轴旋转，用于校正固有双折射。

100. 发明授权

US07199862B2 Beam-splitter optics design that maintains an unflipped (unmirrored) image for a catadioptric lithographic system 失效
标题翻译：光束分离器光学设计，用于保持反射折射光刻系统的未闪烁（未镜像）图像
公开(公告)号：US07199862B2
公开(公告)日：2007-04-03
申请号：US11272147
申请日：2005-11-14
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： G03B27/54 , G03B27/42 , G03B27/70 , G03B17/00
CPC分类号： G03F7/70941 , G02B17/08 , G02B17/0892 , G02B27/283 , G03F7/70225 , G03F7/70308
摘要： The present invention is a catadioptric system having a reticle optical group, a beam splitter, an aspheric mirror, a baffle plate, a folding mirror and a semiconductor wafer optical group. The reticle optical group, the beam splitter and the semiconductor wafer optical group are placed on the same beam axis, different from aspheric mirror and folding mirror axis. The light passes through an image pattern on the reticle and is reflected by the beam splitter onto the aspheric mirror. The aspheric mirror reflects the light back through the beam splitter onto the folding mirror. The folding mirror reflects the light back to the beam splitter. The beam splitter reflects the light onto the semiconductor wafer optical group. A plurality of quarter wave plates can be placed in optical paths between optical elements of the present invention to change polarization of an incoming light. Before light passes through the semiconductor wafer optical group, it passes through the baffle plate, which prevents any background scattered light caused by internal reflections within the beam splitter from entering the semiconductor wafer optical group. In another embodiment, a spacer plate is inserted into the beam splitter. The spacer plate creates an offset between reticle optical group beam axis and semiconductor wafer optical group beam axis. This reduces direct passage of light from reticle optical group to semiconductor wafer optical group.
摘要翻译：本发明是具有光罩光学组，分束器，非球面镜，挡板，折叠镜和半导体晶片光学组的反折射系统。光掩模光学组，分束器和半导体晶片光学组被放置在与非球面镜和折叠镜轴不同的相同的光束轴上。光通过掩模版上的图像图案，并被分束器反射到非球面镜上。非球面镜通过分束器将光反射回折叠镜。折叠镜将光反射回分束器。分束器将光反射到半导体晶片光学组上。多个四分之一波片可以放置在本发明的光学元件之间的光路中，以改变入射光的偏振。在光通过半导体晶片光学组之前，它通过挡板，其防止由分束器内的内部反射引起的任何背景散射光进入半导体晶片光学组。在另一个实施例中，间隔板被插入到分束器中。间隔板在标线片光学组束轴和半导体晶片光学组束轴之间产生偏移。这减少了光线从光掩模光学组到半导体晶片光学组的直接通过。

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