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    • 91. 发明申请
    • LIGHT-EMITTING DEVICE
    • 发光装置
    • US20110133154A1
    • 2011-06-09
    • US12782925
    • 2010-05-19
    • Akira TanakaYoko Motojima
    • Akira TanakaYoko Motojima
    • H01L33/04H01L33/30H01L33/36
    • H01L33/42H01L33/145
    • A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of InxGayAl1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1); a first electrode provided on the first conductivity type layer exposed to a bottom surface of a step difference provided in the laminated body; a translucent electrode provided on one portion of an upper face of the second conductivity type layer; and a second electrode provided on the translucent electrode and being smaller than the translucent electrode. A length of the other portion of the upper face of the second conductivity layer between an end portion of the translucent electrode and the side face of the step difference is 30 μm or more along a line connecting between a center of the first electrode and a center of the second electrode.
    • 发光器件包括:层叠体,其包括第一导电型层,设置在第一导电类型层上的发光层和设置在发光层上的第二导电类型层,所述层叠体由In x Ga y Al 1-x -yN(0≦̸ x≦̸ 1,0≦̸ y≦̸ 1,x + y≦̸ 1); 第一电极,其设置在暴露于设置在层叠体中的台阶差的底面的第一导电类型层上; 设置在所述第二导电类型层的上表面的一部分上的半透明电极; 以及设置在所述透光性电极上并且比所述透光性电极小的第二电极。 另外,透光性电极的端部与台阶差的侧面之间的第二导电层的上表面的另一部分的长度沿着连接在第一电极的中心与中心之间的线为30μm以上 的第二电极。
    • 92. 发明申请
    • COMMUNICATION SHEET STRUCTURE
    • 通讯表结构
    • US20110084890A1
    • 2011-04-14
    • US12996839
    • 2008-06-27
    • Akira TanakaMachiko OouchidaHiroyuki Mori
    • Akira TanakaMachiko OouchidaHiroyuki Mori
    • H01Q1/36
    • H04B13/00
    • A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.
    • 用于传送电磁波,从而进行通信的通信片结构的特征在于,通信片结构包括平面基底材料,其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0,一个 基体材料的一侧包括导体A存在部分和不存在部分,并且基材的另一侧包括存在于其中90%以上的导体B. 通信片结构使得能够在二维方面进行通信,并且通信片结构在通信性能方面非常优异。
    • 94. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US07830930B2
    • 2010-11-09
    • US12204223
    • 2008-09-04
    • Akira Tanaka
    • Akira Tanaka
    • H01S3/13H01S3/00H01S3/097
    • H01S5/0425B82Y20/00H01S5/028H01S5/16H01S5/2231H01S5/34333
    • A semiconductor laser device includes: a laminated body including an active layer, a cladding layer provided on the active layer, and a contact layer provided on the cladding layer, the laminated body having a first and second end face forming a resonator for light emitted from the active layer; and an electrode provided on the contact layer and including an ohmic section injecting a current into the active layer and a first current adjustment section provided between one end of the ohmic section and the first end face. The ohmic section contains a metal which has a smaller work function than any metal constituting the current adjustment section.
    • 半导体激光器件包括:层叠体,包括有源层,设置在有源层上的包覆层和设置在包覆层上的接触层,所述层叠体具有形成用于从...发射的光的共振器的第一和第二端面 活性层; 以及设置在所述接触层上并包括将电流注入到所述有源层中的欧姆部分的电极和设置在所述欧姆部分的一端与所述第一端面之间的第一电流调节部分。 欧姆部分含有比构成电流调节部分的任何金属功函数小的金属。
    • 97. 发明申请
    • INFORMATION PROCESSING APPARATUS AND IMAGE PROCESSING METHOD
    • 信息处理设备和图像处理方法
    • US20090324090A1
    • 2009-12-31
    • US12464671
    • 2009-05-12
    • Akira Tanaka
    • Akira Tanaka
    • G06K9/48G06K9/32
    • H04N7/0125H04N7/0142
    • According to one embodiment, an edge detection module detects edges in a frame of a moving picture signal in accordance with an edge determination reference value. A resolution conversion module converts a resolution of the frame from a first resolution to a second resolution, thereby generating a provisional high-resolution image. A corresponding pixel point detection module detects corresponding pixels in the provisional high-resolution image, which correspond to each of the detected edges. An image quality enhancement process module executes an image quality enhancement process for sharpening for each of the detected corresponding pixels in the provisional high-resolution image. A control module varies the edge determination reference value based on the detected edge number and a maximum edge number at which an information processing apparatus is able to complete the resolution-enhancing process for one frame within a target process time.
    • 根据一个实施例,边缘检测模块根据边缘确定参考值来检测运动图像信号的帧中的边缘。 分辨率转换模块将帧的分辨率从第一分辨率转换为第二分辨率,从而生成临时高分辨率图像。 相应的像素点检测模块检测临时高分辨率图像中对应于每个检测到的边缘的相应像素。 图像质量增强处理模块执行针对临时高分辨率图像中的每个检测到的相应像素的锐化的图像质量增强处理。 控制模块基于检测到的边缘数量和信息处理装置能够在目标处理时间内完成一帧的分辨率增强处理的最大边缘数量来改变边缘确定参考值。
    • 100. 发明申请
    • SEMICONDUCTOR LASER DEVICE
    • 半导体激光器件
    • US20080175293A1
    • 2008-07-24
    • US12013557
    • 2008-01-14
    • Akira Tanaka
    • Akira Tanaka
    • H01S5/30
    • H01S5/34333B82Y20/00H01S5/2009H01S5/22H01S5/3063H01S5/3072
    • To provide a semiconductor laser device capable of reducing the power consumption and enhancing the reliability. The semiconductor laser device includes: a crystal substrate; a first clad layer of a first conductivity type formed on the crystal substrate; a first light guide layer of the first conductivity type formed on the first clad layer; an active layer of a single or multiple quantum well structure formed on the first light guide layer; an overflow preventing layer of a second conductivity type formed on the active layer; a second light guide layer of the second conductivity type formed on the overflow preventing layer; and a second clad layer of the second conductivity type formed on the second light guide layer, wherein the carrier concentration of the second light guide layer is set to the carrier concentration or more of the second clad layer.
    • 提供能够降低功耗并提高可靠性的半导体激光装置。 半导体激光装置包括:晶体基板; 形成在所述晶体基板上的第一导电类型的第一覆盖层; 形成在第一覆盖层上的第一导电类型的第一导光层; 形成在第一导光层上的单个或多个量子阱结构的有源层; 形成在有源层上的第二导电类型的溢出防止层; 形成在溢流防止层上的第二导电类型的第二导光层; 以及形成在第二导光层上的第二导电类型的第二覆盖层,其中将第二导光层的载流子浓度设定为第二覆盖层的载流子浓度或更多。