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91. 发明申请

US20100244086A1 METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：制造III族氮化物半导体的方法，制造III族氮化物半导体发光器件的方法，III族氮化物半导体发光器件和灯
公开(公告)号：US20100244086A1
公开(公告)日：2010-09-30
申请号：US12438047
申请日：2008-06-03
申请人： Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
发明人： Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
IPC分类号： H01L33/30 , H01L21/20 , H01L33/02
CPC分类号： H01L21/02631 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/1305 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.
摘要翻译：一种本发明的III族氮化物半导体的制造方法，其特征在于，包括：溅射工序，用于将基板和靶设置在室内，并通过反应溅射法在所述基板上形成Mg掺杂的III族氮化物半导体，步骤包括各自的子步骤：用于在掺杂Mg时形成半导体薄膜的成膜步骤; 以及等离子体处理步骤，用于对在成膜步骤中形成的半导体薄膜进行惰性气体等离子体处理，并且通过层合半导体薄膜而形成第III族氮化物半导体，该方法是通过交替重复成膜步骤和等离子体处理步骤。

92. 发明申请

US20100244040A1 GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译： III族氮化物半导体发光器件，制造III族氮化物半导体发光器件的方法和灯
公开(公告)号：US20100244040A1
公开(公告)日：2010-09-30
申请号：US12377522
申请日：2007-11-05
申请人： Yasunori Yokoyama , Hisayuki Miki
发明人： Yasunori Yokoyama , Hisayuki Miki
IPC分类号： H01L33/32 , H01L21/203
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L21/02658 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01S5/0213 , H01S5/02244 , H01S5/0425 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2301/173 , H01S2304/00 , H01L2924/00014 , H01L2924/00012
摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.
摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12）并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

93. 发明授权

US07749785B2 Manufacturing method of group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US07749785B2
公开(公告)日：2010-07-06
申请号：US12302123
申请日：2008-05-01
申请人： Hisayuki Miki , Yasumasa Sasaki
发明人： Hisayuki Miki , Yasumasa Sasaki
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： C23C14/0641 , C23C14/0036 , C23C14/06 , C23C28/04 , C23C28/42 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, in which a substrate on which is formed a foundation layer including a monocrystalline group III nitride semiconductor is used as the substrate, and lamination films are formed on the foundation layer by a sputtering method, with the substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal being placed in a sputtering chamber.
摘要翻译：本发明提供一种III族氮化物半导体发光器件的制造方法，其包括在基板上形成包括III族氮化物半导体的多个层压膜的层压步骤，其中基板上形成有基底层使用单晶III族氮化物半导体作为基板，并且通过溅射法在基底层上形成层压膜，基底包括基底层和由III族金属制成的靶或包含III族金属的合金金属被放置在溅射室中。

94. 发明申请

US20100059760A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR ITS PRODUCTION 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件及其生产工艺
公开(公告)号：US20100059760A1
公开(公告)日：2010-03-11
申请号：US12441074
申请日：2007-12-20
申请人： Hisayuki Miki
发明人： Hisayuki Miki
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light emitting device with high light emission output and low driving voltage.The gallium nitride-based compound semiconductor light emitting device of the present invention is a gallium nitride-based compound semiconductor light emitting device characterized by comprising an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, stacked in that order on a substrate, with a negative electrode and positive electrode provided on the n-type semiconductor layer and p-type semiconductor layer, respectively, the positive electrode being composed of a conductive transparent oxide material, wherein a layer containing a compound with a Ga—O bond and/or an N—O bond is present between the p-type semiconductor layer and positive electrode.
摘要翻译：本发明的目的是提供一种具有高发光输出和低驱动电压的氮化镓基化合物半导体发光器件。本发明的氮化镓系化合物半导体发光元件是氮化镓类化合物半导体发光元件，其特征在于，具有由镓构成的n型半导体层，发光层和p型半导体层氮化物类化合物半导体，分别在基板上层叠有负极和正极，分别设置在n型半导体层和p型半导体层上，正极由导电透明氧化物材料构成，其中在p型半导体层和正极之间存在含有Ga-O键和/或N-O键的化合物的层。

95. 发明申请

US20100051980A1 METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：制备III族氮化物半导体发光器件的方法，III类氮化物半导体发光器件和灯
公开(公告)号：US20100051980A1
公开(公告)日：2010-03-04
申请号：US12519987
申请日：2007-12-18
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L21/02631 , C23C14/0036 , C23C14/0641 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L33/0075
摘要： A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.
摘要翻译：一种制造根据本发明的III族氮化物半导体发光器件的方法，包括在衬底上通过溅射法形成包含Ga作为III族元素的III族氮化物半导体层的半导体层，其中在半导体层的形成期间，在至少由Ga组成的溅射靶的表面层液化的条件下进行溅射。

96. 发明申请

US20100006430A1 SPUTTERING DEPOSITION APPARATUS AND BACKING PLATE FOR USE IN SPUTTERING DEPOSITION APPARATUS 有权
标题翻译：溅射沉积装置和背板在溅射沉积装置中使用的溅射沉积装置
公开(公告)号：US20100006430A1
公开(公告)日：2010-01-14
申请号：US12374974
申请日：2007-10-19
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/0617
摘要： A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.
摘要翻译：提供了能够稳定地保持Ga的溅射沉积设备中使用的背板和设置有背板的溅射沉积设备。这种用于溅射沉积设备的背板是用于保持含有Ga的靶材料的背板，并且至少其与目标材料接触的接触表面由易接触的材料构成，该材料具有接触角以Ga为液态不超过90°。

97. 发明授权

US07585690B2 Process for producing group III nitride compound semiconductor light emitting device, group III nitride compound semiconductor light emitting device and lamp 有权
标题翻译： III族氮化物化合物半导体发光元件，III族氮化物化合物半导体发光元件和灯的制造方法
公开(公告)号：US07585690B2
公开(公告)日：2009-09-08
申请号：US11944306
申请日：2007-11-21
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/02631 , H01L33/325 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/3011 , H01L2924/30111 , H01S5/34333 , H01S2304/04 , H01L2924/00014 , H01L2924/00
摘要： A process for producing a group III nitride compound semiconductor light emitting device, the group III nitride compound semiconductor light emitting device and a lamp, having excellent producability and excellent light emitting characteristics are provided. Such a process for producing a group III nitride semiconductor light emitting device is a process for producing a group III nitride semiconductor light emitting device having a semiconductor layer 20 constituted by laminating an n-type semiconductor layer, a light-emitting layer 15 and a p-type semiconductor layer 16. Each of these consists of a group III nitride semiconductor, including a step of forming at least a part of the semiconductor layer 20 by a sputtering method, in which upon forming the p-type semiconductor layer 14 by a sputtering method, a Ga target containing Ga element, and a dopant target consisting of a mixture of an element having a small crystal composition of elements contained in the p-type semiconductor layer 14 and a dopant element is used as a sputtering target, and power is applied simultaneously to both the Ga target and the dopant target.
摘要翻译：提供了具有优异的可制造性和优异的发光特性的III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件和灯的制造方法。这种制造III族氮化物半导体发光器件的方法是用于制造具有半导体层20的III族氮化物半导体发光器件的方法，该半导体层20由层叠n型半导体层，发光层15和p 型半导体层16.这些都由III族氮化物半导体组成，包括通过溅射法形成半导体层20的至少一部分的步骤，其中通过溅射形成p型半导体层14 使用包含Ga元素的Ga靶和由p型半导体层14中包含的具有小的晶体组成的元素和掺杂元素的混合物构成的掺杂物靶作为溅射靶，功率为同时施加Ga靶和掺杂物靶。

98. 发明申请

US20090205707A1 SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20090205707A1
公开(公告)日：2009-08-20
申请号：US12388145
申请日：2009-02-18
申请人： Yoshiaki IKENOUE , Naoki Fukunaga , Hironao Shinohara , Hisayuki Miki , Kenzo Hanawa , Hiroaki Kaji , Hitoshi Yokouchi , Ryoko Konta
发明人： Yoshiaki IKENOUE , Naoki Fukunaga , Hironao Shinohara , Hisayuki Miki , Kenzo Hanawa , Hiroaki Kaji , Hitoshi Yokouchi , Ryoko Konta
IPC分类号： H01L31/00 , H01L21/306
CPC分类号： H01L31/022466 , H01L31/0687 , H01L31/0693 , H01L31/1852 , H01L31/186 , H01L31/1884 , Y02E10/544 , Y02P70/521
摘要： The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.
摘要翻译：本发明的目的是提供一种在工业上有益且具有高的光转换效率的太阳能电池; 以及太阳能电池的制造方法。并且本发明提供了一种太阳能电池，其包括基板，用于将接收的光转换为电力的发电层，透光性电极和另一电极，当光从其第一表面穿过各构件时，与第一表面被定义为第二表面，发电层形成在基板的第二表面侧，透光性电极形成在发电层的一个表面上，另一个电极形成在发电的另一个表面上层，其中所述透光性电极包含六方晶In2O3晶体。

99. 发明申请

US20090152585A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：US20090152585A1
公开(公告)日：2009-06-18
申请号：US12065970
申请日：2006-09-05
申请人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
发明人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

100. 发明申请

US20080246053A1 P-Type Group III Nitride Semiconductor and Production Method Thereof 有权
标题翻译： P型III族氮化物半导体及其制造方法
公开(公告)号：US20080246053A1
公开(公告)日：2008-10-09
申请号：US10585999
申请日：2005-05-11
申请人： Hisayuki Miki , Hitoshi Takeda
发明人： Hisayuki Miki , Hitoshi Takeda
IPC分类号： H01L33/00 , H01L29/207
CPC分类号： C30B29/403 , C23C16/303 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075
摘要： An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage.The inventive method for producing a p-type Group III nitride semiconductor comprises, during lowering temperature after completion of growth of a Group III nitride semiconductor containing a p-type dopant, immediately after completion of the growth, starting, at a temperature at which the growth has been completed, supply of a carrier gas composed of an inert gas and reduction of the flow rate of a nitrogen source; and stopping supply of the nitrogen source at a time in the course of lowering the temperature.
摘要翻译：本发明的目的是提供一种用于制造可用于生产具有低操作电压和足够高的反向电压的发光器件的p型III族氮化物半导体的方法。本发明的p型III族氮化物半导体的制造方法包括在生长完成后立即生长含有p型掺杂剂的III族氮化物半导体生长完成后的降低温度期间，在生长已经完成，供应由惰性气体组成的载气并降低氮源的流量; 并且在降低温度的过程中停止氮源的供给。

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