专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US07939827B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07939827B2
公开(公告)日：2011-05-10
申请号：US12335058
申请日：2008-12-15
申请人： Tatsuya Arao
发明人： Tatsuya Arao
IPC分类号： H01L29/12
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/66757 , H01L29/66765 , H01L29/78633
摘要： To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.
摘要翻译：为了实现包括能够获得足够的电容器而不降低开口率的电容器元件的半导体器件，其中像素电极被平坦化以便控制液晶取向的缺陷。本发明的半导体器件包括形成在薄膜晶体管上的遮光膜，形成在遮光膜上的电容器绝缘膜，形成在电容器绝缘膜上的导电层，以及形成为这样的像素电极为了与导电层电连接，其中存储电容器元件包括遮光膜，电容器绝缘膜和导电层，由此可以增加用作电容器元件的区域的面积。

92. 发明授权

US07838812B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07838812B2
公开(公告)日：2010-11-23
申请号：US12350271
申请日：2009-01-08
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H01J40/14 , H03F3/08 , H03K17/78 , H04N3/14
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

93. 发明授权

US07791154B2 Photoelectric conversion element and manufacturing method of photoelectric conversion element 有权
标题翻译：光电转换元件及光电转换元件的制造方法
公开(公告)号：US07791154B2
公开(公告)日：2010-09-07
申请号：US12575910
申请日：2009-10-08
申请人： Shinya Sasagawa , Shinya Hasegawa , Hidekazu Takahashi , Tatsuya Arao
发明人： Shinya Sasagawa , Shinya Hasegawa , Hidekazu Takahashi , Tatsuya Arao
IPC分类号： H10L31/075 , H01L31/18
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
摘要翻译：本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残余物导电。光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面的n层，它们不在同一平面。

94. 发明授权

US07772667B2 Photoelectric conversion device and semiconductor device 有权
标题翻译：光电转换器件和半导体器件
公开(公告)号：US07772667B2
公开(公告)日：2010-08-10
申请号：US11383645
申请日：2006-05-16
申请人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
发明人： Yuusuke Sugawara , Kazuo Nishi , Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： H01L31/075
CPC分类号： H01L31/1055 , H01L31/02162 , H01L31/022408 , H01L31/02325
摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
摘要翻译：本发明提供抑制漏电流的光电转换装置。本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分在光电转换层的未被绝缘膜覆盖的区域中去除层。

95. 发明授权

US07718478B2 Manufacturing method for field-effect transistor 有权
标题翻译：场效应晶体管的制造方法
公开(公告)号：US07718478B2
公开(公告)日：2010-05-18
申请号：US11646688
申请日：2006-12-28
申请人： Tatsuya Arao
发明人： Tatsuya Arao
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78648
摘要： To provide a manufacturing method for a field-effect transistor, such as a thin-film transistor, enabling reductions in the number patterning steps and the number of photomasks and improvements in the throughput and the yield. In the method, an oxide film is formed by processing the surface of a crystalline semiconductor with ozone water or hydrogen peroxide water. Using the oxide film thus formed as an etch stop, a gate electrode, a source electrode, and a drain electrode of the field-effect transistor are simultaneously formed from a same starting film in one patterning step by use of one photomask. After forming the gate electrode, the source electrode, and the drain electrode, heating is performed thereon at 800° C. or higher for a predetermined time. Thereby, the contact resistances between the source electrode and the crystalline semiconductor and between the drain electrode and the crystalline semiconductor are reduced, whereby improving the electrical conductivity.
摘要翻译：为了提供诸如薄膜晶体管的场效应晶体管的制造方法，能够减少数量图案化步骤和光掩模的数量以及产量和产量的提高。在该方法中，通过用臭氧水或过氧化氢水处理结晶半导体的表面来形成氧化膜。使用如此形成的氧化膜作为蚀刻停止体，通过使用一个光掩模，在一个图案化步骤中由相同的起始膜同时形成场效应晶体管的栅电极，源电极和漏电极。在形成栅电极，源电极和漏电极之后，在800℃以上进行规定时间的加热。由此，源电极和结晶半导体之间以及漏电极和晶体半导体之间的接触电阻降低，从而提高导电性。

96. 发明授权

US07705283B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US07705283B2
公开(公告)日：2010-04-27
申请号：US11436086
申请日：2006-05-18
申请人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
发明人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： G01J1/44 , H03F3/08 , H01L31/112 , G01R19/00 , H01L31/00 , H04N3/14
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

97. 发明授权

US07659947B2 Liquid crystal display device having gate wiring on interlayer insulting film which is over transistor, and light shielding layer(s) 有权
标题翻译：在晶体管上面的层间绝缘膜上具有栅极布线的液晶显示装置和遮光层，
公开(公告)号：US07659947B2
公开(公告)日：2010-02-09
申请号：US10376158
申请日：2003-02-28
申请人： Tatsuya Arao
发明人： Tatsuya Arao
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1333
CPC分类号： G02F1/133512 , G02F1/1396
摘要： A liquid crystal layer is provided between a pair of substrates, one of the pair of substrates is provided with a pixel region including a TFT and a light shielding layer in which an opening portion is formed, a semiconductor layer composing the TFT is overlapped with the light shielding layer and formed along one side of the opening portion, and an alignment of a liquid crystal molecule is controlled such that light which transmits through the liquid crystal layer is incident as polarized light perpendicular to the one side of the opening portion. The liquid crystal layer is particularly made of more a TN mode liquid crystal.
摘要翻译：液晶层设置在一对基板之间，一对基板中的一个基板设置有包括TFT和遮光层的像素区域，其中形成有开口部分，构成TFT的半导体层与遮光层，并且沿开口部分的一侧形成，并且控制液晶分子的取向，使得透射通过液晶层的光作为与开口部分的一侧垂直的偏振光入射。液晶层特别由TN模式液晶制成。

98. 发明申请

US20090127562A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20090127562A1
公开(公告)日：2009-05-21
申请号：US12335058
申请日：2008-12-15
申请人： Tatsuya Arao
发明人： Tatsuya Arao
IPC分类号： H01L33/00
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/66757 , H01L29/66765 , H01L29/78633
摘要： To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.
摘要翻译：为了实现包括能够获得足够的电容器而不降低开口率的电容器元件的半导体器件，其中像素电极被平坦化以便控制液晶取向的缺陷。本发明的半导体器件包括形成在薄膜晶体管上的遮光膜，形成在遮光膜上的电容器绝缘膜，形成在电容器绝缘膜上的导电层，以及形成为这样的像素电极为了与导电层电连接，其中存储电容器元件包括遮光膜，电容器绝缘膜和导电层，由此可以增加用作电容器元件的区域的面积。

99. 发明申请

US20090126790A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME, AND A SEMICONDUCTOR DEVICE 有权
标题翻译：光电转换装置及其制造方法和半导体器件
公开(公告)号：US20090126790A1
公开(公告)日：2009-05-21
申请号：US12355187
申请日：2009-01-16
申请人： Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi , Tatsuya Arao
发明人： Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi , Tatsuya Arao
IPC分类号： H01L31/0232 , H01L31/0224
CPC分类号： H01L31/1133 , H01L27/14603 , H01L27/14643 , H01L27/14687
摘要： A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
摘要翻译：提供了具有可以抑制静电放电损坏的结构的光传感器。通常，在光接收区域的整个表面上形成透明电极; 然而，在本发明中，不形成透明电极，并且使用光电转换层的p型半导体层和n型半导体层作为电极。因此，在根据本发明的光电传感器中，电阻增加可以抑制静电放电损坏。此外，用作电极的p型半导体层和n型半导体层的位置被保留; 因此，电阻增加，并且可以提高耐受电压。

100. 发明授权

US07534702B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07534702B2
公开(公告)日：2009-05-19
申请号：US11157166
申请日：2005-06-21
申请人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
发明人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/97 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/00
摘要： An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is scattered in the handling of the integrated circuit since the integrated circuit is extremely thin. According to the present invention, multiple openings reaching a peel layer are provided, a material body having a pattern shape that does not cover regions (the openings and a device portion) is provided, and then, a gas or liquid containing fluorine halide is introduced to partially remove the peel layer.
摘要翻译：通过在大玻璃基板上形成由薄膜制成的集成电路并将集成电路传送到另一个背衬来提供可以接收或传输触摸数据，优选不接触的非常小的器件的有效批量生产方法被分割特别是，由于集成电路非常薄，因为集成电路在集成电路的处理中存在散射的威胁，因此难以使用由薄膜制成的集成电路。根据本发明，提供到达剥离层的多个开口，设置具有不覆盖区域（开口和器件部分）的图案形状的材料体，然后引入含有氟化卤的气体或液体以部分地去除剥离层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式