会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明授权
    • Semiconductor device and manufacturing method of the same
    • 半导体器件及其制造方法相同
    • US07495268B2
    • 2009-02-24
    • US11757533
    • 2007-06-04
    • Yoshiaki KatoYoshiharu AndaAkiyoshi Tamura
    • Yoshiaki KatoYoshiharu AndaAkiyoshi Tamura
    • H01L29/812
    • H01L29/8128H01L29/42316H01L29/66863H01L29/778
    • A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
    • 根据本发明的半导体器件包括:半导体衬底; 形成在所述半导体衬底上的沟道层; 在沟道层上形成的施主层; 形成在供体层上的第一肖特基层; 形成在第一肖特基层上的第二肖特基层; 形成在所述第一肖特基层上以与所述第一肖特基层形成肖特基势垒结的第一栅电极; 第一源电极和第一漏电极,其形成为夹着所述第一栅电极并电连接到所述沟道层; 第二栅电极,形成在所述第二肖特基层上,并且由与所述第一栅电极不同的材料制成,以与所述第二肖特基层形成肖特基势垒结; 以及第二源电极和第二漏电极,其形成为夹着所述第二栅极并电连接到所述沟道层。
    • 100. 发明申请
    • Ion trap/time-of-flight mass spectrometer and method of measuring ion accurate mass
    • 离子阱/飞行时间质谱仪和离子精确质量的测量方法
    • US20070069121A1
    • 2007-03-29
    • US11606046
    • 2006-11-30
    • Tadao MimuraYoshiaki KatoToyoharu Okumoto
    • Tadao MimuraYoshiaki KatoToyoharu Okumoto
    • H01J49/00
    • H01J49/42H01J49/0009H01J49/004H01J49/40
    • An ion trap/time-of-flight mass spectrometer, which can perform accurate mass measurement of a product ion based on MS/MS and MSn has an ion source for ionizing a sample, an ion trap capable of temporarily trapping ions, and a time-of-flight mass spectrometer. The ion source produces ions of the sample as a measurement target and ions of a reference sample each having a known mass value. A precursor ion is selected from among the ions of the measurement target sample, and the selected precursor ion is excited and fragmented in the ion trap to produce a product ion. The reference sample ions are introduced to and trapped in the ion trap. The trapped product ion and reference sample ions are expelled out of the ion trap and introduced to the time-of-flight mass spectrometer, thereby obtaining a mass spectrum.
    • 离子阱/飞行时间质谱仪可以基于MS / MS和MS进行产物离子的精确质量测量具有离子源,用于离子化样品,离子阱能力 暂时捕获离子和飞行时间质谱仪。 离子源产生样品的离子作为测量对象,每个参考样品的离子具有已知的质量值。 从测量对象样品的离子中选择前体离子,并且将所选择的前体离子在离子阱中激发并碎裂以产生产物离子。 将参考样品离子引入并捕获在离子阱中。 捕获的产物离子和参考样品离子从离子阱中排出并引入飞行时间质谱仪,从而获得质谱。