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91. 发明申请

US20120193634A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20120193634A1
公开(公告)日：2012-08-02
申请号：US13444768
申请日：2012-04-11
申请人： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jong-In Kim
发明人： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jong-In Kim
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66742 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
摘要翻译：根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

92. 发明申请

US20110204370A1 Thin-Film Transistor Substrate, Method of Manufacturing the Same, and Display Device Including the Same 有权
标题翻译：薄膜晶体管基板及其制造方法以及包括其的显示装置
公开(公告)号：US20110204370A1
公开(公告)日：2011-08-25
申请号：US13027453
申请日：2011-02-15
申请人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
发明人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
IPC分类号： H01L33/08 , H01L29/786 , H01L21/44
CPC分类号： H01L29/78693 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L51/5203
摘要： Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
摘要翻译：提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

93. 发明授权

US07923176B2 Mask and method of manufacturing the same 有权
标题翻译：面膜及其制造方法
公开(公告)号：US07923176B2
公开(公告)日：2011-04-12
申请号：US12035086
申请日：2008-02-21
申请人： Chong-Chul Chai , Mee-Hye Jung , Woo-Geun Lee , Woo-Seok Jeon , Young-Wook Lee , Jung-In Park , Jun-Hyung Souk , Won-Kie Chang , Shi-Yul Kim
发明人： Chong-Chul Chai , Mee-Hye Jung , Woo-Geun Lee , Woo-Seok Jeon , Young-Wook Lee , Jung-In Park , Jun-Hyung Souk , Won-Kie Chang , Shi-Yul Kim
IPC分类号： G03F1/00 , G06C5/00
CPC分类号： G03F1/36 , G03F1/00 , G03F1/50
摘要： A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.
摘要翻译：掩模包括透明基板，遮光层和半色调层。遮光层包括包括第一电极部分，第二电极部分和第三电极部分的源电极图案部分和设置在第二电极部分和第三电极部分之间的漏电极图案部分。半色调层包括对应于源电极图案部分和漏电极图案部分之间的间隔部分的半色调部分和比第二电极部分和第三电极部分的端部更突出的虚拟半色调部分。因此，可以形成对应于薄膜晶体管（TFT）的沟道部分的光致抗蚀剂图案，其厚度均匀，从而防止通道部分的过度蚀刻。

94. 发明申请

US20100203715A1 THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION 有权
标题翻译：薄膜晶体管阵列和制造
公开(公告)号：US20100203715A1
公开(公告)日：2010-08-12
申请号：US12765698
申请日：2010-04-22
申请人： Sang-Gab KIM , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
发明人： Sang-Gab KIM , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
IPC分类号： H01L21/28
CPC分类号： H01L27/124 , G02F2001/13629 , H01L29/458
摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要翻译：本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

95. 发明授权

US07759738B2 Array substrate and method of manufacturing the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US07759738B2
公开(公告)日：2010-07-20
申请号：US12269748
申请日：2008-11-12
申请人： Jang-Soo Kim , Hong-Long Ning , Bong-Kyun Kim , Hong-Sick Park , Shi-Yul Kim , Chang-Oh Jeong , Sang-Gab Kim , Jae-Hyoung Youn , Woo-Geun Lee , Yang-Ho Bae , Pil-Sang Yun , Jong-Hyun Choung , Sun-Young Hong , Ki-Won Kim , Byeong-Jin Lee , Young-Wook Lee , Jong-In Kim , Byeong-Beom Kim , Nam-Seok Suh
发明人： Jang-Soo Kim , Hong-Long Ning , Bong-Kyun Kim , Hong-Sick Park , Shi-Yul Kim , Chang-Oh Jeong , Sang-Gab Kim , Jae-Hyoung Youn , Woo-Geun Lee , Yang-Ho Bae , Pil-Sang Yun , Jong-Hyun Choung , Sun-Young Hong , Ki-Won Kim , Byeong-Jin Lee , Young-Wook Lee , Jong-In Kim , Byeong-Beom Kim , Nam-Seok Suh
IPC分类号： H01L29/04 , H01L29/10 , H01L29/15
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/1218 , H01L27/124 , H01L27/1288
摘要： A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要翻译：栅极线包括形成在基底基板上的第一籽晶层和形成在第一籽晶层上的第一金属层。在基底基板上形成第一绝缘层。在基底基板上形成第二绝缘层。这里，在与栅极线交叉的方向上通过第二绝缘层形成线沟槽。数据线包括形成在线沟槽下方的第二晶种层和形成在线沟槽中的第二金属层。像素电极形成在基底基板的像素区域中。因此，使用绝缘层形成预定深度的沟槽，并且通过电镀方法形成金属层，从而可以形成具有足够厚度的金属线。

96. 发明申请

US20100140610A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100140610A1
公开(公告)日：2010-06-10
申请号：US12556277
申请日：2009-09-09
申请人： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jang-In Kim
发明人： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jang-In Kim
IPC分类号： H01L29/786 , H01L29/12 , H01L21/336
CPC分类号： H01L29/66742 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
摘要翻译：根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

97. 发明申请

US20090152635A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 有权
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20090152635A1
公开(公告)日：2009-06-18
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

98. 发明申请

US20070187741A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS HAVING THE SAME 审中-公开
标题翻译：薄膜晶体管基板，其制造方法和具有该薄膜晶体管基板的显示装置
公开(公告)号：US20070187741A1
公开(公告)日：2007-08-16
申请号：US11690702
申请日：2007-03-23
申请人： Woo-Geun LEE , Hye-Young RYU
发明人： Woo-Geun LEE , Hye-Young RYU
IPC分类号： H01L29/94
CPC分类号： G02F1/1368 , H01L27/1255
摘要： In a thin film transistor substrate, a method of manufacturing the same, and a display apparatus having the same, a thin film transistor, a gate member, and a storage member are formed on an insulating substrate. The gate member has a gate line and a gate electrode electrically connected to the gate line, and the storage member has a storage line, a first storage electrode, and a second storage electrode. A data member is formed on an active layer. The data member includes a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode and a fourth storage electrode overlapped with the second storage electrode. Thus, a capacitance variation of a storage capacitor may be prevented, thereby improving display quality of a display apparatus.
摘要翻译：在绝缘基板上形成薄膜晶体管基板及其制造方法及具有该薄膜晶体管基板的显示装置，薄膜晶体管，栅极部件和存储部件。栅极部件具有与栅极线电连接的栅极线和栅电极，并且存储部件具有存储线，第一存储电极和第二存储电极。在有源层上形成数据元件。数据构件包括与栅极线交叉的数据线，与第一存储电极重叠的第三存储电极和与第二存储电极重叠的第四存储电极。因此，可以防止存储电容器的电容变化，从而提高显示装置的显示质量。

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