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91. 发明申请

US20110269259A1 SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE 有权
标题翻译：固体成像装置，其制造方法和电子装置
公开(公告)号：US20110269259A1
公开(公告)日：2011-11-03
申请号：US13178624
申请日：2011-07-08
申请人： Keiji Tatani , Takuji Matsumoto , Yasushi Tateshita , Fumihiko Koga , Takashi Nagano , Takahiro Toyoshima , Tetsuji Yamaguchi , Keiichi Nakazawa , Naoyuki Miyashita , Yoshihiko Nagahama
发明人： Keiji Tatani , Takuji Matsumoto , Yasushi Tateshita , Fumihiko Koga , Takashi Nagano , Takahiro Toyoshima , Tetsuji Yamaguchi , Keiichi Nakazawa , Naoyuki Miyashita , Yoshihiko Nagahama
IPC分类号： H01L31/02
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/14625 , H01L27/14627 , H01L27/14689 , H01L27/14831
摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.
摘要翻译：一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域在像素部分。埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

92. 发明授权

US07838349B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07838349B2
公开(公告)日：2010-11-23
申请号：US12131826
申请日：2008-06-02
申请人： Takuji Matsumoto , Toshiaki Iwamatsu , Yuuichi Hirano
发明人： Takuji Matsumoto , Toshiaki Iwamatsu , Yuuichi Hirano
IPC分类号： H01L21/00
CPC分类号： H01L21/76264 , H01L21/3143 , H01L21/3185 , H01L21/76283 , H01L21/84
摘要： A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer. With this structure, a semiconductor device comprising an isolation insulating film of PTI structure, which suppresses a floating-body effect and improves isolation performance and breakdown voltage, and a method of manufacturing the semiconductor device can be obtained.
摘要翻译：在覆盖在半导体层的表面上形成的元件的上表面的层间绝缘膜之间形成氮化硅膜。利用这种结构，可以获得包括PTI结构的隔离绝缘膜的半导体器件，其抑制浮体效应并提高隔离性能和击穿电压，并且可以获得半导体器件的制造方法。

93. 发明申请

US20100239310A1 REPLACEMENT UNIT AND IMAGE FORMING DEVICE 有权
标题翻译：更换单元和图像形成装置
公开(公告)号：US20100239310A1
公开(公告)日：2010-09-23
申请号：US12723018
申请日：2010-03-12
申请人： Takuji Matsumoto , Toshio Takiguchi , Shinichi Ohba , Takayuki Yazawa
发明人： Takuji Matsumoto , Toshio Takiguchi , Shinichi Ohba , Takayuki Yazawa
IPC分类号： G03G21/16
CPC分类号： G03G21/1842
摘要： A replacement unit includes a bottom member and a guide groove. The bottom member is supported at one of plural support members. The guide groove provided at the bottom member, is guided by plural protrusions provided at the support member and disposed in a row, and extends in an installation direction along which the replacement unit is installed in a device body from sideward of the device body.
摘要翻译：更换单元包括底部构件和引导槽。底部构件支撑在多个支撑构件中的一个上。设置在底部构件上的引导槽由设置在支撑构件上的多个突起引导并且排成一列，并且沿着装置主体的装置主体的装置主体的安装方向沿设置方向延伸。

94. 发明申请

US20100233861A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE 有权
标题翻译：制造固态成像装置的方法
公开(公告)号：US20100233861A1
公开(公告)日：2010-09-16
申请号：US12717500
申请日：2010-03-04
申请人： Naohiko Kimizuka , Takuji Matsumoto
发明人： Naohiko Kimizuka , Takuji Matsumoto
IPC分类号： H01L21/8238
CPC分类号： H01L27/146 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689
摘要： A method is provided for manufacturing a solid-state imaging device including a semiconductor substrate having a photoelectric conversion portion, a pixel transistor region and a logic circuit region. The method includes the steps of forming a first gate electrode on the semiconductor substrate with a first gate insulating film therebetween, a second gate electrode in the pixel transistor region on the semiconductor substrate with a second gate insulating film therebetween; forming a first insulating layer to cover the first gate electrode, the second gate electrode, a floating diffusion region where a floating diffusion portion is to be formed, and the photoelectric conversion portion; and forming an offset spacer on a sidewall of the first gate electrode by etch back of the first insulating layer in a state where the photoelectric conversion portion, the pixel transistor region and the floating diffusion region are masked.
摘要翻译：提供一种用于制造包括具有光电转换部分，像素晶体管区域和逻辑电路区域的半导体衬底的固态成像器件的方法。该方法包括以下步骤：在半导体衬底上形成第一栅极绝缘膜，在半导体衬底上的像素晶体管区域中的第二栅极电极，其间具有第二栅极绝缘膜; 形成第一绝缘层以覆盖所述第一栅电极，所述第二栅电极，将形成浮动扩散部的浮动扩散区和所述光电转换部; 以及在所述光电转换部分，所述像素晶体管区域和所述浮动扩散区域被掩蔽的状态下通过所述第一绝缘层的回蚀而在所述第一栅电极的侧壁上形成偏移间隔物。

95. 发明授权

US07741679B2 Semiconductor device, method of manufacturing same and method of designing same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07741679B2
公开(公告)日：2010-06-22
申请号：US11866693
申请日：2007-10-03
申请人： Yasuo Yamaguchi , Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Yuuichi Hirano , Takuji Matsumoto , Shoichi Miyamoto
发明人： Yasuo Yamaguchi , Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Yuuichi Hirano , Takuji Matsumoto , Shoichi Miyamoto
IPC分类号： H01L23/62
CPC分类号： H01L21/84 , H01L27/1203
摘要： A partial oxide film with well regions formed therebeneath isolates transistor formation regions in an SOI layer from each other. A p-type well region is formed beneath part of the partial oxide film which isolates NMOS transistors from each other, and an n-type well region is formed beneath part of the partial oxide film which isolates PMOS transistors from each other. The p-type well region and the n-type well region are formed in side-by-side relation beneath part of the partial oxide film which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region adjacent thereto. An interconnect layer formed on an interlayer insulation film is electrically connected to the body region through a body contact provided in the interlayer insulation film. A semiconductor device having an SOI structure reduces a floating-substrate effect.
摘要翻译：在其之间形成的具有阱区的部分氧化膜彼此隔离SOI层中的晶体管形成区域。在部分氧化膜的下部形成有p型阱区，其将NMOS晶体管彼此隔离，并且在部分氧化膜的下部形成n型阱区，其将PMOS晶体管彼此隔离。 p型阱区域和n型阱区域在部分氧化膜的一部分下方并排地形成，其提供NMOS和PMOS晶体管之间的隔离。身体区域与与其相邻的井区域接触。形成在层间绝缘膜上的互连层通过设置在层间绝缘膜中的体接触电连接到体区。具有SOI结构的半导体器件减少浮置衬底效应。

96. 发明授权

US07723790B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07723790B2
公开(公告)日：2010-05-25
申请号：US12208840
申请日：2008-09-11
申请人： Yuuichi Hirano , Shigeto Maegawa , Toshiaki Iwamatsu , Takuji Matsumoto , Shigenobu Maeda , Yasuo Yamaguchi
发明人： Yuuichi Hirano , Shigeto Maegawa , Toshiaki Iwamatsu , Takuji Matsumoto , Shigenobu Maeda , Yasuo Yamaguchi
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/00
CPC分类号： H01L27/1203 , H01L21/84
摘要： An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.
摘要翻译：在硅层（4）的上表面中选择性地形成部分沟槽型隔离绝缘膜（5）。电源线（21）形成在隔离绝缘膜（5）的上方。在电源线（21）的下方，在隔离绝缘膜（5）上形成到达绝缘膜（3）的上表面的完全隔离部（23）。换句话说，半导体器件包括完全隔离绝缘膜，其形成为从硅层（4）的上表面延伸并到达电源线（21）下方的绝缘膜（3）的上表面）。利用这种结构，可以获得能够抑制由电源线的电位变化引起的体区的电位变化的半导体器件。

97. 发明申请

US20100098463A1 DEVELOPING DEVICE AND IMAGE FORMING DEVICE 有权
标题翻译：开发设备和图像形成装置
公开(公告)号：US20100098463A1
公开(公告)日：2010-04-22
申请号：US12409946
申请日：2009-03-24
申请人： Takuji Matsumoto , Kiyoshi Nagamine
发明人： Takuji Matsumoto , Kiyoshi Nagamine
IPC分类号： G03G15/09
CPC分类号： G03G15/0921
摘要： A developing device has: a developer housing chamber in which developer is housed; a developer holding member holding developer by magnetic force; a partitioning wall having an overlapping region that, in a transparent plan view, is positioned upward of the developer holding member and overlaps the developer holding member in an up/down direction; and an opening portion formed in the overlapping region of the partitioning wall. The partitioning wall is a portion of a separating wall of the developer housing chamber, and is provided between the developer housing chamber and the developer holding member.
摘要翻译：显影装置具有：容纳显影剂的显影剂容纳室; 通过磁力保持显影剂的显影剂保持构件; 具有重叠区域的分隔壁，其在透明平面图中位于显影剂保持构件的上方并且在上/下方向上与显影剂保持构件重叠; 以及形成在分隔壁的重叠区域中的开口部。分隔壁是显影剂容纳室的分隔壁的一部分，并且设置在显影剂容纳室和显影剂保持部件之间。

98. 发明授权

US07647010B2 Toner cartridge and image forming apparatus 有权
标题翻译：墨粉盒和成像设备
公开(公告)号：US07647010B2
公开(公告)日：2010-01-12
申请号：US11604769
申请日：2006-11-28
申请人： Hiromitsu Koizumi , Chiharu Nakajima , Takuji Matsumoto , Toyohiko Awano , Shigeki Nishimura , Mutsumi Kikuchi , Yasufumi Kayahara
发明人： Hiromitsu Koizumi , Chiharu Nakajima , Takuji Matsumoto , Toyohiko Awano , Shigeki Nishimura , Mutsumi Kikuchi , Yasufumi Kayahara
IPC分类号： G03G15/08
CPC分类号： G03G15/0879 , G03G15/0872
摘要： The present invention provides a toner cartridge of replaceable type that is removably loaded into an apparatus main body, the toner cartridge including: a first section that is substantially cylindrical shape and at which a toner conveying member is disposed; and a second section that is provided at a substantially central portion in a longitudinal direction of the toner cartridge, the substantially central portion being a portion other than an upstream side in a toner conveyance direction of the first section and a downstream side in the toner conveyance direction of the first section at which a toner supply opening.
摘要翻译：本发明提供了一种可更换型的调色剂盒，其可移除地装载到设备主体中，该调色剂盒包括：第一部分，其基本上为圆柱形形状，调色剂传送部件设置在该第一部分上; 以及第二部分，其设置在调色剂盒的纵向方向上的基本中心部分处，所述基本中心部分是除了所述第一部分的调色剂输送方向上的上游侧和所述调色剂传送器中的下游侧的部分调色剂供应开口的第一部分的方向。

99. 发明授权

US07643777B2 Toner cartridge 有权
标题翻译：墨粉盒
公开(公告)号：US07643777B2
公开(公告)日：2010-01-05
申请号：US11607952
申请日：2006-12-04
申请人： Takuji Matsumoto , Hiromitsu Koizumi , Chiharu Nakajima
发明人： Takuji Matsumoto , Hiromitsu Koizumi , Chiharu Nakajima
IPC分类号： G03G15/08
CPC分类号： G03G15/0879 , G03G15/0872
摘要： A toner cartridge can be attached to and detached from an apparatus main body. The toner cartridge includes an outer housing having a substantially rectangular upper cross section and a substantially semi-circular lower cross section, and an inner housing that is disposed inside of a lower portion of the outer housing and that has a cylindrical shape with an opening formed at its side surface, the inner housing being rotatably supported in the lower portion of the outer housing, and at the opening a bridging portion being formed along a longitudinal direction of the inner housing.
摘要翻译：调色剂盒可以安装到设备主体上并从设备主体上分离。调色剂盒包括具有基本上矩形的上横截面和大致半圆形的下横截面的外壳，以及设置在外壳的下部内侧并具有形成开口的圆筒形状的内壳体在其侧表面处，内壳体可旋转地支撑在外壳体的下部中，并且在开口处具有沿着内壳体的纵向方向形成的桥接部分。

100. 发明授权

US07541644B2 Semiconductor device with effective heat-radiation 有权
标题翻译：具有有效散热的半导体器件
公开(公告)号：US07541644B2
公开(公告)日：2009-06-02
申请号：US10793841
申请日：2004-03-08
申请人： Yuuichi Hirano , Shigenobu Maeda , Takuji Matsumoto , Takashi Ipposhi , Shigeto Maegawa
发明人： Yuuichi Hirano , Shigenobu Maeda , Takuji Matsumoto , Takashi Ipposhi , Shigeto Maegawa
IPC分类号： H01L29/72
CPC分类号： H01L23/481 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L29/78639 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has a silicon layer (SOI layer) (12) formed through a silicon oxide film (11) on a support substrate (10). A transistor (T1) is formed in the SOI layer (12). The wiring (17a) is connected with a source of the transistor (T1) through a contact plug (15a). A back metal (18) is formed on an under surface (back surface) of the support substrate (10) and said back metal (18) is connected with the wiring (17a) through a heat radiating plug (16). The contact plug (15a), the heat radiating plug (16) the wiring (17a) and the back metal (18) is made of a metal such as aluminum, tungsten and so on which has a higher thermal conductivity than that of the silicon oxide film (11) and the support substrate (10).
摘要翻译：半导体器件具有通过支撑衬底（10）上的氧化硅膜（11）形成的硅层（SOI层）（12）。在SOI层（12）中形成晶体管（T1）。布线（17a）通过接触插塞（15a）与晶体管（T1）的源极连接。背衬金属（18）形成在支撑基板（10）的下表面（背面）上，背面金属（18）通过散热塞（16）与布线17a连接。接触插头（15a），散热塞（16），布线（17a）和背金属（18）由诸如铝，钨等的金属制成，其具有比硅的热导率更高的导热性氧化膜（11）和支撑基板（10）。

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