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    • 100. 发明申请
    • Method for manufacturing an infrared detection element
    • 红外线检测元件的制造方法
    • US20050006584A1
    • 2005-01-13
    • US10901110
    • 2004-07-29
    • Takashi KawakuboKazuhide AbeKenya Sano
    • Takashi KawakuboKazuhide AbeKenya Sano
    • G01J1/02G01J5/02G01J5/34H01L37/02G01J5/10H01L37/00
    • H01L37/02
    • The present invention provides an infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 μm having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectioally oriented layer. Distortion of the single-crystalline layer or a unidirectioally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge is changed by changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5. The amount of the charge is detected from the first and the second electrode layer4, 6. With the infrared detection element, an accurate temperature measurement is possible even in the neighborhood of the Curie temperature due to a discontinuous primary phase transition.
    • 本发明提供一种红外线检测元件,其具有厚度为50nm〜10μm的具有主面的单晶基底层3,形成在单晶基底层3的主面上的第一电极层4, 形成在第一电极层4上并由单晶层或单向取向层构成的铁电体层5。 在与单晶基底层3的主表面平行的表面中的单晶层或单向取向层的失真由单晶基底层3弹性约束。红外线检测元件还具有第二电极层 形成在铁电层5上的电荷量。由于红外光照射到铁电层5而引起的温度变化,电荷量被改变。从第一和第二电极层4,6检测电荷量。 红外线检测元件,由于不连续的初级相变,即使在居里温度附近也可进行精确的温度测量。