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    • 91. 发明专利
    • DE1259311B
    • 1968-01-25
    • DEN0027406
    • 1965-09-28
    • NORTH AMERICAN AVIATION INC
    • MURBACH EARL WESLEY
    • C01B31/30
    • 1,127,041. Uranium monocarbide. NORTH AMERICAN AVIATION Inc. 22 Sept., 1965 [2 Oct., 1964], No. 40445/65. Heading C1A. Uranium monocarbide is produced by contactng uranium tetrafluoride with silicon dioxide and carbon at a temperature of at least 400‹ C. under an inert gas or vacuum environment until the resulting SiF 4 gas is removed, and then increasing the temperature to at least 1300‹ C. and maintaining this temperature until uranium monocarbide is completely obtained. The first step may be carried out for a period of 1-4 hours in argon at a pressure below atmospheric, and the second step conducted for a period of 1-5 hours under vacuum. The UF 4 , SiO 2 and C are in a mol ratio of about 1 : 1 : 3. The uranium monocarbide product is a partially sintered mass of black material which may be arc-melted and cast into UC fuel elements. Additional quantities of carbon and/or uranium may be added during the process to ensure a strictly stoichiometric product.
    • 92. 发明专利
    • High power dissipation laser structure
    • GB1100243A
    • 1968-01-24
    • GB2944466
    • 1966-06-30
    • NORTH AMERICAN AVIATION INC
    • H01S3/04H01S3/042H01S3/07
    • 1,100,243. Lasers. NORTH AMERICAN AVIATION Inc. 30 June, 1966 [30 June, 1965], No. 29444/66. Heading H1C. A laser comprises a plurality of bodies of laser active material spaced apart along the laser optical axis to form coolant channels between the bodies. In the arrangement of Fig. 1, a water-cooled pump flash tube 28 is supported in parallel relationship with a laser hollow elongated support tube 34 extending the full length of an outer closed tube 20. The active medium of Nd +3 glass, ruby, Nd +3 doped calcium tungstate or Nd +3 doped YAG is in the form of a plurality of circular discs 36 which discs are supported on their thin edges parallel to each other at Brewster's angle in a cut-away upper portion of the support tube 34. The support tube 34 is connected to a source of coolant which flows into the interior of the support tube 34 flows through the spaces between the laser discs 36 and into the volume around the flash tube 28 before being removed through an outlet. The ends of the laser support tube are sealed by mirrors 48 or alternatively external mirrors may be employed. In the arrangement of Fig. 1A the flash tube 28 is provided with an independent cooling system 60 forming a parallel arm with the coolant system for the laser structure. In the arrangement of Fig. 2 (not shown), the flash tube (60) is positioned along the optical axis of the device and surrounding and spaced from the lamp is a tubular laser segment supporting member (64) having a series of grooves in its inner surface which grooves support the annular laser segments in parallel arrangement normal to the optical axis, the flash tube passing through the centres of the segments. A plurality of ducts (68) connect the peripheral volume of the support tube with the channels (70) between the laser segments and in operation a coolant having a refractive index the same as the laser active medium flows along the flash tube and through the channels (70). The laser segments may be arranged at Brewster's angle, Fig. 3 (not shown), and may be square or triangular as well as circular as shown. The coolant may flow inwardly across the laser segment faces before cooling the lamp and helical lamps may be employed. A plurality of stacks may be arranged around a central flash lamp and would be optically interconnected by prisms. Alternatively, a plurality of spaced laser stacks could be arranged with flash lamps located between each adjacent pair of stacks.
    • 95. 发明专利
    • FR1501313A
    • 1967-11-10
    • FR83994
    • 1966-11-17
    • NORTH AMERICAN AVIATION INC
    • C30B25/02H01L21/00
    • 1,176,871. Epitaxial deposition. NORTH AMERICAN ROCKWELL CORP. Feb.1, 1967 [Feb.3, 1966], No.4794/67. Heading C7F. [Also in Division C1 ] In a process of epitaxial deposition of a semiconductor on a single crystal substrate, a densely nucleated first semi-conductor layer, formed by thermal decomposition of a hydride, is applied initially, before the main part of the semi-conductor film is added by thermal decomposition of a halide. Both the hydride and the halide may be carried in a hydrogen stream. The substrate may be sapphire, Be oxide, Mg oxide, Si, Ge, B, chrysoberyl, Ca fluoride, a group III-V compound or a group II-VI compound. Ge may be deposited from germane or other Ge hydrides, followed by trichlorogermane or Ge tetrahalides. Si and B may also be deposited. Semi-conductor devices may be fabricated in the films so formed.
    • 96. 发明专利
    • High frequency diode
    • GB1087363A
    • 1967-10-18
    • GB3698865
    • 1965-08-27
    • NORTH AMERICAN AVIATION INC
    • ANDERSON DEAN BROWNAUGUST RUDOLF ROBERTAUKLAND JERRY CARRPALMQUIST RICHARD LEE
    • H01L21/24H01L29/00
    • 1,087,363. High-frequency diode. NORTH AMERICAN AVIATION Inc. Aug. 27, 1965, No. 36988/65. Heading H1K. [Also in Division H3] A high-frequency diode for operation down to 10 GHz, comprises a body of semi-conductor material of one conductivity type, a diffused island of opposite conductivity and an ohmic connection surrounding the island, the depth of the diffused junction being not less than " skin depth " at the lower end of the operating frequency whereby current flow through the junction is limited to the periphery of the island. This type of diode is said to have low capacitance. Skin depth is defined as the depth at which the field strength is 37% of the field strength at the surface of the material. A slab 12c of N-type GaAs or Si has a diffused island 30 of P-type material formed therein which is surrounded by an ohmic contact of gold 34. A gold contact 38 is used on wire 36 while a film of silicon oxide 40 covers the slab 12c. The gold film 34 may be extended to cover the sides of slab 12c (as in Figs. 4 and 5, not shown) whilst the island 30 may be oval, square, star or rosette. A light-sensitive diode (Fig. 6, not shown) may also be made wherein the capacitance is varied according to the light received. Other forms of diode may be light emitting, switching and backward diodes. In another embodiment a varactor diode is used in a parametric amplifier (Fig. 4, not shown), the slab 12c acting as a resonant cavity.
    • 99. 发明专利
    • FR1494647A
    • 1967-09-08
    • FR78040
    • 1966-09-28
    • NORTH AMERICAN AVIATION INC
    • C01B31/00C01B31/30C04B35/524C04B35/528C04B35/532C04B35/573C04B35/58D01F9/24
    • 1,156,041. Carbon bodies using polyaromatic compounds; silicon carbide. NORTH AMERICAN AVIATION Inc. 15 Sept., 1966 [1 Oct., 1965], No. 41241/66. Heading C1A. [Also in Division C5] A polyaromatic compound defined as a polymer of an aromatic monomer in which the monomer units are joined together by direct links between the carbon atoms of the aromatic rings of the monomer units is compacted and then pyrolized. Polytoluylene, polynaphthylene, and polyphenylene are given as examples of polyaromatic compounds. Preferably a pressure greater than 1000 p.s.i. is used during the compaction, and a temperature of 650‹ to 2500‹ C. in the pyrolysis, the residence time of the compact in the furnace being generally 1 hour. In the examples, an argon atmosphere is used in the furnace. The product is said to be similar to graphite, but is harder and stronger. Fillers may be mixed with the polyaromatic material before pressing. These fillers may be graphite, boron or for example, metallic borides, carbides and nitrides which latter oxidize during pyrolysis to give on the resulting body an oxidation-resistant coating. Silicon which will react to form silicon carbide during pyrolysis may be mixed with the polymer. The mixture of polymer and filler may be moulded into articles, e.g. pipes and bricks at the compression stage.