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91. 发明申请

US20100016001A1 DUAL MODE PHONE AND SECURITY KEY SETTING METHOD 审中-公开
标题翻译：双模式电话和安全关键设置方法
公开(公告)号：US20100016001A1
公开(公告)日：2010-01-21
申请号：US12483230
申请日：2009-06-11
申请人： SHU-MIN YANG
发明人： SHU-MIN YANG
IPC分类号： H04W4/12 , H04M1/00
CPC分类号： H04W4/12 , H04L63/18 , H04W84/12 , H04W88/06
摘要： A dual mode phone communicating via a wireless local area network (WLAN) includes a WLAN module, a mobile communication module, and a short message module. The WLAN module communicates via the WLAN and stores a current security key and security mode communicating via the WLAN. The mobile communication module receives a short message via a wireless wide area network, and the short message includes the updated security key and security mode. The short message module receives the short message from the mobile communication module, prompts a user to determine if the current security key and security mode stored in the WLAN module need to be updated, and transmits the updated security key and security mode to the WLAN module if so.
摘要翻译：通过无线局域网（WLAN）通信的双模式电话包括WLAN模块，移动通信模块和短消息模块。 WLAN模块通过WLAN进行通信，并存储当前的安全密钥和通过WLAN进行通信的安全模式。移动通信模块通过无线广域网接收短消息，短消息包括更新的安全密钥和安全模式。短消息模块从移动通信模块接收短消息，提示用户确定是否需要更新存储在WLAN模块中的当前安全密钥和安全模式，并将更新后的安全密钥和安全模式发送给WLAN模块如果是这样。

92. 发明申请

US20100005268A1 MAINTAINING CORRESPONDING RELATIONSHIPS BETWEEN CHAT TRANSCRIPTS AND RELATED CHAT CONTENT 有权
标题翻译：维持CHAT转录与相关内容之间的相关关系
公开(公告)号：US20100005268A1
公开(公告)日：2010-01-07
申请号：US12494582
申请日：2009-06-30
申请人： MIN YANG , Chang Yan Chi , Yu Hang Gao , Wen Peng Xiao
发明人： MIN YANG , Chang Yan Chi , Yu Hang Gao , Wen Peng Xiao
IPC分类号： G06F12/06 , G06F3/048 , G06F15/16
CPC分类号： H04L51/04 , H04L12/1831
摘要： A method, apparatus, and system for maintaining corresponding relationships between at least one chat transcript and related chat content in an instant messaging system may include establishing a chat session in the instant messaging system. Corresponding chat content may be displayed synchronously according to a changed address of the chat content. The changed address of the chat content may be inserted into a chat transcript, and the chat transcript may be segmented into at least two segments to create a segmented chat transcript. The segmented chat transcript and corresponding relationship between the changed address of the chat content and corresponding chat transcript segments may be stored.
摘要翻译：用于在即时消息系统中保持至少一个聊天记录和相关聊天内容之间的对应关系的方法，装置和系统可以包括在即时消息系统中建立聊天会话。相应的聊天内容可以根据聊天内容的改变的地址同步地显示。可以将聊天内容的改变的地址插入到聊天记录中，并且聊天记录可以被分割成至少两个段以创建分段的聊天记录。可以存储分段的聊天记录和聊天内容的改变的地址和相应的聊天记录片段之间的对应关系。

93. 发明申请

US20090315247A1 SHEET-FEEDING SCANNING APPARATUS HAVING MECHANISM FOR FEEDING BUSINESS CARD 有权
标题翻译：具有送货机制的纸张送料扫描装置
公开(公告)号：US20090315247A1
公开(公告)日：2009-12-24
申请号：US12197862
申请日：2008-08-25
申请人： Chung-Kai Wang , Chao-Min Yang , Wen-An Huang , Wei-Hsun Hsu
发明人： Chung-Kai Wang , Chao-Min Yang , Wen-An Huang , Wei-Hsun Hsu
IPC分类号： B65H5/00
CPC分类号： B65H3/44 , B65H5/26 , B65H2701/1914 , B65H2801/39 , H04N1/00567 , H04N1/00588 , H04N1/00591 , H04N1/00602 , H04N1/00623 , H04N1/00631 , H04N1/0405 , H04N1/121 , H04N1/193
摘要： The present invention relates to a sheet-feeding scanning apparatus having a business card feeding mechanism. The sheet-feeding scanning apparatus is adapted for scanning an image of an ordinary document or a business card. The sheet-feeding scanning apparatus includes a scanning module, an ordinary document input tray, an ordinary document pick-up roller assembly, an ejecting tray, a first channel, a second channel, a transfer roller assembly, a business card input tray and a business card pick-up roller assembly. The business card feeding mechanism can provide a relatively flat feeding and scanning channel for the business card such that the bending degree of the business card during transportation is reduced.
摘要翻译：本发明涉及一种具有名片输送机构的送纸扫描装置。送纸扫描装置适用于扫描普通文件或名片的图像。送纸扫描装置包括扫描模块，普通文件输入盘，普通拾取辊组件，排出托盘，第一通道，第二通道，转印辊组件，名片输入托盘和名片拾取辊组件。名片进纸机构可以为名片提供相对平坦的进纸和扫描通道，使得名片在运输过程中的弯曲程度降低。

94. 发明授权

US07629233B2 Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement 失效
公开(公告)号：US07629233B2
公开(公告)日：2009-12-08
申请号：US11859889
申请日：2007-09-24
申请人： Kerry Bernstein , Jeffery Sleight , Min Yang
发明人： Kerry Bernstein , Jeffery Sleight , Min Yang
IPC分类号： H01L29/72
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L27/0922 , H01L27/1207
摘要： The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of circuits built from the combination of the SOI and bulk-Si region FETs.

95. 发明申请

US20090270253A1 Composite metal oxide adsorbent for fluoride removal 有权
标题翻译：用于氟化物去除的复合金属氧化物吸附剂
公开(公告)号：US20090270253A1
公开(公告)日：2009-10-29
申请号：US12150758
申请日：2008-04-29
申请人： Min Yang , Xiaomei Wu , Yu Zhang , Xiaomin Dou
发明人： Min Yang , Xiaomei Wu , Yu Zhang , Xiaomin Dou
IPC分类号： B01J20/00
CPC分类号： B01J20/06 , B01J20/041 , B01J20/08 , B01J20/3021 , B01J20/3071 , B01J20/3078 , B01J2220/42
摘要： The invention provides a composite metal oxide adsorbent for fluoride removal and the preparation method thereof. Said composite metal oxide adsorbent for fluoride removal comprises: 0.05-0.15 molar parts of transition metal, 0.2-0.6 molar parts of Al and/or Mg, and 0.05-0.15 molar parts of rare earth metal. The composite metal oxide adsorbent for fluoride removal has a saturation adsorption capacity on fluorine in water of up to 229 mg/g, under a neutral condition.
摘要翻译：本发明提供一种用于氟化物去除的复合金属氧化物吸附剂及其制备方法。用于除氟的所述复合金属氧化物吸附剂包括：0.05-0.15摩尔份的过渡金属，0.2-0.6摩尔份的Al和/或Mg和0.05-0.15摩尔份的稀土金属。用于氟化物去除的复合金属氧化物吸附剂在中性条件下具有高达229mg / g的水中的氟的饱和吸附能力。

96. 发明授权

US07558505B2 Image forming apparatus and method of sensing printing medium jam therein 有权
标题翻译：图像形成装置和感测打印介质卡纸的方法
公开(公告)号：US07558505B2
公开(公告)日：2009-07-07
申请号：US11493676
申请日：2006-07-27
申请人： Jung-min Yang
发明人： Jung-min Yang
IPC分类号： G03G15/20 , G03G15/00
CPC分类号： G03G15/70 , G03G21/1638 , G03G2215/00628 , G03G2221/1675
摘要： An image forming apparatus and a method of sensing a printing medium jam in the image forming apparatus. The image forming apparatus includes a developing unit, a transfer unit, a fixing unit, a feed-out unit, a lower cover to come in contact with a printing medium when the printing medium is jammed on a feed path and which opens upwards when a pressure of the printing medium caused by the printing medium jam is greater than a predetermined reference value, an upper cover to be opened by the contact of the lower cover when the lower cover opens, and a printing medium jam detection unit operated by the upper cover.
摘要翻译：一种图像形成装置和一种感测图像形成装置中的打印介质卡纸的方法。图像形成装置包括显影单元，转印单元，定影单元，送出单元，当打印介质卡在进给路径上时与打印介质接触的下盖，当下一个打印介质由打印介质堵塞引起的打印介质的压力大于预定的参考值，当下盖打开时通过下盖的接触而打开的上盖以及由上盖操作的打印介质卡纸检测单元。

97. 发明授权

US07482216B2 Substrate engineering for optimum CMOS device performance 失效
标题翻译：基板工程，实现最佳的CMOS器件性能
公开(公告)号：US07482216B2
公开(公告)日：2009-01-27
申请号：US11474774
申请日：2006-06-26
申请人： Victor W. C. Chan , Meikei Ieong , Min Yang
发明人： Victor W. C. Chan , Meikei Ieong , Min Yang
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807
摘要： An integrated semiconductor structure having different types of complementary metal oxide semiconductor devices (CMOS), i.e., PFETs and NFETs, located atop a semiconductor substrate, wherein each CMOS device is fabricated such that the current flow for each device is optimal is provided. Specifically, the structure includes a semiconductor substrate that has a (110) surface orientation and a notch pointing in a direction of current flow; and at least one PFET and at least one NFET located on the semiconductor substrate. The at least one PFET has a current flow in a direction and the at least one NFET has a current flow in a direction. The direction is perpendicular to the direction. A method of fabricating such as integrated semiconductor structure is also provided.
摘要翻译：提供了位于半导体衬底顶部的具有不同类型的互补金属氧化物半导体器件（CMOS）即PFET和NFET的集成半导体结构，其中每个CMOS器件被制造成使得每个器件的电流是最佳的。具体地，该结构包括具有（110）表面取向的半导体衬底和指向电流<001>方向的凹口; 以及位于半导体衬底上的至少一个PFET和至少一个NFET。所述至少一个PFET具有沿<110>方向的电流，并且所述至少一个NFET具有沿<100>方向的电流。 <110>方向垂直于<100>方向。还提供了诸如集成半导体结构的制造方法。

98. 发明授权

US07465992B2 Field effect transistor with mixed-crystal-orientation channel and source/drain regions 有权
标题翻译：具有混晶取向沟道和源极/漏极区的场效应晶体管
公开(公告)号：US07465992B2
公开(公告)日：2008-12-16
申请号：US11116053
申请日：2005-04-27
申请人： Joel P. Desouza , Devendra K. Sadana , Katherine L. Saenger , Chun-yung Sung , Min Yang , Haizhou Yin
发明人： Joel P. Desouza , Devendra K. Sadana , Katherine L. Saenger , Chun-yung Sung , Min Yang , Haizhou Yin
IPC分类号： H01L29/06
CPC分类号： H01L29/6659 , H01L21/26506 , H01L21/26513 , H01L21/7624 , H01L21/823807 , H01L21/8258 , H01L27/0605 , H01L27/0922 , H01L27/1203 , H01L29/045 , H01L29/66636 , H01L29/7833
摘要： Hybrid orientation substrates allow the fabrication of complementary metal oxide semiconductor (CMOS) circuits in which the n-type field effect transistors (nFETs) are disposed in a semiconductor orientation which is optimal for electron mobility and the p-type field effect transistors (pFETs) are disposed in a semiconductor orientation which is optimal for hole mobility. This invention discloses that the performance advantages of FETs formed entirely in the optimal semiconductor orientation may be achieved by only requiring that the device's channel be disposed in a semiconductor with the optimal orientation. A variety of new FET structures are described, all with the characteristic that at least some part of the FET's channel has a different orientation than at least some part of the FET's source and/or drain. Hybrid substrates into which these new FETs might be incorporated are described along with their methods of making.
摘要翻译：混合定向衬底允许制造互补金属氧化物半导体（CMOS）电路，其中n型场效应晶体管（nFET）以优选的电子迁移率的半导体取向设置，并且p型场效应晶体管（pFET）以半导体方向设置，其对于空穴迁移率是最佳的。本发明公开了完全形成在最佳半导体取向中的FET的性能优点可以通过仅需要将器件的沟道设置在具有最佳取向的半导体中来实现。描述了各种新的FET结构，其特征在于，至少部分FET通道的FET的源极和/或漏极的至少一部分具有不同的取向。可以并入其中可并入这些新的FET的混合基板及其制造方法。

99. 发明授权

US07462525B2 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain 有权
标题翻译：在双轴压缩应变下，增强了<110> Si中的电子和空穴迁移率
公开(公告)号：US07462525B2
公开(公告)日：2008-12-09
申请号：US11924024
申请日：2007-10-25
申请人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
发明人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
IPC分类号： H01L21/8234
CPC分类号： H01L29/7842 , H01L21/823807 , H01L29/045 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7846 , H01L29/78684
摘要： The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
摘要翻译：本发明提供了具有增强的电子和空穴迁移率的半导体材料，其包含具有<110>晶体取向和双轴压缩应变的含Si层。本文中使用的术语“双轴压应力”来描述在制造半导体材料期间由含Si层引起的纵向压应力和横向应力引起的净应力。本发明的另一方面涉及形成本发明的半导体材料的方法。本发明的方法包括提供含硅<110>层的步骤; 并在含硅<110>层中产生双轴应变。

100. 发明授权

US07439542B2 Hybrid orientation CMOS with partial insulation process 失效
标题翻译：混合定向CMOS与部分绝缘工艺
公开(公告)号：US07439542B2
公开(公告)日：2008-10-21
申请号：US10958717
申请日：2004-10-05
申请人： Min Yang
发明人： Min Yang
IPC分类号： H01L29/04
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/1207
摘要： The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In accordance with the present invention, junction capacitance of one of the devices is improved in the present invention by forming the source/drain diffusion regions of the device in an epitiaxial semiconductor material such that they are situated on a buried insulating layer that extends partially underneath the body of the second semiconductor device. The second semiconductor device, together with the first semiconductor device, is both located atop the buried insulating layer. Unlike the first semiconductor device in which the body thereof is floating, the second semiconductor device is not floating. Rather, it is in contact with an underlying first semiconducting layer.
摘要翻译：本发明提供一种集成半导体器件的方法，使得在混合衬底的特定晶体取向上形成不同类型的器件。根据本发明，通过在外延半导体材料中形成器件的源极/漏极扩散区域，使得它们位于在部分下方延伸的掩埋绝缘层上，从而在本发明中提高了器件之一的结电容第二半导体器件的主体。第二半导体器件与第一半导体器件一起位于掩埋绝缘层的上方。与其主体浮动的第一半导体器件不同，第二半导体器件不浮动。而是与底层的第一半导体层接触。

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