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91. 发明授权

US06214710B1 Method for a semiconductor device having reduced contact resistance and leakage 有权
标题翻译：具有降低的接触电阻和泄漏的半导体器件的方法
公开(公告)号：US06214710B1
公开(公告)日：2001-04-10
申请号：US09207088
申请日：1998-12-07
申请人： Kyung-Ho Park , Chih-Chen Cho , Ming Jang Hwang
发明人： Kyung-Ho Park , Chih-Chen Cho , Ming Jang Hwang
IPC分类号： H01L213205
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： A method of forming a semiconductor device includes separating a semiconductor gate body from the outer surface of the substrate by a gate insulator layer, forming a conductive drain region in the outer surface of the substrate and spaced apart from the gate conductor body, and forming a conductive source region in the outer surface of the substrate and spaced apart from the gate conductor body opposite the conductive drain region to define a channel region in the substrate disposed inwardly from the gate body and the gate insulator layer. The method also includes depositing a metal buffer layer over the conductive source region and conductive drain region, depositing a metal layer over the metal buffer layer, and reacting the metal layer and metal buffer layer with the conductive source region and conductive drain region to form respective first and second silicide regions.
摘要翻译：形成半导体器件的方法包括：通过栅极绝缘体层将半导体栅极本体与衬底的外表面分离，在衬底的外表面中形成导电漏区，并与栅极导体本体间隔开，形成导电源区域，并且与栅极导体本体相对的导电漏极区域隔开，以限定衬底中的沟道区，该沟道区域从栅极本体和栅极绝缘体层向内设置。该方法还包括在导电源区和导电漏极区上沉积金属缓冲层，在金属缓冲层上沉积金属层，并使金属层和金属缓冲层与导电源区和导电漏区反应形成相应的第一和第二硅化物区域。

92. 发明授权

US06093638A Method of forming an electrical contact in a substrate 有权
标题翻译：在基板中形成电接触的方法
公开(公告)号：US06093638A
公开(公告)日：2000-07-25
申请号：US210063
申请日：1998-12-10
申请人： Chih-Chen Cho , Kyung-Ho Park
发明人： Chih-Chen Cho , Kyung-Ho Park
IPC分类号： C23C16/34 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28562 , H01L21/76877
摘要： A TiN.sub.x layer is formed by disposing a substrate (18) in a chamber (12). A first reactant gas (40) comprising Ti, a second reactant gas (42) and a third reactant gas (44) comprising N are introduced into the chamber (12). By controlling the ratio of the first, second and third reactant gasses (40, 42, 44), TiN.sub.x is deposited onto a surface (28) of the substrate (18), where x is between zero and one.
摘要翻译：通过将衬底（18）设置在腔室（12）中来形成TiNx层。将包含Ti的第一反应气体（40），包含N的第二反应气体（42）和第三反应气体（44）引入到室（12）中。通过控制第一，第二和第三反应物气体（40,42,44）的比例，将TiNx沉积到衬底（18）的表面（28）上，其中x在0和1之间。

93. 发明授权

US5733793A Process formation of a thin film transistor 失效
标题翻译：薄膜晶体管的工艺形成
公开(公告)号：US5733793A
公开(公告)日：1998-03-31
申请号：US796141
申请日：1997-02-06
申请人： Yoon-Ho Song , Kyung-Ho Park , Kee-Soo Nam
发明人： Yoon-Ho Song , Kyung-Ho Park , Kee-Soo Nam
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L21/786
CPC分类号： H01L29/6675 , H01L21/2022 , H01L29/66757 , H01L29/78645 , H01L29/78621 , H01L29/78675 , Y10S438/909
摘要： A process for formation of a thin film transistor which can be usefully applied to a high picture quality active matrix liquid crystal display is disclosed. Particularly, a process for formation of an improved polysilicon thin film transistor is disclosed. In the process for formation of a polysilicon thin film transistor, the solid phase crystallization of a non-crystalline silicon is carried out under a high pressure oxygen atmosphere, and therefore, the solid phase crystallization time for a non-crystalline silicon is shortened so as to improve the productivity, and the grain size of the polysilicon is made more uniform so as improve the electrical characteristics of the TFT (thin film transistor).
摘要翻译：公开了一种用于形成可以有效地应用于高画质有源矩阵液晶显示器的薄膜晶体管的工艺。特别地，公开了一种用于形成改进的多晶硅薄膜晶体管的工艺。在形成多晶硅薄膜晶体管的过程中，在高压氧气氛下进行非晶硅的固相结晶，因此非晶硅的固相结晶时间缩短，因此提高生产率，并且使多晶硅的晶粒尺寸更均匀，从而提高TFT（薄膜晶体管）的电特性。

94. 发明授权

US5605858A Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes 失效
标题翻译：形成高介电常数材料电极的方法包括与电极相同材料的导电侧壁间隔物
公开(公告)号：US5605858A
公开(公告)日：1997-02-25
申请号：US483804
申请日：1995-06-07
申请人： Yasushiro Nishioka , Scott R. Summerfelt , Kyung-ho Park , Pijush Bhattacharya
发明人： Yasushiro Nishioka , Scott R. Summerfelt , Kyung-ho Park , Pijush Bhattacharya
IPC分类号： H01L21/02 , H01L29/51 , H01L29/92 , H01L21/70
CPC分类号： H01L29/516 , H01L28/60 , H01L28/55
摘要： Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to form a top surface with rounded corners on which HDC material can be deposited without substantial cracking. An important aspect of the present invention is that the sidewall spacer does not reduce the electrical contact surface area between the lower electrode and the HDC material layer as compared to a similar structure containing a lower electrode without a sidewall spacer. One embodiment of the present invention is a microelectronic structure comprising a supporting layer (e.g. Si substrate 30) having a principal surface, a lower electrode overlying the principal surface of the supporting layer, and a high-dielectric-constant material layer (e.g. BST 44) overlying the top surface of the lower electrode. The lower electrode comprises an adhesion layer (e.g. TiN 36), an unreactive layer (e.g. Pt 42), a sidewall spacer (e.g. SiO.sub.2 40) and a top surface, with the sidewall spacer causing the top surface to have a rounded corner. The rounded corner of the top surface minimizes crack formation in the high-dielectric-constant material layer.
摘要翻译：通常，本发明利用包括侧壁间隔物的下电极来形成具有圆角的顶表面，在其上可沉积HDC材料而没有实质的开裂。本发明的一个重要方面是，与不含侧壁间隔物的下电极相似的结构相比，侧壁间隔物不会减小下电极和HDC材料层之间的电接触表面积。本发明的一个实施例是一种微电子结构，其包括具有主表面的支撑层（例如Si衬底30），覆盖在支撑层的主表面上的下电极和高介电常数材料层（例如BST 44 ）覆盖下电极的顶表面。下电极包括粘合层（例如TiN 36），非反应层（例如Pt 42），侧壁间隔物（例如SiO 2 40）和顶表面，侧壁间隔物使顶表面具有圆角。顶表面的圆角最小化高介电常数材料层中的裂纹形成。

95. 发明授权

US5379506A Device for removing/inserting an ozone filter from and into an electrophotographic apparatus 失效
标题翻译：用于从电子照相设备中去除/插入臭氧过滤器的装置
公开(公告)号：US5379506A
公开(公告)日：1995-01-10
申请号：US150737
申请日：1993-11-12
申请人： Kyung-Ho Park
发明人： Kyung-Ho Park
IPC分类号： B01D46/10 , B01D46/42 , G03G21/20 , B23P11/02
CPC分类号： B01D46/0005 , B01D46/10 , G03G21/206 , B01D2265/028 , Y10T29/49824 , Y10T29/49872 , Y10T29/49876
摘要： A process and device enabling easy and reliable placement of an ozone filter (4) from and into a frame member (1) of an electrophotographic apparatus. The device uses a pair of slots (3) formed on both sides of a filter mounting recess (2) and a filter holder (5) which includes, as a unit, a portion provided with the ozone filter (4), a pair of tension members (6) with raised edges for engaging with the pair of slots to affix the filter holder within the filter mounting recess (2) when the filter holder (5) is inserted into the filter mounting recess (2), and grip members (8) for handling the filter holder (5). Grip members (8), when pressed towards each other, produce a tension and allow the filter holder (4) to be quickly and easily removed from or inserted into the filter mounting recess (2).
摘要翻译：一种能够将臭氧过滤器（4）从电子照相设备的框架构件（1）中放入或放置到其中的方法和装置。该装置使用形成在过滤器安装凹部（2）的两侧的一对槽（3）和过滤器保持器（5），其包括设置有臭氧过滤器（4）的部分作为一个单元，一对张紧构件（6），其具有用于与所述一对狭槽接合的凸起边缘，以将过滤器保持器（5）插入过滤器安装凹部（2）中时将过滤器保持器固定在过滤器安装凹部（2）内，并且夹持构件 8）用于处理过滤器保持器（5）。夹紧构件（8）当彼此挤压时产生张力并允许过滤器保持器（4）快速且容易地从过滤器安装凹部（2）中移除或插入到过滤器安装凹部（2）中。

96. 发明授权

US4914080A Method for fabricating superconductive film 失效
标题翻译：制造超导膜的方法
公开(公告)号：US4914080A
公开(公告)日：1990-04-03
申请号：US300889
申请日：1989-01-24
申请人： Kohta Yoshikawa , Naoki Awaji , Kyung-ho Park , Nagisa Ohsako , Seigen Ri
发明人： Kohta Yoshikawa , Naoki Awaji , Kyung-ho Park , Nagisa Ohsako , Seigen Ri
IPC分类号： H01L39/24
CPC分类号： H01L39/2432 , Y10S505/73 , Y10S505/732
摘要： A method for fabricating a superconductive film composed of a RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x compound, or a (Bi.Sr.Ca.Cu.O) compound. In a first embodiment, oxides or carbonates of the component materials, namely Y.sub.2 O.sub.3, BaCO.sub.3, and CuO are mixed in atomic ratios of 1:2:3, according to the chemical formula of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x, and sintered to create a rhombic perovskite structure. The sintered mixture is powdered again, with added powdered amounts of Y.sub.2 O.sub.3 and powdered metallic Cu, and sintered. The sintered product is used as the source for an electron beam evaporator. In a second embodiment the (Bi.Sr.Ca.Cu.O) compound is formed into a sintered pellet which is composed of a mixture of one part of BiO, 3-15 parts of SrCO.sub.3, 4-30 parts of CaCO.sub.3, and 2-5 parts of CuO, in atomic ratios of Bi, Sr, Ca and Cu.

97. 发明申请

US20180256494A1 TOPICAL COMPOSITION FOR TREATING AN INFLAMMATORY SKIN DISEASE AND A METHOD FOR TREATING THE INFLAMMATORY SKIN DISEASE WITH THE SAME 审中-公开
公开(公告)号：US20180256494A1
公开(公告)日：2018-09-13
申请号：US15917496
申请日：2018-03-09
申请人： Beyong Deog PARK , Se Kyoo JEONG , Kyung Ho PARK , Kyong Oh SHIN , Hyun Jong KIM
发明人： Beyong Deog PARK , Se Kyoo JEONG , Kyung Ho PARK , Kyong Oh SHIN , Hyun Jong KIM
IPC分类号： A61K9/00 , A61P17/00 , A61P29/00 , A61K31/155 , A61K31/436 , A61K31/573 , A61K31/59
CPC分类号： A61K9/0014 , A61K31/155 , A61K31/436 , A61K31/573 , A61K31/59 , A61P17/00 , A61P29/00
摘要： A topical composition for treating an inflammatory skin disease in a subject includes a therapeutically effective amount of a biguanidine, and is in a dosage form for topical administration. A method for treating an inflammatory skin disease in a subject includes the following steps: identifying a subject in need thereof; providing a biguanidine; and administering the biguanidine in a therapeutically effective amount to a part of the subject to treat the inflammatory skin disease.

98. 发明授权

US09343030B2 Gate driving circuit and display apparatus including the same 有权
标题翻译：栅极驱动电路及包括其的显示装置
公开(公告)号：US09343030B2
公开(公告)日：2016-05-17
申请号：US12840642
申请日：2010-07-21
申请人： Hyuk-Jin Kim , Kyung-ho Park , Sang Yong No , YoungJe Cho , Kook Hyun Choi , Yongjo Kim , Sung Hoon Kim , Hyo-Seop Kim
发明人： Hyuk-Jin Kim , Kyung-ho Park , Sang Yong No , YoungJe Cho , Kook Hyun Choi , Yongjo Kim , Sung Hoon Kim , Hyo-Seop Kim
IPC分类号： G09G5/02 , H03K3/00 , G09G3/36 , G11C19/28
CPC分类号： G09G3/3677 , G09G2300/0417 , G09G2310/0286 , G11C19/28
摘要： A gate driving circuit includes N stages (where N is a natural number greater than or equal to 2). The N stages are cascaded, and each of the N stages has a gate line connected thereto. A first stage group includes k stages of the N stages (where k is a natural number less than N), and the first stage group outputs a first output signal in response to a start signal. A second stage group (including N−k stages) generates a second output signal in response to the first output signal and outputs the second output signal to a corresponding gate line. The first stage group includes a first buffer and a second buffer, each of which receives the start signal. A size of the first buffer is smaller than a size of the second buffer.
摘要翻译：门驱动电路包括N级（其中N是大于或等于2的自然数）。 N级级联，N级中的每一级具有与其连接的栅极线。第一级组包括N级的k级（其中k是小于N的自然数），并且第一级组响应于起始信号输出第一输出信号。第二级组（包括N-k级）响应于第一输出信号产生第二输出信号，并将第二输出信号输出到相应的栅极线。第一级组包括第一缓冲器和第二缓冲器，每个缓冲器和第二缓冲器都接收起始信号。第一缓冲器的尺寸小于第二缓冲器的尺寸。

99. 发明授权

US09129577B2 Layout of a group of gate driving stages wherein two stages are adjacent in the column direction and a third stage is adjacent to both said stages in the row direction 有权
标题翻译：一组栅极驱动级的布置，其中两个级在列方向上相邻，并且第三级与行方向上的两个级相邻
公开(公告)号：US09129577B2
公开(公告)日：2015-09-08
申请号：US13402262
申请日：2012-02-22
申请人： Kyung-ho Park , Ji-Sun Kim
发明人： Kyung-ho Park , Ji-Sun Kim
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2310/0281
摘要： A display apparatus includes a display panel including a plurality of pixel columns to display an image, wherein each of the pixel columns includes a plurality of pixels arranged in a first direction and sequentially turned-on in the first direction; a gate driver disposed on the display panel and including a plurality of stages connected to the pixels to sequentially apply a gate signal to the pixels, where at least two stages of the stages are disposed adjacent to each other in a second direction different from the first direction; and a data driver which applies a data voltage to the pixels.
摘要翻译：显示装置包括：显示面板，包括多个像素列以显示图像，其中每个像素列包括沿第一方向布置并沿第一方向顺序接通的多个像素; 栅极驱动器，其布置在所述显示面板上并且包括连接到所述像素的多个级，以顺序地向所述像素施加栅极信号，其中所述级的至少两级在彼此相邻的方向上设置在与所述第一方向; 以及向像素施加数据电压的数据驱动器。

100. 发明授权

US09023494B2 Rechargeable battery pack 有权
标题翻译：充电电池组
公开(公告)号：US09023494B2
公开(公告)日：2015-05-05
申请号：US13609831
申请日：2012-09-11
申请人： Kyung-Ho Park , Seok Koh
发明人： Kyung-Ho Park , Seok Koh
IPC分类号： H01M2/00 , H01M2/02 , H01M2/34 , H01M10/42
CPC分类号： H01M2/0275 , H01M2/34 , H01M10/425
摘要： A rechargeable battery pack includes a plurality of unit cells adjacent to each other along a first direction in a pouch, the pouch having a terrace portion at one side surface, and a vertical portion on and perpendicular to the terrace portion, a protection circuit module (PCM) electrically connected to the unit cells, the PCM including a concave groove, and the vertical portion of the pouch fitting into the concave groove, and an adhesion member connecting the PCM and the terrace portion of the pouch, the adhesion member including a separation portion configured to concavely separate and fit the vertical portion of the pouch.
摘要翻译：可再充电电池组包括多个沿着小袋第一方向彼此相邻的单元电池，该小袋在一个侧表面具有一个平台部分，在该平台部分上垂直于该垂直部分，一个保护电路模块（ PCM），其连接到所述单元电池，所述PCM包括凹槽，并且所述袋的垂直部分配合到所述凹槽中，以及粘合构件，其连接所述PCM和所述小袋的所述露台部分，所述粘合构件包括分离所述部分被构造成凹入地分离并装配所述袋的垂直部分。

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