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    • 98. 发明公开
    • Composite iridium barrier structure with oxidized refractory metal companion barrier and method for its fabrication
    • 复合铱垒结构与氧化的高熔点金属和制造工艺的伴随的屏障
    • EP1054440A2
    • 2000-11-22
    • EP00304291.8
    • 2000-05-22
    • SHARP KABUSHIKI KAISHA
    • Zhang, FengyanHsu, Sheng Teng
    • H01L21/02H01L21/285
    • H01L21/28291H01L21/28568H01L28/75H01L29/513H01L29/516H01L29/78391
    • An Ir-M-O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film effectively prevents oxygen diffusion, and is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from oxidizing the same variety of M transition metals, the resulting conductive barrier also suppresses the diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. The Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir-M-O conductive electrode/barrier structures are useful in nonvolatile MFMIS (metal/ferro/metal/insulator/silicon) memory devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays and piezoelectric transducers. A method for forming an Ir-M-O composite film barrier layer with an oxidized refractory metal barrier layer is also provided.
    • IR-M-O复合膜-已经提供确实处于铁电电容器,其中,M包括各种难熔金属中的电极的形成是有用的。 红外组合电影有效地防止氧扩散,并且是在氧环境中的高温退火抗性。 当与在从氧化剂的相同品种M转换金属制成下面的阻挡层使用,所得到的导电阻挡所以禁止的Ir成任何底层Si衬底的扩散。 其结果是,IR硅化物的产品不形成,其降低了电极的界面特性。 红外组合电影保持导通,不剥离或形成小丘,在高温退火过程中,即使在氧气。 的IR-M-O导电电极/势垒结构是在非易失性MFMIS(金属/铁磁/金属/绝缘体/硅)存储器设备,DRAM中,电容器,热电型红外线传感器,光学显示器和压电换能器是有用的。 一种在铱-M-O复合膜阻隔层形成与提供给氧化耐火金属阻挡层的方法是如此。