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91. 发明授权

US09190592B2 Thin film thermoelectric devices having favorable crystal tilt 有权
标题翻译：具有良好晶体倾斜的薄膜热电元件
公开(公告)号：US09190592B2
公开(公告)日：2015-11-17
申请号：US13833651
申请日：2013-03-15
申请人： Nextreme Thermal Solutions, Inc.
发明人： Robert P. Vaudo , Philip A. Deane , Thomas Peter Schneider , Christopher D. Holzworth , Joseph Robert Williamson
IPC分类号： H01L35/34 , H01L35/04 , H01L35/32
CPC分类号： H01L35/04 , H01L35/32 , H01L35/34
摘要： A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.
摘要翻译：一种制造热电装置的方法包括提供具有从其表面突出的多个倾斜生长表面的基板。相应的热电材料层生长在倾斜的生长表面上，并且各个热电材料层聚结以共同限定连续的热电膜。与基板的表面相对的热电膜的表面可以是基本上平面的，并且热电膜的结晶取向可以相对于沿其厚度的方向以大约45度或更小的角度倾斜。还讨论了相关设备和制造方法。

92. 发明授权

US09184174B2 Semiconductor devices and methods of fabricating semiconductor devices 有权
标题翻译：半导体器件和制造半导体器件的方法
公开(公告)号：US09184174B2
公开(公告)日：2015-11-10
申请号：US14155649
申请日：2014-01-15
申请人： Jang-Gn Yun , Hongsoo Kim , Aaron Park , Hoosung Cho
发明人： Jang-Gn Yun , Hongsoo Kim , Aaron Park , Hoosung Cho
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L27/115
CPC分类号： H01L27/1157 , H01L27/11575 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices are provided. A semiconductor device may include a substrate and a plurality of lines on the substrate. The semiconductor device may include a dielectric layer on the substrate and adjacent the plurality of lines. The semiconductor device may include a connection element in the dielectric layer. In some embodiments, the semiconductor device may include a plurality of contacts on the connection element, and a conductive interconnection on one of the plurality of contacts that are on the connection element and on a contact that is spaced apart from the connection element.
摘要翻译：提供半导体器件。半导体器件可以包括衬底和衬底上的多条线。半导体器件可以包括在衬底上并与多条线相邻的电介质层。该半导体器件可以包括介电层中的连接元件。在一些实施例中，半导体器件可以包括连接元件上的多个触点，以及在连接元件上的多个触点中的一个触点上以及与连接元件间隔开的触点上的导电互连。

93. 发明授权

US09183913B2 Methods of operating a magnetic memory device 有权
标题翻译：操作磁存储器件的方法
公开(公告)号：US09183913B2
公开(公告)日：2015-11-10
申请号：US14295452
申请日：2014-06-04
申请人： Daeshik Kim
发明人： Daeshik Kim
IPC分类号： G11C11/16 , G11C13/00 , G11C11/56
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C13/0069 , G11C2213/79
摘要： Provided is a data writing method of a magnetic memory device. The method may include flowing first and second currents near left and right sides, respectively, of a selected memory cell to apply an ambient magnetic field to the selected memory cell. Here, directions of the first and second currents may be anti-parallel to each other.
摘要翻译：提供了一种磁存储器件的数据写入方法。该方法可以包括分别在所选择的存储器单元的左侧和右侧流动第一和第二电流，以将环境磁场施加到所选存储单元。这里，第一和第二电流的方向可以是反平行的。

94. 外观设计

USD740642S1 Door and window handle 有权
标题翻译：门窗手柄
公开(公告)号：USD740642S1
公开(公告)日：2015-10-13
申请号：US29502430
申请日：2014-09-16
申请人： ASSA OEM AB
设计人： Fredrik Carlsson

95. 发明授权

US09159727B2 Nonvolatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US09159727B2
公开(公告)日：2015-10-13
申请号：US13537588
申请日：2012-06-29
申请人： Chan-Jin Park
发明人： Chan-Jin Park
IPC分类号： H01L21/02 , H01L27/10 , H01L27/24 , H01L45/00
CPC分类号： H01L27/101 , H01L27/2454 , H01L27/249 , H01L45/04 , H01L45/1226 , H01L45/146
摘要： Provided are a nonvolatile memory device and a method for fabricating the same. The method includes sequentially stacking on a semiconductor substrate a first interlayer dielectric film, a first sacrificial layer, a second interlayer dielectric film, and a second sacrificial layer, forming a resistance variable layer and a first electrode penetrating the first and second interlayer dielectric films and the first and second sacrificial layers, forming an upper trench by removing a top portion of the first electrode, filling the upper trench with a channel layer, exposing a portion of a side surface of the resistance variable layer by removing the second sacrificial layer, forming an insulation layer within the channel layer, and forming a second electrode on the exposed resistance variable layer.
摘要翻译：提供一种非易失性存储器件及其制造方法。该方法包括在半导体衬底上依次堆叠第一层间电介质膜，第一牺牲层，第二层间电介质膜和第二牺牲层，形成电阻变化层和穿透第一和第二层间电介质膜的第一电极，以及所述第一牺牲层和所述第二牺牲层通过去除所述第一电极的顶部而形成上沟槽，用沟道层填充所述上沟槽，通过去除所述第二牺牲层暴露所述电阻可变层的侧表面的一部分，形成沟道层内的绝缘层，并且在暴露的电阻变化层上形成第二电极。

96. 发明授权

US09157290B2 Arrangement, device and method for resolving hydrate plugs 有权
标题翻译：水合物塞头的排列，装置和方法
公开(公告)号：US09157290B2
公开(公告)日：2015-10-13
申请号：US13699132
申请日：2011-05-20
申请人： Geir Habesland , William Steffensen
发明人： Geir Habesland , William Steffensen
IPC分类号： E21B36/04 , E21B37/00 , E21B23/14 , E21B36/00
CPC分类号： E21B23/14 , E21B36/00 , E21B36/04 , E21B37/00
摘要： An arrangement for resolving a hydrate plug (1) in a pipeline (2), such as tubing, drill pipe, casing etc., is described, said arrangement comprising a heating device (4) run on wire line. The heating device (4) is elongated and spear shaped and is mounted on a stroking device (3), the stroking device (3) being adapted to provide a pushing force of sufficient strength to force the heating device into the hydrate plug (1). The heating device then has a large surface towards the hydrate plug. When heat is applied to the heating device, the hydrate plug will melt. A hydrate inhibitor may be added to the liquid near the hydrate plug.
摘要翻译：描述了用于分解管道（2）中的水合物塞（1）的装置，例如管道，钻杆，套管等，所述装置包括在线路上运行的加热装置（4）。加热装置（4）是细长的和矛形的，并且安装在划动装置（3）上，该划动装置（3）适于提供足够强度的推动力，以迫使加热装置进入水合物塞（1）。然后，加热装置具有朝向水合物塞的大表面。当对加热装置施加热量时，水合物塞将熔化。可以在水合物塞附近的液体中加入水合物抑制剂。

97. 发明授权

US09143999B2 Method for handling handover in a communication network 有权
标题翻译：用于处理通信网络中的切换的方法
公开(公告)号：US09143999B2
公开(公告)日：2015-09-22
申请号：US13700502
申请日：2010-06-23
申请人： Tomas Nylander , Jari Vikberg
发明人： Tomas Nylander , Jari Vikberg
IPC分类号： H04W36/24 , H04W36/00 , H04W48/20 , H04W36/04 , H04W36/32
CPC分类号： H04W36/24 , H04W36/0061 , H04W36/04 , H04W36/32 , H04W48/20
摘要： The present solution relates to a method in a first network node (301) for handling handover of a user equipment (105) from a source cell (303) to a target cell (309) in a communication network (300). The first network node (301) selects (504) the target cell (309) from neighbor cells (309) based on information of cell size, which target cell (309) will be used for handover the user equipment (105) to.
摘要翻译：本解决方案涉及在通信网络（300）中处理用户设备（105）从源小区（303）到目标小区（309）的切换的第一网络节点（301）中的方法。第一网络节点（301）基于小区尺寸的信息从相邻小区（309）中选择（504）目标小区（309），哪个目标小区（309）将用于切换用户设备（105）。

98. 发明授权

US09142489B2 Semiconductor devices including a non-planar conductive pattern, and methods of forming semiconductor devices including a non-planar conductive pattern 有权
标题翻译：包括非平面导电图案的半导体器件，以及形成包括非平面导电图案的半导体器件的方法
公开(公告)号：US09142489B2
公开(公告)日：2015-09-22
申请号：US13962341
申请日：2013-08-08
申请人： Samsung Electronics Co., Ltd.
发明人： Jongwon Hong , Hei Seung Kim , Kyoung Hee Nam , Jongmyeong Lee , Gilheyun Choi
IPC分类号： H01L23/48 , H01L23/00
CPC分类号： H01L23/481 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0345 , H01L2224/0346 , H01L2224/036 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05017 , H01L2224/05093 , H01L2224/05548 , H01L2224/05557 , H01L2224/05558 , H01L2224/11334 , H01L2224/1146 , H01L2224/13022 , H01L2224/131 , H01L2224/13144 , H01L2224/45144 , H01L2224/48091 , H01L2224/48228 , H01L2224/48453 , H01L2224/48464 , H01L2224/4848 , H01L2224/73265 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2224/48465 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： Semiconductor devices are provided. The semiconductor devices may include a non-planar conductive pattern. The non-planar conductive pattern may be on an insulating layer and may contact a connection terminal at a plurality of different heights. Related methods of forming semiconductor devices are also provided.
摘要翻译：提供半导体器件。半导体器件可以包括非平面导电图案。非平面导电图案可以在绝缘层上并且可以在多个不同高度处接触连接端子。还提供了形成半导体器件的相关方法。

99. 发明授权

US09142468B2 Structures and methods for testing printable integrated circuits 有权
标题翻译：用于测试可印刷集成电路的结构和方法
公开(公告)号：US09142468B2
公开(公告)日：2015-09-22
申请号：US13818901
申请日：2011-08-24
申请人： Christopher Bower , Etienne Menard , Matthew Meitl
发明人： Christopher Bower , Etienne Menard , Matthew Meitl
IPC分类号： H01L23/58 , H01L21/66 , H01L21/683 , G01R31/26 , H01L21/308
CPC分类号： H01L33/62 , G01R31/26 , G01R31/2644 , H01L21/308 , H01L21/6835 , H01L22/14 , H01L22/30 , H01L22/32 , H01L25/0753 , H01L33/16 , H01L33/30 , H01L33/34 , H01L33/48 , H01L2221/6835 , H01L2221/68381 , H01L2924/0002 , H01L2924/00
摘要： A substrate includes an anchor area (30) physically secured to a surface of the substrate (10) and at least one printable electronic component (20). The at least one printable electronic component includes an active layer (14) having one or more active elements thereon, and is suspended over the surface of the substrate by electrically conductive breakable tethers (40). The electrically conductive breakable tethers include an insulating layer and a conductive layer thereon that physically secure and electrically connect the at least one printable electronic component to the anchor area, and are configured to be preferentially fractured responsive to pressure applied thereto. Related methods of fabrication and testing are also discussed.
摘要翻译：衬底包括物理地固定到衬底（10）的表面上的锚定区域（30）和至少一个可印刷的电子部件（20）。所述至少一个可印刷电子部件包括其上具有一个或多个有源元件的有源层（14），并且通过导电可破坏的系绳（40）悬挂在基板的表面上。导电可破裂系绳包括绝缘层和导电层，其物理地固定和电连接至少一个可印刷的电子部件到锚定区域，并且被配置为响应于施加到其上的压力而优先断裂。还讨论了相关的制造和测试方法。

100. 发明授权

US09137200B2 Ice based NAT traversal 有权
标题翻译：基于Ice的NAT穿越
公开(公告)号：US09137200B2
公开(公告)日：2015-09-15
申请号：US13388236
申请日：2012-01-17
申请人： Staffan Blau , Hubert Przybysz
发明人： Staffan Blau , Hubert Przybysz
IPC分类号： G06F15/16 , H04L29/12 , H04L29/06
CPC分类号： H04L61/2528 , H04L61/2564 , H04L61/2575 , H04L61/2589 , H04L65/1006 , H04L65/1016 , H04L65/1069
摘要： An originating P-CSCF node receives a SIP INVITE request from first user equipment (UE) that originates a call to a second UE. If a relay candidate address for the first UE is not present in the SIP INVITE request, the SIP INVITE request is modified to include a first address provided by an originating IMS-AGW node as a relay candidate for the first UE and forwarded to the second UE. The originating P-CSDF node receives a SIP INVITE response message from the second UE in response to the SIP INVITE request. If a relay candidate address for the second UE is not present in the SIP INVITE response, the SIP invite response is modified to include a second address provided by an originating IMS-AGW node as a relay candidate for the second UE and forwarded t the first UE. The address information is used by both UEs in ICE operations.
摘要翻译：始发P-CSCF节点从发起对第二UE的呼叫的第一用户设备（UE）接收SIP INVITE请求。如果SIP INVITE请求中不存在用于第一UE的中继候选地址，则将SIP INVITE请求修改为包括由始发IMS-AGW节点提供的第一地址作为第一UE的中继候选，并转发给第二UE UE。发起的P-CSDF节点响应于SIP INVITE请求从第二UE接收SIP INVITE响应消息。如果第二UE的中继候选地址不存在于SIP INVITE响应中，则SIP邀请响应被修改为包括由始发IMS-AGW节点提供的第二地址作为第二UE的中继候选，并且转发到第一UE UE。两个UE在ICE操作中使用地址信息。

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