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91. 发明专利

DE102009008906A1 未知
公开(公告)号：DE102009008906A1
公开(公告)日：2009-09-17
申请号：DE102009008906
申请日：2009-02-13
申请人： ULVAC INC
发明人： TANAKA TOMONARI , YAHAGI MITSURU , SHIBAYAMA KOUJI , NAKAMURA TAKASHI , FUKAURA YUUJI
IPC分类号： C08J5/00 , B29C71/00 , F04C25/00
摘要： A method is provided which manufactures a vane used for an oil-sealed rotary vacuum pump and having at least a part formed of a resin material, the method including: an oil impregnating process of immersing the vane into oil used for the oil-sealed rotary vacuum pump under a depressurized condition, the oil impregnating process being carried out before a finishing process of finishing the vane into a final shape.

92. 发明专利

DE112007002168T5 未知
公开(公告)号：DE112007002168T5
公开(公告)日：2009-09-10
申请号：DE112007002168
申请日：2007-09-10
申请人： ULVAC INC
发明人： NAGATA HIROSHI , NAKAMURA KYUZO , KATOU TAKEO , NAKATSUKA ATSUSHI , MUKAE ICHIROU , ITOU MASAMI , YOSHIIZUMI RYOU , SHINGAKI YOSHINORI
IPC分类号： H01F41/02 , C23C14/00 , H01F1/053 , H01F1/08
摘要： A permanent magnet is provided which has formed a Dy, Tb film on a surface of an iron-boron-rare earth sintered magnet of a predetermined shape, with diffusion thereof into grain boundary phases, having a higher coercive force. The method of manufacturing a permanent magnet includes a film-forming step of evaporating metal evaporating material containing at least one of Dy and Tb and adhering evaporated metal atoms to a surface of the iron-boron-rare earth sintered magnet, and a diffusing step of performing heat treatment to diffuse metal atoms adhered to the surface into grain boundary phases of the sintered magnet. The metal evaporating material contains at least one of Nd and Pr.

93. 发明专利

AT439583T 未知
公开(公告)号：AT439583T
公开(公告)日：2009-08-15
申请号：AT05012537
申请日：2005-06-10
申请人： ULVAC INC
发明人： ITOH ATSUSHI , ICHIHASHI MOTOKO
IPC分类号： G01N29/02 , B01F11/02 , B01F13/00 , C12M1/34 , C12Q1/00 , G01N29/42 , G01N29/44
摘要： A measuring method using a surface acoustic wave device, with which even in a case where a target substance having a different viscosity is added to a buffer liquid on the surface acoustic wave device it is possible to measure a mass load accurately without suffering an effect of this viscous load, and it is also possible to shorten the time taken for the temperature of the buffer liquid to stabilize and thereby shorten the time taken for the measurement. The measuring method provided is a method for exciting a surface acoustic wave on a substrate and measuring a property of a target substance placed on a detecting part on the substrate on the basis of a change in a characteristic of the surface acoustic wave, with the characterizing feature that a viscous load of the target substance is evaluated on the basis of fluctuations of at least two different frequencies among frequencies of the surface acoustic wave excited on the substrate, and a mass load of the target substance is measured by being separated from this viscous load.

94. 发明专利

DE112007002010T5 未知
公开(公告)号：DE112007002010T5
公开(公告)日：2009-07-02
申请号：DE112007002010
申请日：2007-08-22
申请人： ULVAC INC
发明人： NAGATA HIROSHI , SHINGAKI YOSHINORI
IPC分类号： H01F41/02 , H01F1/053 , H01F1/08
摘要： One object of the present invention is to provide a method for manufacturing a permanent magnet which can effectively improving the magnetizing properties and coercive force with efficiently diffusing Dy into grain boundary phases without deteriorating a surface of sintered magnet of Nd—Fe—B family and does not require any subsequent working process. Sintered magnet S of Nd—Fe—B family and Dy are arranged in a processing chamber 20 apart from each other. Then Dy is evaporated by heating the processing chamber 20 under a reduced pressure condition to evaporate Dy with elevating the temperature of sintered magnet S to a predetermined temperature and to supply and deposit evaporated Dy atoms onto the surface of sintered magnet S. During which the supplying amount of Dy atoms onto the sintered magnet S is controlled so as to diffuse and homogeneously penetrate them into the grain boundary phases of sintered magnet before Dy layer is formed on the surface of sintered magnet.

95. 发明专利

DE60136515D1 未知
公开(公告)号：DE60136515D1
公开(公告)日：2008-12-24
申请号：DE60136515
申请日：2001-09-06
申请人： ULVAC INC
发明人： MORIMOTO NAOKI , KONDO TOMOYASU , NAGASHIMA HIDETO
IPC分类号： H01J37/34 , H05H1/46 , C23C14/34 , H01L21/203 , H01L21/285
摘要： In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.

96. 发明专利

AU2008252203A1 Dry etching method 未知
公开(公告)号：AU2008252203A1
公开(公告)日：2008-11-27
申请号：AU2008252203
申请日：2008-05-08
申请人： ULVAC INC
发明人： SATOU MASAYUKI , MORIKAWA YASUHIRO , HAYASHI TOSHIO , SUU KOUKOU
IPC分类号： H01L21/306 , H01L21/3065 , H01L41/18 , H01L41/22 , H01L41/332 , H03H3/02
摘要： A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided. The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.

97. 发明专利

DE60135956D1 未知
公开(公告)号：DE60135956D1
公开(公告)日：2008-11-13
申请号：DE60135956
申请日：2001-07-25
申请人： ULVAC INC
发明人： TANI NORIAKI , SAITO KAZUHIKO , SUU KOUKOU
IPC分类号： C23C14/34 , H01J37/34 , C23C14/08 , H01L21/203 , H01L21/31
摘要： In order to provide technology where film deposition speed and Sr/Ti composition ratio is constant even when forming dielectric films consecutively on a plurality of substrates using sputtering techniques, a sputtering apparatus of the present invention is provided with an opposing electrode located about the periphery of a mounting table at an inner bottom surface of a vacuum chamber. Further, a multiplicity of holes are formed at the surface of the opposing electrode so that the surface area of the opposing electrode is large. Sputtered dielectric material becomes affixed to the surface of the opposing electrode so that a dielectric film is formed at this surface. The charge density of charge distributed at the surface of the opposing electrode is therefore small compared with the related art even when positive charge is distributed. The potential of the opposing electrode surface can therefore be kept substantially at earth potential. Discharges within the vacuum chamber are therefore stable because the potential of the surface of the opposing electrode is kept substantially at earth potential. It is therefore difficult for the fluctuations in film thickness distribution and film deposition speed and instabilities in the discharges that occur in the related art to occur.

98. 发明专利

DE112006003093T5 未知
公开(公告)号：DE112006003093T5
公开(公告)日：2008-11-06
申请号：DE112006003093
申请日：2006-11-06
申请人： ULVAC INC
发明人： TAKAHASHI YOSHIKAZU
IPC分类号： H01L51/50

99. 发明专利

HK1110360A1 SPUTTERING TARGET AS WELL AS A JOINED TYPE SPUTTERING TARGET ASSEMBLY AND A METHOD OF MAKING SUCH A JOINED TYPE SPUTTERING TARGET ASSEMBLY 未知
公开(公告)号：HK1110360A1
公开(公告)日：2008-07-11
申请号：HK08100733
申请日：2008-01-21
申请人： ULVAC INC
发明人： NITTA JUNICHI , ITO TAKAHARU , MATSUMOTO HIROSHI , ITO MANABU
IPC分类号： C23C20060101
摘要： [Object] It is to provide a sputtering target which has an excellent adhesion to films made of Au, Cu or an alloy containing at least one of Au and Cu and also an excellent corrosion resistance and which can be used to form an Mo-Ti alloy film over a large-sized substrate. [SOLUTION] The present invention provides a sputtering target suitable for use in formation of an Mo-Ti alloy film on a substrate, characterized by that the sputtering target comprises Ti of higher than 50 atomic percentages but not exceeding 60 atomic percentages and the balance of Mo and inevitable impurities and that the relative density of the sputtering target is equal to or more than 98%. The present invention also provides a joined type sputtering target assembly formed by diffusion joining two of more of such sputtering targets, the length of the joined type sputtering target assembly being equal to or larger than 1,000 mm at least one side. The present invention further provides a method of making such a joined type sputtering target assembly.

100. 发明专利

DE69837572D1 未知
公开(公告)号：DE69837572D1
公开(公告)日：2007-05-24
申请号：DE69837572
申请日：1998-05-28
申请人： ULVAC INC
发明人： NAGASHIMA NAOKI ULVAC , TAKAHASHI NATSUKI , NEGISHI TOSHIO
IPC分类号： C23C14/12 , C23C14/24

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